Assessing the performance limits of ultra-thin double-gate MOSFETs: silicon vs. germanium

The scalability of ultra-thin double-gate transistors in accordance with ITRS 2003 projection is examined with Si and Ge channel materials and with realistic device structure and parasitics. Continuum device simulations using Dessis are employed with electrostatic and transport models adjusted for Si and Ge. The density-gradient model is used to consider the confinement of the electrons in the channel with parameters adjusted using a Schrodinger-Poisson solver modified for different orientations of Si and Ge.