64 GHz and 100 GHz VCOs in 90 nm CMOS using optimum pumping method

A method to optimally pump energy from the transistors to the passive network is presented for the design of integrated 64 GHz and 100 GHz VCOs in 90 nm CMOS. The VCOs use an on-die distributed network, draw /spl sim/25 mA from a 1 V supply and produce oscillations with 0.4 Vp-p amplitudes. Phase noise is <-110 dBc/Hz at 10 MHz offset, and VCO gain is 2 GHz/V.