Effect of boron doping on the properties of chemically deposited CdS films

Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 /spl Omega/-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when boron doped CdS film as the window layer was used.