High resolution 2D Scanning Spreading Resistance Microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

This work reports a comparative study of the electrical and analytical characterisation of nanoscaled ultrathin SOI transistors. The devices are fabricated on 25nm SOI with gate lengths down to 25nm. We use high resolution scanning spreading resistance microscopy (SSRM) to provide reliable information about the carrier profiling and effective gate lengths of the devices. The results of these measurements are compared with electrical results and with high resolution TEM.