Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics

It is shown that the inversion charge in MOSFETs can be directly measured by a variant of the charge pumping (C-P) technique in long channel devices (inversion-charge pumping (ICP)). This new technique is used to demonstrate that charge trapping and net-fixed charge in n-channel MOSFETs with SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics are not the primary cause for the strong mobility degradation.