Suppression of boron penetration by hot wire CVD polysilicon

In the current and future deep sub-micron technologies, boron penetration through the gate dielectric is a severe reliability concern for the dual gate CMOS technology. In this paper we report results of our attempts to exploit the potential of Hot Wire CVD (HWCVD) for depositing poly-Si gate for CMOS technology. The effect of grain size of poly-Si gate on boron penetration is studied by varying the poly-Si grain size through variation in the HWCVD parameters.