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# IEEE Transactions on Nanotechnology

Includes the top 50 most frequently accessed documents for this publication according to the usage statistics for the month of

• ### Negative Capacitance for Boosting Tunnel FET performance

Publication Year: 2017, Page(s):253 - 258
| | PDF (1243 KB) | HTML

We have proposed and investigated a super steep subthreshold slope transistor by introducing negative capacitance of a ferroelectric HfO2 gate insulator to a vertical tunnel FET for energy efficient computing. The channel structure and gate insulator are systematically designed to maximize the Ion/Ioff ratio. The simulation study reveals that the electric field at ... View full abstract»

• ### Crossbar-Based Memristive Logic-in-Memory Architecture

Publication Year: 2017, Page(s):491 - 501
| | PDF (1153 KB) | HTML

The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the underlying ReRAM architecture and its organization have received less attention, as the focus has mainly been on device-specific properties for functionally complete logic gates through ... View full abstract»

• ### High-Performance Ternary Adder Using CNTFET

Publication Year: 2017, Page(s):368 - 374
| | PDF (1050 KB) | HTML

Ternary logic is a promising alternative to the conventional binary logic in VLSI design as it provides the advantages of reduced interconnects, higher operating speeds, and smaller chip area. This paper presents a pair of circuits for implementing a ternary half adder using carbon nanotube field-effect transistors. The proposed designs combine both futuristic ternary and conventional binary logic... View full abstract»

• ### Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO2 )/28 nm FDSOI CMOS Technology

Publication Year: 2017, Page(s):677 - 686
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Emerging nonvolatile memories (NVM) based on resistive switching mechanism such as RRAM are under intense R&D investigation by both academics and industries. They provide high write/read speed, low power, and good endurance (e.g., >1012) beyond mainstream NVMs, enabling them to be a good candidate for Flash replacement in microcontroller unit. This replacement could significantly dec... View full abstract»

• ### Stochasticity Modeling in Memristors

Publication Year: 2016, Page(s):15 - 28
Cited by:  Papers (3)
| | PDF (2704 KB) | HTML

Diverse models have been proposed over the past years to explain the exhibiting behavior of memristors, the fourth fundamental circuit element. The models varied in complexity ranging from a description of physical mechanisms to a more generalized mathematical modeling. Nonetheless, stochasticity, a widespread observed phenomenon, has been immensely overlooked from the modeling perspective. This i... View full abstract»

• ### Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

Publication Year: 2017, Page(s):387 - 395
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Spin transfer torque magnetic random access memory (STT-MRAM) has been widely regarded as a potential nonvolatile memory candidate in the next-generation computer architectures. Nevertheless, the write energy consumption and delay are two significant concerns for STT-MRAM, blocking its applications for working memories. Recently, magnetic tunnel junction (MTJ) based on voltage-controlled magnetic ... View full abstract»

• ### A Sub-1 V, 120 nW, PVT-Variation Tolerant, Tunable, and Scalable Voltage Reference With 60-dB PSNA

Publication Year: 2017, Page(s):406 - 410
| | PDF (788 KB) | HTML

This paper presents a novel low-power process, voltage and temperature (PVT)-variation tolerant voltage reference generator that can be easily redesigned across various CMOS technologies. The proposed circuit architecture can be used in standalone analog integrated circuits that may not require nano-scale technologies as well as system-on-a-chip applications that need analog circuits in a much low... View full abstract»

• ### Continuous Fabrication of Highly Conductive and Transparent Ag Mesh Electrodes for Flexible Electronics

Publication Year: 2017, Page(s):687 - 694
| | PDF (558 KB) | HTML

Flexible transparent conductive electrodes are essential components for flexible electronics and more functions are combined in such components for miniaturization and design flexibility. The embedded metal mesh, due to the merits of good transparency, conductivity, and flexibility, is regarded as a promising candidate for transparent conductive electrodes. This study reports a continuous fabricat... View full abstract»

• ### Reconfigurable Terahertz Leaky-Wave Antenna Using Graphene-Based High-Impedance Surface

Publication Year: 2015, Page(s):62 - 69
Cited by:  Papers (17)
| | PDF (909 KB) | HTML

The concept of graphene-based two-dimensional leaky-wave antenna (LWA), allowing both frequency tuning and beam steering in the terahertz band, is proposed in this paper. In its design, a graphene sheet is used as a tuning part of the high-impedance surface (HIS) that acts as the ground plane of such 2-D LWA. It is shown that, by adjusting the graphene conductivity, the reflection phase of the HIS... View full abstract»

• ### Design of a Beam Reconfigurable THz Antenna With Graphene-Based Switchable High-Impedance Surface

Publication Year: 2012, Page(s):836 - 842
Cited by:  Papers (33)
| | PDF (889 KB) | HTML

In this paper, a new beam reconfigurable antenna is proposed for THz application, which is based on a switchable high-impedance surface (HIS) using a single-layer graphene. The effects of impurity density and gate voltage on the conductivity of graphene are utilized, and the switchable reflection characteristic of the graphene-based HIS is observed. Then the THz antenna is designed over this switc... View full abstract»

• ### A Drift-Tolerant Read/Write Scheme for Multi-Level Memristor Memory

Publication Year: 2017, Page(s): 1
| | PDF (5283 KB)

Memristor based crossbar memories are prime candidates to succeed the Flash as the mainstream nonvolatile memory due to their density, scalability, write endurance and capability of storing multi-bit per cell. In this paper, we present a memristor crossbar memory architecture that utilizes a reduced constraint read-monitored-write scheme. The proposed scheme supports multi-bit storage per cell and... View full abstract»

• ### CNTFET-Based Design of Ternary Logic Gates and Arithmetic Circuits

Publication Year: 2011, Page(s):217 - 225
Cited by:  Papers (87)  |  Patents (1)
| | PDF (773 KB) | HTML

This paper presents a novel design of ternary logic gates using carbon nanotube (CNT) FETs (CNTFETs). Ternary logic is a promising alternative to the conventional binary logic design technique, since it is possible to accomplish simplicity and energy efficiency in modern digital design due to the reduced circuit overhead such as interconnects and chip area. A resistive-load CNTFET-based ternary lo... View full abstract»

• ### Performance and Variability Analysis of SiNW 6T-SRAM Cell using Compact Model with Parasitics

Publication Year: 2017, Page(s): 1
| | PDF (1484 KB)

In this paper, we analyze stability metrics (e.g. read, write noise margins and access time), geometrical variability and layout area optimization of silicon nanowire field effect transistor (SiNW FET) based 6T SRAM with multiwire sizing technique. The SRAM cell analyzed in this paper is based on the TCAD and experimentally verified SiNW FET Verilog-A compact model with parasitics. The different N... View full abstract»

• ### Design and Investigation on Bio-Inverter and Bio-Ring-oscillator for Dielectrically Modulated Biosensing Applications

Publication Year: 2017, Page(s): 1
| | PDF (775 KB)

In this work, an inverter based bio-molecule detection strategy has been introduced for dielectrically modulated biosensing applications that shows a clear output logic-state transition after conjugation. Subsequently, a bio-ring-oscillator has been realized based on such bio-inverters, where bio-molecules can be detected from the oscillation frequency amplification with conjugation. To optimize t... View full abstract»

• ### Compact Modeling of Gate Capacitance in III–V Channel Quadruple-Gate FETs

Publication Year: 2017, Page(s):703 - 710
| | PDF (986 KB) | HTML

In this paper, we present a compact model for charge density and gate capacitance for low effective mass channel material based quadruple-gate FETs (QGFETs). The proposed model accounts for the effect of quantum capacitance and conduction band non-parabolicity, which are important in FETs comprised of the low effective mass channel material. In modeling of QGFET, we propose and use a new form of F... View full abstract»

• ### Tunneling Effects in a Charge-Plasma Dopingless Transistor

Publication Year: 2017, Page(s):315 - 320
| | PDF (1226 KB) | HTML

The recently proposed device concept, the so-called charge-plasma (C-P) dopingless transistor (DLT), is revisited. The novel device, which utilizes the workfunction difference between the source/drain (S/D) metal and the substrate enclosing the S/D junction, does not demand external S/D chemical doping via ion implant. It shows excellent immunity against short-channel effects due to an extremely t... View full abstract»

• ### Applications of Micro/Nano Automation Technology in Detecting Cancer Cells for Personalized Medicine

Publication Year: 2017, Page(s):217 - 229
| | PDF (691 KB) | HTML

The coming era of personalized cancer treatment is presenting automation with unprecedented opportunities. Currently, the drug susceptibility test of clinical cancer patients is mainly dependent on manual labor with a low level of automation. Automating the process of primary cancer cell detection will potentially have tremendous economic benefits and social significance. Automated cancer cell det... View full abstract»

• ### Robustness Analysis of a Memristive Crossbar PUF Against Modeling Attacks

Publication Year: 2017, Page(s):396 - 405
| | PDF (777 KB) | HTML

In the greater context of computer security, hardware security issues such as integrated circuit counterfeiting, cloning, reverse engineering and piracy have emerged as critical issues due in part to an increasingly globalized supply chain. To help combat hardware security vulnerabilities, a wide range of security primitives have emerged in recent years. A popular example is physical unclonable fu... View full abstract»

• ### Real-Time Controllable and Multifunctional Metasurfaces Utilizing Indium Tin Oxide Materials: A Phased Array Perspective

Publication Year: 2017, Page(s):296 - 306
| | PDF (923 KB) | HTML

In this paper, two electrically tunable dual-band reflectarray antennas are designed by the integration of a thin layer of indium tin oxide (ITO) into plasmonic multi-sized and multilayer unit cells. The presented geometries include two gold nanoribbons located next to each other with different widths and backed by a stack of alumina-ITO-metallic ground plane and two pairs of vertically stacked go... View full abstract»

• ### Transparent Microwave Absorber Based on Patterned Graphene: Design, Measurement, and Enhancement

Publication Year: 2017, Page(s):484 - 490
| | PDF (1362 KB) | HTML

A patterned graphene-based transparent microwave absorber is proposed in this paper. Graphene is transferred onto polyethylene terephthalate (PET) film, and patterned as μm-level periodic patches, so that a capacitive and resistive graphene surface is obtained at microwave band. By placing this graphene/PET film on the top of a glass substrate and applying fluorine-doped tin oxide film as t... View full abstract»

• ### Paper-Based Lithium-Ion Batteries Using Carbon Nanotube-Coated Wood Microfibers

Publication Year: 2013, Page(s):408 - 412
Cited by:  Papers (11)
| | PDF (650 KB) | HTML

Lithium-ion batteries using flexible paper-based current collectors have been developed. These current collectors were fabricated from wood microfibers that were coated with carbon nanotubes (CNT) through an electrostatic layer-by-layer nanoassembly process. The carbon nanotube mass loading of the presented (CNT-microfiber paper) current collectors is 10.1 μg/cm2. The capacities ... View full abstract»

• ### A Highly-parallel and Energy-efficient 3D Multi-layer CMOS-RRAM Accelerator for Tensorized Neural Network

Publication Year: 2017, Page(s): 1
| | PDF (4635 KB)

It is a grand challenge to develop highly-parallel yet energy-efficient machine learning hardware accelerator. This paper introduces a 3D multi-layer CMOS-RRAM accelerator for tensorized neural network (TNN). Highly parallel matrix-vector multiplication can be performed with low power in the proposed 3D multi-layer CMOS-RRAM accelerator. The adoption of tensorization can significantly compress the... View full abstract»

• ### Single-walled carbon nanotube electronics

Publication Year: 2002, Page(s):78 - 85
Cited by:  Papers (634)  |  Patents (55)
| | PDF (423 KB) | HTML

Single-walled carbon nanotubes (SWNTs) have emerged as a very promising new class of electronic materials. The fabrication and electronic properties of devices based on individual SWNTs are reviewed. Both metallic and semiconducting SWNTs are found to possess electrical characteristics that compare favorably to the best electronic materials available. Manufacturability issues, however, remain a ma... View full abstract»

• ### Temporal Learning Using Second-Order Memristors

Publication Year: 2017, Page(s):721 - 723
| | PDF (391 KB) | HTML

Utilizing internal dynamic processes in memristors may allow the devices to process temporal data natively. In this letter, we show the ability of second-order memristors to process information in the time domain, and discuss a memristive STDP network that can learn and classify temporal as well as classical data patterns. View full abstract»

• ### Graphene Terahertz Plasmon Oscillators

Publication Year: 2008, Page(s):91 - 99
Cited by:  Papers (286)  |  Patents (7)
| | PDF (1000 KB) | HTML

In this paper we propose and discuss coherent terahertz sources based on charge density wave (plasmon) amplification in two-dimensional graphene. The coupling of the plasmons to interband electron-hole transitions in population inverted graphene layers can lead to plasmon amplification through stimulated emission. Plasmon gain values in graphene can be very large due to the small group velocity of... View full abstract»

• ### Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

Publication Year: 2017, Page(s):727 - 735
| | PDF (1230 KB) | HTML

The experimental results from 8 nm diameter silicon nanowire junctionless field-effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/ $\mu$m for 1.0 V and 2.52 mA/ $\mu$m for 1.8 V gate ... View full abstract»

• ### Energy-Efficient Monolithic 3D on-Chip Memory Architectures

Publication Year: 2017, Page(s): 1
| | PDF (3051 KB)

Memory bandwidth is one of the major performance bottlenecks for chip multiprocessors, which continue to integrate an increasing number of cores with the help of Moore's Law. The growing disparity between the CPU clock rate and off-chip memory access speed is known as the Memory Wall. It is addressed by placing memory closer to the processor, such as stacking the memory directly on top of a... View full abstract»

• ### Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Publication Year: 2015, Page(s):238 - 242
Cited by:  Papers (7)
| | PDF (441 KB) | HTML

We report that control over the grain size and lateral growth of monolayer MoS2 film, yielding a uniform large-area monolayer MoS2 film, can be achieved by submitting the SiO2 surfaces of the substrates to oxygen plasma treatment and modulating substrate temperature in chemical vapor deposition (CVD) process. Scanning electron microscopy and atomic force microscopy... View full abstract»

• ### Enhancing responsivity and detectevity of Si-ZnO photo detector with growth of densely packed and aligned hexagonal nano-rods

Publication Year: 2017, Page(s): 1
| | PDF (2360 KB)

High performance photodiodes are desirable for ultra speed optical communication and high resolution optical instrumentation. Here, we report both theoretical and experimental optimization approaches for low cost chemo-thermal growth of hexagonal nanorods on Si-ZnO hetero-junction. The alignments of nano-rods were made by controlling etching rate with addition of 2 % isopropyl alcohol during proce... View full abstract»

• ### Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2

Publication Year: 2017, Page(s):582 - 587
| | PDF (1376 KB) | HTML

Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the at... View full abstract»

• ### Aluminum-Doped Zinc Oxide Transparent Electrode Prepared by Atomic Layer Deposition for Organic Light Emitting Devices

Publication Year: 2017, Page(s):634 - 638
| | PDF (690 KB) | HTML

Transparent conductive aluminum-doped zinc oxide (AZO) films are being introduced as alternatives to indium tin oxide (ITO) films, because they do not contain indium, which is expensive and toxic. In this study, the structural, electrical, and optical properties of AZO electrodes fabricated by atomic layer deposition (ALD) at a low temperature of 150 °C were examined by X-ray photoemission ... View full abstract»

• ### OxRAM RNG Circuits Exploiting Multiple Undesirable Nanoscale Phenomena

Publication Year: 2017, Page(s):560 - 566
| | PDF (692 KB) | HTML

Compact, low-power random number generators (RNG) are essential for applications such as stochastic-, bioinspired-computing, data-encryption, cryptography in communication and security systems. We demonstrate two highly scalable hybrid CMOS-OxRAM RNG implementations based on single OxRAM and 2-OxRAM -circuits. We show how multiple undesirable nanoscale OxRAM phenomena, such as reset-current fluctu... View full abstract»

• ### Performance Evaluation of Bilayer Graphene Nanoribbon Tunnel FETs for Digital and Analog Applications

Publication Year: 2017, Page(s):411 - 416
| | PDF (541 KB) | HTML

The recent advancement in the fabrication of narrow graphene nanoribbon with smooth edges has catalyzed the growth of nanoribbon based transistors. Motivated by these advances, we suggest bilayer graphene nanoribbon tunnel field-effect transistors (BLGNR-TFETs) for low voltage digital and analog applications. The device performance is analyzed by quantum transport simulation, based on self-consist... View full abstract»

• ### Mechanical Properties Tunability of Three-Dimensional Polymeric Structures in Two-Photon Lithography

Publication Year: 2017, Page(s):23 - 31
| | PDF (675 KB) | HTML Media

Two-photon (2P) lithography shows great potential for the fabrication of three-dimensional (3-D) micro- and nanomechanical elements, for applications ranging from microelectromechanical systems to tissue engineering, by virtue of its high resolution (<;100 nm) and biocompatibility of the photosensitive resists. However, there is a considerable lack of quantitative data on mechanical properties ... View full abstract»

• ### Low Store Power High-Speed High-Density Nonvolatile SRAM Design With Spin Hall Effect-Driven Magnetic Tunnel Junctions

Publication Year: 2017, Page(s):148 - 154
| | PDF (993 KB) | HTML

As static power caused by leakage currents has become a critical challenge for the CMOS technology power-gating techniques, which employ nonvolatile data retention circuits, e.g., nonvolatile static random-access memory (NV-SRAM) are expected to efficiently solve this challenge. One of the key features of NV-SRAM is to utilize nonvolatile devices, such as resistive RAM, phase change memory, and ma... View full abstract»

• ### Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices

Publication Year: 2013, Page(s):288 - 295
Cited by:  Papers (43)  |  Patents (2)
| | PDF (493 KB) | HTML

Memristive nanodevices can feature a compact multilevel nonvolatile memory function, but are prone to device variability. We propose a novel neural network-based computing paradigm, which exploits their specific physics, and which has virtual immunity to their variability. Memristive devices are used as synapses in a spiking neural network performing unsupervised learning. They learn using a simpl... View full abstract»

• ### Envelope-Function-Based Transport Simulation of a Graphene Ribbon With an Antidot Lattice

Publication Year: 2017, Page(s):534 - 544
| | PDF (1343 KB) | HTML

We have performed numerical simulations to study the effect of a regular lattice of antidots on the conductance, and in particular on the gap, of an armchair graphene ribbon. We have used an envelope-function approach, with a nonzero mass term mimicking the presence of the antidots. With a very efficient simulation procedure, consisting in a reciprocal space solution of the envelope-function equat... View full abstract»

• ### Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical Modeling

Publication Year: 2017, Page(s):58 - 67
| | PDF (1132 KB) | HTML

A short-channel negative capacitance gate-all-around tunnel field-effect transistor (NC-GAA-TFET) with a ferroelectric gate stack is proposed. Device performance is investigated by integrating three-dimensional (3-D) numerical simulation and the 1D Landau-Khalatnikov equation. It is shown that the NC-GAA-TFET has a steeper subthreshold swing and higher on-state current compared to conventional GAA... View full abstract»

• ### Interferometer Scanning Microwave Microscopy: Performance Evaluation

Publication Year: 2017, Page(s): 1
| | PDF (996 KB)

A systematic and quantitative comparison of electrical detection systems in scanning microwave microscopy is reported. Scanning microwave microscopy (SMM) is capable of investigating nanoscale electrical properties with high accuracy over a broad frequency range of 1-20 GHz. However, due to the passive matching network only discrete frequencies can be used every 1 GHz with varying signal-to-noise ... View full abstract»

• ### Design of a Ternary Memory Cell Using CNTFETs

Publication Year: 2012, Page(s):1019 - 1025
Cited by:  Papers (24)
| | PDF (793 KB) | HTML

This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. In this paper, a novel design of a ternary memory cell based on CNTF... View full abstract»

• ### Skybridge-3D-CMOS: A Fine-Grained 3D CMOS Integrated Circuit Technology

Publication Year: 2017, Page(s):639 - 652
| | PDF (2302 KB) | HTML

Parallel and monolithic three-dimensional (3-D) integration directions realize 3-D integrated circuits (ICs) by utilizing layer-by-layer implementations, with each functional layer being composed in 2-D. In contrast, vertically composed 3-D CMOS has eluded us likely due to the seemingly insurmountable requirement of highly customized complex routing and regional 3-D doping to form and connect CMOS... View full abstract»

• ### A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling

Publication Year: 2011, Page(s):250 - 255
Cited by:  Papers (105)
| | PDF (299 KB) | HTML

This paper introduces a behavior model of a memristive soild-state device for simulation with a simulation program for integrated circuits emphasis (SPICE) compatible circuit simulator. After showing the underlying functional mechanics and model equations of a memristor the SPICE equivalent circuit based on a charge controlled memristor is presented and discussed. Hereafter, a magnetic flux contro... View full abstract»

• ### Tunable Plasmonic SERS “Hotspots” on Au-Film Over Nanosphere by Rapid Thermal Annealing

Publication Year: 2017, Page(s):551 - 559
| | PDF (1159 KB) | HTML

In this work, a novel method combining fabrication of nonlithographic Au-film over nanosphere (AuFON) with gradual rapid thermal annealing (RTA) treatment was developed to produce a high performance of surface-enhanced Raman scattering (SERS) substrate. The highly uniform and periodic AuFON was achieved by the downscaling processs in the modified nanosphere lithography technique using 100-nm polys... View full abstract»

• ### Surface Effect and Nonlocal Effect on Nanowires Bent by a Point Force at an Arbitrary Axial Position

Publication Year: 2017, Page(s):527 - 533
| | PDF (854 KB) | HTML

Under different boundary conditions, the nanowires bent by a point force at an arbitrary axial position are studied analytically by considering the surface effect and the nonlocal effect. The surface effect is modeled to be the superposition of the forces induced from residual surface tension and surface elasticities. For the purpose of modeling the residual surface tension, the generalized Young-... View full abstract»

• ### On the Design and Analysis of Reliable RRAM-CMOS Hybrid Circuits

Publication Year: 2017, Page(s):514 - 522
| | PDF (2393 KB) | HTML

Resistive switching memories (RRAMs) are one of the most promising alternatives for nonvolatile storage and nonconventional computing systems. However, their behavior, and therefore their reliability, is limited by technology intrinsic constraints. Standard CMOS reliability analyses do not take into account RRAM-related misbehaviors. Consequently, new and more thorough characterization approaches ... View full abstract»

• ### Electrical Modeling and Analysis of Cu-CNT Heterogeneous Coaxial Through-Silicon Vias

Publication Year: 2017, Page(s):695 - 702
| | PDF (747 KB) | HTML

An equivalent-circuit model of Cu-carbon nanotube heterogeneous coaxial through-silicon vias (HCTSVs) in 3-D integrated circuits (3-D ICs) is proposed in this paper. Based on the complex effective conductivity method, the resistances and inductances of Cu-single walled carbon nanotube (SWCNT) HCTSVs and Cu-multi walled carbon nanotube (MWCNT) HCTSVs are compared with that of Cu coaxial through-sil... View full abstract»

• ### Benchmarking nanotechnology for high-performance and low-power logic transistor applications

Publication Year: 2005, Page(s):153 - 158
Cited by:  Papers (441)  |  Patents (3)
| | PDF (520 KB) | HTML

Recently there has been tremendous progress made in the research of novel nanotechnology for future nanoelectronic applications. In particular, several emerging nanoelectronic devices such as carbon-nanotube field-effect transistors (FETs), Si nanowire FETs, and planar III-V compound semiconductor (e.g., InSb, InAs) FETs, all hold promise as potential device candidates to be integrated onto the si... View full abstract»

• ### Fabrication of an Assembled Scanning Probe With Nitrogen Vacancy Centers in Diamond Particle

Publication Year: 2017, Page(s):545 - 550
| | PDF (656 KB) | HTML

Nitrogen vacancy (NV-) centers possess exceptional sensitivity to magnetic field even under ambient condition. The optically detectable electron spins and the atomic size make it a promising candidate for the advanced magnetic resonance imaging technique with nanoscale spatial resolution. In this work, we report on a novel method of seeking diamond particles with NV- centers ... View full abstract»

• ### Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition

Publication Year: 2009, Page(s):135 - 138
Cited by:  Papers (126)  |  Patents (13)
| | PDF (284 KB) | HTML

The advance of graphene-based nanoelectronics has been hampered due to the difficulty in producing single- or few-layer graphene over large areas. We report a simple, scalable, and cost-efficient method to prepare graphene using methane-based CVD on nickel films deposited over complete Si/SiO2 wafers. By using highly diluted methane, single- and few-layer graphene were obtained, as conf... View full abstract»

• ### High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop

Publication Year: 2017, Page(s):355 - 358
| | PDF (331 KB) | HTML

In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core-shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the structures is the introduction of passivation, which can be used to selectively grow active layers in desired structures. Through the fabrication methodology, core-shell NR... View full abstract»

## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.