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# IEEE Transactions on Nuclear Science

Includes the top 50 most frequently accessed documents for this publication according to the usage statistics for the month of

• ### Geant4 developments and applications

Publication Year: 2006, Page(s):270 - 278
Cited by:  Papers (1894)  |  Patents (5)
| | PDF (272 KB) | HTML

Geant4 is a software toolkit for the simulation of the passage of particles through matter. It is used by a large number of experiments and projects in a variety of application domains, including high energy physics, astrophysics and space science, medical physics and radiation protection. Its functionality and modeling capabilities continue to be extended, while its performance is enhanced. An ov... View full abstract»

• ### A $5.2~\mu \text{A}$ Quiescent Current LDO Regulator With High Stability and Wide Load Range for CZT Detectors

Publication Year: 2017, Page(s):1087 - 1094
| | PDF (5558 KB) | HTML

Cadmium zinc telluride detectors are the highly considered for room-temperature hard X-ray and gamma-ray detection. The readout systems are needed in the detectors to output the detecting data. The features of power supplies are very important for the readout circuits. In this paper, a low-dropout (LDO) regulator with very low power consumption and wide load variation is presented. A combining com... View full abstract»

• ### CCD soft X-ray imaging spectrometer for the ASCA satellite

Publication Year: 1994, Page(s):375 - 385
Cited by:  Papers (79)
| | PDF (1024 KB)

We describe the development of a charge-coupled device (CCD) array for use as a soft X-ray (0.4-12 keV) imaging spectrometer for the ASCA (formerly Astro-D) satellite. The CCDs are 420×420-pixel frame-transfer devices designed to be closely abutted to other chips on three sides of the imaging array. The imagers are made on 6500-Ω·cm p-type float-zone silicon for depletion depths... View full abstract»

• ### Review of displacement damage effects in silicon devices

Publication Year: 2003, Page(s):653 - 670
Cited by:  Papers (243)
| | PDF (516 KB) | HTML

This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identif... View full abstract»

• ### Basic mechanisms and modeling of single-event upset in digital microelectronics

Publication Year: 2003, Page(s):583 - 602
Cited by:  Papers (490)  |  Patents (3)
| | PDF (1410 KB) | HTML

Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Tech... View full abstract»

• ### TDC Array Tradeoffs in Current and Upcoming Digital SiPM Detectors for Time-of-Flight PET

Publication Year: 2017, Page(s):925 - 932
| | PDF (2153 KB) | HTML

Radiation detection used in positron emission tomography (PET) exploits the timing information to remove background noise and refine position measurement through time-of-flight information. Fine time resolution in the order of 10 ps full-width at half-maximum (FWHM) would not only improve contrast in the image, but would also enable direct image reconstruction without iterative or back-projected a... View full abstract»

• ### Laser Simulation of single event effects in pulse width Modulators

Publication Year: 2005, Page(s):2487 - 2494
Cited by:  Papers (6)
| | PDF (2032 KB) | HTML

Laser testing assists in identifying the sources of pulse width modulator (PWM) single event effect (SEE) sensitivity and reveals new details of PWM SEE behavior, such as enhanced sensitivity during output switching and delayed onset of latch-up near the single-event latch-up threshold. In combination with analysis to map PWM circuitry in the microchip dies, laser SEE test results provide insights... View full abstract»

• ### Soft X-Ray Photon Detection and Image Dissection Using Channel Multipliers

Publication Year: 1968, Page(s):541 - 550
Cited by:  Papers (26)
| | PDF (1350 KB)

The use of channel multipliers for the photo-electric detection of X-radiation in the wavelength range 2.1 - 67 Ã has been investigated. Measurements of photon detection efficiency are presented for a bare channel multiplier and for multipliers specially coated with photoemissive materials. The variation of photon detection efficiency with angle of incidence is shown to be in fair agreement with ... View full abstract»

• ### Total-Ionizing-Dose Effects in Modern CMOS Technologies

Publication Year: 2006, Page(s):3103 - 3121
Cited by:  Papers (190)  |  Patents (1)
| | PDF (1515 KB) | HTML

This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead for commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond. While many of the classical threats posed by ionizing radiation e... View full abstract»

• ### Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies

Publication Year: 2015, Page(s):1501 - 1515
Cited by:  Papers (8)
| | PDF (2959 KB) | HTML

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps a... View full abstract»

• ### A 32-Channel 13-b ADC for Space Applications

Publication Year: 2017, Page(s):1071 - 1079
| | PDF (3152 KB) | HTML

This paper presents a 13-b, 2.56-μs conversion time, 2 V input range, 32-channel single slope analog-to-digital converter (ADC) called OWB-1 and implemented in a 0.35-μm CMOS commercial technology. It is based on an improved Wilkinson architecture. An interpolator composed by a delay lock loop is used to increase the time resolution of the counter by a factor of 32, while keeping a l... View full abstract»

• ### Total ionizing dose effects in MOS oxides and devices

Publication Year: 2003, Page(s):483 - 499
Cited by:  Papers (236)  |  Patents (1)
| | PDF (744 KB) | HTML

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly. View full abstract»

• ### A Novel Read-Out Electronics Design Based on 1-Bit Sigma-Delta Modulation

Publication Year: 2017, Page(s):820 - 828
| | PDF (944 KB) | HTML

The conventional front-end electronics for PET imaging consist of an energy circuit and a timing circuit. A single channel in front-end electronics typically requires several amplifiers, an ADC and a TDC. In this paper, we present a novel front-end electronic design using 1-bit sigma-delta (Σ-Δ) modulation and an FPGA. The new design requires only one analog amplifier per channel. Th... View full abstract»

• ### Total Ionizing Dose Effects of Gamma-Ray Radiation on NbOx-Based Selector Devices for Crossbar Array Memory

Publication Year: 2017, Page(s):1535 - 1539
| | PDF (660 KB)

The transition metal oxide NbO2 is regarded as a promising selector device to be integrated with resistive random access memory for the high-density crossbar array architecture. Understanding its total ionizing dose (TID) response would help assess the reliability of using this selector device in radiation environments. In this paper, we investigate the TID effect of gamma-ray (... View full abstract»

• ### Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs

Publication Year: 2017, Page(s):367 - 373
| | PDF (1094 KB) | HTML

In this paper, a variety of flip-flop (FF) designs fabricated in a commercial 28-nm Fully-Depleted Silicon on Insulator (FDSOI) technology are evaluated for their single-event upset performance with ions and pulsed laser experiments. These FF designs consist of unhardened DFF, hardened DFF with stacked transistors in the inverters, and the layout-optimized DFFs. These DFFs were exposed to alpha pa... View full abstract»

• ### Comparison of a 65 nm CMOS Ring- and LC-Oscillator Based PLL in Terms of TID and SEU Sensitivity

Publication Year: 2017, Page(s):245 - 252
| | PDF (2462 KB) | HTML

In this work, a comparison has been made between a low noise ring-oscillator and an LC-oscillator Phase Locked Loop (PLL). An ASIC has been developed to conduct irradiation experiments targeting high-energy physics applications. Two different samples were irradiated up to a total ionizing dose (TID) in SiO2 of 200 Mrad and 600 Mrad with a 100°C thermal annealing step. Single-Even... View full abstract»

• ### A High-Linearity, Ring-Oscillator-Based, Vernier Time-to-Digital Converter Utilizing Carry Chains in FPGAs

Publication Year: 2017, Page(s):697 - 704
| | PDF (1187 KB) | HTML

Time-to-digital converters (TDCs) using dedicated carry chains of field programmable gate arrays (FPGAs) are usually organized in tapped-delay-line type which are intensively researched in recent years. However this method incurs poor differential nonlinearity (DNL) which arises from the inherent uneven bin granularity. This paper proposes a TDC architecture which utilizes the carry chains in a qu... View full abstract»

• ### Single-Event Performance of Sense-Amplifier Based Flip-Flop Design in a 16-nm Bulk FinFET CMOS Process

Publication Year: 2017, Page(s):477 - 482
| | PDF (900 KB) | HTML

The increasing need for high-speed logic circuits is causing the conventional flip-flop (FF) designs to migrate to differential FF designs. With the small magnitude of input voltages (and the resulting small noise margins) needed for proper operation, sense-amplifier based FF designs (SAFF) are susceptible to single-event effects (SEE). Single event upset (SEU) performance of high-speed SAFF desig... View full abstract»

• ### Total Ionizing Dose Effects on a 12-bit 40kS/s SAR ADC Designed With a Dummy Gate-Assisted n-MOSFET

Publication Year: 2017, Page(s):648 - 653
| | PDF (1346 KB) | HTML

A 12-bit 40kS/s successive approximation register analog-to-digital converter (ADC) designed with a dummy gate-assisted (DGA) n-MOSFET is presented for space applications requiring high resolution, low power consumption, and moderate conversion speed. Additionally, a custom-designed metal finger capacitor and a body-tied p-MOSFET protected by guard ring in a bootstrapping circuit were used to miti... View full abstract»

• ### Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL)

Publication Year: 2017, Page(s):512 - 518
| | PDF (1229 KB) | HTML

A persistent loss-of-lock error was experimentally observed in a 20 nm charge-pump phase-locked loop (PLL). Through circuit modeling and simulation, the observed error was attributed to a non-recoverable off-state leakage increase resulted from two-photon absorption (TPA) laser-induced damage. The laser-induced damage is consistent with results from 28 nm bulk transistors. View full abstract»

• ### Radiation Effects in MOS Oxides

Publication Year: 2008, Page(s):1833 - 1853
Cited by:  Papers (192)
| | PDF (1872 KB) | HTML

Electronic devices in space environments can contain numerous types of oxides and insulators. Ionizing radiation can induce significant charge buildup in these oxides and insulators leading to device degradation and failure. Electrons and protons in space can lead to radiation-induced total-dose effects. The two primary types of radiation-induced charge are oxide-trapped charge and interface-trap ... View full abstract»

• ### A tutorial on art (algebraic reconstruction techniques)

Publication Year: 1974, Page(s):78 - 93
Cited by:  Papers (89)  |  Patents (2)
| | PDF (1879 KB)

Algebraic reconstruction techniques (ART) were introduced by Gordon et al. (1970) for solving the problem of three dimensional reconstruction from projections in electron microscopy and radiology. An X-ray photograph represents the projection of the three-dimensional distribution of X-ray densities within the body onto a two-dimensional plane. A finite number of such photographs taken at different... View full abstract»

• ### Picosecond Resolution Time-to-Digital Converter Using ${{rm G}_{rm m}} hbox{-C}$ Integrator and SAR-ADC

Publication Year: 2014, Page(s):852 - 859
Cited by:  Papers (4)
| | PDF (1392 KB) | HTML

A picosecond resolution time-to-digital converter (TDC) is presented. The resolution of a conventional delay chain TDC is limited by the delay of a logic buffer. Various types of recent TDCs are successful in breaking this limitation, but they require a significant calibration effort to achieve picosecond resolution with a sufficient linear range. To address these issues, we propose a simple metho... View full abstract»

• ### SEU hardening of field programmable gate arrays (FPGAs) for space applications and device characterization

Publication Year: 1994, Page(s):2179 - 2186
Cited by:  Papers (35)  |  Patents (7)
| | PDF (932 KB)

Field Programmable Gate Arrays (FPGAs) are being used in space applications because of attractive attributes: good density, moderate speed, low cost, and quick turn-around time. However, these devices are susceptible to Single Event Upsets (SEUs). An approach using triple modular redundancy (TMR) and feedback was developed for flip-flop hardening in these devices. Test data showed excellent result... View full abstract»

• ### Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections

Publication Year: 2017, Page(s):441 - 448
| | PDF (1508 KB) | HTML

A set of upset criteria based on circuit characteristic switching time frame is developed and used to bridge transistor-level TCAD simulations to circuit-level single-event (SE) upset cross sections for advanced (fast and small) digital circuits. Interpretation of the measured and 3D TCAD simulated single-event upset (SEU) responses of bulk planar circuits and bulk FinFET circuits using the short-... View full abstract»

• ### A General Self-Organized Tree-Based Energy-Balance Routing Protocol for Wireless Sensor Network

Publication Year: 2014, Page(s):732 - 740
Cited by:  Papers (27)
| | PDF (1259 KB) | HTML

Wireless sensor network (WSN) is a system composed of a large number of low-cost micro-sensors. This network is used to collect and send various kinds of messages to a base station (BS). WSN consists of low-cost nodes with limited battery power, and the battery replacement is not easy for WSN with thousands of physically embedded nodes, which means energy efficient routing protocol should be emplo... View full abstract»

• ### Design and First Characterization of Active and Slim-Edge Planar Detectors for FEL Applications

Publication Year: 2017, Page(s):1062 - 1070
| | PDF (2597 KB) | HTML

This paper reports on the development of a dedicated technology for the fabrication of pixelated edgeless sensors to be used in X-ray imaging applications at free electron laser (FEL) facilities. The process was developed with the goal of producing planar sensors suitable for the tight FEL application requirements in terms of collection speed, spatial resolution, and radiation tolerance. At the sa... View full abstract»

• ### The Gain and Time Characteristics of Microchannel Plates in Various Channel Geometries

Publication Year: 2017, Page(s):1080 - 1086
| | PDF (5636 KB) | HTML

Microchannel plates (MCPs) are widely used as electron, ion, and X-ray detectors. The gain factor and time resolution of the MCP are strongly dependent on its operating and geometry parameters (applied voltage, length-to-diameter ratio, bias angle, and electrode penetration depth). Measurements about this dependence are sparse and do not cover the full range of the parameters. In this paper, 3-D s... View full abstract»

• ### Single-Event Performance and Layout Optimization of Flip-Flops in a 28-nm Bulk Technology

Publication Year: 2013, Page(s):2782 - 2788
Cited by:  Papers (28)
| | PDF (833 KB) | HTML

Alpha, neutron, and heavy-ion single-event measurements were performed on both high-performance and hardened flip-flop designs in a 28-nm bulk CMOS technology. The experimental results agree very well with simulation predictions and confirm that event error rates can be reduced dramatically using effective layout design. View full abstract»

• ### Simplified SEE Sensitivity Screening for COTS Components in Space

Publication Year: 2017, Page(s):882 - 890
| | PDF (1268 KB) | HTML

We introduce an approach aimed at prescreening COTS components according to their single-event effect (SEE) sensitivity for space missions in which a complete characterization of their individual response to protons and heavy ions is not feasible due to cost and time constraints. The method is applied to a set of SRAM memories for single-event upset (SEU) and single-event latchup (SEL) and the res... View full abstract»

• ### Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

Publication Year: 2002, Page(s):3002 - 3008
Cited by:  Papers (125)
| | PDF (447 KB) | HTML

Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track pro... View full abstract»

• ### Recent progress in CdTe and CdZnTe detectors

Publication Year: 2001, Page(s):950 - 959
Cited by:  Papers (242)  |  Patents (5)
| | PDF (296 KB) | HTML

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. The high atomic number of the materials (ZCd =48, ZTe=52) gives a high quantum efficiency in comparison with Si. The large bandgap energy (Eg~1.5 eV) allows us to operate the detector at room temperature. However, a con... View full abstract»

• ### Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Epitaxial Layer Thickness

Publication Year: 2017, Page(s):38 - 44
| | PDF (1667 KB) | HTML

This paper focuses on radiation effects on process optimized CMOS image sensors. Several technological parameters are varying, especially the epitaxial layer thickness, to reach the best electro-optical performances of the image sensors. The goal of the study is to show how radiation damages the gain brought by these parameters. Proton irradiations were used to study cumulative dose effects. As pr... View full abstract»

• ### Design and Characterization of a Gradient-Transparent RF Copper Shield for PET Detector Modules in Hybrid MR-PET Imaging

Publication Year: 2017, Page(s):1118 - 1127
| | PDF (1977 KB) | HTML

This paper focuses on the design and the characterization of a frequency-selective shield for positron emission tomography (PET) detector modules of hybrid magnetic resonance-PET scanners, where the shielding of the PET cassettes is located close to the observed object. The proposed shielding configuration is designed and optimized to guarantee a high shielding effectiveness (SE) of up to 60 dB fo... View full abstract»

• ### Shashlik Calorimeters With Embedded SiPMs for Longitudinal Segmentation

Publication Year: 2017, Page(s):1056 - 1061
| | PDF (2345 KB) | HTML

Effective longitudinal segmentation of shashlik calorimeters can be achieved taking advantage of the compactness and reliability of silicon photomultipliers. These photosensors can be embedded in the bulk of the calorimeter and are employed to design very compact shashlik modules that sample electromagnetic and hadronic showers every few radiation lengths. In this paper, we discuss the performance... View full abstract»

• ### Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology

Publication Year: 2017, Page(s):204 - 211
| | PDF (1813 KB) | HTML

A 20.4 GHz VCO with a tuning range of 610 MHz (3%) was designed and fabricated in a 32 nm CMOS silicon-on-insulator technology. At 36°C, the VCO achieves an output power of 0.1 dBm and a phase noise of -99 dBc/Hz at 1 MHz offset from the center frequency. TID experiments on the VCO operating at 36°C, 75°C, and 100°C show degradation in frequency, output power, and phase... View full abstract»

• ### Radiation-Hardened Fiber Bragg Grating Based Sensors for Harsh Environments

Publication Year: 2017, Page(s):68 - 73
| | PDF (1741 KB) | HTML

Fiber Bragg Grating (FBG) based sensors are nowadays used for several applications, but, even if they present advantages for their incorporation into radiation environments, commercial-off-the-shelf devices cannot still be used in harsh conditions. We recently reported a procedure for fabricating FBGs resistant to severe constraints combining both high radiation doses up to MGy levels and operatio... View full abstract»

• ### Analyzing Reliability and Performance Trade-Offs of HLS-Based Designs in SRAM-Based FPGAs Under Soft Errors

Publication Year: 2017, Page(s):874 - 881
| | PDF (1270 KB) | HTML

The increasing system complexity of FPGA-based hardware designs and shortening of time-to-market have motivated the adoption of new designing methodologies focused on addressing the current need for high-performance circuits. High-Level Synthesis (HLS) tools can generate Register Transfer Level (RTL) designs from high-level software programming languages. These tools have evolved significantly in ... View full abstract»

• ### Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology

Publication Year: 2017, Page(s):113 - 118
| | PDF (1770 KB) | HTML

Measuring single-event transient (SET) pulse widths is critical for developing proper mitigation schemes to single-event effects (SEE), especially for advanced technologies. This paper presents a test chip design implementing advanced techniques for measuring SETs implemented in a 28 nm Ultra-Thin Body and Box (UTBB) FDSOI technology. Experimental results of heavy ion and Co-60 irradiation experim... View full abstract»

• ### Performance Comparison of VxWorks, Linux, RTAI, and Xenomai in a Hard Real-Time Application

Publication Year: 2008, Page(s):435 - 439
Cited by:  Papers (46)
| | PDF (247 KB) | HTML

We report on a set of performance measurements executed on VMEbus MVME5500 boards equipped with MPC7455 PowerPC processor, running four different operating systems: Wind River VxWorks, Linux, RTAI, and Xenomai. Some components of RTAI and Xenomai have been ported to the target architecture. Interrupt latency, rescheduling and inter-process communication times are compared in the framework of a sam... View full abstract»

• ### Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation

Publication Year: 2017, Page(s):654 - 664
| | PDF (1576 KB) | HTML

Low-energy (<;10 MeV) proton-induced single event upsets (SEUs) were investigated through proton and heavy ion experiments on a 65 nm CMOS bulk SRAM. It is unlikely that 2-10 MeV proton direct ionization can induce SEUs in the 65 nm SRAM and the observed single-bit upsets (SBUs) and multiple cell upsets (MCUs) are mainly induced by the ionization from the recoil ions. The MCUs induced by low-en... View full abstract»

• ### Radiation effects in SOI technologies

Publication Year: 2003, Page(s):522 - 538
Cited by:  Papers (178)  |  Patents (8)
| | PDF (1619 KB) | HTML

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened applications for many years and are rapidly becoming a main-stream commercial technology. The authors review the total dose, single-event effects, and dose rate hardness of SOI devices. The total dose response of SOI devices is more complex than for bulk-silicon devices due to the buried oxide. Radiation-induced tra... View full abstract»

• ### Research on a Neutron Detector With a Boron-Lined Honeycomb Neutron Converter

Publication Year: 2017, Page(s):1048 - 1055
| | PDF (2134 KB) | HTML

A new design of the boron-lined gaseous neutron detector composed of a boron-lined honeycomb neutron converter and an electron multiplier is proposed in this paper. The motivation for this research was to decrease the manufacturing difficulty and improve the robustness of the boron-lined gaseous neutron detector. The numerous anode wires in the traditional designs were removed, and the gas electro... View full abstract»

• ### Strong Correlation Between Experiment and Simulation for Two-Photon Absorption Induced Carrier Generation

Publication Year: 2017, Page(s):1133 - 1136
| | PDF (615 KB) | HTML

This correspondence comments on the correlation between measured and simulated charge collection in two diode structures presented in [1]. In [1], results from pulsed-laser-induced charge deposition via two-photon absorption revealed reasonable correlation between experimental data and simulations in some aspects but showed lack of correlation in terms of the measured and predicted magnitudes of t... View full abstract»

• ### High Performance FPGA-Based DMA Interface for PCIe

Publication Year: 2014, Page(s):745 - 749
Cited by:  Papers (8)
| | PDF (628 KB) | HTML

We present a data communication suite developed for use in the Track Engine Trigger for the IceCube Neutrino Observatory at the South Pole. The suite is applicable to any bidirectional Direct Memory Access (DMA) transfer between FPGA logic and system memory on a host PC via PCIe. The suite contains a DMA controller firmware, test benches, a Linux driver and a user application for DMA and Periphera... View full abstract»

• ### $1/f$ Noise and Defects in Microelectronic Materials and Devices

Publication Year: 2015, Page(s):1462 - 1486
Cited by:  Papers (14)
| | PDF (4578 KB) | HTML

This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess (1/ f) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to 1/f noise. In contrast, for most semiconductor devices, the noise usually results f... View full abstract»

• ### Total Ionizing Dose Effects on HfO2-Passivated Black Phosphorus Transistors

Publication Year: 2017, Page(s):170 - 175
Cited by:  Papers (1)
| | PDF (1263 KB) | HTML

Electrical stress and 10-keV x-ray irradiation and annealing responses are evaluated for HfO2-passivated black phosphorous (BP) MOSFETs with HfO2 gate dielectrics. Device characteristics are stable during constant gate-voltage stress up to at least ±1 V. Significant negative threshold shifts, mobility degradation, and increases in subthreshold swing occur during both p... View full abstract»

• ### Nuclear Power Plant Thermocouple Sensor-Fault Detection and Classification Using Deep Learning and Generalized Likelihood Ratio Test

Publication Year: 2017, Page(s):1526 - 1534
| | PDF (1100 KB)

In this paper, an online fault detection and classification method is proposed for thermocouples used in nuclear power plants. In the proposed method, the fault data are detected by the classification method, which classifies the fault data from the normal data. Deep belief network (DBN), a technique for deep learning, is applied to classify the fault data. The DBN has a multilayer feature extract... View full abstract»

• ### On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

Publication Year: 2017, Page(s):1142 - 1150
| | PDF (2413 KB) | HTML

Best practice in mitigation strategies for single-event transients (SETs) in radio-frequency (RF) receiver modules is investigated using a variety of integrated receivers utilizing inverse-mode silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs). The receivers were designed and implemented in a 130-nm SiGe BiCMOS technology platform. In general, RF switches, low-noise amplifi... View full abstract»

• ### An FPGA-Based High-Speed Error Resilient Data Aggregation and Control for High Energy Physics Experiment

Publication Year: 2017, Page(s):933 - 944
| | PDF (2089 KB) | HTML

Due to the dramatic increase of data volume in modern high energy physics (HEP) experiments, a robust high-speed data acquisition (DAQ) system is very much needed to gather the data generated during different nuclear interactions. As the DAQ works under harsh radiation environment, there is a fair chance of data corruption due to various energetic particles like alpha, beta, or neutron. Hence, a m... View full abstract»

## Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA