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IEE Proceedings I - Solid-State and Electron Devices

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  • Metal-semiconductor contacts

    Publication Year: 1982
    Cited by:  Papers (16)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2120 KB)

    A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions. View full abstract»

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  • Modern dispenser cathodes

    Publication Year: 1981, Page(s):19 - 32
    Cited by:  Papers (15)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1918 KB)

    The paper is a review of tungsten-base dispenser cathodes. Particular emphasis is placed on the many factors that contribute to the performance of a dispenser cathode. The review includes a history of the evolution of the modern dispenser cathode, fabrication techniques and their influence on cathode performance, state-of-the-art performance characteristics for various types of dispenser cathodes ... View full abstract»

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  • Direct-gap group IV semiconductors based on tin

    Publication Year: 1982, Page(s):189 - 192
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (697 KB)

    The MBE growth on InSb (and CdTe) of thin films of tin with diamond structure led to two unexpected findings: (i) photovoltaic behaviour suggesting an energy gap of 0.12eV, (ii) stabilisation of the diamond structure to about 70°C (compared with 13°C for bulk material). One explanation of semiconductivity is a strain-induced splitting of the Groves-Paul degeneracy which has been taken to confer ... View full abstract»

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  • Measurement of threshold voltage and channel length of submicron MOSFETs

    Publication Year: 1988, Page(s):162 - 164
    Cited by:  Papers (18)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (339 KB)

    A simple method for characterisation of MOSFETs with appreciable source and drain series resistance is presented. The ratio g/g1/2m of conductance g and transconductance gm is shown to be a linear function of gate bias, whose intercept equals the threshold voltage and whose slope is proportional to the square root of the channel length. The method is illustrated using measurements on 0.4 ¿m to 1.... View full abstract»

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  • CMOS integrated circuit for differential monitoring of spacecraft battery cell voltages

    Publication Year: 1988, Page(s):151 - 154
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (350 KB)

    The paper describes a circuit technique that enables the differential monitoring of battery cell voltages to be combined with digital logic on a single CMOS chip. Junction isolation of the n-well and thick MOS capacitors are used to remove the high common mode voltage present at each battery cell. The resulting small voltage is ground referenced and can be processed by on-chip AD converters. View full abstract»

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  • High-voltage device termination techniques a comparative review

    Publication Year: 1982, Page(s):173 - 179
    Cited by:  Papers (14)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (912 KB)

    High-voltage power device performance is often limited by the ability to approach nearly ideal behaviour at the edges of the chip. Consequently, a large number of termination techniques have been explored to reduce the surface electric field at the edges of devices, and so to maximise the breakdown voltage. The paper provides a review of these techniques. A comparison between the various approache... View full abstract»

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  • Hot-carrier effects in submicrometre MOS VLSIs

    Publication Year: 1984, Page(s):153 - 162
    Cited by:  Papers (27)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (770 KB)

    Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-carrier injection mechanisms, (b) the device degradation, (c) the hot-carrier resistant device structures and (d) the hot-carrier phenomena under a bias of less than 3 V. Two significant hot-carrier injection mechanisms are proposed which are different from those of the channel hot-electron (CHE) and subst... View full abstract»

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  • Review of transducer applications of polyvinylidene fluoride

    Publication Year: 1983, Page(s):219 - 224
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (881 KB)

    In recent years, there has been considerable interest expressed in the polymer polyvinylidene fluoride, stemming largely from its piezoelectric and pyroelectric properties. The wide range of applications for this transducer material is reviewed, and a number of applications are described in greater detail, in particular for use as an acoustically transparent membrane hydrophone for transducer cali... View full abstract»

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  • Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques

    Publication Year: 1981, Page(s):44 - 52
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (900 KB)

    The determination of both the energy and the spatial distribution of interface states of an MOS transistor utilising charge-pumping measurements is described. The energy distribution of interface states is determined by measuring the charge-pumping current as a function of gate bias at several temperatures. Although the energy profile obtained shows several maxima and minima, a gradual increase in... View full abstract»

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  • High-magnetic-field Van der Pauw method Magnetoresistance measurement and applications

    Publication Year: 1982, Page(s):125 - 130
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (758 KB)

    The paper develops a simple theory to account for the magnetoresistance influence on Van der Pauw-type experiments (i.e. resistivity and Hall coefficient RH measurements in arbitrarily shaped samples). In particular, it is proved that the voltage developed between two nonsuccessive contacts includes not only the usual Hall term (involving the magnetic field and RH) but also an additional term prop... View full abstract»

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  • New hot-carrier injection and device degradation in submicron MOSFETs

    Publication Year: 1983, Page(s):144 - 150
    Cited by:  Papers (34)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (709 KB)

    New kinds of hot-carrier injection mechanisms, which are different from channel hot-electron and substrate hot-electron injection mechanisms already reported by Ning, et al., are presented. These are first drain avalanche hot-carrier (DAHC) injection and secondly substrate current induced hot-electron (SCHE) injection. DAHC injection is due to the emission of electrons and holes heated in the drai... View full abstract»

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  • Distortion in CMOS operational amplifier circuits

    Publication Year: 1984, Page(s):129 - 134
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (815 KB)

    The paper presents a nonlinear distortion analysis of three basic CMOS inverter circuits, namely PMOS load, constant-current source load and push-pull inverter, and compares their performance experimentally. The analysis is based on a small-signal MOSFET model including the channel-length modulation effect. The theoretical predictions are compared with measurements made on inverters, and incorpora... View full abstract»

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  • High-precision MOS current mirror

    Publication Year: 1984, Page(s):170 - 175
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (462 KB)

    Matching accuracies of current mirrors using SIMOX technology are discussed. The variation in matching errors has been both qualitatively and quantitatively analysed for MOS current mirrors. Matching errors at low operating currents are dominated by variations in threshold voltage and are inversely proportional to the drain current. In high-current operations, however, they are not dependent on dr... View full abstract»

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  • High-injection open-circuit voltage decay in pn-junction diodes with lightly doped bases

    Publication Year: 1986, Page(s):181 - 184
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (560 KB)

    Results of experimental studies of open-circuit voltage decay (OCVD) in a high resistivity (3000 ¿ cm) base (i.e. lightly doped) pn-junction diode are reported. For moderate values of applied junction voltage, a rapid initial decay followed by a slow decay is observed. As the applied junction voltage increases to higher values, the initial drop becomes more rapid, it is followed by a plateau and ... View full abstract»

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  • Analytical modelling of depletion-mode MOSFET with short- and narrow-channel effects

    Publication Year: 1981, Page(s):225 - 238
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1445 KB)

    As we move into the VLSI era, many investigations have been performed on enhancement-mode MOS transistors, and the results have often been used for the depletion-mode device. In order to evaluate the differences from the usual enhancement-mode device, and to understand its own behaviour, we have first made an accurate modelling of a large and wide buried-channel device, assuming a step doping prof... View full abstract»

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  • Stability of amorphous-silicon thin-film transistors

    Publication Year: 1983, Page(s):2 - 4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (394 KB)

    The stability of amorphous-silicon/silicon-nitride thin-film transistors has been investigated by measuring the time dependence of the source-drain current decay under a constant DC gate bias at a fixed temperature. At all temperatures (25¿100°C) and gate voltages (6¿36V) used in our experiments, the current decay is due entirely to a shift in the threshold voltage caused by electron trapping i... View full abstract»

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  • Large-signal circuit model for simulation of injection-laser modulation dynamics

    Publication Year: 1981, Page(s):180 - 184
    Cited by:  Papers (44)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (602 KB)

    A new large-signal circuit model of a heterojunction injection laser is presented. The model includes the current/voltage characteristics of the semiconductor heterojunction and the electro-optical dynamics of the active layer. It enables the laser and its electrical drive circuit to be analysed in a unified manner. The model can be easily implemented on general-purpose nonlinear circuit analysis ... View full abstract»

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  • Comparison of methods used for determining base spreading resistance

    Publication Year: 1980, Page(s):53 - 61
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (959 KB)

    A study of the many methods used for measuring base spreading resistance, rbb' has shown that some of them are inaccurate or unfeasible when applied to planar transistors. Methods investigated cover the d.c.to microwave frequency range and include coherent and incoherent signal measurements. Comparisons are also made of measured and theoretical values for several types of device. The thermal-noise... View full abstract»

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  • Analysis and understanding of GaAs MESFET behaviour in power amplification

    Publication Year: 1987
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (990 KB)

    The paper provides new understanding and analysis of the behaviour of GaAs MESFETs under large signal conditions. It uses an experimental study carried out on an active load bench of the Takayama type with devices made by various methods and a numerical dynamic simulation based on a completely physical description taking into account the nonstationary electronic dynamics, the 2-dimensional effects... View full abstract»

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  • Monte Carlo simulation of submicron GaAs n+ -i(n)-n+ diode

    Publication Year: 1982, Page(s):131 - 136
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (685 KB)

    Monte Carlo simulation of electron transport in a GaAs diode, of n+ -i(n)-n+ structure, with a 0.25 μm - or 0.5 μm -long active layer is described. The anode voltage ranges from 0.25 V to 1.0 V. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potential, and average electron velocity are ... View full abstract»

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  • Band structure of δ-Sn and Ge-Sn alloys

    Publication Year: 1984, Page(s):109 - 110
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (269 KB)

    C.H.L. Goodman contains statements which, if correct, would cast doubt upon much of the experimental work done prior to 1981 on a-Sn, the diamond lattice, semiconducting phase of tin. In this article, we review the evidence and argue that there already exists in the literature ample rebuttal of Goodman's thesis. View full abstract»

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  • Microwave switching performance of high -speed optoelectronic switches: An efficiency comparison of the basic types

    Publication Year: 1981, Page(s):193 - 196
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (459 KB)

    Presently, four basic types of optoelectronic switches are known to be successfully applicable for high-speed optoelectronic microwave switching. A comparison of these devices in terms of maximum power transmission coefficient as a function of optical wavelength is reported. It is found that the substrate edge excitation method offers the highest overall efficiency, and is, therefore, especially p... View full abstract»

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  • Power MOSFET dynamic large-signal model

    Publication Year: 1983, Page(s):73 - 79
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (904 KB)

    A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, ... View full abstract»

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  • Phthalocyanine Langmuir Blodgett-fiim gas detector

    Publication Year: 1983, Page(s):260 - 263
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (529 KB)

    The deposition of Langmuir-Blodgett films of an asymmetrically substituted copper phthalocyanine is reported. Capacitance and optical absorption data reveal that these films can be deposited in a reproducible manner; results are also presented showing the extreme sensitivity of their electrical conductivity to ambients such as nitrogen dioxide. The relatively fast recovery times, compared with tho... View full abstract»

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  • Effects of dust on the performance of concentrator photovoltaic cells

    Publication Year: 1985, Page(s):5 - 8
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (439 KB)

    The effect of dust on the performance of photovoltaic concentrators has been investigated. The dust concentration in the air was measured continuously during the test period, and the rate of dust accumulation on the concentrator's surface was determined. For the purpose of comparison, an identical concentrator, the surface of which was kept clean, was evaluated simultaneously with the dusty concen... View full abstract»

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  • Thermal analysis of a dual-in-line package using the finite-element method

    Publication Year: 1987, Page(s):23 - 31
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1090 KB)

    The thermal failure of electronic systems is becoming an increasingly difficult design problem, because of the trend to increase the packing density of components. This paper describes research in which the finite-element method (FEM) is used to investigate steady-state heat transfer in dual-in-line microelectronic package (DIP). Although the paper provides data for the specialist in package desig... View full abstract»

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  • Etch-induced MOS guard-ring-protected schottky-barrier diodes

    Publication Year: 1984, Page(s):63 - 65
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (347 KB)

    A simple technique for the fabrication of Schottky-barrier diodes with near ideal characteristics is discussed. The fabrication employs a two mask process with an isotropic etching step to round off the corners of the metallurgical junction. A self-aligned MOS guard ring is also incorporated, the use of which is optional. View full abstract»

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  • Sensor applications of thick-film technology

    Publication Year: 1988, Page(s):77 - 84
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1147 KB)

    The impact of thick-film technology on the development of new, inexpensive, robust and miniaturised sensors is discussed in the light of new designs and results by the authors and others. The three aspects covered are the realisation of electronic systems within sensors, the provision of support structures for sensor materials and the development of new primary sensors in the form of strain gauges... View full abstract»

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  • Negative differential output conductance of self heated power MOSFETs

    Publication Year: 1986, Page(s):177 - 179
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (316 KB)

    Pulsed and continuous operational curves for MOS power transistors are compared. The latter show pronounced negative differential output conductance of the drain, which is explained in terms of a mathematical model. The potential hazards of this phenomenon are discussed. View full abstract»

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  • Visual indication of locally varying photoconductivity

    Publication Year: 1984, Page(s):77 - 80
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (689 KB)

    The paper deals with the visual indication of a locally varying carrier density or photoconductivity, which is optically generated within a semiconductor substrate and extends over a distance of some millimetres up to some tens of millimetres. The induced profile is conventionally displayed on a CRT using a special substrate-edge excited microstrip device that works as the sensing element. The tec... View full abstract»

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  • Effects of masking oxide on diffusion into silicon

    Publication Year: 1981, Page(s):185 - 188
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (434 KB)

    During semiconductor processing it is common to use check slices to monitor individual process steps. Unfortunately, the sheet resistance values obtained from check slices do not always agree with actual resistor values made on slices diffused at the same time. The effect has been studied for the case of boron deposition from a vapour source and found to be real and due to the masking oxide which ... View full abstract»

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  • Measurement of lifetime of photoinjected carriers in solar cells by reverse voltage pulse response

    Publication Year: 1980, Page(s):20 - 24
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (606 KB)

    Transient response of p-n junction solar cells under constant illumination is studied by applying a reverse voltage pulse. It is shown that, by a proper choice of current in the external circuit, results similar to those in open-circuit voltage-decay method or reverse-voltage recovery method could be obtained. Thus an extremely simple circuit allows lifetime determination by keeping the cell under... View full abstract»

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  • Modelling DC characteristics of dual-gate GaAs MESFETs

    Publication Year: 1983, Page(s):182 - 186
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (631 KB)

    An analytical DC nonlinear model for the dual-gate GaAs MESFET is reported. Explicit solutions for the internal voltages, the various operating modes and the overall output transfer characteristics are given in terms of the applied external voltages. The model representation is particularly efficient and its defining parameters are rapidly and simply evaluated directly from the data sheet. The val... View full abstract»

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  • Noise figure of m.e.s.f.e.t.s

    Publication Year: 1980, Page(s):1 - 8
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (914 KB)

    The noise figure of a m.e.s.f.e.t. is calculated as a function of drain current using the gradual channel approximation and the Shockley impedance-field technique. The results are conveniently presented as a single universal family of curves with no adjustable empirical factors. The analytical results are compared with those from a 2-dimensional computer simulation. View full abstract»

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  • Theory of switching in p-n-insulator (tunnel)-metal devices: thick-tunnel oxides and indirect tunnel effects

    Publication Year: 1980, Page(s):111 - 118
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (816 KB)

    The four-layered m.i.s.s. device (metal-tunnel insulator-n-p semiconductor) displays a current-controlled negative resistance in its I/V characteristics. This switching mechanism is the result of a regenerative feedback interaction between the p-n junction and the metal-tunnel insulator-semiconductor parts of the device. The modes of operation of the m.i.s.s. can be classified into avalanche or pu... View full abstract»

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  • Modified strong-inversion potential for accurate modelling of long-channel MOS transistors

    Publication Year: 1983, Page(s):57 - 60
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (409 KB)

    In long-channel MOS transistor modelling, the classical strong-inversion surface potential ¿S,i (y1=2¿F+V(y), where ¿F denotes the Fermi potential of the bulk material and V(y) the local potential in the channel with respect to the source electrode, is widely used. It is demonstrated in the paper that this expression for the surface potential in strong inversion may be inaccurate in certain cas... View full abstract»

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  • Simple and continuous MOSFET models for the computer-aided design of VLSI

    Publication Year: 1985, Page(s):187 - 194
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (970 KB)

    Simple CAD models are proposed for the short-channel enhancement-mode MOSFET. The conventional use of drain bias modulation of channel length to describe saturation characteristics has been discarded and replaced by drain bias enhancement of channel charge for p-channel transistors and of channel velocity for n-channel transistors. The models possess continuity of current, transconductance and out... View full abstract»

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  • A brief analysis of the transient forward voltage drop in fast diodes

    Publication Year: 1985, Page(s):277 - 280
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (422 KB)

    The transient forward voltage drop of fast diodes for medium power circuits is investigated using a computer model. Fast diodes, of both pn and PIN structures, are experimentally examined for a range of electrical and physical parameters. A multiple curvilinear statistical regression was used on the results and an empirical relationship is presented. View full abstract»

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  • Quasisaturation effect in high-voltage VDMOS transistors

    Publication Year: 1985, Page(s):42 - 46
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (589 KB)

    In this paper dealing with the so-called quasisaturation current limitation in high-voltage VDMOS transistors, the authors have given a linear law on the dependence of the on-state conductance on the square-root of the drain bias. A four-section model, taking into account the pinching of the drain epilayer by the space-charge extensions and the current spreading in the bulk, accounts for the quasi... View full abstract»

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  • Optimised travelling-wave amplifier with two parallel-gate transmission lines

    Publication Year: 1985, Page(s):140 - 142
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (341 KB)

    A simple optimisation procedure for the design of travelling-wave amplifiers with two parallel gatelines and a common drain line is presented which utilises the full impedance matching potential involved. The parameters to be optimised for best broad-band performance of the amplifier are the characteristic impedances and, simultaneously, the line section lengths. The predicted performance of a des... View full abstract»

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  • Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias

    Publication Year: 1980, Page(s):312 - 316
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (555 KB)

    An experimental investigation is undertaken into the quasistatic and nonequilibrium response of an m.o.s. system to a constant gate-current bias. For the quasistatic condition, it is shown that the inverse total semiconductor capacitance can be extracted directly, in contrast to the slow-ramp quasistatic C/V measurement. Under nonequilibrium conditions the main aim has been to investigate the effe... View full abstract»

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  • Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

    Publication Year: 1984, Page(s):183 - 187
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (425 KB)

    The influence of the aluminium content on the photovoltaic performance of the p-Ga1¿xAlxAs/p-GaAs/n-GaAs structure is investigated. An enhanced high-photon-energy spectral response is observed when the window layer has a direct gap. Also short-circuit currents and conversion efficiencies calculated in these devices indicate high values in the neighbourhood of those obtained with a high aluminium ... View full abstract»

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  • Measurement of thermal resistance using electrical methods

    Publication Year: 1987, Page(s):51 - 56
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (823 KB)

    The electrical method of measuring thermal resistance is examined in detail and compared with results obtained using infra-red thermal imaging. It is shown that the measurement of thermal resistance using electrical methods can be very inaccurate, particularly when used to measure multicell structures or very large area devices. View full abstract»

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  • Liquid-crystal displays: an established example of molecular electronics

    Publication Year: 1983, Page(s):198 - 208
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1779 KB)

    Displays using electro-optical effects in liquid crystals are now well established and have permitted the manufacture of many new or improved products. This review examines the underlying physics and chemistry which underpins their use as molecular-electronics devices, describes how they operate and looks at a number of recent applications and possible future developments. View full abstract»

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  • Cell-based design: a review

    Publication Year: 1986, Page(s):77 - 82
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1017 KB)

    The paper discusses the impact of cell-based design techniques and VLSI technology. The paper considers cell-based chip design including the design tools and interfaces from logic design, through floor-planning to implementation. Finally, the advantages and limitations of cell-based design are summarised, leading to suggestions and recommendations for the next generation cell library approach. View full abstract»

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  • Layout related deformations of meander-type MOS transistor I/V characteristics

    Publication Year: 1985, Page(s):13 - 16
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (405 KB)

    The I/V characteristics of an n-channel silicon-gate folded MOS transistor, having a large value of gate width/length ratio, has been investigated. Significant deformations of these characteristics are reported and an explanation of the observed inconsistency with typical transistor models is proposed. View full abstract»

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  • Control of avalanche injection in bipolar transistors through the use of graded collector impurity profiles

    Publication Year: 1987, Page(s):141 - 147
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (778 KB)

    An analysis is presented to show that bipolar transistors can be made resistant to failure from avalanche injection (leading to current mode second breakdown) by incorporating an appropriately graded impurity profile within the collector. The improvement is achieved directly from an increase in the current density required to trigger the mechanism for any given collector-emitter voltage. This is i... View full abstract»

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  • Simulation and measurement of c/v doping profiles in multilayer structures

    Publication Year: 1983, Page(s):165 - 170
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (728 KB)

    C/V doping profiles are simulated through n-type multilayer structures containing heterojunctions. The perceived doping profile obtained from C/V measurements can differ markedly from the actual carrier profile in the vicinity of a hetero- or homojunction. The model is applied to conventional FET structures, high-electron-mobility transistors and superlattices. View full abstract»

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  • Behavioural description and VLSI verification

    Publication Year: 1986, Page(s):87 - 97
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1643 KB)

    Validation of VLSI design correctness by formal proof is an alternative to the traditional approach which utilises simulation. Formal verification requires the description of the behavior of designs and design specifications, resulting in the development of behavioural description languages. These differ from inherently structural hardware description languages (HDLs) in that they not only allow b... View full abstract»

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  • Performance evaluation of photovoltaic silicon cells under concentrated sunlight

    Publication Year: 1984, Page(s):66 - 72
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (668 KB)

    The electrical performance of concentrated photovoltaic Si cells has been studied underthe application of real sunlight. The photogenerated current increases linearly with cell temperature at a rate of 5 mA/°C, and it increases with the normal incident solar intensity. The difference between the cell temperature and the lowest cooler temperature increases sharply with incident solar intensity. Th... View full abstract»

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