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IEE Proceedings I - Solid-State and Electron Devices

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  • 1. Metal-semiconductor contacts

    Publication Year: 1982
    Cited by:  Papers (15)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2120 KB)

    A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions. View full abstract»

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  • 2. New hot-carrier injection and device degradation in submicron MOSFETs

    Publication Year: 1983, Page(s):144 - 150
    Cited by:  Papers (33)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (709 KB)

    New kinds of hot-carrier injection mechanisms, which are different from channel hot-electron and substrate hot-electron injection mechanisms already reported by Ning, et al., are presented. These are first drain avalanche hot-carrier (DAHC) injection and secondly substrate current induced hot-electron (SCHE) injection. DAHC injection is due to the emission of electrons and holes heated in the drai... View full abstract»

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  • 3. Hot-carrier effects in submicrometre MOS VLSIs

    Publication Year: 1984, Page(s):153 - 162
    Cited by:  Papers (27)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (770 KB)

    Hot-carrier effects in submicrometre MOS VLSI circuits are described in terms of (a) the hot-carrier injection mechanisms, (b) the device degradation, (c) the hot-carrier resistant device structures and (d) the hot-carrier phenomena under a bias of less than 3 V. Two significant hot-carrier injection mechanisms are proposed which are different from those of the channel hot-electron (CHE) and subst... View full abstract»

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  • 4. The Megacell concept: an approach to painless custom design

    Publication Year: 1985, Page(s):91 - 98
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1694 KB)

    Megacell is a complete design package for the creation of complex VLSI chips. It allows system engineers to develop their own custom integrated circuits. The challenge of Megacell was to create a design system that would exploit fully the low-power and high-speed performance of a UK developed 2 ¿m CMOS technology, while producing the silicon utilisation efficiency typical of full custom design. T... View full abstract»

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  • 5. Large-signal circuit model for simulation of injection-laser modulation dynamics

    Publication Year: 1981, Page(s):180 - 184
    Cited by:  Papers (43)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (602 KB)

    A new large-signal circuit model of a heterojunction injection laser is presented. The model includes the current/voltage characteristics of the semiconductor heterojunction and the electro-optical dynamics of the active layer. It enables the laser and its electrical drive circuit to be analysed in a unified manner. The model can be easily implemented on general-purpose nonlinear circuit analysis ... View full abstract»

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  • 6. Analytical modelling of depletion-mode MOSFET with short- and narrow-channel effects

    Publication Year: 1981, Page(s):225 - 238
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1445 KB)

    As we move into the VLSI era, many investigations have been performed on enhancement-mode MOS transistors, and the results have often been used for the depletion-mode device. In order to evaluate the differences from the usual enhancement-mode device, and to understand its own behaviour, we have first made an accurate modelling of a large and wide buried-channel device, assuming a step doping prof... View full abstract»

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  • 7. Direct-gap group IV semiconductors based on tin

    Publication Year: 1982, Page(s):189 - 192
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (697 KB)

    The MBE growth on InSb (and CdTe) of thin films of tin with diamond structure led to two unexpected findings: (i) photovoltaic behaviour suggesting an energy gap of 0.12eV, (ii) stabilisation of the diamond structure to about 70°C (compared with 13°C for bulk material). One explanation of semiconductivity is a strain-induced splitting of the Groves-Paul degeneracy which has been taken to confer ... View full abstract»

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  • 8. Measurement of threshold voltage and channel length of submicron MOSFETs

    Publication Year: 1988, Page(s):162 - 164
    Cited by:  Papers (18)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (339 KB)

    A simple method for characterisation of MOSFETs with appreciable source and drain series resistance is presented. The ratio g/g1/2m of conductance g and transconductance gm is shown to be a linear function of gate bias, whose intercept equals the threshold voltage and whose slope is proportional to the square root of the channel length. The method is illustrated using measurements on 0.4 ¿m to 1.... View full abstract»

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  • 9. Effects of dust on the performance of concentrator photovoltaic cells

    Publication Year: 1985, Page(s):5 - 8
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (439 KB)

    The effect of dust on the performance of photovoltaic concentrators has been investigated. The dust concentration in the air was measured continuously during the test period, and the rate of dust accumulation on the concentrator's surface was determined. For the purpose of comparison, an identical concentrator, the surface of which was kept clean, was evaluated simultaneously with the dusty concen... View full abstract»

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  • 10. High-precision MOS current mirror

    Publication Year: 1984, Page(s):170 - 175
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (462 KB)

    Matching accuracies of current mirrors using SIMOX technology are discussed. The variation in matching errors has been both qualitatively and quantitatively analysed for MOS current mirrors. Matching errors at low operating currents are dominated by variations in threshold voltage and are inversely proportional to the drain current. In high-current operations, however, they are not dependent on dr... View full abstract»

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  • 11. Longitudinal mode competition in semiconductor lasers: Rate equations revisited

    Publication Year: 1982, Page(s):271 - 274
    Cited by:  Papers (10)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (564 KB)

    Multimode rate equations have been used to investigate the response to a step current pulse of a semiconductor laser with built-in lateral waveguide. General expressions are given for the frequency and damping time of relaxation oscillations allowing for both gain and total spontaneous emission rate to have arbitrary dependences on carrier concentration. The exchange of power between dominant long... View full abstract»

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  • 12. Depletion mode MOSFET modelling for CAD

    Publication Year: 1983, Page(s):281 - 286
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (606 KB)

    A simple CAD model for the I/V characteristics of long-channel depletion-mode MOSFETs is presented. The model is applicable to both shallow and deep channel devices and provides a complete set of characterisation equations for eachmode of operation. The model also enhances qualitative understanding of the device behaviour and provides direct correlation between the electrical characteristics and t... View full abstract»

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  • 13. Comparison between two-dimensional short-channel MOSFET models

    Publication Year: 1983, Page(s):37 - 46
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1492 KB)

    The miniaturisation of MOSFETs in MOS LSI to achieve high packing density, high speed, low cost and an ultra high performance has led to the development of very-short-channel MOS devices. This has given rise to several important small-geometry effects on MOSFET characteristics which cannot be described by the conventional one-dimensional analysis. A comprehensive review is presented of the various... View full abstract»

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  • 14. Chemical-sensitive field-effect transistors

    Publication Year: 1983, Page(s):233 - 244
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1773 KB)

    The integration of various types of semiconductor devices with particular electrochemically active thin films makes possible a new generation of integrated-circuit chemical microtransducers which have many important (and unique) advantages over their conventional antecedents, including small size, robust solid-state nature and the potential for low-cost mass-fabrication; attributes which are parti... View full abstract»

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  • 15. Circuit model of double-heterojunction laser below threshold

    Publication Year: 1981, Page(s):101 - 106
    Cited by:  Papers (8)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (717 KB)

    A new circuit model of a stripe-geometry double-heterojunction injection laser below threshold is presented. The model is derived from the physics of the semiconductor heterojunction, and takes into account the effects of active-layer carrier degeneracy, high-level injection, and nonradiative recombination along the stripe edge. Turn-on delay characteristics and small-signal input resistance chara... View full abstract»

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  • 16. New amorphous-silicon electrically programmable nonvolatile switching device

    Publication Year: 1982, Page(s):51 - 54
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (536 KB)

    The paper reports preliminary data on the characteristics of a new electronic switching device based on amorphous silicon structures. The device is polar, and is switched from OFF to ON (WRITE) or ON to OFF (ERASE) by voltages opposite signs; the threshold voltage for the WRITE operation is 4 ¿8 V, depending on the device, and for ERASE it is ¿ 1 V. The OFF and ON resistances are typically l M¿... View full abstract»

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  • 17. First-order parameter extraction on enhancement silicon MOS transistors

    Publication Year: 1986, Page(s):49 - 54
    Cited by:  Papers (32)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (739 KB)

    A novel transformation technique has been devised which enables the rapid evaluation of the key MOS transistor parameters, threshold voltage, gain and mobility degradation factor without recourse to the inaccurate compromise approaches previously used. In the paper, the previous methods are reviewed to highlight the errors which can occur, and then the new technique detailed. Extensions to the tec... View full abstract»

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  • 18. An accurate and simple technique of determination of the maximum power point and measurement of some solar cell parameters

    Publication Year: 1985, Page(s):157 - 162
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (639 KB)

    An accurate method of determining the maximum power point (Vm, Im) of an energy conversion device like a solar cell, based on simple geometrical considerations, is given. Two additional checks on the correctness of the point are also possible by the method. The procedure holds irrespective of the values of parameters like the diode ideality factor (A), the series resistance (Rs) and the shunt resi... View full abstract»

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  • 19. Mott-barrier mixer diodes with improved semiconductor profiles for cooled operation at submillimetre wavelengths

    Publication Year: 1983, Page(s):171 - 174
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (345 KB)

    The use of thick, low-doped epitaxial profiles permits lower noise, lower capacitance Mott-barrier mixer diodes to be fabricated without complicating diode manufacturing technology. The paper reports model predictions for metal-GaAs diodes made from such materials. View full abstract»

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  • 20. A brief analysis of the transient forward voltage drop in fast diodes

    Publication Year: 1985, Page(s):277 - 280
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (422 KB)

    The transient forward voltage drop of fast diodes for medium power circuits is investigated using a computer model. Fast diodes, of both pn and PIN structures, are experimentally examined for a range of electrical and physical parameters. A multiple curvilinear statistical regression was used on the results and an empirical relationship is presented. View full abstract»

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  • 21. Surface field reduction for planar semiconductor devices using oxygen doped amorphous silicon

    Publication Year: 1987, Page(s):123 - 129
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (597 KB)

    A high breakdown voltage for a planar junction has been achieved by using a layer of oxygen doped amorphous silicon film over a composite of chemical-vapour deposition (CVD) phosphosilicate glass (PSG) film, CVD SiO2 film, and thermally oxidised SiO2. The high breakdown phenomenon was analysed from the viewpoint of surface depletion layer width. Measurements of the surface depletion layer width by... View full abstract»

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  • 22. Submicron MOS process with 10:1 optical-projection printing and anisotropic dry etching

    Publication Year: 1983, Page(s):136 - 143
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1242 KB)

    Results of an n-MOS process with minimum feature sizes in the submicron range are reported. Lithography is realised by 10:1 optical printing with step-and repeat exposure. Minimum linewidths of 0.7¿m have been achieved using a high numerical aperture projection optics with 0.42NA. In order to obtain high fidelity in pattern transfer, anisotropic dry-etching techniques have been used for all level... View full abstract»

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  • 23. High-injection open-circuit voltage decay in pn-junction diodes with lightly doped bases

    Publication Year: 1986, Page(s):181 - 184
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (560 KB)

    Results of experimental studies of open-circuit voltage decay (OCVD) in a high resistivity (3000 ¿ cm) base (i.e. lightly doped) pn-junction diode are reported. For moderate values of applied junction voltage, a rapid initial decay followed by a slow decay is observed. As the applied junction voltage increases to higher values, the initial drop becomes more rapid, it is followed by a plateau and ... View full abstract»

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  • 24. Sensor applications of thick-film technology

    Publication Year: 1988, Page(s):77 - 84
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1147 KB)

    The impact of thick-film technology on the development of new, inexpensive, robust and miniaturised sensors is discussed in the light of new designs and results by the authors and others. The three aspects covered are the realisation of electronic systems within sensors, the provision of support structures for sensor materials and the development of new primary sensors in the form of strain gauges... View full abstract»

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  • 25. Modern dispenser cathodes

    Publication Year: 1981, Page(s):19 - 32
    Cited by:  Papers (13)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1918 KB)

    The paper is a review of tungsten-base dispenser cathodes. Particular emphasis is placed on the many factors that contribute to the performance of a dispenser cathode. The review includes a history of the evolution of the modern dispenser cathode, fabrication techniques and their influence on cathode performance, state-of-the-art performance characteristics for various types of dispenser cathodes ... View full abstract»

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  • 26. Cell-based design: a review

    Publication Year: 1986, Page(s):77 - 82
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1017 KB)

    The paper discusses the impact of cell-based design techniques and VLSI technology. The paper considers cell-based chip design including the design tools and interfaces from logic design, through floor-planning to implementation. Finally, the advantages and limitations of cell-based design are summarised, leading to suggestions and recommendations for the next generation cell library approach. View full abstract»

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  • 27. Dynamic capacitance effects in DRAM word lines

    Publication Year: 1988, Page(s):1 - 6
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (760 KB)

    Examination of the total effective word line capacitance loading a DRAM word line driver reveals a dynamic effect which changes the capacitance relative to static computations. The magnitude of the `dynamic¿ capacitance can be significant when the rates of change of the storage node and word line voltage waveforms are comparable. The source of this effect is shown to be charge transfer between st... View full abstract»

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  • 28. Stability of Schottky barriers at high temperatures for use in GaAs MESFET technology

    Publication Year: 1986, Page(s):18 - 24
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (868 KB)

    The stability of Schottky barrier gates in GaAs MESFETS has been investigated to allow device processing at elevated temperatures. The incorporation of a Pt diffusion barrier into the TiAu structure gives stability of electrical characteristics up to 350°C and a Ti-W-Au contact is stable up to 400°C. To achieve higher temperature stability for use in a self aligned gate (SAG) technology, a more ... View full abstract»

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  • 29. Chemistry of polymeric resists useful in microlithography

    Publication Year: 1983, Page(s):245 - 251
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (868 KB)

    Polymer resists are indispensible to modern-day manufacture of integrated circuits and, to be effective, demand special combinations of many properties, such as sensitivity and resolution, for particular forms of radiation exposure, adhesion to semiconductor, metals and dielectric layers, resistance to plasma processing techniques and the ability to withstand appropriate thermal treatments. The na... View full abstract»

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  • 30. Alpha particle induced soft errors in NMOS RAMS: a review

    Publication Year: 1987, Page(s):32 - 44
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1843 KB)

    The paper aims to explain the alpha particle induced soft error phenomenon using the NMOS dynamic random access memory (RAM) as a model. It discusses some of the many techniques experimented with by manufacturers to overcome the problem, and gives a review of the literature covering most aspects of soft errors in dynamic RAMs. Finally, the soft error performance of current dynamic RAM and static R... View full abstract»

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  • 31. Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication

    Publication Year: 1981, Page(s):109 - 130
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (3010 KB)

    In the review the processes of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with detailed studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed in detail. View full abstract»

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  • 32. Anisotropic etching of silicon. a model diffusion-controlled reaction

    Publication Year: 1983, Page(s):49 - 56
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (873 KB)

    In conventional isotropic etching of metals, it has been found that narrower slots take longer to etch than wider ones. This has been attributed largely to the restricted access of fresh etchant to the metal surface. Spent etchant remains at the metal surface and forms a physical etch-retarding barrier. Anisotropic etching of single crystals differs from isotropic etching, in that it is orientatio... View full abstract»

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  • 33. Review of transducer applications of polyvinylidene fluoride

    Publication Year: 1983, Page(s):219 - 224
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (881 KB)

    In recent years, there has been considerable interest expressed in the polymer polyvinylidene fluoride, stemming largely from its piezoelectric and pyroelectric properties. The wide range of applications for this transducer material is reviewed, and a number of applications are described in greater detail, in particular for use as an acoustically transparent membrane hydrophone for transducer cali... View full abstract»

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  • 34. Measurement of interface state characteristics of MOS transistor utilising charge-pumping techniques

    Publication Year: 1981, Page(s):44 - 52
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (900 KB)

    The determination of both the energy and the spatial distribution of interface states of an MOS transistor utilising charge-pumping measurements is described. The energy distribution of interface states is determined by measuring the charge-pumping current as a function of gate bias at several temperatures. Although the energy profile obtained shows several maxima and minima, a gradual increase in... View full abstract»

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  • 35. Taper etching of the thermal oxide layer

    Publication Year: 1986, Page(s):13 - 17
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (632 KB)

    Controllable taper windows in thermally grown silicon dioxide layers are produced by depositing a thin layer of silicafilm on the thermal oxide layer before chemical etching. As the densification temperature of silicafilm is varied from 175°C to 1150°C, taper angles from 3° to 40° are obtained. Fermat' s principle of least time is employed to derive the expression for the etched profiles of th... View full abstract»

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  • 36. Influence of the preoxidation cleaning on the electrical properties of thin SIO2 layers

    Publication Year: 1988, Page(s):20 - 22
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (307 KB)

    The influence of a preoxidation cleaning procedure including an (HF + ethanol) step is investigated. It is shown that such a treatment gives a better thickness uniformity and improves the breakdown strength of silica layers. View full abstract»

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  • 37. Bumpless monotonic bicubic interpolation for MOSFET device modelling

    Publication Year: 1985, Page(s):147 - 150
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (459 KB)

    A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron a... View full abstract»

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  • 38. Novel p-n junction polysilicon dual-gate mosfet for analogue applications

    Publication Year: 1982, Page(s):58 - 60
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (318 KB)

    Fabrication details and experimental data are given for a dual-input-gate p-channel enhancementmode MOSFET, which can be used for analogue applications. The device employs a novel gate structure in which a single-level polysilicon gate is laterally segmented along the channel length by means of alternate p+ and n+ doping, thus considerably simplifying the technology. It is proposed that the outer ... View full abstract»

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  • 39. Depth inhomogeneity of CVD Si3N4 layers

    Publication Year: 1982, Page(s):103 - 104
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (267 KB)

    The potential distribution, the effective resistivity and the etch rate of the Si3 N4 layers have been studied as a function of the nitride thickness in bevelled etched MNOS structures. An unexpectedly high level of nonuniformity has been found in thin (< 70 nm) nitride layers. This level strongly depends on the annealing conditions and may be connected with the inhomogeneous depth distribution... View full abstract»

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  • 40. Conducting polymers

    Publication Year: 1983, Page(s):225 - 232
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1217 KB)

    A survey is presented of the progress made in recent years in the field of conducting polymers. This includes progress (i) on the experimental side (preparation, characterisation and doping, (ii) in the theoretical description of quasi-one-dimensional systems, (iii) in technological applications of linearly conjugated polymers. The advantages and disadvantages of each material are compared and con... View full abstract»

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  • 41. Distortion in CMOS operational amplifier circuits

    Publication Year: 1984, Page(s):129 - 134
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (815 KB)

    The paper presents a nonlinear distortion analysis of three basic CMOS inverter circuits, namely PMOS load, constant-current source load and push-pull inverter, and compares their performance experimentally. The analysis is based on a small-signal MOSFET model including the channel-length modulation effect. The theoretical predictions are compared with measurements made on inverters, and incorpora... View full abstract»

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  • 42. Low-voltage direct-current electroluminescence in ZnS: RE thin films

    Publication Year: 1983, Page(s):160 - 164
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (574 KB)

    Bright direct-current electroluminescence has been obtained in ZnS: Cu: CI: RE (rare earth) thin films with good maintenance characteristics and efficiency. Different rare-earth elements have been used as dopants, either singly or together, to give devices which exhibit various colour electroluminescence. Brightness/voltage curves were measured as a function of device temperature, and electrolumin... View full abstract»

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  • 43. A 3.5 GHz self-aligned single-clocked binary frequency divider on GaAs

    Publication Year: 1980, Page(s):270 - 277
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (854 KB)

    A fully planar self-aligned technology has been ultilised to fabricate a monolithic single-clocked binary frequency divider consisting of a gated master/slave flip-flop and a complementary clock-pulse generator to drive it. An optimised version of the gated m.s. flip-flop is presented along with the m. e.s.f.e.t.model used for the simulations. Correct counting from d.c. up to 5.5 GHz for the gated... View full abstract»

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  • 44. Microwave switching performance of high -speed optoelectronic switches: An efficiency comparison of the basic types

    Publication Year: 1981, Page(s):193 - 196
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (459 KB)

    Presently, four basic types of optoelectronic switches are known to be successfully applicable for high-speed optoelectronic microwave switching. A comparison of these devices in terms of maximum power transmission coefficient as a function of optical wavelength is reported. It is found that the substrate edge excitation method offers the highest overall efficiency, and is, therefore, especially p... View full abstract»

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  • 45. High-voltage device termination techniques a comparative review

    Publication Year: 1982, Page(s):173 - 179
    Cited by:  Papers (14)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (912 KB)

    High-voltage power device performance is often limited by the ability to approach nearly ideal behaviour at the edges of the chip. Consequently, a large number of termination techniques have been explored to reduce the surface electric field at the edges of devices, and so to maximise the breakdown voltage. The paper provides a review of these techniques. A comparison between the various approache... View full abstract»

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  • 46. Leaky modes in active three-layer slab waveguides

    Publication Year: 1980, Page(s):330 - 336
    Cited by:  Papers (16)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (717 KB)

    We present a comprehensive numerical mode calculation based on a phenomenological theory for a three-layer slab waveguide with a refractive-index depression but finite gain in the centre region (leaky modes). The leaking rays and the refraction loss of the modes are discussed as well as their influence on the threshold conditions for typical stripe-geometry laser structures. Special attention is p... View full abstract»

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  • 47. Power MOSFET dynamic large-signal model

    Publication Year: 1983, Page(s):73 - 79
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (904 KB)

    A large-signal dynamic circuit model for the double-diffused vertical power MOSFET is reported. The model is physically based and its parameters are readily determined from static curve tracer measurements and small-signal measurements using simple data-reduction techniques. The equivalent circuit can be implemented in general purpose nonlinear circuit analysis computer programs, such as SPICE 2, ... View full abstract»

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  • 48. GaAs n+ ip+ in+ barrier transistor with ultra-thin p+AlGaAs base prepared by molecular beam epitaxy

    Publication Year: 1986, Page(s):47 - 48
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (301 KB)

    A GaAs n+ ip+ in+ bulk barrier transistor with an ultra-thin p+Al0.2Ga0.8 As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the ΔEc for the conduction band barrier and by the ΔEv for the valence band barrier, in addition to the pl... View full abstract»

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  • 49. CMOS mobility degradation coefficients at low temperatures

    Publication Year: 1988, Page(s):17 - 19
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (321 KB)

    An AC measurement technique is applied to NMOS and PMOS devices fabricated using a 1.25 ¿m CMOS process. The parasitic resistance and mobility degradation coefficients have been extracted for temperatures between 25 K and 300 K. The NMOS parasitic resistance stays flat with temperature while the PMOS resistance rises sharply below 200 K, probably due to the light source/drain diffusion doping. Th... View full abstract»

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  • 50. Bulk unipolar diodes in the limit of large p-region widths

    Publication Year: 1987, Page(s):17 - 22
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (837 KB)

    A unified quantitative theory is developed to analyse the electrical properties of bulk unipolar diodes. This theory is also able to account for the transition between the limiting cases of p-plane barrier devices, camel diodes and the conventional bipolar devices. The effect of the minority-carrier charges and currents on the various performances of the devices is included in the theory. The vali... View full abstract»

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