Electron Devices, IEEE Transactions on
Issue 9 • Date Sept. 1995
Society Sponsor
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Displaying Results 1 - 25 of 26
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Simulation, fabrication and characterization of a novel P-I-N-drain MOSFET structure for hot carrier suppression
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PDF (748 KB)
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Threshold voltage sensitivity of 0.1 μm channel length fully-depleted SOI NMOSFET's with back-gate bias
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PDF (264 KB)
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Influence of impact-ionization-induced base current reversal on bipolar transistor parameters
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PDF (1048 KB)
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Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery
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PDF (520 KB)
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Sub-1/4-μm dual-gate CMOS technology using in-situ doped polysilicon for nMOS and pMOS gates
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PDF (680 KB)
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Application-oriented 33 GHz E/D-PMODFET static prescaler fabricated using optical lithography
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PDF (352 KB)
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Microwave triode amplifiers from 1 to 2 GHz using molybdenum thin-film-field-emission cathode devices
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PDF (648 KB)
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An improved multipeak resonant tunneling diode model for nine-state resonant tunneling diode memory circuit simulation
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PDF (256 KB)
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Novel high-gain, improved-bandwidth, finned-ladder V-band traveling-wave tube slow-wave circuit design
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PDF (496 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
