By Topic

Selected Topics in Quantum Electronics, IEEE Journal of

Issue 2 • Date Jun 1995

Filter Results

Displaying Results 1 - 25 of 82
  • Distributed forward coupled (DFC) laser

    Page(s): 387 - 395
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (720 KB)  

    The device structure and the operation principle of the distributed forward coupled (DPC) laser are presented. In this laser, periodic absorption losses induce the codirectional coupling of the two forward propagating modes in a twin-waveguide structure. Exploiting the strong dependence of the coupling wavelength on the effective index difference of the two modes enables the wide wavelength tuning of these devices by only one wavelength control current. In close analogy with the contradirectionally coupled DFB and DBR laser structures, the DFC laser corresponds to the DFB laser, while the previous types of codirectionally coupled tunable lasers more resemble the DBR type devices. Accordingly, the homogeneous distribution of the forward coupling along the entire cavity length yields optimum wavelength selectivity and side mode suppression, as compared with the previous approaches. Theoretically, well-designed 600-μm long InGaAsP-InP DFC lasers, operating at 1.5-μm wavelength, yield tuning ranges up to 100 nm and side mode suppression ratios up to 30 dB View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Determination of the band structure of disordered AlGaInP and its influence on visible-laser characteristics

    Page(s): 697 - 706
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (828 KB)  

    Using hydrostatic pressure techniques, we have obtained new energies for the X-minima, L-minima and band offsets in GaInP-AlGaInP. Theoretical calculations of the threshold current density in bulk and strained quantum-well visible lasers are shown to be in good agreement with experimental results, obtained as a function of both temperature and hydrostatic pressure. Our results show that heterobarrier leakage current is a dominant limiting factor in the performance at shorter wavelength (~635 nm) operation, but is of less significance for longer wavelength (~675 nm) operation View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Subnanosecond tunable distributed Bragg reflector lasers with an electrooptical Bragg section

    Page(s): 396 - 400
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (416 KB)  

    For the first time, a DBR laser with an electrooptical Bragg section is reported for fast wavelength tuning operation. This structure is based on the photonic integration of a Fabry-Perot buried ridge stripe laser with a ridge waveguide modulator in which the grating is etched. By proper structure design and adjustment of the Franz-Keldysh quaternary gap used in the Bragg section, a 2.5-nm tuning range with six distinct modes is obtained for a -4 V voltage applied to the Bragg section. Under this tuning, the optical-output power variation is limited to 2.5 dB for a 370-μm DBR length. Using this concept, we measured the best switching time between different wavelength channels ever reported on DBR lasers, on this device: 500 ps independently of the wavelength shift View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A time-domain model for high-speed quantum-well lasers including carrier transport effects

    Page(s): 494 - 504
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (944 KB)  

    Carrier transport plays an important role and can significantly affect the ultra-fast properties of quantum-well (QW) lasers. We present a detailed multi-mode time-domain large-signal dynamic model including the effects of carrier transport, suitable for the high-speed QW lasers. It is based on the well-proven transmission-line laser modelling technique with the addition of a multilevel system of coupled rate equations. Simulated results from studies of both the static and small-signal properties are compared with measurements from another laboratory. Our model can accurately predict the modulation-bandwidth discontinuity in QW laser structures with large separate-confinement-heterostructure (SCH) regions. We use large-signal simulations to predict increased damping of transient responses and larger turn-on delays caused by the effects of carrier transport. Our large-signal simulations also show that an increase in the turn-on delay times is expected in QW structures with large carrier transport times across the SCH region, whereas the inter-well transport times do not affect the turn-on delay times significantly View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates

    Page(s): 196 - 202
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (652 KB)  

    High performance buried heterostructure InGaAs-GaAs-AlGaAs quantum-well lasers and laser arrays with tight spatial confinement of the electrical current and the optical fields have been fabricated by metalorganic chemical vapor deposition. The lasers ace fabricated in a single growth step, using nonplanar substrates as a template for the active region definition. CW room temperature threshold currents, as low as 0.5 mA and 0.6 mA, are obtained for as-cleaved double and single quantum-well lasers, respectively. External quantum efficiencies exceeding 80% are obtained in the same devices. High-reflectivity facet-coated lasers have room temperature CW threshold currents as low as 0.145 mA with 10% external quantum efficiency. Lasers made by this technique have high yield and uniformity, and are suitable for low threshold array applications View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High-power broad-area tapered amplifier with a monolithically integrated output focusing lens at 0.98-μm wavelength

    Page(s): 165 - 172
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (668 KB)  

    We have demonstrated a 0.98-μm wavelength tapered broad-area amplifier with a monolithically integrated aspherical waveguide lens. CW output exceeding 1 W from the amplifier-lens chip was measured with 10 mW input from a 0.98-μm diode laser. The integrated semiconductor waveguide lens focused the amplifier output to a 8 μm×3 μm spot, which was measured at output power up to about 0.5 W, corresponding to 2.5 times the diffraction limit The beam propagation method was used to model the integrated amplifier-lens chip, and the calculated focal distances agree with the experiment to within 5%. The integrated lens may be used for output coupling to a single mode fiber with the requirement that the focal point should be positioned on the output facet. Based on BPM simulation, however, the focal point position becomes uncritical if a single mode output waveguide is integrated. Our results indicate that the waveguiding lens is a useful component for the design of high-power photonic integrated circuits View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

    Page(s): 244 - 249
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (476 KB)  

    We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T 0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Ultralow threshold 1.3-μm InGaAsP-InP compressive-strained multiquantum-well monolithic laser array for parallel high-density optical interconnects

    Page(s): 203 - 210
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (640 KB)  

    An ultralow-threshold 1.3-μm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active laser width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3±0.09 mA and slope efficiency of 0.37±0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20°C and 1.62 mA at 90°C, as a long-wavelength laser, is obtained by employing a short cavity (100 μm) uith high-reflection coatings View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-gain bandwidth

    Page(s): 654 - 660
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (552 KB)  

    Temperature-insensitive characteristics are of great importance in implementing the actual applications of vertical-cavity surface-emitting lasers (VCSEL's) because of the temperature change in the surroundings. To extend the operational temperature range of such lasers, we fabricated a VCSEL with a broad gain bandwidth. The active layers in VCSEL's consist of multiple quantum wells (MQW's) with different bandgap energies. From the change in the threshold current, with temperature as a parameter, we found that the operational temperature range of a VCSEL with a broad gain bandwidth is more than 20°C wider than that of conventional VCSEL's, whose active layers consist of a single type of MQW. We demonstrate that the extended-gain bandwidth gives better temperature characteristics. In addition, we simulated the structure of the active layers, and the optimized structure resulted in a 1-mW light output power at less than 5 mA in a single transverse mode oscillation from 20-70°C View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Minimization of threshold current in short wavelength AlGaInP vertical-cavity surface-emitting lasers

    Page(s): 649 - 653
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (432 KB)  

    This paper investigates the interdependence of wavelength and threshold current in an AlGaInP vertical-cavity surface-emitting laser with an emphasis on optimizing the performance of shorter wavelength lasers. We apply a model which includes bandstructure, band-filling and many body effects in a consistent manner, as well as leakage current effects, to evaluate the effect of strain and quantum confinement on threshold current. We find that leakage current becomes increasingly important for shorter wavelength devices, comprising more than half of the total current for a laser emitting at 620 nm. The reduction of threshold current with increasing compressive strain is clearly demonstrated and the dependence of threshold current density on quantum well width is found to be greater for shorter wavelength lasers View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Fundamental-transverse-mode high-power AlGaInP laser diode with windows grown on facets

    Page(s): 728 - 733
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (468 KB)  

    The window-grown-on-facet (WGF) structure was first implemented to high power fundamental-transverse-mode AlGaInP lasers so as to reduce facet degradation. A kink-free CW maximum output power of 295 mW, about twice as much as for an identical non-WGF laser, was achieved at the wavelength of 680 mm; and fundamental-transverse-mode operation up to 150 mW was confirmed. Front and rear window layers are undoped (Al0.7Ga0.3)0.5In0.5P grown by MOCVD, while the internal laser was grown by solid-source MBE. The effect of the regrowth of the window layer was evaluated by time-resolved photoluminescence, and a threefold improvement in photoluminescence decay time was observed View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • InAs-InAsxSb1-x type-II superlattice midwave infrared lasers grown on InAs substrates

    Page(s): 749 - 756
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (656 KB)  

    This paper reports a detailed study of InAs-InAsxSb1-x type-II superlattice (SL) midwave infrared laser structures, in which the band-to-band radiative transitions are spatially indirect, from extended electron states in the conduction band to relatively localized heavy-hole states in the valence band. Due to the large valence band offset between InSb and InAs, the effective bandgap of InAs-InAsxSb1-x type-II SL can cover a broad infrared wavelength range, from 3.0 μm to far infrared (>10 μm). Under CW optical pumping, stimulated light emission is observed from laser structures consisting of InAs-InAsx Sb1-x type-II SL active regions capped by AlAs0.16 Sb0.84 cladding layers. The operating wavelengths are around 3.4 μm, which is in good agreement with theoretical modeling. The overlap between electron and hole wavefunctions along the growth direction is calculated to be 0.89. Equivalent CW threshold current densities are 3.3 A/cm2 and 56 A/cm2 at sample temperatures of 5 K and 95 K, respectively. The corresponding characteristic temperature (T0) is 32 K. These results demonstrate that the InAs-InAsxSb1-x type-II SL is a very promising candidate material for midwave infrared semiconductor lasers View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Polarization control of vertical-cavity surface-emitting lasers through use of an anisotropic gain distribution in [110]-oriented strained quantum-well structures

    Page(s): 674 - 680
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (592 KB)  

    An analysis of the in-plane optical matrix elements connected with the gain distribution of (In,Ga)As-GaAs quantum-well structures on (110) GaAs substrates is presented. The in-plane gain distribution is found to be anisotropic-with a maximum directed along the [1¯10]-[11¯0] crystallographic axis. Optically-pumped vertical-cavity surface-emitting lasers on the (110) surface with these quantum wells in the cavity exhibit stable, well-defined polarization states; this stability is believed to be a consequence of the predicted anisotropic gain distribution on the (110) surface. Of the two orthogonal eigen polarizations observed, the one with the higher optical intensity, for a given pump power, was found to be stabilized along the [1¯10] crystallographic axis; this is in agreement with the analysis View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror

    Page(s): 293 - 300
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (652 KB)  

    A very high characteristic temperature T0 of 150 K (25-70°C) or 450 K (25-50°C) and an almost constant differential quantum efficiency operation in the temperature range of 25-70°C were achieved in 1.3-μm GaInAsP-InP strained-layer quantum-well (SL-QW) lasers by use of a novel temperature dependent reflectivity (TDR) mirror composed of multiple quarter-lambda thickness α-Si-SiOx dielectric films with quarter-lambda shift in the vicinity of center portion, The mechanism of high T0 and constant differential quantum efficiency were explained using the structural parameters, transparent current density and gain coefficient of a SL-QW laser that are derived experimentally. The effect of TDR mirror was confirmed by measuring the temperature dependence of net gain of a SL-QW laser with TDR mirror. It was found that less temperature dependent net gain due to the decrease of mirror loss with temperature played an important role for improving the temperature characteristics of threshold current. Almost constant differential quantum efficiency over a wide temperature range is attributed to the increase of the facet reflectivity with temperature View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 1.5-μm DFB lasers with new current-induced gain gratings

    Page(s): 371 - 374
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (324 KB)  

    We introduce a new concept for gratings, based on a spatial carrier modulation, induced by current for optoelectronic devices. The concept is experimentally tested on gain coupled lasers, showing predicted features as high-power, low-linewidth, and length-independent coupling length product View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis of gain in determining T0 in 1.3 μm semiconductor lasers

    Page(s): 250 - 263
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1204 KB)  

    Rapid decrease of differential gain has been determined to dominate the temperature dependence of threshold current in 1.3-μm multiquantum well and bulk active lasers giving rise to low values of T 0. Extensive experimental characterization of each type of device is described. Results are presented for the dependence of gain on chemical potential and carrier density as a function of temperature. The data indicate the important role of the temperature-insensitive, carrier density dependent chemical potential in determining differential gain. Modeling of the temperature dependence of threshold carrier density in MQW and bulk active lasers based on a detailed band theory calculation is described. The calculated value of T0 depends on the structure of the active layer, e.g., multiquantum well versus bulk. However, the calculated values are substantially higher than measured View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis on wide continuous wavelength tuning of rapid-tunable quantum-well DFB lasers with carrier-transport effects

    Page(s): 427 - 432
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (444 KB)  

    The authors report, theoretically, the wide and rapid tuning characteristics of the enhanced-plasma effect (EPE) laser. The EPE laser is a novel wavelength tunable laser. It has a thick carrier reservoir between the p-cladding layer and the MQW active layer. Fast blue-frequency shifting, due to the plasma effect, is strikingly enhanced and exceeds the slow red-thermal-frequency drift. Continuous-wave tuning range is analyzed in consideration of the carrier transport time, the carrier lifetime in the reservoir, and heat generation owing to nonradiative recombination current. Wide continuous rapid tuning characteristics are demonstrated, theoretically. Over 10-nm continuous and rapid tuning range would he obtained by using an EPE structure View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Single-mode, passive antiguide vertical cavity surface emitting laser

    Page(s): 629 - 637
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (716 KB)  

    We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE) for the regrowth of the PAR structure. The novel passive antiguide region surrounding the active region is demonstrated to be a highly effective transverse mode and polarization mode selection mechanism. A stable single fundamental mode at high currents has been achieved experimentally for laser aperture as large as 16 μm diameter, In addition, very low threshold current of 0.8 mA and current density of 490 A/cm2 are achieved with 8 and 32 μm diameter VCSEL's, respectively. A detailed numerical two- and three-dimensionaI analysis was performed using the beam propagation method. The modal losses were calculated as a function of the cladding refractive index and the laser size. Quantitative results leading to approximate formulae have been achieved. The high mode selectivity obtained from the numerical analysis is in good agreement with the experimental results we have achieved View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • II-VI blue-green laser diodes

    Page(s): 741 - 748
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (760 KB)  

    ZnMgSSe, forming a type I heterostructure with Zn(Cd)Se, fully lattice-matched to GaAs with an energy gap tunable up to ~4.5 eV, has made possible continuous-wave (CW) operation of both a green laser diode (LD) and a blue LD at room temperature. The device characteristics of the II-VI wide-gap LD's are becoming as good as those of established III-V LD's, except for device lifetime. Remaining key issues are p-doping in the wide-gap ZnMgSSe and reliability of II-VI wide gap LD's. Valence-band engineering via superlattice (SL) use is proposed, based on the amphoteric defect model, for removing the doping limit in the p-type ZnMgSSe. This will lead to CW operation of a blue-emitting laser diode with a wavelength of 450 ~ 460 mm. For reliability, employing a GaAs-buffer layer has made possible room-temperature (RT) CW operation with a lifetime of 1 hour. Analysis of the degradation process shows that no catastrophically fast degradation occurs when II-VI LD's degrade. The reliability of the ZnMgSSe-based LD's would soon be established, and the II-VI wide-gap LD's will likely blossom colorfully in the near future View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Distributed feedback lasers with an S-bent waveguide for high-power single-mode operation

    Page(s): 346 - 355
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (872 KB)  

    DFB lasers with variations in the Bragg wavenumber along the cavity (corrugation-pitch modulation) can be designed to operate in a single mode up to high output powers. Practical implementation of various pitch-modulated DFB cavities is facilitated by bending the laser waveguide over a uniform grating, so that the Bragg wavenumber is varied along the cavity. In this paper, above-threshold behavior of such lasers is studied, and design rules for high power single-mode operation are developed. S-bent waveguide DFB lasers, fabricated according to our design criteria, exhibit single-mode operation with 40 dB side mode suppression ratio from threshold to 10×Ith View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes

    Page(s): 234 - 243
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (892 KB)  

    Temperature dependent efficiency and modulation characteristics of strained quantum-well (QW) InGaAs-InGaAsP-InGaP 980-nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The decrease of the differential efficiency of 980-nm laser diodes with temperature is found to be caused by an increased modal loss attributed to the free carrier (electron and hole) absorption. The obtained results agree well with experimentally observed increase of internal loss at higher temperatures. Modulation characteristics are determined mainly by drift-diffusion in separate confinement region along with processes of carrier capture and escape in QWs. At high temperatures modulation bandwidth is reduced because of the decrease in differential gain. Graded index separate confinement heterostructure and multi-QW lasers show superior efficiency and modulation behavior at high temperatures View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Mechanism of wavelength tuning and frequency modulation in three-electrode DFB lasers

    Page(s): 416 - 426
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (892 KB)  

    The static and dynamic characteristics of three-electrode DFB lasers are investigated. In wavelength tuning, the side sections determine the effective Bragg wavelength, while the center section acts as the active phase shifter. A continuous tuning with a wide range of 5 nm is demonstrated utilizing a requisite thermal contribution to the extension of the effective Bragg wavelength shift. The direction of the frequency shift in carrier-induced frequency modulation (FM) can be described by a single parameter-the phase shift in the center section. It is also pointed out that a wide FM bandwidth exceeding 10 GHz can be obtained for red-shifted cases, despite the modulation bandwidth of the carrier density being limited by the carrier lifetime. The interpretation presented in this paper makes the operating mechanism clearly understandable for practical use View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Sisyphus effect in semiconductor lasers with optical feedback

    Page(s): 466 - 472
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (656 KB)  

    We identify the various physical mechanisms in low frequency fluctuations, which occur when a semiconductor laser is subject to moderate optical feedback while operating close to its solitary laser threshold. In attempting to reach the maximum gain mode, which often is stable, the system forms short mode-locked pulses. In between pulses mode-slipping can occur, generally in the direction of maximum gain. Inevitably, the trajectory passes too close to one of the many saddle points, which will take the system back to the solitary laser state View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Gain-dependent polarization properties of vertical-cavity lasers

    Page(s): 661 - 666
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (516 KB)  

    We show that the partitioning of power into the two orthogonal eigen polarizations of infra-red gain-guided vertical cavity lasers depends upon the relative spectral overlap of the nondegenerate polarization cavity resonances with the laser gain spectrum. Furthermore, at the condition where the polarization resonances and the peak laser gain are aligned, abrupt switching of power between the eigen polarizations is observed as the gain sweeps through the polarization resonances. The gain-dependence of the polarization requires spectral splitting between the eigen polarizations, which is found to be strongly influenced by local strain. The polarization of the fundamental and higher-order spatial modes can be selected and maintained for all InGaAs vertical-cavity lasers in a wafer simply by employing a 20 nm or greater blue-shift offset of the peak laser gain relative to the cavity resonances View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • External optical feedback phenomena in semiconductor lasers

    Page(s): 480 - 489
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (844 KB)  

    The phenomena occurring in semiconductor lasers due to weak external optical feedback are reviewed, including mode hopping and related mode-hopping noise, linewidth narrowing and broadening, and the transition to the coherence collapse regime. Guidelines are given for designing semiconductor lasers, both edge emitters and VCSEL's, with high endurance against external optical feedback View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
John Cartledge
Queen's University