Issue 3 • Date March 1995
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Displaying Results 1 - 13 of 13
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A scaled, high-performance (4.5 fJ) bipolar device in a 0.35 μm high-density BiCMOS SRAM technology
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PDF (251 KB)
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A measurement method of the injection dependence of the conductivity mobility in silicon
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PDF (285 KB)
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Low frequency gate current noise in high electron mobility transistors: experimental analysis
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PDF (267 KB)
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Enhancement mode InP MISFET's with sulfide passivation and photo-CVD grown P3N5 gate insulators
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PDF (309 KB)
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A novel /spl delta/-doped GaAs/lnGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability
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PDF (326 KB)
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A new three-terminal switching device
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PDF (252 KB)
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2-D dopant profiling in VLSI devices using dopant-selective etching: an atomic force microscopy study
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PDF (297 KB)
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Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


