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Electron Device Letters, IEEE

Issue 1 • Date Jan. 1995

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Displaying Results 1 - 12 of 12
  • Pulse-doped diamond p-channel metal semiconductor field-effect transistor

    Publication Year: 1995 , Page(s): 36 - 38
    Cited by:  Papers (9)  |  Patents (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (265 KB)  

    A p-type diamond metal semiconductor field-effect transistor (MESFET) structure, utilizing a boron pulse-doped layer as the conducting channel, has been successfully fabricated. The pulse-doped structure consists of an undoped diamond buffer layer, a highly doped thin diamond active layer, and an undoped diamond cap layer grown by the microwave plasma assisted chemical vapor deposition method. It is shown that this field-effect transistor with a gate length of 4 μm and the gate width of 39 μm exhibits an extrinsic transconductance of 116 μS/mm with both pinch-off characteristics and current saturation. View full abstract»

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  • Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs

    Publication Year: 1995 , Page(s): 33 - 35
    Cited by:  Papers (15)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (256 KB)  

    The linearities of pseudomorphic heterostructure Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As doped-channel FETs (DCFETs) and HEMTs were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.<> View full abstract»

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  • Recess dependent breakdown behavior of GaAs-HFETs

    Publication Year: 1995 , Page(s): 30 - 32
    Cited by:  Papers (5)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (223 KB)  

    GaAs based HEMT devices were fabricated with a constant recess towards the source, whereas the recess width towards the drain was varied. While the off-state breakdown voltage has been improved by the use of a wide recess towards the drain, no dependence of the on-state breakdown on the recess configuration was observed. The constant breakdown voltage in the on-state is analysed by the feedback parameters obtained from an extraction of the small signal equivalent circuit. Although the extrinsic gate drain capacitance could be reduced by the use of a wider recess configuration, it is assumed that the intrinsic drift region is independent of the recess configuration.<> View full abstract»

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  • Formulation of a tail electron hydrodynamic model based on Monte Carlo results

    Publication Year: 1995 , Page(s): 26 - 29
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (351 KB)  

    In this paper, the Monte Carlo method is applied to uniform and n/sup +/-n/sup -/-n/sup +/ structures of silicon to study the behavior of tail electrons and to develop a new set of hydrodynamic equations based on tail electron statistics. Each term in these equations is calibrated under both nonhomogeneous and homogeneous electric fields. Terms associated with surface integral of the carriers and carrier momentum over an iso energy surface: (/spl Escr/=/spl Escr//sub th/) are introduced. The new tail electron hydrodynamic model yields the density (n/sub 2/) and the average energy (w/sub 2/) of tail electrons and is shown to predict hot electron effects accurately.<> View full abstract»

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  • The effects of electrochemically-induced etching non-uniformities on microwave field effect transistors

    Publication Year: 1995 , Page(s): 23 - 25
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (296 KB)  

    For the first time, direct experimental evidence of the electrochemical etching component, associated with wet chemical etching of semiconductor devices, is shown to produce significant non-uniformities in device (e.g. material) characteristics. Furthermore, it is shown that these electrochemically-induced non-uniformities (within the device itself) can significantly reduce RF performance of power microwave devices. Comparative microwave measurements between discrete power devices that had, or did not have, electrochemically-induced non-uniformities, clearly demonstrated marked differences in device power-added efficiency (PAE).<> View full abstract»

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  • A high-gain, modulation-doped photodetector using low-temperature MBE-grown GaAs

    Publication Year: 1995 , Page(s): 20 - 22
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (293 KB)  

    We report the fabrication and performance of a novel, high gain photodetector. Basically, the device is a modulation-doped field effect transistor (MODFET) structure with its channel region made of low-temperature MBE-grown GaAs. It exhibits an excellent responsivity of 65 A/W at /spl sim/0.87 μm and 6.5 A/W at /spl perp/1.0 μm. In the sub-bandgap range (0.9-1.3 μm) the responsivity of this device is the highest ever reported, to our knowledge, for any GaAs-based device. Thus, the device appears to be ideally suited for applications requiring a high photodetection sensitivity, especially in the 1.3 μm wavelength region. Charge separation by the built-in field normal to the heterojunction plane is attributed to be responsible for the gain in the device. View full abstract»

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  • The extraction of two-dimensional MOS transistor doping via inverse modeling

    Publication Year: 1995 , Page(s): 17 - 19
    Cited by:  Papers (9)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (317 KB)  

    We present a novel method for the determination of the two-dimensional (2D) doping profile of a MOSFET using inverse modeling. In our method, the logarithms of the donors and accepters concentrations are each represented by a tensor product spline (TPS). The TPS coefficients are extracted by nonlinear, least squares optimization from source/drain (S/D) diode and gate capacitance data. After validating the method by applying it to simulated capacitance data, we present the results of using the new technique to extract the 2D profile of a 0.42 μm gate length CMOS technology N-channel device. View full abstract»

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  • Formation and control of boron buried layers in silicon using an excimer laser

    Publication Year: 1995 , Page(s): 14 - 16
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (332 KB)  

    Buried layers have been shown to enhance performance of Si MOSFETs in the deep submicrometer regime. Epitaxial growth methods such as atomic layer doping or ion implantation are currently used for the formation of such doping profiles. In this work, we propose an alternative approach, using a XeCl (/spl lambda/=308 mn) pulsed excimer laser, for the fabrication of pulse-shaped B profiles in Si. This process affords simplicity, versatility, and independent control over the depth, width, and the height of the B buried layer.<> View full abstract»

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  • SOI/bulk hybrid technology on SIMOX wafers for high performance circuits with good ESD immunity

    Publication Year: 1995 , Page(s): 11 - 13
    Cited by:  Papers (3)  |  Patents (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (305 KB)  

    A new SOI/bulk hybrid technology with devices on both the thin film and the bottom substrate of SIMOX wafers has been studied. By fabricating ESD protection circuits on the substrate of SIMOX wafers, ESD reliability of high performance CMOS SOI circuits can be significantly improved. Despite the higher surface defect density and micro-roughness on the bottom substrate of SIMOX wafers compared to ordinary bulk wafers, similar electron mobility, intrinsic thermal oxide properties and hot-carrier degradation are observed among MOSFET's fabricated on the different substrates. Thus, the hybrid technology is capable of combining the advantages both of SOI and bulk technology in fabricating high performance circuits.<> View full abstract»

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  • Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current

    Publication Year: 1995 , Page(s): 8 - 10
    Cited by:  Papers (4)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (284 KB)  

    We report an electrical characterisation of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the DC gain versus temperature and perimeter to area ratio indicates that emitter edge current has a major influence on the NDR magnitude.<> View full abstract»

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  • Dual lateral channel emitter switched thyristor characteristics: dependence on floating emitter length

    Publication Year: 1995 , Page(s): 5 - 7
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (279 KB)  

    In this work, we have examined the forward drop and maximum controllable current of the dual lateral channel emitter switched thyristor as a function of floating emitter length. It is found that the forward drop at lower current densities decreases with increasing floating emitter length, but the trend is reversed at higher current densities. The maximum controllable current is found to decrease with increasing emitter length, and increase with applied negative gate bias. This indicates that turn-off is primarily accomplished by the p-channel MOSFET inherent in the structure. These trends have been verified experimentally on 600-V devices.<> View full abstract»

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  • Grounded body SOI(GBSOI) nMOSFET by wafer bonding

    Publication Year: 1995 , Page(s): 2 - 4
    Cited by:  Papers (5)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (279 KB)  

    We have fabricated a grounded body silicon-on-insulator (GBSOI) nMOSFET by wafer bonding and etch back technology. The GBSOI has all the inherent advantages of SOI such as speed and radiation hardness, while such problems as the low breakdown voltage and kink effect are completely solved due to the p/sup +/ polysilicon grounded body. It also has high packing density because several SOI bodies and the ground line are connected via the p/sup +/ polysilicon layer buried under the channel region.<> View full abstract»

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