# IEEE Transactions on Electron Devices

## Issue 7 • July 2017

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## Filter Results

Displaying Results 1 - 25 of 44

Publication Year: 2017, Page(s):C1 - 2774
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2017, Page(s): C2
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• ### Physical Models of Planar Spiral Inductor Integrated on the High-Resistivity and Trap-Rich Silicon-on-Insulator Substrates

Publication Year: 2017, Page(s):2775 - 2781
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High-resistivity(HR) silicon-on-insulator(SOI) substrates provide low substrate loss, so planar spiral inductors integrated on them presenting higher quality factor (Q) than those on traditional Si substrates. However, the parasitic surface conduction (PSC) effect in the SOI substrate constitutes a conductive layer underneath the buried oxide layer, which deteriorates the inductors performance. Th... View full abstract»

• ### A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C

Publication Year: 2017, Page(s):2782 - 2788
Cited by:  Papers (1)
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This paper presents the first fully integrated sigma-delta modulator implemented in an in-house silicon carbide (SiC) bipolar technology for high-temperature applications. A second-order 1-b continuous-time architecture is adopted. Dual-loop compensation technique is employed to accommodate one clock period comparator delay. The circuits are designed to have enough margins without degrading the mo... View full abstract»

Publication Year: 2017, Page(s):2789 - 2796
Cited by:  Papers (1)
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In this paper, we present a novel method to reduce the subthreshold swing (SS) of FETs below 60 mV/decade. Through modeling, we directly relate trap charge movement between the gate electrode and the gate dielectric to SS reduction. We experimentally investigate the impact of charge exchange between a Cu gate electrode and a 5-nm-thick amorphous Al2O3 gate dielectric in an In... View full abstract»

• ### A New Method for Series Resistance Extraction of Nanometer MOSFETs

Publication Year: 2017, Page(s):2797 - 2803
Cited by:  Papers (1)
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This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first- and second-order mobility degradatio... View full abstract»

• ### Performance Enhancement in Uniaxially Strained Germanium–Tin FinTFET: Fin Direction Dependence

Publication Year: 2017, Page(s):2804 - 2811
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We investigate the impact of uniaxial tensile stress on the performance of germanium-tin (GeSn) fin tunneling field-effect transistor (FinTFET) with fin rotating within (001) plane by numerical simulation. The uniaxial tensile stress with a magnitude of 1 GPa is always along the fin direction. Nonlocal empirical pseudopotential method and k · p method were utilized to calculate the energy b... View full abstract»

• ### A CMOS-Process-Compatible Low-Voltage Junction-FET With Adjustable Pinch-Off Voltage

Publication Year: 2017, Page(s):2812 - 2819
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A novel horizontal n-channel junction field-effect transistor (n-JFET) device is proposed and verified in a 0.25-μm bulk CMOS process. This horizontal JFET consists of alternating n-and p-regions formed by using the P-type electro-static discharge (ESD) implantation. P-type ESD implantation has been an optional and commonly well supported process step by most of foundriesto improve ESD robu... View full abstract»

• ### Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Publication Year: 2017, Page(s):2820 - 2825
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In this paper we investigated the gate-drain access region spacing (LGD) effect on electrical and noise performance of InAlGaN/GaN metal- insulator-semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different LGD of InAlGaN/GaN MIS-HEMTs using sub-10 nm barrier layer are studied. Low-frequency noise measurements have be... View full abstract»

• ### “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Publication Year: 2017, Page(s):2826 - 2834
Cited by:  Papers (4)
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GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable to dynamic RON dispersion, leading to reduced switching efficiency. In this paper, we identify the causes of this dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics. It is sho... View full abstract»

• ### Skewed Straintronic Magnetotunneling-Junction-Based Ternary Content-Addressable Memory—Part I

Publication Year: 2017, Page(s):2835 - 2841
Cited by:  Papers (2)
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This paper presents a ternary content-addressable memory (TCAM) cell based on a skewed straintronic magnetotunneling junction (MTJ) switch. A straintronic magnetotunneling junction (s-MTJ) is a three-terminal switch, where the resistance between two of the terminals switches when a potential is applied to the third (gate) terminal that induces strain in the magnetostrictive free-layer. An s-MTJ is... View full abstract»

• ### Skewed Straintronic Magnetotunneling-Junction-Based Ternary Content-Addressable Memory—Part II

Publication Year: 2017, Page(s):2842 - 2848
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Part I of this paper discussed the design of a four-terminal skewed straintronic magnetotunneling junction (ss-MTJ) switch, and its adaptation to a non-Boolean “one transistor, one trench capacitor, and one ss-MTJ” ternary content-addressable memory (TCAM) cell. This part of the paper discusses a TCAM array based on ss-MTJ-TCAM cells and the associated peripherals for search operatio... View full abstract»

• ### Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts

Publication Year: 2017, Page(s):2849 - 2853
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Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (μFE) is degraded with downscaling the... View full abstract»

• ### Characteristics of GaN-Based LEDs With Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures

Publication Year: 2017, Page(s):2854 - 2858
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The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be red... View full abstract»

• ### Design and Modeling of Blue-Enhanced and Bandwidth-Extended PN Photodiode in Standard CMOS Technology

Publication Year: 2017, Page(s):2859 - 2866
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A photodiode (PD) structure based on N x N junctions is presented to enhance the responsivity in the blue region and extend the optical bandwidth. The use of subsections or multiple junctions increase the number of generated blue photo-carriers as well as the collection speed of photo-carriers at the edges of the depletion regions. An N-well/Psub PD formed of 5 × 5 subsections is designed a... View full abstract»

• ### High-Power LED Photoelectrothermal Analysis Based on Backpropagation Artificial Neural Networks

Publication Year: 2017, Page(s):2867 - 2873
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As an electroluminescent device, the coupling relationship between light-emitting diode (LED) input currents, optical power, and LED junction temperature is a complicated multiphysics process. In this paper, a simplified LED photoelectron-thermal (PET) model by artificial neural network (ANN), which can translate multiphysics field issue into a single physics field problem, is mentioned to study t... View full abstract»

• ### Visible-Blind Au/ZnO Quantum Dots-Based Highly Sensitive and Spectrum Selective Schottky Photodiode

Publication Year: 2017, Page(s):2874 - 2880
Cited by:  Papers (2)
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The optical and electrical properties of Au/ZnO quantum dots (QDs)-based Schottky photodiode are analyzed in this paper. The thin film of ZnO QDs was deposited over the n-Si (111) substrate using the low-cost solution processing technique. The Schottky contact gold (Au) electrodes are deposited using thermal evaporation over the ZnO QDs thin films. The responsivity and contrast ratio of the photod... View full abstract»

• ### Simultaneous Determination of Electron and Hole Mobilities in InP/InGaAsP/InAs/InP Laser Heterostructure by Admittance Spectroscopy

Publication Year: 2017, Page(s):2881 - 2885
Cited by:  Papers (1)
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Temperature- and field-dependent electron and hole mobilities were simultaneously derived from admittance measurements on an InP/InGaAsP/InAs/InP long wavelength laser structure. Each carrier's mobility was separated in the frequency domain due to the corresponding different relaxation times from C versus log f curves. Derived electron and hole mobilities followed the Poole-Frenkel-type field depe... View full abstract»

• ### Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

Publication Year: 2017, Page(s):2886 - 2892
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The photovoltaic (PV) nature of the silicon (Si) quantum dot super lattice (QDSL) is studied with an atomic-layer-deposited aluminum oxide film (ALD-Al2O3) and a conventional sputtered-grown amorphous silicon carbide film (a-SiC). The QDSL structures act as an intermediate layer in a p/i/n+ Si solar cell. The QDSL consists of 4-nm Si on 2-nm SiC nanodisks (NDs) arr... View full abstract»

• ### Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator

Publication Year: 2017, Page(s):2893 - 2899
Cited by:  Papers (2)
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The channel mobility in SiO2/GaN hybrid metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) has been studied. The formalism used for the inversion mobility in MOSFETs has been adapted to the case of GaN MOS-HEMTs, which operate in accumulation condition. Using the values of interface trapped charges (Qtrap = 1.35 × 1012 cm-2) ... View full abstract»

• ### Analysis of GaN HEMTs Switching Transients Using Compact Model

Publication Year: 2017, Page(s):2900 - 2905
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This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. S... View full abstract»

• ### Research of Single-Event Burnout in Floating Field Ring Termination of Power MOSFETs

Publication Year: 2017, Page(s):2906 - 2911
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This paper presents the 2-D numerical simulation results of the single-event burnout (SEB) in the floating field ring (FFR) termination of a power MOSFET for the first time. We investigate the SEB triggering mechanism and SEB performance based on a 140-V typical FFR termination, and find that the structure is sensitive to SEB because of a sharp temperature rise appearing at the p+ base/... View full abstract»

• ### 3-D Sidewall Interconnect Formation Climbing Over Self-Assembled KGDs for Large-Area Heterogeneous Integration

Publication Year: 2017, Page(s):2912 - 2918
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Massively parallel chip assembly based on multi-interposer block concept is demonstrated for large-area heterogeneous system integration. The chips are aligned in parallel by liquid surface tension and assembled on the Si interposers through oxide-oxide bonding at room temperature without thermocompression. 3-D Cu sidewall interconnects (the width is approximately 20 μm) climbing over 100-&... View full abstract»

• ### Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

Publication Year: 2017, Page(s):2919 - 2926
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A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature. This technique reveals information about the mechanisms behind 1/f noise that is difficult to obtain otherwise. These correlation analyses provide strong evidence that the LFN of both nMOS and pMOS transistors is mainly composed of the super... View full abstract»

• ### A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects

Publication Year: 2017, Page(s):2927 - 2934
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A simple model of negative capacitance (NC) MOSFETs is presented. The model treats 2-D electrostatic effects, and the ballistic to diffusive transport regimes. It shows quantitative agreement with numerical device simulations based on a self-consistent solution of the Poisson equation and quantum transport equation based on nonequilibrium Green's function formalism, for an NC MOSFET structure with... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy