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IEEE Transactions on Semiconductor Manufacturing

Issue 4 • Date Nov 1994

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Displaying Results 1 - 7 of 7
  • Static charge removal with IPA solution

    Publication Year: 1994, Page(s):440 - 446
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    Due to the an increase in pattern densities and wafer diameters, it is extremely difficult for wet chemical processing to perform complete cleaning, rinsing and drying for highly rugged surface of very fine pattern ULSI devices. IPA Vapor Drying is a widely used drying method in semiconductor manufacturing. As IPA has low surface tension and very high solubility to water, it is suitable for IPA va... View full abstract»

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  • Mound defect modeling in yield forecasts

    Publication Year: 1994, Page(s):430 - 439
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (676 KB)

    Although the majority of defects found in manufacturing lines have predominantly two-dimensional effects, there are many situations in which 2-D defect models do not suffice, e.g., tall layer bulks, residual resist flakes, and extraneous materials embedded in the IC. In this paper a more general model based on mound defects is presented. Both catastrophic and soft effects of mound defects are inve... View full abstract»

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  • A new method for detecting the polysilicon gate reentrant of the submicron LDD MOSFET's

    Publication Year: 1994, Page(s):460 - 462
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (196 KB)

    With the continued shrinkage of the CMOS devices to the deep submicron regime, the control of the gate-to-drain overlap is becoming a stringent problem. We report that the gate-to-drain (source) current of an LDD p-MOSFET under a high positive gate-to-drain (source) bias is strongly correlated to the oxide thickness in the polysilicon gate edge and, consequently, to the gate-to-drain overlap capac... View full abstract»

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  • Temperature distribution in semiconductor wafers heated in a hot-wall-type rapid diffusion furnace

    Publication Year: 1994, Page(s):423 - 429
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    Transient temperature distribution was calculated for wafers heated in a new hot-wall-type rapid diffusion furnace. Two-dimensional radiative heat transfer was combined with unsteady conduction in wafers and the furnace. The furnace is composed of parallel plate heaters, and heats wafers to a temperature of about 1000°C. The heaters are divided into four zones and their heating powers are PID-... View full abstract»

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  • Applied RTP optical modeling: an argument for model-based control

    Publication Year: 1994, Page(s):454 - 459
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    A simulation of a complete rapid thermal processing (RTP) system is made to investigate the accuracy of various techniques for temperature control. The process simulated was the chemical vapor deposition (CVD) of polycrystalline silicon over an oxide. Control strategies considered were, open loop control, pyrometer control, pyrometer control with a correction for emissivity changes produced by CVD... View full abstract»

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  • A vision system for inspection of ball bonds and 2-D profile of bonding wires in integrated circuits

    Publication Year: 1994, Page(s):413 - 422
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (856 KB)

    A critical stage in the manufacture of integrated circuit devices is inspection of the wire bonds which connect the chip to the lead fingers of the device. This paper describes a vision system for 1) automatic inspection of that part of the wire bond where the wire connects to the bond pad on the chip and 2) inspection of the 2-D profile of the bonding wire. A popular type of bonding (connection t... View full abstract»

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  • Chemical analysis of metallic contamination on a wafer after wet cleaning

    Publication Year: 1994, Page(s):447 - 453
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (572 KB)

    The chemical analysis of trace metallic contamination on a wafer can be achieved by using total reflection X-ray fluorescence (TRXRF) with HF condensation and with poly silicon encapsulation secondary ion mass spectroscopy (PC-STMS). HF condensation can concentrate almost all atoms, such as Fe, Cr, and Ni, within 10 mm of the center of a wafer, which leads to lower detection limits. Poly silicon e... View full abstract»

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Aims & Scope

The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components.

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Editor-in-Chief

Anthony Muscat
Department of Chemical and Environmental Engineering
Harshbarger Bldg., Room 134
1133 E. James Rogers Way
University of Arizona
Tucson, AZ  85721