Proceedings of the IEEE

Issue 10 • Oct. 2016

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Displaying Results 1 - 23 of 23
  • Front Cover

    Publication Year: 2016, Page(s): C1
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  • Proceedings of the IEEE publication information

    Publication Year: 2016, Page(s): C2
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  • Table of Contents [Spintronics]

    Publication Year: 2016, Page(s):1777 - 1778
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  • Ethics and Autonomous Systems: Perils and Promises [Point of View]

    Publication Year: 2016, Page(s):1779 - 1781
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  • Spintronics [Scanning the Issue]

    Publication Year: 2016, Page(s):1782 - 1786
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  • Spintronics, Magnetoresistive Heads, and the Emergence of the Digital World

    Publication Year: 2016, Page(s):1787 - 1795
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (723 KB) | HTML iconHTML

    The development of spintronics has had a dramatic impact on the evolution of the magnetic hard disk drive and, in turn, on the ubiquitous nature of digital data in modern society. The advent of the magnetoresistive read head technology transitioning from the anisotropic magnetoresistance read head to the spintronics-based giant-magnetoresistance read head and the tunneling magnetoresistance read h... View full abstract»

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  • Magnetoresistive Random Access Memory

    Publication Year: 2016, Page(s):1796 - 1830
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3354 KB) | HTML iconHTML

    In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, includin... View full abstract»

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  • Emerging Three-Terminal Magnetic Memory Devices

    Publication Year: 2016, Page(s):1831 - 1843
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (722 KB) | HTML iconHTML

    Spin-transfer torques can switch magnetizations via a current passing through a magnetic tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer torque magnetic random access memory. Three-terminal devices are also possible. One mechanism is to have a free layer that contains a domain wall that can be manipulated by spin-transfer torques and moved between two c... View full abstract»

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  • Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

    Publication Year: 2016, Page(s):1844 - 1863
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5284 KB) | HTML iconHTML

    Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory archite... View full abstract»

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  • Spintronics and Security: Prospects, Vulnerabilities, Attack Models, and Preventions

    Publication Year: 2016, Page(s):1864 - 1893
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4788 KB) | HTML iconHTML

    The experimental demonstration of current-driven spin-transfer torque (STT) for switching magnets and push domain walls (DWs) in magnetic nanowires have opened up new avenues for spintronic computations. These devices have shown great promise for logic and memory applications due to superior energy efficiency and nonvolatility. It has been noted that the nonlinear dynamics of DWs in the physical m... View full abstract»

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  • Spintronic Sensors

    Publication Year: 2016, Page(s):1894 - 1918
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    This paper describes how magnetoresistive materials can be optimized and integrated in magnetic field sensor devices. Giant magnetoresistive (GMR) and tunnel magnetoresistive (TMR) can provide advantageous solutions for a wide range of applications, of which some are described here. Considerations on field sensitivities, intrinsic noise mechanisms, biasing, and integration schemes are presented. View full abstract»

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  • Spin-Torque and Spin-Hall Nano-Oscillators

    Publication Year: 2016, Page(s):1919 - 1945
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1751 KB) | HTML iconHTML

    This paper reviews the state of the art in spin-torque and spin-Hall-effect-driven nano-oscillators. After a brief introduction to the underlying physics, the authors discuss different implementations of these oscillators, their functional properties in terms of frequency range, output power, phase noise, and modulation rates, and their inherent propensity for mutual synchronization. Finally, the ... View full abstract»

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  • Thermoelectric Generation Based on Spin Seebeck Effects

    Publication Year: 2016, Page(s):1946 - 1973
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4057 KB) | HTML iconHTML

    The spin Seebeck effect (SSE) refers to the generation of a spin current as a result of a temperature gradient in magnetic materials including insulators. The SSE is applicable to thermoelectric generation because the thermally generated spin current can be converted into a charge current via spin-orbit interaction in conductive materials adjacent to the magnets. The insulator-based SSE device exh... View full abstract»

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  • Electric-Field Control of Spin-Orbit Interaction for Low-Power Spintronics

    Publication Year: 2016, Page(s):1974 - 2008
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4643 KB) | HTML iconHTML

    Spintronics is regarded as a promising solution for resolving the major challenging issues related to the scaling of Si-based complementary metal-oxide-semiconductor (CMOS) technology as it offers the advantages of combing the spin and charge degrees of freedom. After decades of progress, the quintessence to achieve practical low-dissipation applications lies in the ability to manipulate magnetic ... View full abstract»

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  • Control of Spin Defects in Wide-Bandgap Semiconductors for Quantum Technologies

    Publication Year: 2016, Page(s):2009 - 2023
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1653 KB) | HTML iconHTML

    Deep-level defects are usually considered undesirable in semiconductors as they typically interfere with the performance of present-day electronic and optoelectronic devices. However, the electronic spin states of certain atomic-scale defects have recently been shown to be promising quantum bits for quantum information processing as well as exquisite nanoscale sensors due to their local environmen... View full abstract»

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  • Spintronic Nanodevices for Bioinspired Computing

    Publication Year: 2016, Page(s):2024 - 2039
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1102 KB) | HTML iconHTML

    Bioinspired hardware holds the promise of low-energy, intelligent, and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for biomedical prosthesis. However, one of the major challenges of fabricating bioinspired hardware is building ultrahigh-density networks out of complex processing units inte... View full abstract»

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  • Skyrmion-Electronics: An Overview and Outlook

    Publication Year: 2016, Page(s):2040 - 2061
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2560 KB) | HTML iconHTML

    The well-known empirical phenomenon known as Moore's Law has held true for the past half century. However, it is beginning to break down, owing to limitations arising from leakage currents caused by the quantum effect. As a result, the search for alternatives or complementary technologies that can aid the downscaling of complementary metal-oxide-semiconductor (CMOS) technology has been accelerated... View full abstract»

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  • The M-3 in Budapest and Szeged [Scanning Our Past]

    Publication Year: 2016, Page(s):2062 - 2069
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    In this article, the author takes a look back at the developments that led to the first electronic vacuum tube computer to be ever built in Hungary. View full abstract»

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  • Future Special Issues/Special Sections of the Proceedings

    Publication Year: 2016, Page(s): 2070
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  • Imagine a community hopeful for the future

    Publication Year: 2016, Page(s): 2071
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  • Open Access

    Publication Year: 2016, Page(s): 2072
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  • Introducing IEEE Collabratec

    Publication Year: 2016, Page(s): C3
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  • [Back cover]

    Publication Year: 2016, Page(s): C4
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The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics.

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Meet Our Editors

Editor-in-Chief
H. Joel Trussell
North Carolina State University