Issue 9 • Date Sept. 1994
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A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
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PDF (746 KB)
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Comments on "Oxide-field dependence of electron injection from silicon into silicon dioxide" [with reply]
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PDF (434 KB)
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InGaAs resonant tunneling transistors using a coupled-quantum-well base with strained AlAs tunnel barriers
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PDF (616 KB)
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Room-temperature single-electron memory
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PDF (1108 KB)
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Charges trapped throughout the oxide and their impact on the Fowler-Nordheim current in MOS devices
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PDF (328 KB)
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Analysis of the noise factor of an avalanche photodiode operated in charge-storage mode
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PDF (356 KB)
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In-plane transport properties of Si/Si1-xGex structure and its FET performance by computer simulation
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PDF (964 KB)
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Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET's
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PDF (252 KB)
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Amorphous-silicon distributed-threshold voltage transistors with self-aligned poly-silicon sources and drains
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PDF (292 KB)
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The effects of impact ionization on the operation of neighboring devices and circuits
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PDF (556 KB)
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Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications
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PDF (860 KB)
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A device model for an ion-implanted MESFET with Half-Pearson and Half-Gaussian distribution under post-anneal conditions
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PDF (288 KB)
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Nonlinear optical transmission induced by large transient electric field enhancements in photoconductive zinc selenide switches
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PDF (560 KB)
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Correlation of trap generation to charge-to-breakdown (Qbd ): a physical-damage model of dielectric breakdown
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PDF (712 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


