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IEEE Journal of Quantum Electronics

Issue 4 • April 2016

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Displaying Results 1 - 12 of 12
  • Front cover

    Publication Year: 2016, Article Sequence Number: 0000401
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  • IEEE Journal of Quantum Electronics publication information

    Publication Year: 2016, Article Sequence Number: 0001601
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  • Table of contents

    Publication Year: 2016, Article Sequence Number: 0100401
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  • Phase Conjugate Feedback Effects in Nano-Lasers

    Publication Year: 2016, Article Sequence Number: 1100108
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1743 KB) | HTML iconHTML

    The response of the nanolasers subject to the phase conjugate feedback (PCF) has been analyzed. Calculations have been performed using rate equations, which include the Purcell cavity-enhanced spontaneous emission factor F and the spontaneous emission coupling factor β. In the analysis, the influence of F and β is evaluated for varying the feedback rate. It is observed that, in gener... View full abstract»

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  • Effect of Gain Nonlinearity on Time Delay Signature of Chaos in External-Cavity Semiconductor Lasers

    Publication Year: 2016, Article Sequence Number: 1100207
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3474 KB) | HTML iconHTML

    The effects of gain nonlinearity on the time delay signature (TDS) of both intensity and phase chaos in semiconductor lasers (SLs) with optical feedback are investigated numerically. The SLs subject to single-path feedback are mainly considered, and SLs with dual-path feedback are also discussed for the sake of generality. The TDS is evaluated via both auto-correlation function (ACF) and permutati... View full abstract»

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  • Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes

    Publication Year: 2016, Article Sequence Number: 3300105
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1687 KB) | HTML iconHTML

    Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p-electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserti... View full abstract»

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  • Influences of the p-GaN Growth Temperature on the Optoelectronic Performances of GaN-Based Blue Light-Emitting Diodes

    Publication Year: 2016, Article Sequence Number: 3300208
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2125 KB) | HTML iconHTML

    We investigate the influence of p-(Al)GaN growth temperature (Tg) on the optoelectronic performances of InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs). We systematically combine various characterization techniques, such as current-voltage, current-light output power, capacitance-voltage (C-V) under forward and reverse biases, photocurrent and electroreflectance ... View full abstract»

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  • Internal Photoemission Theory: Comments and Theoretical Limitations on the Performance of Near-Infrared Silicon Schottky Photodetectors

    Publication Year: 2016, Article Sequence Number: 4000110
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1800 KB) | HTML iconHTML

    The theory of an internal photoemission effect (IPE) in Schottky junctions has been reviewed, and the existing Vickers model has been commented and enriched. Indeed, since the modified Fowler equation is very often used to describe the IPE even when approximations on which it is based are not met, we have derived precise conditions that allow the use of the modified Fowler equation and, possibly, ... View full abstract»

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  • Terahertz Generation in Nonlinear Plasmonic Waveguides

    Publication Year: 2016, Article Sequence Number: 8500207
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (627 KB) | HTML iconHTML

    In this paper, terahertz (THz) generation in nonlinear plasmonic waveguides is proposed and thoroughly investigated. The proposed plasmonic waveguide is composed of metal-insulator-metal nanostructure filled with lithium niobate. The THz generation is conducted by means of difference-frequency generation of surface plasmon-polariton (SPP) modes. The SPP modes are designed to be tightly confined in... View full abstract»

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  • Dressing Role in Fourth-Order Fluorescence and Spontaneous Parametric Four-Wave Mixing

    Publication Year: 2016, Article Sequence Number: 9100106
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (917 KB) | HTML iconHTML

    For the first time, we report the time-domain asymmetry and discrepancy of spectra of a two-level, V-level, and Λ -level system. Time-domain signal shows asymmetrical dressed splitting. Spectral discrepancy comes from three signals of three different stages that are indicated in the rising edge, top (adiabatic population transfer stage), and descending edge (spontaneous radiation) of the ri... View full abstract»

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  • IEEE Journal of Quantum Electronics information for authors

    Publication Year: 2016, Article Sequence Number: 0002801
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  • Blank page

    Publication Year: 2016, Article Sequence Number: 0004001
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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong