# IEEE Journal of Quantum Electronics

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Displaying Results 1 - 12 of 12
• ### Front cover

Publication Year: 2016, Article Sequence Number: 0000301
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• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2016, Article Sequence Number: 0001501
| PDF (96 KB)

Publication Year: 2016, Article Sequence Number: 0100301
| PDF (109 KB)
• ### Constriction Resistance and Current Crowding in Electrically Pumped Semiconductor Nanolasers with the Presence of Undercut and Sidewall Tilt

Publication Year: 2016, Article Sequence Number: 2000207
Cited by:  Papers (2)
| | PDF (1639 KB) | HTML

We evaluate the constriction resistance and current crowding in nanolasers using the finite-element method based calculations. We examine both the vertical contact and horizontal contact structures, representing the typical top contact and bottom contact of nanolasers, respectively. We find that, in general, constriction resistance and the degree of current crowding in the bottom horizontal contac... View full abstract»

• ### Direct Evidence of the Leaky Emission in Oxide-Confined Vertical Cavity Lasers

Publication Year: 2016, Article Sequence Number: 2400207
Cited by:  Papers (1)
| | PDF (2284 KB) | HTML

We report the observation of narrow tilted lobes in the far-field emission pattern of leaky oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The VCSEL cavity is surrounded by two selectively oxidized aperture layers, which are intentionally designed to produce a high lateral leakage of the high-order transverse modes of the vertical cavity. The device operates in the fundamental tr... View full abstract»

• ### Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers

Publication Year: 2016, Article Sequence Number: 2500111
Cited by:  Papers (2)
| | PDF (1945 KB) | HTML

The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes a novel approach to developing GaAs-based long-wavelength semiconductor lasers. Such devices are attractive since they approach the improved electronic and optical confinement associated with GaAs-based materials. As a result, GaAs-based metamorphic devices can be expected... View full abstract»

• ### Wavelength-Specific Ultraviolet Photodetectors Based on AlGaN Multiple Quantum Wells

Publication Year: 2016, Article Sequence Number: 4300206
Cited by:  Papers (1)
| | PDF (1551 KB) | HTML

The detection of a specific spectral line in ultraviolet in the presence of broadband ambient lighting is necessary for many applications. We report wavelength-selective photodetection using AlGaN multiple quantum wells grown by molecular beam epitaxy. A near-Gaussian photoresponse peak at 300 nm with a width of 17 nm was achieved in the lateral photocurrent, along with a much faster transient res... View full abstract»

• ### Charge Persistence in InGaAs/InP Single-Photon Avalanche Diodes

Publication Year: 2016, Article Sequence Number: 4500107
| | PDF (1966 KB) | HTML

We present a detailed characterization and modeling of the charge persistence effect that impacts InGaAs/InP single-photon avalanche diodes. Such phenomenon is due to holes that pile-up at the heterointerface outside the active area and has two main consequences: 1) higher noise (equivalent to higher dark count rate), not decreasing as expected at low temperature and 2) possible distortion of the ... View full abstract»

• ### Enhancement of Two-Photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

Publication Year: 2016, Article Sequence Number: 9000114
| | PDF (1959 KB) | HTML

We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QWs), since the intraband matrix elements do not vanish near the band center, as they do in the... View full abstract»

• ### Electrically Controlled Quantum Memories With a Cavity and Electro-Mechanical System

Publication Year: 2016, Article Sequence Number: 9300106
Cited by:  Papers (1)
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In this paper, we propose a scheme to realize electrically controlled quantum memories in a cavity and electro-mechanical system. By assisting with a constant weak optical field into the high-Q cavity, the electrical manipulations of the dark-state polariton and the group velocity of light are derived. The storage and retrieval of the photon state can be realized and optimized by sending the optim... View full abstract»

• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2016, Article Sequence Number: 0002701
| PDF (56 KB)
• ### Blank page

Publication Year: 2016, Article Sequence Number: 0003901
| PDF (2 KB)

## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong