# IEEE Journal of Quantum Electronics

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Displaying Results 1 - 20 of 20
• ### Front cover

Publication Year: 2015, Article Sequence Number: 0000501
| |PDF (480 KB)
• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2015, Article Sequence Number: 0001701
| |PDF (123 KB)

Publication Year: 2015, Article Sequence Number: 0100501
| |PDF (109 KB)
• ### JQE Nobel Prize Winning Author Publications (Current to 1950)

Publication Year: 2015, Article Sequence Number: 0400302
| |PDF (61 KB)
• ### The Thermal Resistance of High-Power Semiconductor Disk Lasers

Publication Year: 2015, Article Sequence Number: 2400109
Cited by:  Papers (5)
| |PDF (4793 KB) | HTML

We present a model for the simulation of the thermal resistance of flip-chip bonded vertical-external-cavity surface-emitting lasers based on the finite-element method. Therefore, we take on and deepen precedent models with regard to three modifications. Our model for the first time comprises the complete heat removal, incorporates temperature-dependent heat conductivity of the diamond heat spread... View full abstract»

• ### Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model

Publication Year: 2015, Article Sequence Number: 2500108
Cited by:  Papers (6)
| |PDF (2218 KB) | HTML

We have used both 16-band and 14-band kp Hamiltonians to investigate electronic band-structure, optical gain and transitions of two type-II quantum wells with InAs and InAs0.98N0.02 as the active layers surrounded by a GaSb layer, respectively. The obtained results are discussed in the context of the importance of the contribution of the p-type conduction band nonparabolicity... View full abstract»

• ### Current Crowding Phenomenon: Theoretical and Direct Correlation With the Efficiency Droop of Light Emitting Diodes by a Modified ABC Model

Publication Year: 2015, Article Sequence Number: 3200109
Cited by:  Papers (1)
| |PDF (1274 KB) | HTML

By incorporating current crowding effect into the conventional ABC model, we theoretically and directly uncover the black box of the relationship between the current diffusion and the internal quantum efficiency, light extraction efficiency, and external quantum efficiency droop of the light emitting diodes (LEDs). A general formula for the current diffusion length (Ls) has been derived... View full abstract»

• ### Simulation of GaN-Based Light-Emitting Diodes With Hemisphere Patterned Sapphire Substrate Based on Poynting Vector Analysis

Publication Year: 2015, Article Sequence Number: 3300105
Cited by:  Papers (5)
| |PDF (1184 KB) | HTML

The GaN-based light-emitting diodes (LEDs) with hemisphere patterned sapphire substrate (PSS) have been investigated numerically using a combined method of ray tracing and finite-difference time-domain techniques based on Poynting vector. Our method has been verified using unpatterned sapphire substrate for which analytical formulas exist. The simulated results show that the hemisphere PSS can imp... View full abstract»

• ### Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

Publication Year: 2015, Article Sequence Number: 3300205
| |PDF (1172 KB) | HTML

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and... View full abstract»

• ### MEMS-Based Tuning of InGaAs/GaAs Quantum Dot-VCSOA

Publication Year: 2015, Article Sequence Number: 5100110
Cited by:  Papers (4)
| |PDF (4787 KB) | HTML

The wavelength tuning mechanism for quantum dot vertical cavity semiconductor optical amplifiers (QD-VCSOAs) is investigated theoretically. It is shown that the narrow optical gain bandwidth of QD-VCSOA cannot be extended considerably by reduction of the mirror reflectivity. Gain spectra of the MEMS tunable QD-VCSOA is calculated by including the effect of bias voltage on the air-gap thickness, ef... View full abstract»

• ### Graphene Q-Switched Cr:ZnSe Laser

Publication Year: 2015, Article Sequence Number: 7000105
Cited by:  Papers (2)
| |PDF (2397 KB) | HTML

For the first time, to the best of our knowledge, a stable Q-switched Cr:ZnSe laser was realized with the graphene saturable absorber grown on SiC substrate. Under an absorbed pump power of 1.8 W, a maximum average output power of 256 mW was obtained with an optical-to-optical conversion efficiency of 14% and a slope efficiency of 19.6%, corresponding to the highest single pulse energy of 1.66 &#x... View full abstract»

• ### Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory

Publication Year: 2015, Article Sequence Number: 7100108
Cited by:  Papers (3)
| |PDF (1058 KB) | HTML

Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate using a buffer layer, is analyzed based on microscopic many-body theory (MBT) for mid-infrared light sources based on Si photonics. MBT can consider a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any artificial fitting paramet... View full abstract»

• ### Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate

Publication Year: 2015, Article Sequence Number: 7100212
Cited by:  Papers (3)
| |PDF (2263 KB) | HTML

The eight-band kp Hamiltonian is applied to calculate electronic band structure and material gain in dilute nitride quantum wells (QWs) grown on InP substrate. Three N-containing QW materials (GaInNAs, GaNAsSb, and GaNPSb) and different N-free barriers (GaInAs, GaAsSb, GaPSb, AlGaInAs, GaInPAs, AlGaAsSb, GaPAsSb, and AlGaPSb) lattice matched to InP are analyzed. It is shown that Ga0.17I... View full abstract»

• ### Spectral Characteristics of Femtosecond Pulses Propagation in Periodically Poled Lithium Niobate via Cascaded Quadratic Nonlinearity

Publication Year: 2015, Article Sequence Number: 9000205
Cited by:  Papers (10)
| |PDF (1452 KB) | HTML

Characteristics of spectral shift and spectrum broadening of femtosecond pulses propagation in periodically poled lithium niobate via cascaded quadratic nonlinearity are investigated. Amount of spectral broadening is obtained analytically from coupled equations including Kerr-like term. Multipeak spectra with the typical self-phase-modulation-like characteristics were obtained experimentally using... View full abstract»

• ### Silicon Photonics

Publication Year: 2015, Article Sequence Number: 9800501
| |PDF (778 KB)
• ### 2D Material Optoelectronics

Publication Year: 2015, Article Sequence Number: 9800601
| |PDF (598 KB)
• ### call for papers-JSTQE on Parity-Time Photonics

Publication Year: 2015, Article Sequence Number: 9801101
| |PDF (727 KB)
• ### OFS24th International Conference on Optical Fibre Sensors

Publication Year: 2015, Article Sequence Number: 9801201
| |PDF (789 KB)
• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2015, Article Sequence Number: 0002901
| |PDF (90 KB)
• ### Blank page

Publication Year: 2015, Article Sequence Number: 0004101
| |PDF (3 KB)

## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong