# IEEE Transactions on Device and Materials Reliability

## Filter Results

Displaying Results 1 - 23 of 23
• ### Front Cover

Publication Year: 2015, Page(s): C1
| |PDF (350 KB)
• ### IEEE Transactions on Device and Materials Reliability publication information

Publication Year: 2015, Page(s): C2
| |PDF (129 KB)

Publication Year: 2015, Page(s):1 - C4
| |PDF (42 KB)
• ### Foreword to the Special Section on “Design for Reliability and Yield for Ultimate CMOS Technologies”

Publication Year: 2015, Page(s): 2
| |PDF (26 KB) | HTML
• ### Test and Repair Methodology for FinFET-Based Memories

Publication Year: 2015, Page(s):3 - 9
Cited by:  Papers (2)
| |PDF (898 KB) | HTML

FinFET transistors are commonly acknowledged as the most promising technology able to play a crucial role to route the development of rapidly growing modern silicon industry. Embedded memories, based on FinFET transistors, lead to new defect types that can require new embedded test and repair solutions. To investigate FinFET-specific faults, the existing fault models and detection techniques are n... View full abstract»

• ### Double-Sampling Design Paradigm—A Compendium of Architectures

Publication Year: 2015, Page(s):10 - 23
Cited by:  Papers (5)
| |PDF (726 KB) | HTML

Aggressive technology scaling impacts dramatically parametric yield, life-span, and reliability of circuits fabricated in advanced nanometric nodes. These issues may become showstoppers when scaling deeper to the sub-10-nm domain. To mitigate them, various approaches have been proposed, including increasing guard bands, fault-tolerant design, and canary circuits. Each of them is subject to several... View full abstract»

• ### Error-Resilient Design Techniques for Reliable and Dependable Computing

Publication Year: 2015, Page(s):24 - 34
Cited by:  Papers (5)
| |PDF (2087 KB) | HTML

Integrated circuits in modern systems-on-chip and microprocessors are typically operated with sufficient timing margins to mitigate the impact of rising process, voltage, and temperature (PVT) variations at advanced process nodes. The widening margins required for ensuring robust computation inevitably lead to conservative designs with unacceptable energy-efficiency overheads. Reconciling the conf... View full abstract»

• ### A Novel Quasi-3D Interface-Trapped-Charge-Degraded Threshold Voltage Model for Omega-Gate $(Omega{G})$ MOSFETs

Publication Year: 2015, Page(s):35 - 39
Cited by:  Papers (2)
| |PDF (931 KB) | HTML

With the effects of equivalent oxide charges on the flat-band voltage, we report a novel quasi-3D interface-trapped-charge-degraded threshold voltage model for omega-gate (ΩG) MOSFETs based on the quasi-3D scaling equation, including the equivalent number of gates. It is found that a thin gate oxide is required to reduce threshold voltage degradation by the trapped charges. For the positive... View full abstract»

• ### The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Publication Year: 2015, Page(s):40 - 46
Cited by:  Papers (2)
| |PDF (1353 KB) | HTML

This study investigates degradation of gallium nitride (GaN) high-electron mobility transistor (HEMT) noise performance after both dc and RF stress with forward gate current. The results are used to facilitate optimization of the robustness of GaN low-noise amplifiers (LNAs). It is shown that forward biasing the gate of a GaN HEMT results in permanent degradation of noise performance and gate curr... View full abstract»

• ### Investigation of Barrier Property of Copper Manganese Alloy on Ruthenium

Publication Year: 2015, Page(s):47 - 53
Cited by:  Papers (2)
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This paper investigates the properties of CuMn/Ru/SiO2. The optimal concentration of Mn in the CuMn alloy as a barrier layer in this structure is determined. The properties of CuMn/Ru/SiO2 are compared to those of CuMn/SiO2 and CuMn/Ta/SiO2. The electrical and material properties of CuMn (0-10 at.% Mn) alloy films deposited on SiO2, Ta, and Ru... View full abstract»

• ### Prediction of L70 Life and Assessment of Color Shift for Solid-State Lighting Using Kalman Filter and Extended Kalman Filter-Based Models

Publication Year: 2015, Page(s):54 - 68
Cited by:  Papers (7)
| |PDF (3032 KB) | HTML

Solid-state lighting (SSL) luminaires containing light-emitting diodes (LEDs) have the potential of seeing excessive temperatures when being transported across country or being stored in nonclimate controlled warehouses. They are also being used in outdoor applications in desert environments that see little or no humidity but will experience extremely high temperatures during the day. This makes i... View full abstract»

• ### Reliability Investigations of AlGaN/GaN HEMTs Based on On-State Electroluminescence Characterization

Publication Year: 2015, Page(s):69 - 74
Cited by:  Papers (6)
| |PDF (1202 KB) | HTML

In this paper, we investigated ON-state electroluminescence (EL) characteristics in fresh GaN-based HEMTs under different ON-state bias conditions. It demonstrated that: 1) the intensity of the ON-state EL emitted by the GaN-based HEMTs with relatively high VDS (VDS > 10 V) monotonically increased as the gate voltage increased; and 2) the distribution of the intensity of t... View full abstract»

• ### A Single and Adjacent Symbol Error-Correcting Parallel Decoder for Reed–Solomon Codes

Publication Year: 2015, Page(s):75 - 81
| |PDF (615 KB) | HTML

This paper presents a novel high-speed Reed-Solomon (RS) decoder. The proposed decoder corrects in parallel adjacent and single-symbol errors; moreover, it serially corrects multiple-symbol errors other than adjacent errors. Its operation is based on a novel scheme that extends an existing binary BCH decoder such that a nonbinary RS code can be targeted. The proposed scheme, however, differs from ... View full abstract»

• ### Leakage Current Reduction Using 350-nm Ultra-Violet Irradiation in P-Channel Polycrystalline-Silicon Thin-Film Transistors

Publication Year: 2015, Page(s):82 - 85
Cited by:  Papers (4)
| |PDF (451 KB) | HTML

We developed a novel technique to reduce the gate-induced drain leakage (GIDL) current by a simple method using the 350-nm ultraviolet (UV) irradiation at 300 W. The pinning GIDL current was reduced from 94% without any pinning, and the threshold voltage was shifted from -6 to -2 V after 1000 s. The mechanism of the GIDL current reduction is deeply investigated and confirmed by the density of stat... View full abstract»

• ### Impact of Fin Width and Back Bias Under Hot Carrier Injection on Double-Gate FinFETs

Publication Year: 2015, Page(s):86 - 89
Cited by:  Papers (2)
| |PDF (407 KB) | HTML

This study compares the effects of n-channel double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with those of such devices with back biases and hot carrier injection (HCI). Compared with the device with a wide Wfin, the device with a narrow Wfin exhibits a larger current tuning range but a more off-state current leakage at a positive back bias because of th... View full abstract»

• ### Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

Publication Year: 2015, Page(s):90 - 100
Cited by:  Papers (6)
| |PDF (1480 KB) | HTML

Through-silicon vias (TSVs) with air gaps as the isolators have been developed to reduce the TSV capacitance and to solve the reliability problems associated with thermomechanical stresses. This paper reports the reliability assessment of the air-gap TSVs by measuring the C-V, I-V, and resistance of the TSVs in terms of thermal and electrical stresses with a focus on thermal shock, temperature var... View full abstract»

• ### Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

Publication Year: 2015, Page(s):101 - 108
| |PDF (1391 KB) | HTML

The 85 MeV 12C6+ and 35 MeV 12C3+ ion induced forward current gain degradation on 2N 6052 transistor is investigated by I-V measurements before and after irradiation. The decrease in gain for 85 MeV C-ion irradiated transistor is drastic, indicating the device is vulnerable for higher energy irradiation. An increase in the base current leading to degrada... View full abstract»

• ### An Improved Four-Port Equivalent Circuit Model of RF MOSFETs for Breakdown Operation

Publication Year: 2015, Page(s):109 - 114
Cited by:  Papers (1)
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In this paper, an improved four-port radio-frequency (RF) model for metal-oxide-semiconductor field-effect transistors is extended to investigate the various RF breakdown phenomena where reliability is a concern for the first time. Reduction of isolation from drain to source as well as inductive behavior occurred at the drain, and source terminals in the breakdown region are analyzed and explained... View full abstract»

• ### Muon-Induced Soft Errors in SRAM Circuits in the Terrestrial Environment

Publication Year: 2015, Page(s):115 - 122
Cited by:  Papers (4)
| |PDF (1586 KB) | HTML

Muon-induced soft errors are an increasing concern with technology scaling. However, the impact of terrestrial muons to the failure rate of circuits is unclear as methodologies have not yet been developed to extrapolate from accelerated measurements to the terrestrial environment. We introduce a new method to estimate muon-induced soft error rates (SERs) in SRAM devices by equating the muon energy... View full abstract»

• ### Nb-Doped $\hbox{La}_{2}\hbox{O}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications

Publication Year: 2015, Page(s):123 - 126
Cited by:  Papers (2)
| |PDF (898 KB) | HTML

Charge-trapping properties of Nb-doped La2O3 (LaNbO) are investigated using an Al/Al2O3/LaNbO/SiO2/Si structure. Compared with the memory device with La2O3, the one with LaNbO shows better charge-trapping characteristics, including larger memory window (6.0 V at ±16 V sweeping voltage), higher programming speed (9.... View full abstract»

• ### 2015 IEEE International Electron Devices Meeting

Publication Year: 2015, Page(s): 127
| |PDF (1396 KB)
• ### 2015 IEEE International Reliability Physics Symposium (IRPS)

Publication Year: 2015, Page(s): 128
| |PDF (568 KB)
• ### IEEE Transactions on Device and Materials Reliability information for authors

Publication Year: 2015, Page(s): C3
| |PDF (107 KB)

## Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.