# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 62

Publication Year: 2015, Page(s):C1 - 694
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2015, Page(s): C2
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• ### Change of Editor-in-Chief

Publication Year: 2015, Page(s): 695
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• ### Atomic Level Modeling of Extremely Thin Silicon-on-Insulator MOSFETs Including the Silicon Dioxide: Electronic Structure

Publication Year: 2015, Page(s):696 - 704
Cited by:  Papers (7)
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Ultimate scaling of Si MOSFETs leads to extremely thin and short channels, which are justifiably modeled at the atomic level. Currently, hydrogen passivation of the channel is used in device models, as a compromise between efficiency and accuracy. This paper advances the state of the art by adopting a density-functional tight-binding Hamiltonian, permitting the inclusion of the confining amorphous... View full abstract»

• ### A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs

Publication Year: 2015, Page(s):705 - 712
Cited by:  Papers (6)
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We propose a new defect characterization technique for high-k dielectric stacks in III-V MOSFETs. This technique allows extracting the defect density from the simulations of the C-V and G-V characteristics at different frequencies. The simulation is performed using a physical distributed compact model, where the trap-assisted capture and emission processes are described in the framework of the mul... View full abstract»

• ### Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length = 13 nm) Considering Supply Voltage and OFF-Current

Publication Year: 2015, Page(s):713 - 721
Cited by:  Papers (7)
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Comprehensive performance benchmarking results for III-V and Si nanowire nMOSFETs (gate length of 13 nm) are reported based on the atomistic full-band ballistic quantum transport simulation including the effects of parasitic resistance and capacitance. After optimizing the source/drain doping for III-V nMOSFETs (to balance source exhaustion versus tunneling leakage), the current, capacitance, and ... View full abstract»

• ### Design of Band Engineered HgCdTe nBn Detectors for MWIR and LWIR Applications

Publication Year: 2015, Page(s):722 - 728
Cited by:  Papers (12)
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In this paper, we present a theoretical study of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detector structures for midwave IR and longwave IR spectral bands. To achieve the ultimate performance of nBn detectors, a bandgap engineering method is proposed to remove the undesirable valence band discontinuity that is currently limiting the performance o... View full abstract»

• ### Potential Benefits and Sensitivity Analysis of Dopingless Transistor for Low Power Applications

Publication Year: 2015, Page(s):729 - 735
Cited by:  Papers (26)
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In this paper, we report the potential benefits of dopingless double-gate field-effect transistor (DL-DGFET) designed on ultrathin silicon on insulator film for low power applications. The simulation results show that the proposed device exhibits higher ON current and less sensitivity toward device parameter variation compared with highly doped junctionless (JL) DGFET. The constraints of high meta... View full abstract»

• ### A Reduced-Order Method for Coherent Transport Using Green’s Functions

Publication Year: 2015, Page(s):736 - 742
Cited by:  Papers (1)
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A reduced-order method is presented to efficiently calculate Green's functions connecting contacts or leads to all the points in a nanostructure in the coherent transport limit. The proposed approach samples a small subset of spatial grid points on the lead and a small subset of energy grid points to build a reduced-order model. The efficacy of the algorithm is demonstrated by applying it to calcu... View full abstract»

• ### Distributive Quasi-Ballistic Drift Diffusion Model Including Effects of Stress and High Driving Field

Publication Year: 2015, Page(s):743 - 750
Cited by:  Papers (7)
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This paper presents a simulation study using a novel distributive quasi-ballistic drift diffusion (DD) TCAD model applied to low mobility unstressed and high mobility stressed scaled pMOS devices. The model is implemented in a DD simulator and used to study the gate length dependence of current drives. The new model captures the physically correct potential distribution and gives the correct drive... View full abstract»

• ### RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

Publication Year: 2015, Page(s):751 - 756
Cited by:  Papers (5)
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Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined on homoepitaxial hydrogen-terminated diamond with the 50-nm device being the smallest gate length diamond transistor fabricated to date. DC- and small-signal RF measurements were undertaken to compare the operation of these gate nodes. RF small-signal equivalent circuits were generated to contrast ... View full abstract»

• ### Versatile Compact Model for Graphene FET Targeting Reliability-Aware Circuit Design

Publication Year: 2015, Page(s):757 - 763
Cited by:  Papers (10)
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In this paper, we report on the development of a versatile compact model for graphene FETs (GFETs). Aging studies have been performed on the GFETs via bias stress measurements and aging laws were implemented in the compact model, including failure mechanisms in the GFETs. The failure mechanisms are identified to be originated from the generation of traps and interface states causing a shift in the... View full abstract»

• ### AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

Publication Year: 2015, Page(s):764 - 768
Cited by:  Papers (7)
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A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to -12.8 dB. The device exhibits high crosstalk suppression ... View full abstract»

• ### Frequency-Modulated Charge Pumping With Extremely High Gate Leakage

Publication Year: 2015, Page(s):769 - 775
Cited by:  Papers (3)
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Charge pumping (CP) has proved itself to be one of the most utilitarian methods to quantify defects in MOS devices. In the presence of low-to-moderate gate leakage, CP quantification is most often implemented via a series of measurements at multiple frequencies. However, this approach is ill-equipped to handle excessive leakage currents common in advanced technologies. In this paper, we transform ... View full abstract»

• ### High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ $\mathrm{cm}^{2}$ Figure of Merit

Publication Year: 2015, Page(s):776 - 781
Cited by:  Papers (18)
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In this paper, the partial gate recess for performance improvement of enhancement-mode (E-mode) GaN power devices is experimentally demonstrated. The gate recess with a careful control of the recess depth was performed with an optimized recessed barrier thickness of ~1.5 nm that is thin enough to completely deplete the 2-D electron gas channel in the gate region. Meanwhile, the remaining barrier p... View full abstract»

• ### Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Publication Year: 2015, Page(s):782 - 787
Cited by:  Papers (26)
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This paper reports an investigation of the trapping mechanisms responsible for the temperature-dependent dynamic-RON of GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs). More specifically, we perform the following. First, we propose a novel testing approach, based on combined OFF-state bias, backgating investigation, and positive substrate operati... View full abstract»

• ### Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor

Publication Year: 2015, Page(s):788 - 794
Cited by:  Papers (1)
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We investigated the effect of body thickness on the electrical performance of GaSb double-gate ultrathin-body (DG-UTB) MOSFET by examining the band structure of the 12- (~2 nm), 24- (~4 nm), 36- (~6 nm), and 48- (~8 nm) atomic-layer (AL) thick GaSb. Two different surface orientations, namely, (100) and (111), were studied. sp3d5s* tight-binding model is used to cal... View full abstract»

• ### Parameter Extractions for a GaAs pHEMT Thermal Model Using a TFR-Heated Test Structure

Publication Year: 2015, Page(s):795 - 801
Cited by:  Papers (2)
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The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor's (pHEMT) substrate and epilayer regions are extracted to develop a 3-D finite-element-method thermal model. The thermal characterization is based on electrical gate-metal-finger temperature measurements of a customized GaAs pHEMT test structure. Heat flow from an integrated thin-film resisto... View full abstract»

• ### Differentiated Doping Profile for Vertical Terahertz GaN Transferred-Electron Devices

Publication Year: 2015, Page(s):802 - 807
Cited by:  Papers (1)
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The potential of vertical differentiated gallium nitride (GaN) transferred electron devices (TEDs) is compared with that of the base flat doping profile TED for the realization of RF power sources at 1 THz. The TED oscillator modeling is a time-domain continuous wave pure sine model. The semiconductor device model is a 1-D numerical physical macroscopic model based on the energy-momentum approach.... View full abstract»

• ### Investigation of Junction Thermal Characteristics of Light-Emitting Transistors

Publication Year: 2015, Page(s):808 - 812
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Self-heating effect is the main contribution to the junction temperature in bipolar junction transistors. In this paper, the dc temperature-variation measurement and extraction method, including thermal-electric feedback coefficient of an InGaP/GaAs light-emitting transistor (LET), are presented. The thermal-electric feedback coefficient of the LET is -2.07 mV/K at collector current of 2 mA and th... View full abstract»

• ### A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

Publication Year: 2015, Page(s):813 - 820
Cited by:  Papers (3)
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The distributed oxide trap model based on tunneling of carriers from the semiconductor surface is unified with the two-band Shockley-Read-Hall type of capture and emission model for interface states. The new model explains the often observed upturn of MOS conductance at high frequencies when biased in inversion. The unified two-band model fully covers both types of charge traps in all MOS bias reg... View full abstract»

• ### Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Publication Year: 2015, Page(s):821 - 827
Cited by:  Papers (7)
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Al2O3-AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) featuring indium tin oxide transparent gate electrode are fabricated for the purpose of evaluating the gate reliability. The transparent gate electrode allows electroluminescence (EL) observation in the region directly under the gate, which cannot be performed in conventional MIS-HEMTs with opaque gate ele... View full abstract»

• ### Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs

Publication Year: 2015, Page(s):828 - 834
Cited by:  Papers (12)
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This paper introduces an advanced methodology for fast 3-D Technology Computer Aided Design (TCAD) electrothermal simulation for the analysis of power devices. The proposed methodology is based on coupling finite element method (FEM) thermal and circuit electrical simulation in a mixed-mode setup. A power InAlN/GaN high-electron mobility transistor (HEMT) is used to perform validation of the desig... View full abstract»

• ### Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Publication Year: 2015, Page(s):835 - 839
Cited by:  Papers (3)
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A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the tra... View full abstract»

• ### Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

Publication Year: 2015, Page(s):840 - 846
Cited by:  Papers (17)
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This paper presents an enhanced, closed-form expression for the thermal resistance, and thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of the temperature-dependent thermal conductivity of GaN and SiC or Si substrates. In addition, the expression accounts for temperature increase across the die-attach. The model's validity is verified by comparing it with e... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy