# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 29
• ### A detailed investigation of heterojunction transport using a rigorous solution to the Boltzmann equation

Publication Year: 1994, Page(s):592 - 600
Cited by:  Papers (16)
| |PDF (808 KB)

A detailed study of electron transport across an Np+ heterojunction diode is performed using a rigorous numerical solution to the Boltzmann equation. Results are presented for the I-V characteristic and the average electron energy, temperature, energy flux, and quasi-Fermi levels as a function of position. Comparison with a simple analytical treatment shows good agreement for the curren... View full abstract»

• ### The Poole-Frenkel effect in 6H-SiC diode characteristics

Publication Year: 1994, Page(s):587 - 591
Cited by:  Papers (12)  |  Patents (1)
| |PDF (392 KB)

The large bandgap of SiC makes the recombination mechanism the main process in determining the forward current in a large range of temperature. We have added the Poole-Frenkel effect to the conventional Shockley-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC View full abstract»

• ### Electron-beam controlled switching using quartz and polycrystalline ZnS

Publication Year: 1994, Page(s):582 - 586
Cited by:  Papers (4)
| |PDF (396 KB)

Results of electron-beam controlled switching experiments with switch samples of quartz crystal and polycrystalline zinc selenide (ZnSe) are presented. For switch samples of both materials, drastic reductions of the switch resistance were induced by the electron beam. The quartz sample showed very fast temporal response (less than 1 ns) with potential applicability for current control. The ZnSe sa... View full abstract»

• ### Monte Carlo simulation of noise in GaAs semiconductor devices

Publication Year: 1994, Page(s):575 - 581
Cited by:  Papers (10)
| |PDF (608 KB)

The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effects are important, being from 0.5 to 1.5 μm in length. The results agree qualitatively with experimental noise measurements performed on similar devices. Monte Carlo noise calculations have also been conducted for Schottky barrier diodes. A method for conducting full-device Monte Carlo simulation... View full abstract»

• ### A new linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET's

Publication Year: 1994, Page(s):567 - 574
Cited by:  Papers (5)
| |PDF (696 KB)

A new linear sweep technique to measure generation lifetimes (τg) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted... View full abstract»

• ### A self-consistent characterization methodology for Schottky-barrier diodes and ohmic contacts

Publication Year: 1994, Page(s):558 - 566
Cited by:  Papers (16)
| |PDF (792 KB)

Based on the simple interfacial-layer theory, the extraction methods for the interface parameters of the metal-semiconductor contact have been developed and applied to characterize both the Schottky-barrier diodes and the ohmic contacts in a self-consistent manner. It has been shown that the physical parameters at the metal-semiconductor interface can be extracted from the I-V characteristics of t... View full abstract»

• ### A large-bias conduction model of polycrystalline silicon films

Publication Year: 1994, Page(s):524 - 532
Cited by:  Papers (9)  |  Patents (9)
| |PDF (824 KB)

There exists a need for a large-bias conduction model of polysilicon films used in VLSI/ULSI and in high power integrated circuits. A large-bias conduction model has been developed by extending the emission-based models of Lu et al. (1983) and Mandurah et al. (1981) valid for small-bias, small-signal conditions. The following large-bias effects have been taken into account: (1) asymmetry of potent... View full abstract»

• ### The effect of cosmic rays on the soft error rate of a DRAM at ground level

Publication Year: 1994, Page(s):553 - 557
Cited by:  Papers (57)  |  Patents (3)
| |PDF (452 KB)

This paper provides conclusive evidence that cosmic rays cause soft errors in commercial dynamic RAM (DRAM) chips at ground level. Cosmic-ray-induced soft errors in electronic components have long been a problem for the designers of satellites and spacecraft, but they have not generally been considered to be an important influence on memory chip soft error rate (SER) in terrestrial environments. I... View full abstract»

• ### Transient effects in accumulation mode p-channel SOI MOSFET's operating at 77 K

Publication Year: 1994, Page(s):519 - 523
Cited by:  Papers (4)
| |PDF (468 KB)

This paper critically examines the conduction mechanisms in accumulation mode p-channel SOI MOSFET's operating at cryogenic temperatures. In particular, attention is given to the body current component, which in most cases is experimentally not observed at 77 K or 4.2 K. As will be demonstrated, both the body current and the back accumulation current show pronounced transient effects at low temper... View full abstract»

• ### Electrical characteristics of rapid thermal nitrided-oxide gate n and p-MOSFET's with less than 1 atom% nitrogen concentration

Publication Year: 1994, Page(s):546 - 552
Cited by:  Papers (45)  |  Patents (2)
| |PDF (636 KB)

The characteristics and reliability of nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration in the gate films were investigated in detail. These very light nitridations were accomplished using NH3 gas at low temperatures-from 800° C to 900° C. Nitrogen concentrations as low as 0.13 atom% were successfully measured by SIMS and AES. The region of opt... View full abstract»

• ### Reliability of SSPA's and TWTA's

Publication Year: 1994, Page(s):625 - 626
Cited by:  Papers (15)
| |PDF (188 KB)

Two extensive communication satellite reliability studies were conducted in 1991 and 1993. These studies permitted a direct in-orbit' comparison at C-band between a thermionic electron device [TWT/TWTA] and a solid state device [GaAs MESFET/SSPA]. Excellent performance, lifetimes and reliabilities for both types of microwave power amplifiers were obtained. However, surprisingly, both studies regi... View full abstract»

• ### Influences of MBE growth processes on photovoltaic 3-5 μm intersubband photodetectors

Publication Year: 1994, Page(s):511 - 518
Cited by:  Papers (28)
| |PDF (816 KB)

The asymmetric photoresponse and dark current of GaAs/AlAs/Al0.3Ga0.7As 3-5 μm intersubband photodetectors is examined both experimentally and through simulations. The intended doping position is varied to determine the importance of dopant redistribution on the detector characteristics. Growth interruptions were introduced to determine the importance of inequivalent heter... View full abstract»

• ### SiC MOS interface characteristics

Publication Year: 1994, Page(s):618 - 620
Cited by:  Papers (58)
| |PDF (256 KB)

It is well known that SiC can be thermally oxidized to form SiO 2 layers. And Si MOSFET IC's using thermally grown SiO2 gate dielectrics are the predominant IC technology in the world today. However the SiC/SiO2 interface has not been well characterized as was the case for Si MOS in the early 1960's. This paper presents data which for the first time characterizes ... View full abstract»

• ### An electromigration failure model for interconnects under pulsed and bidirectional current stressing

Publication Year: 1994, Page(s):539 - 545
Cited by:  Papers (39)  |  Patents (8)
| |PDF (524 KB)

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime,... View full abstract»

• ### Elimination of cross sensitivity in a three-dimensional magnetic sensor

Publication Year: 1994, Page(s):622 - 624
Cited by:  Papers (3)
| |PDF (284 KB)

In three-dimensional (3-D) integrated magnetic sensor design, cross-axis sensitivities among the various components of the magnetic field have been a problem. In this brief it is demonstrated that complete elimination of the cross-sensitivity is possible if a 3-D magnetic sensor is implemented in BiCMOS technology. A compact device structure is designed to detect the three components of the magnet... View full abstract»

• ### Design of a multi-channel true flat fluorescent lamp for avionic AM-LCD backlighting

Publication Year: 1994, Page(s):504 - 510
Cited by:  Papers (8)  |  Patents (1)
| |PDF (572 KB)

For backlighting a direct view avionic liquid crystal display (LCD), a multi-channel true flat fluorescent lamp (T-FFL) has been designed and developed. The design and development was accomplished through (1) electric field plot for various ratios of depth to height of the hollow cathode, (2) decrease of charge losses, (3) employment of internal dielectric mirror, (4) monitoring of the penetration... View full abstract»

• ### Regional Monte Carlo modeling of electron transport and transit-time estimation in graded-base HBT's

Publication Year: 1994, Page(s):484 - 490
Cited by:  Papers (10)
| |PDF (572 KB)

Steady-state electron transport in graded-base heterojunction bipolar transistors is investigated using a regional ensemble Monte Carlo approach. Besides the graded band and scattering parameters already incorporated in the particle model, emitter-base and collector-base junctions are also considered in the boundary conditions for carrier injection/absorption. It is shown that optimum base transit... View full abstract»

• ### Modeling pentode-like characteristics of recessed-gate static induction transistor

Publication Year: 1994, Page(s):616 - 617
| |PDF (184 KB)

A new analytical model is described for the pentode-like region of the characteristics of recessed-gate SIT structures. The model allows one to investigate the transition from saturating characteristics of long channel JFET's to nonsaturating behavior of SIT devices, taking into account realistic device geometry View full abstract»

• ### Efficient ohmic boundary conditions for the Monte Carlo simulation of electron transport

Publication Year: 1994, Page(s):601 - 606
Cited by:  Papers (7)
| |PDF (616 KB)

The development of macroscopic transport models, accurate for studying hot-electron transport in semiconductors, involves a direct consideration of higher-moment terms. All hydrodynamic transport models (HTM's), derived from moments of the Boltzmann transport equation, require the introduction of closure relations to terminate the resulting infinite set of macroscopic equations. These closure rela... View full abstract»

• ### Annealing of degraded npn-transistors-mechanisms and modeling

Publication Year: 1994, Page(s):533 - 538
Cited by:  Papers (9)  |  Patents (88)
| |PDF (484 KB)

We report on the annealing of degraded npn-transistors, which includes a new model describing the decrease of base current during annealing. We found that two mechanisms are responsible for annealing: the recombination of charges and the bonding of hydrogen atoms on interface traps. Furthermore, we show that a heating of the whole device and a forward biasing of the emitter-base-diode activate the... View full abstract»

• ### A comment on “The GTCC stored charge model”

Publication Year: 1994, Page(s):627 - 628
| |PDF (132 KB)

Hamel and Selvakumar (ibid., vol. 38, pp. 1467-76, 1991) have criticized the Klose and Weider, transient integral charge control (TICC) charge partitioning model (see ibid., vol. 34, pp. 1090-9, 1987) in comparison with their generalized transient charge control (GTCC) relation. In addition, it is claimed (Hamel, ibid., vol. 40, pp. 1713-16, 1993) ...the problem of rigorously determining the char... View full abstract»

• ### A three terminal InP/InGaAsP optoelectronic thyristor

Publication Year: 1994, Page(s):620 - 622
Cited by:  Papers (3)  |  Patents (1)
| |PDF (284 KB)

A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-voltage characteristics confirm the thyristor type switching action with a maximum gate controllab... View full abstract»

• ### Time dependent analysis of an ion-implanted GaAs OPFET

Publication Year: 1994, Page(s):491 - 498
Cited by:  Papers (9)
| |PDF (512 KB)

A time-dependent analysis of the electrical characteristics of an ion implanted GaAs optical field effect transistor (OPFET) has been carried out. Both the cases of light turning on and off at a reference time t=0 have been considered. The photovoltaic effect across the Schottky junction and the depletion width modulation in the active layer have been taken into account. The threshold voltage, cha... View full abstract»

• ### Selective emission of electrons from patterned negative electron affinity cathodes

Publication Year: 1994, Page(s):607 - 611
Cited by:  Papers (5)  |  Patents (2)
| |PDF (548 KB)

We have observed electron emission into vacuum from the exposed areas of a patterned p++-GaAs substrate which was coated with cesium and oxygen. The emission barrier is a double layer of titanium-tungsten/silicon nitride. The exposed areas of the cathode were activated to the negative electron affinity (NEA) condition. It has been an open question whether it would be possible to activat... View full abstract»

• ### Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performance

Publication Year: 1994, Page(s):465 - 475
Cited by:  Papers (20)
| |PDF (956 KB)

This paper analyzes the effects of the separation between the gate and the drain electrodes on the high-frequency performance limitations of heterostructure MODFET's. Based on the effective gate-length and carrier velocity saturation concepts first the key small-signal equivalent network model parameters of the MODFET are calculated. The concept of open-circuit voltage gain, defined as the transco... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy