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Circuits, Devices & Systems, IET

Issue 3 • Date May 2014

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Displaying Results 1 - 11 of 11
  • Editorial: Construction and technology of power semiconductor devices

    Page(s): 153 - 154
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    Freely Available from IEEE
  • Future trends in high-power bipolar metal-oxide semi-conductor controlled power semi-conductors

    Page(s): 155 - 167
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    Freely Available from IEEE
  • Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

    Page(s): 168 - 175
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (647 KB)  

    Analytical models have been proposed to describe the onset current density for the initial snapback in the transistor on-state mode and in the blocking state of reverse conducting-insulated gate bipolar transistors (RC-IGBT) for the stripe and cylindrical designs of the anode shorts. In cylindrical case, there are two possible ways in designing the anode shorts and the authors have proposed an analytical model for each of them. The considered RC-IGBTs are vertical with soft punch-through type buffer designs. The analytical model has been evaluated with the aid of 2-D device simulations and measurements. The authors have investigated the initial snapback phenomenon for different voltage class devices at a given technology (anode and buffer profiles) and found out that the snapback voltage increases with the blocking capability but not the snapback current density. The authors have also observed that the initial snapback phenomenon is more pronounced at lower temperatures. From the analytical model as well as simulation and measurement results, the authors have found that for a given voltage class and technology, the p+-anode width is the only remaining design degree of freedom which determines the initial snapback. The adjustment of the on-state losses can then be done with the proportion of the n+-short region. View full abstract»

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  • Optimisation of the reverse conducting IGBT for zero-voltage switching applications such as induction cookers

    Page(s): 176 - 181
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    The reverse conducting-IGBT (RC-IGBT) is a well suited device for soft switching applications, that is, zero voltage switching (ZVS). However, standard RC-IGBTs are optimised for hard switching, which shows different switching waveforms compared with soft switching. In this study, the optimisation of the RC-IGBT is described for soft switching applications using the example of an induction cooker. The investigated induction cooker is implemented by using the single-ended quasi-resonant topology. Simulations show that main losses of the induction cooker occur in the induction coil and the RC-IGBT (power switch). The performance of the coil can be improved mainly by minimising the coil resistance. The IGBT-optimisation is based on the reduction of tail current in the soft switching mode. The IGBT thickness is decreased and the local lifetime is used to achieve lower tail current. A reduction of the overall losses by 30% is achievable. As a result, the cooling system of the IGBT can be smaller and cheaper. View full abstract»

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  • 3.3 kV PT-IGBT with voltage-sensor monolithically integrated

    Page(s): 182 - 187
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (555 KB)  

    An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor. View full abstract»

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  • VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies

    Page(s): 188 - 196
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    Freely Available from IEEE
  • Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

    Page(s): 197 - 204
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    Freely Available from IEEE
  • Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

    Page(s): 205 - 212
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (852 KB)  

    The surge-current ruggedness of free-wheeling diodes can be improved by implementing the self-adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode-side filaments during reverse-recovery. Experiments confirm the weak switching performance of such a diode in comparison to a conventional diode. By implementing the controlled injection of backside holes concept cathode-side filaments can be suppressed. However, this measure is not sufficient to regain the switching ruggedness of a conventional diode. It is also necessary to fully embed the p+-areas of the SPEED anode in the low-doped p-type area to avoid high electrical field strengths at the p+p-junction and pinning of anode-side filaments. However, anode-side adjustments for improving the switching ruggedness can reduce the benefit of the SPEED concept regarding the surge-current capability. View full abstract»

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  • Influence of surface states on the reverse and noise properties of silicon power diodes

    Page(s): 213 - 220
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    This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so called slow surface states (SSS). The SSS are caused by the presence of material process induced defects in the region of a p-n junction surface termination. SSS have fundamental impact on the reverse properties of diodes and their low frequency noise behaviour. The second cause is connected with so called volume structural defects (VSD). Their origin can be `genetic' (e.g. the presence of imperfection inside a silicon crystal) or they can be induced during technological processing. These defects are not repairable and under the reverse bias they will form so called `hot spots' that is, places with a local high current density. Rapid and operative measurements of the noise power can reveal latent instabilities of reverse characteristics invisible during a standard inspection process during the production. View full abstract»

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  • Parameters influencing the maximum controllable current in gate commutated thyristors

    Page(s): 221 - 226
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    The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration. View full abstract»

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  • SiC and GaN devices - wide bandgap is not all the same

    Page(s): 227 - 236
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    Freely Available from IEEE

Aims & Scope

IET Circuits, Devices & Systems covers circuit theory and design, circuit analysis and simulation, computer aided design,  filters, circuit implementations, cells and architectures for integration.

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