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Microwave and Wireless Components Letters, IEEE

Issue 3 • Date March 2014

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Displaying Results 1 - 25 of 27
  • Table of contents

    Publication Year: 2014 , Page(s): C1 - C4
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  • IEEE Microwave and Wireless Components Letters publication information

    Publication Year: 2014 , Page(s): C2
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  • Leapfrog Formulation of the 3-D LOD-FDTD Algorithm

    Publication Year: 2014 , Page(s): 137 - 139
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (640 KB) |  | HTML iconHTML  

    This letter presents an efficient leapfrog formulation of the three-dimensional locally one dimensional finite-difference time-domain (3-D LOD-FDTD) method, denoted by the leapfrog LOD-FDTD method. By adopting the leapfrog scheme, the new algorithm, whose right-hand sides are much simpler and more concise than those in the original LOD-FDTD method, is implemented in the same manner as those in the conventional FDTD method. Numerical results demonstrate that the proposed algorithm requires the less amount of memory and the less CPU time while keeping the same numerical properties in comparisons with the original LOD-FDTD method. View full abstract»

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  • On-Chip GIPD Bandpass Filter Using Synthesized Stepped Impedance Resonators

    Publication Year: 2014 , Page(s): 140 - 142
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (761 KB) |  | HTML iconHTML  

    By utilizing synthesized stepped impedance resonators (SIRs) with high/low-impedance synthesized coplanar waveguides, a novel on-chip three-pole bandpass filter is realized on glass integrated passive device process. The synthesized SIR, formed by quasi-lumped series inductors and MIM capacitors, provides an effective way to utilize the chip area efficiently. The footprint of the miniaturized filter, 0.045 ×0.029 λg2, is less than one-third the size of the second smallest one in the literature. The upper stopband, extending from 1.4 f0 to 3.77f0, is also the widest among the reported on-chip SIR filter designs. The |S21| at f0 (4.2 GHz) is -3.2 dB, while the bandwidth is 29%. View full abstract»

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  • Compact Balanced-to-Balanced Microstrip Diplexer With High Isolation and Common-Mode Suppression

    Publication Year: 2014 , Page(s): 143 - 145
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (533 KB) |  | HTML iconHTML  

    In this letter, a compact balanced-to-balanced microstrip diplexer with high isolation and common-mode (CM) suppression is proposed for wireless local area networks (WLAN) and worldwide interoperability for microwave access (WiMAX) applications simultaneously. The proposed diplexer is designed via the combination of two balanced bandpass filters (BPF) without extra junction matching network. Both BPFs are composed of uniform impedance resonators (UIR) and short- ended microstrip parallel-coupling feedlines. Finally, the proposed diplexer is fabricated and measured. The measured differential-mode (DM) isolation in the two passbands is more than 33 dB. While for the CM signal, the insertion loss is below 30 dB in the two operation bands. The simulated and measured results exhibit a satisfactory agreement to validate the proposed configuration. The diplexer size is only 0.26λg ×0.38λg, where λg is the guided wavelength at 2.45 GHz. View full abstract»

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  • Highly Selective Reconfigurable Filter for UWB Systems

    Publication Year: 2014 , Page(s): 146 - 148
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (755 KB) |  | HTML iconHTML  

    A novel highly selective compact reconfigurable filter with a switchable notched band for ultrawideband (UWB) systems is presented. The proposed filter exhibits two distinct features by altering switching device such as PIN diode (BAP65-02) in this case. First, a switchable notched band is generated which facilitates a rejection at 3.5 GHz to avoid interferences from the WiMAX systems. Later, a reconfigurable filter is developed which changes from bandpass to bandstop at the same UWB (3.1-5.2 GHz) spectrum. The filter shows very low pass-band insertion loss and five transmission zeros are created between passband edges to enhance the signal selectivity and broad rejection at the stopband. A filter sample is fabricated to provide an experimental verification on the proposed filter. The proposed filter is able to achieve significant size reduction as compared to an conventional reconfigurable filters and bandpass filters with notched band. View full abstract»

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  • S-Shaped Complementary Split Ring Resonators and Their Application to Compact Differential Bandpass Filters With Common-Mode Suppression

    Publication Year: 2014 , Page(s): 149 - 151
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (631 KB) |  | HTML iconHTML  

    This letter presents an S-shaped complementary split ring resonator (S-CSRR) for application in compact differential filters. The working principle of the proposed S-CSRR is explained and a circuit model is developed and validated through electromagnetic simulations. It is shown that an S-CSRR-loaded differential microstrip line with series gaps can be used in the design of compact differential bandpass filters (BPFs) with common-mode suppression. The filter design procedure is explained and the theoretical concept is validated through fabrication and measurement of a compact (0.09λg ×0.25 λg) third-order differential BPF with common-mode suppression. View full abstract»

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  • Compact Dual-Mode Wideband Filter Based on Complementary Split-Ring Resonator

    Publication Year: 2014 , Page(s): 152 - 154
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (686 KB) |  | HTML iconHTML  

    This letter proposes a microstrip filter based on a dual-mode complementary split-ring resonator (DMCSRR). For the input/output coupling, a dual C-shaped feed structure is implemented together with the DMCSRR to acheive a wideband response. The resonator offers a wide fractional bandwidth of 62% at the central frequency of 2.23 GHz and a very compact structure with a footprint of 0.0625λg×0.18λg, where λg is the guided wavelength at the midband frequency. A comprehensive lumped element circuit analysis accompanies the simulation and measurement results. View full abstract»

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  • Design of a Compact Dual-Band Bandpass Filter Using Coupled Stepped-Impedance Resonators

    Publication Year: 2014 , Page(s): 155 - 157
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (524 KB) |  | HTML iconHTML  

    A compact dual-band bandpass filter (BPF) using coupled three-section stepped-impedance resonators (SIRs) has been proposed and analyzed in this letter. By its symmetrical merit, the even-odd mode analysis method is used to obtain the input admittance of its bisection circuits. After the Richard's transformation, each bisection circuit is derived as an equivalent LC circuit. Combining these two LC circuits, the equivalent circuit for the proposed filter is built with its design parameters as a function of even-/odd-mode impedances of the coupled SIR. The proposed circuit is then classified into two distinctive parts, a transversal structure for the first two resonances and a Π-shaped inductor network for the mutual coupling between the source/load. Thus, there are two reflection zeros appearing in each passband and five transmission zeros (TZs) generated to improve the out-of-band rejection. A prototype dual-band filter has been designed and fabricated to verify the predicted filtering performance and the accuracy of the presented design principle. View full abstract»

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  • New Compact Triple-Passband Bandpass Filter Using Multipath-Embedded Stepped Impedance Resonators

    Publication Year: 2014 , Page(s): 158 - 160
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (773 KB) |  | HTML iconHTML  

    This letter presents a new resonator configuration to design a triple-passband filter with high passband selectivity and compact circuit size. The filter includes two multipath-embedded stepped impedance resonators (SIRs), connected with magnetically coupling by via hole technique at the symmetric plane of the filter. The multipath-embedded SIR is designed at 1.575, 2.45, and 3.5 GHz. The resonant frequencies can be easily controlled by tuning impedance ratio K i and length ratio αi (where i = 1, 2, and 3) of the multipath-embedded SIR. This study provides an effective method to easily design the triple-passband filter with compact circuit size, high passband selectivity and low insertion loss. View full abstract»

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  • Compact Wide Stopband Bandpass Filter on Multilayer Organic Substrate

    Publication Year: 2014 , Page(s): 161 - 163
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (649 KB) |  | HTML iconHTML  

    We present the design and development of a compact wide stopband bandpass filter using novel quasi-lumped LC resonators on a defected ground structure. The resonators are built on a multilayer organic substrate and are coupled to external circuits by shunt-inductive impedance inverters. Experimental results show that the filter has a center frequency of 960 MHz and a 3 dB fractional bandwidth of 8%. The filter has a wide stopband that has an out-of-band rejection of better than 30 dB up to five times of the center frequency. The size of the filter is 5.4 mm × 27 mm or 0.027λg×0.132λg, where λg is guided wavelength at 960 MHz. View full abstract»

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  • Compact Differential Wideband Bandpass Filters With Wide Common-Mode Suppression

    Publication Year: 2014 , Page(s): 164 - 166
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (639 KB) |  | HTML iconHTML  

    A compact differential wideband bandpass filter (WBPF) composed of a coupled full-wavelength loop is presented. The differential-mode circuit of the proposed filter is analyzed, showing that the proposed filter exhibits a three-pole differential-mode (DM) wideband bandpass filtering response. Moreover, both the fractional bandwidth (FBW) and the inband return loss can be adjusted by changing the parameter of the characteristics of coupled-line. Furthermore, the proposed filter provides a wider common-mode (CM) rejection characteristics owing to its multiple periodical transmission zeros. Additionally, the filter has a very compact size occupation. To verify the design concept, one filter example has been designed, fabricated and measured. The fabricated filter demonstrates good differential WBPF performance including a broad 3 dB fractional bandwidth of 66.6% centered at f0 = 1.62 GHz, a wider 14.5 dB CM rejection from dc to 2.96f0, and a very compact size of 0.163 λg2. View full abstract»

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  • Phase Shifters With Wide Range of Phase and Ultra-Wideband Performance Using Stub-Loaded Coupled Structure

    Publication Year: 2014 , Page(s): 167 - 169
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (740 KB) |  | HTML iconHTML  

    Compact planar phase shifters with wide range of differential phase shift across ultra-wideband frequency are proposed. To achieve that performance, the devices use broadside coupled structure terminated with open-ended or short-ended stubs. The theory of operation for the proposed devices is derived. To validate the theory, several phase shifters are designed to achieve a differential phase ranging from -180° to 180°. Moreover, three prototypes are developed and tested. The simulated and measured results agree well with the theory and show less than 7° phase deviation and 1.4 dB insertion loss across the band 3.1-10.6 GHz. View full abstract»

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  • Low Loss Tunable Superconducting Dual-Mode Filter at L-Band Using Semiconductor Varactors

    Publication Year: 2014 , Page(s): 170 - 172
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (664 KB) |  | HTML iconHTML  

    This letter presents a superconducting continuously tunable bandpass filter with dual-mode resonator and Gallium arsenide (GaAs) varactors. The even- and odd-modes of the dual-mode resonator can be tuned simultaneously using a single bias voltage. The interstage and external couplings are realized with interdigital coupling structure to enhance the coupling strength. A four-pole dual-mode superconducting filter at L-band with a fractional bandwidth of approximately 20% is successfully designed. Two transmission zeros are generated in the upper stopband to increase the stopband rejection. The tuning range of the filter is 16% from 784.92 to 918.23 MHz. The insertion loss at 918.23 MHz is 0.69 dB with a reverse bias voltage of 9 V. The measurements of the filter match well with the simulated ones. View full abstract»

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  • Design of a Q-Band Eight-Way Lumped Power Divider in 90 nm CMOS Technology

    Publication Year: 2014 , Page(s): 173 - 175
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1113 KB) |  | HTML iconHTML  

    A Q-band eight-way power divider in CMOS technology is presented. This divider is designed using lumped elements to realize a compact layout. Parametric analyses for the parasitic effects are given using simplified inductor/capacitor models. Measurement in the 37-49 GHz frequency range shows an insertion loss less than 2.7 dB, the input/output return loss better than -13.7 dB and the port-to-port isolation better than 22.5 dB (more than 30 dB over 44-49 GHz). View full abstract»

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  • Wideband Single-Layer 90 ^{\circ} Phase Shifter Using Stepped Impedance Open Stub and Coupled-Line With Weak Coupling

    Publication Year: 2014 , Page(s): 176 - 178
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (747 KB) |  | HTML iconHTML  

    This letter proposes a novel design approach of wideband 90 ° phase shifter, which comprises a stepped impedance open stub (SIOS) and a coupled-line with weak coupling. The result of analyses demonstrates that the bandwidths of return loss (RL) and phase deviation (PD) can be expanded by increasing the impedance ratio of the SIOS and the coupling strength of the coupled-line. For RL > 10 dB, insertion loss (IL) 1.1 dB, and PD of ±5°, the fabricated microstrip single-layer phase shifter exhibits bandwidth of 105% from 0.75 to 2.4 GHz. View full abstract»

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  • Ultra-Wide Locking Range Regenerative Frequency Dividers With Quadrature-Injection Current-Mode-Logic Loop Divider

    Publication Year: 2014 , Page(s): 179 - 181
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (860 KB) |  | HTML iconHTML  

    The ÷ 3 and ÷ 5 regenerative frequency dividers (RFDs) with ultra-wide locking ranges are presented. The proposed dividers were fabricated by a TSMC 90 nm CMOS process, using ÷ 2 and ÷ 4 quadrature-injected current-mode-logic loop dividers to widen the locking ranges. The dividers also achieved quadrature input and quadrature output. Using a 1.2 V supply voltage, the power consumptions of the ÷ 3 and the ÷ 5 divider cores were 10.2 and 14.8 mW, respectively. Without using the tuning techniques, the measured locking ranges for the ÷ 3 and the ÷ 5 dividers were from 9 to 14.7 GHz (48.1%) and 7.2 to 19 GHz (90.1%), respectively. The phase deviation of the quadrature outputs for the two dividers were less than 0.8 ° and 1.1 °. Compared with the reported data, the outstanding figure-of-merit values of the proposed ÷ 3 and ÷ 5 RFDs can be observed. View full abstract»

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  • A Compact Single Stage V-Band CMOS Injection-Locked Power Amplifier With 17.3% Efficiency

    Publication Year: 2014 , Page(s): 182 - 184
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (422 KB) |  | HTML iconHTML  

    This letter presents a fully integrated CMOS V-band injection-locked power amplifier (ILPA) for phase and frequency modulated millimeter-Wave (mm-Wave) transmitter. At mm-Wave frequency, multi-stage PAs are usually employed to achieve enough power gain due to low power gain of CMOS transistor even though it has low power efficiency. This work investigates mm-Wave ILPA for constant envelope modulation transmitter with high gain and high efficiency. The proposed ILPA has been implemented in 65 nm CMOS technology, a 17.3% Power Added Efficiency (PAE) and 9.6 dBm peak output power have been achieved with a single stage design in a compact size at 1.2 V supply voltage. View full abstract»

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  • Broadband Saturated Power Amplifier With Harmonic Control Circuits

    Publication Year: 2014 , Page(s): 185 - 187
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (852 KB) |  | HTML iconHTML  

    This letter presents a broadband saturated power amplifier (PA) using the harmonic control circuits for base station application. The saturated PA has advantages for broadband operation with high efficiency due to the large tolerance of the second harmonic tuning. However, it is difficult to simultaneously achieve the fundamental and second harmonic impedance matching across a wide bandwidth. To solve the problem, the harmonic control circuits are placed at the input and output of the device's die. These harmonic control circuits play a role of leading the second harmonic impedances to the optimum regions but are specially designed to be insensitive to the following fundamental matching circuit. The saturated PA with the harmonic control circuit is designed using a 120 W GaN device, achieving a high efficiency and wide bandwidth characteristics simultaneously. The measured output power, drain efficiency, and gain are at least 51.0 dBm, 71.0%, and 8.22 dB at the saturation across the 1.75 to 2.17 GHz (21% relative bandwidth) under pulse test (10% duty). This saturated PA also delivers good performances for long term evolution (LTE) and wideband code division multiple access (WCDMA) modulated signals at 1.85 and 2.14 GHz, respectively. These results show that the broadband saturated PA with the harmonic control circuit is suitable to wide bandwidth multimode/multiband applications. View full abstract»

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  • Characterization of Class-F Power Amplifier With Wide Amplitude and Phase Bandwidth for Outphasing Architecture

    Publication Year: 2014 , Page(s): 188 - 190
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (953 KB) |  | HTML iconHTML  

    A 2.14 GHz gallium nitride class-F power amplifier (PA) achieving both high efficiency and phase linearity over a wide frequency range is presented. The broadband PA is designed as one channel of outphasing architecture in cellular base-stations and analyzed in amplitude and phase domains. In amplitude domain, the PA exhibits measured maximum power added efficiency (PAE) of 80.1% with an output power of 40.7 dBm at 2 GHz. The PA achieves PAE higher than 55% over 500 MHz frequency range. The optimum second-harmonic load impedance enables the broadband operation. In phase domain, phase linearity of the PA is characterized by using phase modulation signals derived from single-carrier 10 MHz, two-carrier 40 MHz, and two-carrier 60 MHz long term evolution signals with 6.5 dB peak-to-average power ratio. View full abstract»

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  • Voltage Tunable Multiferroic Phase Shifter With YIG/PMN-PT Heterostructure

    Publication Year: 2014 , Page(s): 191 - 193
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (395 KB) |  | HTML iconHTML  

    Compact voltage tunable phase shifters on yttrium iron garnet/lead magnesium niobate lead titanate heterostructure are presented. A comparison of E-field tunability between 1-layer PMN-PT structure and two-layer PMN-PT structure using bending mode is discussed. The device exhibited a phase shift of 119 ° under an electric field of 11 kV/cm. The device combining with multiferroics and partially magnetized ferrite concepts is able to operate with the absence of external bias magnetic field. It is more compact and power efficient than traditional multiferroic devices. View full abstract»

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  • A Doherty Power Amplifier With a GaN MMIC for Femtocell Base Stations

    Publication Year: 2014 , Page(s): 194 - 196
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (594 KB) |  | HTML iconHTML  

    A Doherty Power Amplifier (PA) with the proposed GaN MMIC for femtocell base stations is presented. The MMIC was fabricated using a 0.25 μm TriQuint GaN process. An on-chip quadrature coupler based on a lumped magnetic coupler with capacitors was used to reduce the chip size. The MMIC with an area of 2.5 × 2.7 mm2 includes an input matching circuit, a driver transistor, carrier and peak transistors at power stage, and an inter-stage matching network with the quadrature coupler. The Doherty PA with MMIC shows 56.2% power added efficiency (PAE) with a gain of 19.7 dB when the output power is 41.2 dBm for a 2.14 GHz CW signal. For a down link WCDMA signal, the PAE of 39.6% is achieved at an output power of 35.3 dBm. The Doherty PA with the MMIC presented here has a small effective module area of 7 × 15 mm2, which can be readily reduced further. View full abstract»

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  • A Broadband Inductorless Active Power Divider for 10 Gbps High Speed Transmissions

    Publication Year: 2014 , Page(s): 197 - 199
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (761 KB) |  | HTML iconHTML  

    A broadband and compact inductorless active power divider is presented in this letter. By using the Darlington cell, the proposed monolithic active power divider demonstrates broad and flat bandwidth of output 1 dB compression point over the 3 dB bandwidth. The gain-bandwidth performance, input matching, and device ratio of the Darlington cell are presented to achieve broad bandwidth. The proposed active power divider exhibits a potential for the high speed transmissions due to its broad bandwidth, low amplitude/phase errors, low and flat group delay. View full abstract»

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  • High-Performance Wideband Low-Noise Amplifier Using Enhanced \pi -Match Input Network

    Publication Year: 2014 , Page(s): 200 - 202
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (863 KB) |  | HTML iconHTML  

    A low noise-figure (NF) and high power gain (S21) 3 ~ 10 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity using 0.18 μm CMOS technology is reported. An enhanced π-match input network is used to achieve wideband input impedance matching as well as high and flat S21. To achieve low and flat NF, the pole frequency and pole quality factor of the second-order NF frequency response are tuned to approximate the maximally flat condition. The LNA consumes 18 mW, achieving S11 better than -10 dB for frequency lower than 12.2 GHz and group-delay (GD) variation smaller than ±14.6 ps for frequencies 3 ~ 10 GHz. Additionally, high and flat S21 of 13.7 ± 1.5 dB is achieved for frequencies 1 ~ 12.5 GHz, which means the corresponding 3-dB bandwidth is 11.5 GHz. Furthermore, the LNA achieves minimum NF of 2.2 dB at 4 GHz and NF of 2.3 ± 0.1 dB for frequencies of 3 ~ 10 GHz, one of the best NF results ever reported for a 3 ~ 10 GHz CMOS LNA. View full abstract»

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  • A Nonlinear Filter-Based Volterra Model With Low Complexity for Wideband Power Amplifiers

    Publication Year: 2014 , Page(s): 203 - 205
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (562 KB) |  | HTML iconHTML  

    A nonlinear filter-based Volterra model with low complexity is proposed for modeling and characterizing wideband power amplifiers. This model has a similar form of a simplified second-order dynamic deviation reduction (DDR)-based Volterra model but without complex square root calculations and high order terms, which are replaced by a first-order nonlinear filter. The model parameters with smaller magnitude distribution range and lower precision in storing and calculation can be estimated by least-square method, and then the model has lower complexity than the second-order simplified DDR Volterra model. Experimental results verified that good performance and lower complexity can be achieved by using this model for a wideband Doherty power amplifier. Finally, the model is employed to compensate the nonlinearity of the Doherty power amplifier, and over 12 dB adjacent channel leakage ratio (ACLR) improvement is achieved for a five-carrier long-term evolution advanced (LTE-A) signal of 100 MHz bandwidth. View full abstract»

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Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope