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Electron Devices Society, IEEE Journal of the This IEEE Publication is an Open Access only journal. Open Access provides unrestricted online access to peer-reviewed journal articles.

Issue 11 • Date Nov. 2013

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  • Table of contents

    Publication Year: 2013 , Page(s): C1
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    Freely Available from IEEE
  • IEEE Journal of the Electron Devices Society publication information

    Publication Year: 2013 , Page(s): C2
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  • A Flexible 0.18 \mu{\rm m} BiCMOS Technology Suitable for Various Applications

    Publication Year: 2013 , Page(s): 181 - 190
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (17933 KB) |  | HTML iconHTML  

    Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere with each other. Low-thermal-budget SiGe HBT formation is achieved using a minimal-moisture-desorption oxide ... View full abstract»

    Open Access
  • IEEE Journal of the Electron Devices Society information for authors

    Publication Year: 2013 , Page(s): C3
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    Freely Available from IEEE

Aims & Scope

The IEEE Journal of the Electron Devices Society (J-EDS) is an open access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices.

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Editor-In-Chief
Dr. Renuka P. Jindal