# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 43

Publication Year: 2014, Page(s):C1 - C4
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2014, Page(s): C2
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• ### A Warm Welcome to a New T-ED Editor

Publication Year: 2014, Page(s): 1
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• ### A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation

Publication Year: 2014, Page(s):2 - 7
Cited by:  Papers (11)
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A bandgap-engineered silicon-germanium biristor for low-voltage operation is investigated through numerical simulations. A reduced latch-up voltage is achieved using germanium as a base, and improved hysteresis is attained by adopting a hetero-bandgap structure which harnesses the silicon-germanium composite at the collector/emitter. The geometric parameters of the base length and base diameter ar... View full abstract»

• ### Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits

Publication Year: 2014, Page(s):8 - 14
Cited by:  Papers (4)
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We investigated the characteristic variation of an integrated thin-film resistor (TFR), which is composed of silicon chromium (SiCr), according to process conditions and its effects on analog circuits. To improve TFR properties, such as temperature coefficient of resistance (TCR) and mismatch, the integrated TFR was examined under various process conditions. First, the sputtering power and the ann... View full abstract»

• ### A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability

Publication Year: 2014, Page(s):15 - 22
Cited by:  Papers (33)
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In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling conditions was examined. The electrical resistance of TSV daisy chains was found to increase with the number of thermal cycles, due to thermally induced damage leading to the formation and growth of defects. The contributions of each identified damage type to the change in the electrical resistance of th... View full abstract»

• ### A Computational Study on the Electronic Transport Properties of Ultranarrow Disordered Zigzag Graphene Nanoribbons

Publication Year: 2014, Page(s):23 - 29
Cited by:  Papers (8)
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In this paper, the effect of structural nonidealities on the electronic transport properties of ultranarrow zigzag graphene nanoribbons (ZGNRs) is systemically investigated for the first time, employing the nonorthogonal third nearest neighbor mean-field Hubbard model along with the nonequilibrium Green's function formalism. We have evaluated the influence of line-edge roughness, single atom vacan... View full abstract»

• ### Effect of Load Capacitance and Input Transition Time on FinFET Inverter Capacitances

Publication Year: 2014, Page(s):30 - 36
Cited by:  Papers (6)
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FinFETs are poised to replace conventional MOSFETs at sub-22-nm technology nodes mainly due to their relatively planar compatible fabrication process. It is well known that FinFET device parasitics are critical for the propagation delay and power dissipation. However, a quantitative understanding of device parasitics for circuit design is yet to be attained. We report a new extension transistor-in... View full abstract»

• ### p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices

Publication Year: 2014, Page(s):37 - 43
Cited by:  Papers (11)
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We investigate the performance of Ge and Si channel p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-pMOSFETs) based on rigorous quantum mechanical calculations. The multiband k·p method and the nonequilibrium Green's function are used. We find that Ge SB-pMOSFETs show superior performance in terms of ON-state current (ION), subthreshold swing, and the... View full abstract»

• ### Multiple Turn Ratios of On-Chip Transformer With Four Intertwining Coils

Publication Year: 2014, Page(s):44 - 47
Cited by:  Papers (5)
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This paper develops an on-chip transformer in which four coils are entwined tightly within a limited area. The proposed device has a total of six possible turn ratios. The flexibility of the turn ratio facilitates the convenient merging of two transformers with the RF design in a device area. To demonstrate the proposed device, seven devices are fabricated using 90-nm CMOS technology. Measurements... View full abstract»

• ### An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices

Publication Year: 2014, Page(s):48 - 53
Cited by:  Papers (13)
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We present a general simulation framework for assessing the performance of nanoscale devices that combines several powerful and widely used open-source codes, and based on minimal but chemically accurate tight-binding Hamiltonians obtained from density-functional theory calculations and using maximally localized Wannier functions to represent the electronic state. Transport properties are then com... View full abstract»

• ### Statistical SBD Modeling and Characterization and Its Impact on SRAM Cells

Publication Year: 2014, Page(s):54 - 59
Cited by:  Papers (3)
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In this paper, we present a physics-based SPICE model for statistical soft breakdown (SBD) in ultrathin oxide. Statistical SBD induces an increase in gate leakage current (IG_BD) based on the time to breakdown (tBD) and the location of the percolation path in the channel. The proposed model has been validated with experimental data, and fed into circuit simulators to predict the degradation of dev... View full abstract»

• ### Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

Publication Year: 2014, Page(s):60 - 65
Cited by:  Papers (5)
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4F2 multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor. View full abstract»

• ### nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits

Publication Year: 2014, Page(s):66 - 72
Cited by:  Papers (1)
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The currents in all N-channel field effect transistor device terminals can be severely degraded when a soft breakdown event occurs from gate-to-drain. These effects become more pronounced for shorter channel lengths. We present a methodology for separating the effects of mobility degradation and threshold voltage shift on post breakdown device characteristics. Using an accurate equivalent circuit ... View full abstract»

• ### Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Publication Year: 2014, Page(s):73 - 78
Cited by:  Papers (28)
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The effect of Hf addition on the electrical performance and bias stability of ZnO-based thin-film transistors (TFTs) has been investigated. All channel layers were deposited by atomic layer deposition with various Hf contents. In addition, multilayer oxide channel TFTs consisting of two or three Hf-doped ZnO (HZO) and ZnO layers were developed for the realization of adequate channel mobility and e... View full abstract»

• ### Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

Publication Year: 2014, Page(s):79 - 86
Cited by:  Papers (5)
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An In-Ga-O (IGO) semiconductor was employed as a channel layer for the oxide thin-film transistors (TFTs). The IGO composition was chosen as an In/Ga atomic ratio of 65/35 and the films were deposited by RF magnetron sputtering method. To investigate the negative-bias illumination stress (NBIS) instability mechanisms, the IGO films were prepared with various oxygen partial pressures (O2... View full abstract»

• ### Comparison of High-$kappa~{rm Gd}_{2}{rm O}_{3}$ and ${rm GdTiO}_{3}~alpha$-InGaZnO Thin-Film Transistors

Publication Year: 2014, Page(s):87 - 91
Cited by:  Papers (12)
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In this paper, we compared the structural and electrical properties of high- κ Gd2O3 and GdTiO3 gate dielectrics for an amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) application. In comparison with the Gd2O3 dielectric, the α-IGZO TFT featuring the GdTiO3 dielectric exhibited better el... View full abstract»

• ### Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

Publication Year: 2014, Page(s):92 - 97
Cited by:  Papers (16)
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The electronic properties of amorphous indium-zinc-oxide (IZO) thin film transistors (TFTs) with back-channel-etch (BCE) structure was investigated. In the cyclic-transfer characteristics test, the initial transfer curve of BCE-type transistors exhibited a significant hysteresis phenomenon under a high-gate bias (VGS). However, in the following cycles of the transfer curves, the hystere... View full abstract»

• ### Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors

Publication Year: 2014, Page(s):98 - 104
Cited by:  Papers (16)
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This paper presents analysis of the charge storage behavior in organic thin-film transistors (OTFTs) by means of admittance characterization, compact modeling, and 2-D device simulation. The measurements are performed for frequencies ranging from 100 Hz to 1 MHz and bias potentials from zero to -3 V on top-contact OTFTs that employ air-stable and high-mobility dinaphtho-thieno-thiophene as the org... View full abstract»

• ### Analysis of Thermal Resistance Characteristics of Power LED Module

Publication Year: 2014, Page(s):105 - 109
Cited by:  Papers (3)
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Multichip LED arrays are widely used for lighting to provide high luminance. Luminous efficacy, lifetime, and color temperature are highly dependent on the temperature at p-n junction. This paper investigated the effects of distance, number of chips, and driving current on the thermal resistance of LED module. Thermal resistance dramatically increased as the distance between LED chips decreased du... View full abstract»

• ### A Statistical Model for Signal-Dependent Charge Sharing in Image Sensors

Publication Year: 2014, Page(s):110 - 115
Cited by:  Papers (3)
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A Monte Carlo model based on the signal-dependent charge sharing mechanism during charge collection has been developed to explain the nonlinearity of the photon transfer curve (PTC) in image sensors. The model is based on tracing of individual electrons generated by Poisson-distributed photons and describes the PTC nonlinearity as a process with sub-Poisson variance, with an excellent qualitative ... View full abstract»

• ### High-Density Capacitor Devices Based on Macroporous Silicon and Metal Electroplating

Publication Year: 2014, Page(s):116 - 122
Cited by:  Papers (5)
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This paper presents a novel technique for the fabrication of ultrahigh capacitance structures based on macroporous silicon. Electrochemical etching is used to create a 3-D template in silicon. These structures reach high specific capacitances and can be incorporated into integrated circuits. Very low series resistance is attained using a metal electrode. The fabrication technology uses standard UV... View full abstract»

• ### A Dual-Material Gate Junctionless Transistor With High- $k$ Spacer for Enhanced Analog Performance

Publication Year: 2014, Page(s):123 - 128
Cited by:  Papers (35)
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In this paper, we present a simulation study of analog circuit performance parameters for a symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with high- k spacer dielectric (DMG-SP) on both sides of the gate oxides of the device. The characteristics are demonstrated and compared with DMG DGJLT and single-material (conventional) gate (SMG) DGJLT. The DMG DGJLT pre... View full abstract»

• ### A Prototype of Piezoresistive Fringe-Electrodes-Element Based on Conductive Polymer Composite

Publication Year: 2014, Page(s):129 - 135
Cited by:  Papers (12)
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To improve the softness of the piezoresistive element based on conductive polymer composite, a prototype of fringe-electrodes-element is designed and investigated. The fringe-electrodes-element encompasses the pressure sensitive part, the connection part, and the interface part. Different from the traditional sandwich element, the pressure sensitive part of the fringe-electrodes-element has no ele... View full abstract»

• ### High-Sensitivity Charge-Transfer-Type pH Sensor With Quasi-Signal Removal Structure

Publication Year: 2014, Page(s):136 - 140
Cited by:  Papers (6)
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Charge-transfer-type pH sensors can be used to improve pH sensitivity with enhanced signal-to-noise ratio by applying the charge-accumulation technique. Theoretically, the pH sensitivity improves directly with the accumulated count. However, in a conventional sensor structure, a quasi-signal resulting from low charge transfer efficiency limits the accumulated count. In this paper, an effective sol... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy