By Topic

Display Technology, Journal of

Issue 11 • Date Nov. 2013

Filter Results

Displaying Results 1 - 20 of 20
  • [Front cover]

    Publication Year: 2013 , Page(s): C1
    Save to Project icon | Request Permissions | PDF file iconPDF (343 KB)  
    Freely Available from IEEE
  • Journal of Display Technology publication information

    Publication Year: 2013 , Page(s): C2
    Save to Project icon | Request Permissions | PDF file iconPDF (136 KB)  
    Freely Available from IEEE
  • Table of contents

    Publication Year: 2013 , Page(s): 863
    Save to Project icon | Request Permissions | PDF file iconPDF (157 KB)  
    Freely Available from IEEE
  • [Blank page]

    Publication Year: 2013 , Page(s): B864
    Save to Project icon | Request Permissions | PDF file iconPDF (5 KB)  
    Freely Available from IEEE
  • Drift-Diffusion Analysis of Current Crowding Mechanism: Current-Dependent Series Resistance

    Publication Year: 2013 , Page(s): 865 - 870
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1378 KB) |  | HTML iconHTML  

    The current crowding mechanism is crucial in the modeling of the series resistance in staggered thin-film transistors, giving the first idea about the current distribution at the overlap region. However, the model for this mechanism neglects the diffusion phenomenon and is limited to small drain-voltage condition. In this paper, by using theoretical analysis and simulations, we introduce a drift-diffusion approach into the interpretation of the current crowding mechanism, pointing out the dependence of the series resistance not only on the gate-voltage but also on the current magnitude. In addition, we compare the series resistance at the source and at the drain, remarking the origin of their difference. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Dynamic and Transient Analysis of Silicon-Based Thin-Film Transistors: Channel Propagation Model

    Publication Year: 2013 , Page(s): 871 - 876
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1364 KB) |  | HTML iconHTML  

    The quasi-static approach in the dynamic modeling considers that a thin-film transistor (TFT) reaches the steady-state instantaneously, and how to insert its behavior before steady-state is an important issue. In this paper, dynamic responses of silicon-based TFTs under gate-voltage pulse are studied in details. We experimentally distinguish quasi-static and non-quasi-static cases and we identify two charging regimes of the channel formation: channel propagation and charging of the fully propagated channel. We propose a model for the channel propagation, with a compact model-like approach to take into account the effect of defect states. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Simulating the Electrical Characteristics of Organic TFTs Prepared by Vacuum Processing

    Publication Year: 2013 , Page(s): 877 - 882
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1334 KB) |  | HTML iconHTML  

    An all-vacuum evaporated approach to the roll-to-roll (R2R) fabrication of organic electronic circuits is being developed for potential applications in, for example, display backplanes and integrated security tagging for packaging. As part of an on-going development process, we are now addressing the question of circuit design and simulation. Here we describe the first step in this process, namely the extraction of parameters from experimentally-obtained output and transfer characteristics of vacuum produced, thin film transistors based on the organic semiconductors pentacene and dinaphtho[2,3-b:2'3'-f]thieno[3,2-b]thiophene (DNTT). For this we use Silvaco's Universal Thin Film Transistor (UOTFT) Model (Level=37) so that the extracted parameters may be used directly with Silvaco's Gateway circuit simulation software. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Modeling Sub-Threshold Current–Voltage Characteristics in Thin Film Transistors

    Publication Year: 2013 , Page(s): 883 - 889
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1869 KB) |  | HTML iconHTML  

    In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Parameter Extraction and Evaluation of UOTFT Model for Organic Thin-Film Transistor Circuit Design

    Publication Year: 2013 , Page(s): 890 - 894
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1023 KB) |  | HTML iconHTML  

    In this paper, we report a systematic approach to extract parameters from organic thin film transistors (OTFTs) that are used for compact Spice models. The universal organic thin-film transistor (UOTFT) model and Silvaco's Smartspice platform are utilized for simulations whereas experimental data are collected from Plastic Logic's (PL) thin-film transistors that are processed on flexible plastic substrates. The parameter extraction procedure is outlined where both current-voltage and capacitance-voltage measurements are employed. This is then followed by simulations of inverters and ring oscillators to assess the results against simple logic circuits. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • GaN-Based Ultraviolet Light Emitting Diodes With Ex Situ Sputtered AlN Nucleation Layer

    Publication Year: 2013 , Page(s): 895 - 899
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (920 KB) |  | HTML iconHTML  

    We demonstrated the electro-optical characteristics of gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs) with sputtered aluminum nitride (AlN) nucleation layer. The introduction of the ex situ sputtered AlN nucleation layer improved the crystal quality of the GaN and the n-AlGaN layer of the GaN-based UV LEDs. Hence, the 20-mA output power of UV LEDs with ex situ AlN nucleation layers is higher than that of UV LEDs with GaN nucleation layers. In addition, the enhanced power output of UV LEDs with ex situ AlN nucleation could reach around 52% in magnitude at peak emission wavelengths of 370 nm compared with power outputs of UV LEDs with GaN nucleation layers. Furthermore, UV LEDs with ex situ AlN nucleation show improved reliability. The UV LEDs with ex situ AlN nucleation layer revealed a power output drop of around 9% within 168 hours , which is less than the around 14% power drop of UV LEDs with GaN nucleation layer. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Outcoupling Enhancement of OLEDs With a Randomly Distributed ITO Pattern Fabricated by Maskless Wet Etching Method

    Publication Year: 2013 , Page(s): 900 - 903
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (685 KB) |  | HTML iconHTML  

    To outcouple the photons trapped in OLEDs, the effect of a rough ITO surface is investigated. The rough surface is obtained by simple maskless wet etching producing a randomly distributed nano-pattern. The power efficiency is improved by 54%, and further enhanced to 83% with a microlens array. As the pattern located between the organic layer and the ITO anode overlaps strongly with the guided mode, it results in a strong scattering rather than the diffraction, so that the device produces no angular dependence or spectral shift. Electrical property and the lifetime of the device are not affected by the etched ITO. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Automatic Digital Hologram Denoising by Spatiotemporal Analysis of Pixel-Wise Statistics

    Publication Year: 2013 , Page(s): 904 - 909
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1954 KB) |  | HTML iconHTML  

    In this paper, a new technique to reduce the noise in a reconstructed hologram image is proposed. Unlike all the techniques in the literature, the proposed approach not only takes into account spatial information but also temporal statistics associated with the pixels. This innovative solution enables, at first, the automatic detection of the areas of the image containing the objects (foreground). This way, all the pixels not belonging to any objects are directly cleaned up and the contrast between objects and background is consistently increased. The remaining pixels are then processed with a spatio-temporal filtering which cancels out the effects of speckle noise, while preserving the structural details of the objects. The proposed approach has been compared with other common speckle denoising techniques and it is found to give better both visual and quantitative results. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer

    Publication Year: 2013 , Page(s): 910 - 914
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (815 KB) |  | HTML iconHTML  

    An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An Investigation of the Optical Analysis in White Light-Emitting Diodes With Conformal and Remote Phosphor Structure

    Publication Year: 2013 , Page(s): 915 - 920
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (888 KB) |  | HTML iconHTML  

    An effective emission model of phosphor film is proposed by using bidirectional scattering distribution function system (BSDF), and the model is verified by white light-emitting diodes (LEDs) with conformal and remote phosphor structure. The emission model is built to clarify the optical characteristics by analyzing the angular-dependent distribution of emission and excitation behaviors in phosphor film. The white LEDs with conformal and remote phosphor structure are also fabricated for experimental comparison. The uniformity of angular correlated color temperature (CCT) in white LEDs can be determined by the angular distribution of blue and yellow light, which is in turns decided by the refractive index variation between chip a©nd phosphor layers. Finally, the experimental results are found to have good agreement with the simulation results performing by the Monte Carlo method. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Three-Dimensional Virtual Touch Display System for Multi-User Applications

    Publication Year: 2013 , Page(s): 921 - 928
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1623 KB) |  | HTML iconHTML  

    By embedding optical sensors onto a TFT substrate in a display, a flat panel can sense images projected by infrared (IR) light. Light pens which can project Multi- T-mark including out-mark and in-mark of IR images were utilized to calculate the 3-axis information ( x, y, and z) of the tip of the light-pen and achieve accurate user identification accordingly. Therefore, a 3-dimensional virtual touch display for 3-axis information with multi-user/multi-touch system can be achieved. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Blank page]

    Publication Year: 2013 , Page(s): B929 - B930
    Save to Project icon | Request Permissions | PDF file iconPDF (6 KB)  
    Freely Available from IEEE
  • IEEE Open Access Publishing

    Publication Year: 2013 , Page(s): 931
    Save to Project icon | Request Permissions | PDF file iconPDF (1155 KB)  
    Freely Available from IEEE
  • IEEE Xplore Digital Library

    Publication Year: 2013 , Page(s): 932
    Save to Project icon | Request Permissions | PDF file iconPDF (1792 KB)  
    Freely Available from IEEE
  • Journal of Display Technology information for authors

    Publication Year: 2013 , Page(s): C3
    Save to Project icon | Request Permissions | PDF file iconPDF (120 KB)  
    Freely Available from IEEE
  • [Blank page - back cover]

    Publication Year: 2013 , Page(s): C4
    Save to Project icon | Request Permissions | PDF file iconPDF (5 KB)  
    Freely Available from IEEE

Aims & Scope

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Arokia Nathan
University of Cambridge
Cambridge, U.K.