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Proceedings of the IEEE

Issue 10 • Date Oct. 2013

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Displaying Results 1 - 24 of 24
  • Front cover

    Publication Year: 2013, Page(s): C1
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  • Proceedings of the IEEE publication information

    Publication Year: 2013, Page(s): C2
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  • Table of Contents

    Publication Year: 2013, Page(s):2145 - 2146
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  • The Reasonable Ineffectiveness of Mathematics [Point of View]

    Publication Year: 2013, Page(s):2147 - 2153
    Cited by:  Papers (1)
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  • 50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue]

    Publication Year: 2013, Page(s):2154 - 2157
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  • The III–V Alloy p–n Diode Laser and LED Ultimate Lamp

    Publication Year: 2013, Page(s):2158 - 2169
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1057 KB) | HTML iconHTML

    In this paper, an account is presented of the semiconductor, because of the energy gap bipolar with electron (e) and hole (h) conductivity, becoming ingeniously with little or no technology (Bardeen and Brattain, Dec. 1947) the transistor, a triode (at first just a germanium “base” crystal and a point contact “emitter” and “collector”), a low impedance &#x... View full abstract»

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  • From Holonyak to Today

    Publication Year: 2013, Page(s):2170 - 2175
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (705 KB) | HTML iconHTML

    The demonstration of direct bandgap alloy semiconductor (GaAsP) visible (red) emitters by Nick Holonyak at General Electric in 1962 began the evolution of high-brightness LED technology. Today, high-brightness LEDs are a growing $12 billion business with applications which include traffic signals, automobiles, camera flash, display backlighting, and general illumination. This paper will discuss th... View full abstract»

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  • Heterostructures for Optoelectronics: History and Modern Trends

    Publication Year: 2013, Page(s):2176 - 2182
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (401 KB) | HTML iconHTML

    Semiconductor revolution of the 20th century determined not only technological, but also social development of the modern society. The precursors of modern semiconductor electronics were Oleg Losev's discoveries of “crystadine” and “light-emitting diode (LED)” nearly 100 years ago. Creation of the transistor and semiconductor laser and LED based on the homo p-n structur... View full abstract»

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  • The Double-Heterostructure Concept: How It Got Started

    Publication Year: 2013, Page(s):2183 - 2187
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    The double-heterostructure (DH) concept for lasers and light-emitting diodes (LEDs) grew out of the prelaser context of increasing the speed of the early bipolar junction transistors. The 1954 idea was to change the energy gap itself, with a graded-gap base, or a wide-gap emitter. This led to the 1957 more general concept of quasi-electric fields and potentials in structures with a position-depend... View full abstract»

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  • III–V Semiconductor Quantum-Well Devices Grown by Metalorganic Chemical Vapor Deposition

    Publication Year: 2013, Page(s):2188 - 2199
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (750 KB) | HTML iconHTML

    The metalorganic chemical vapor deposition (MOCVD) technology for the growth of III-V compound semiconductors has been developed over the past 40+ years to become the dominant epitaxial materials technology for both research and production of light-emitting devices as well as many other optoelectronic devices. Because of the flexibility and control offered by this process, and the material quality... View full abstract»

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  • GaN-Based p–n Junction Blue-Light-Emitting Devices

    Publication Year: 2013, Page(s):2200 - 2210
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (777 KB) | HTML iconHTML

    Drastic improvements in the crystal quality of GaN enabled the conductivity control of both p- and n-type nitride semiconductors. This led the production of the high-brightness GaN-based p-n junction blue-light-emitting diode (LED) and the high-performance violet/blue laser diode (LD). The development of blue LEDs has allowed us to complete the set of three primary light colors with semiconductors... View full abstract»

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  • History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

    Publication Year: 2013, Page(s):2211 - 2220
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (963 KB) | HTML iconHTML

    The history of development for gallium-nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, which... View full abstract»

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  • GaN Substrate Technologies for Optical Devices

    Publication Year: 2013, Page(s):2221 - 2228
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    Large GaN single-crystal substrates with low dislocation density are the key materials for the commercial production of GaN-based laser diodes. We developed a new method to reduce the dislocations, named dislocation elimination by the epitaxial-growth with inverse-pyramidal pits (DEEP). A thick GaN film is epitaxially grown on a GaAs substrate with hydride vapor-phase epitaxy and then is separated... View full abstract»

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  • Vertical-Cavity Surface-Emitting Laser (VCSEL)

    Publication Year: 2013, Page(s):2229 - 2233
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1192 KB) | HTML iconHTML

    The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultraparallel data transfer in equipment and computer systems, including storage area networks (SANs) and wide optoelectronics fields. In this paper, we will review its physics and the progress of technology co... View full abstract»

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  • III–V Oxidation: Discoveries and Applications in Vertical-Cavity Surface-Emitting Lasers

    Publication Year: 2013, Page(s):2234 - 2242
    Cited by:  Papers (2)
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    Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made, both technically and commercially, on the use of oxides in compound semiconductor devices. The process-induced modification of refractive index and conductivity allows control of the two carriers of information in optoelectronic systems, the photon and the electron, enabling wide-ranging ... View full abstract»

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  • Application of Laser Diodes to Optical Disk Systems: The History of Laser Diode Development and Mass Production in Three Generations of Optical Disk Systems

    Publication Year: 2013, Page(s):2243 - 2254
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1637 KB) | HTML iconHTML

    Twenty years after Dr. Holonyak's invention, a compact disc (CD) was introduced to the market in 1982. A laser diode is always in the heart of optical storage systems and a variety of other industrial applications. Innovations in laser diode technologies have brought optical storage evolutions from CD to digital versatile disc (DVD) and then Blu-ray disc (BD) every ten years. Since the most import... View full abstract»

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  • From Visible Light-Emitting Diodes to Large-Scale III–V Photonic Integrated Circuits

    Publication Year: 2013, Page(s):2255 - 2270
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2974 KB) | HTML iconHTML

    The discovery of the visible light-emitting diode (LED) 50 years ago by Holonyak and Bevacqua and the associated demonstration of the viability of the III-V semiconductor alloy created a foundational basis for the field of optoelectronics. Key advances which enabled the progression from the first visible LED to today's III-V photonic integrated circuits (PICs) are described. Furthermore, the curre... View full abstract»

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  • The Transistor Laser: Theory and Experiment

    Publication Year: 2013, Page(s):2271 - 2298
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4353 KB) | HTML iconHTML

    The quantum-well (QW) heterojunction bipolar transistor (HBT) laser [the transistor laser (TL)], inherently a fast switching device, operates by transporting small minority base charge densities ~1016 cm-3 over nanoscale base thickness ( 900 A) in picoseconds. The base QW acts as an optical “collector,” in addition to the usual electrical collector, that selects... View full abstract»

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  • STARS: Electromechanical Telephone Switching [Scanning Our Past]

    Publication Year: 2013, Page(s):2299 - 2305
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1679 KB) | HTML iconHTML

    This month we continue a series of reprints from the IEEE Global History Network's STARS articles.1 STARS is an online compendium of invited, peer-reviewed articles on the history of major developments in electrical and computer science and technology. Some light editing has been done, along with the addition of a few illustrations, to make the article more suitable for a journal publication. View full abstract»

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  • Future Special Issues/Special Sections of the Proceedings

    Publication Year: 2013, Page(s): 2306
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  • Open Access

    Publication Year: 2013, Page(s): 2307
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  • Technology insight on demand on IEEE.tv

    Publication Year: 2013, Page(s): 2308
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  • IEEE Global History Network

    Publication Year: 2013, Page(s): C3
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  • [Back cover]

    Publication Year: 2013, Page(s): C4
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The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics.

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Meet Our Editors

Editor-in-Chief
H. Joel Trussell
North Carolina State University