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Electron Devices Society, IEEE Journal of the This IEEE Publication is an Open Access only journal. Open Access provides unrestricted online access to peer-reviewed journal articles.

Issue 4 • Date April 2013

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Displaying Results 1 - 6 of 6
  • Table of contents

    Publication Year: 2013 , Page(s): C1
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    Freely Available from IEEE
  • IEEE Journal of the Electron Devices Society publication information

    Publication Year: 2013 , Page(s): C2
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  • Take advantage of your IEEE EDS membership

    Publication Year: 2013 , Page(s): 91
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  • A Technique to Improve the Performance of an NPN HBT on Thin-Film SOI

    Publication Year: 2013 , Page(s): 92 - 98
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (7211 KB) |  | HTML iconHTML  

    The performance of an npn SiGe HBT on thin-film silicon on insulator (SOI) is investigated using 2-D numerical simulation. A technique of using N+ buried layer has been presented to improve the performance of an SiGe HBT on thin-film SOI. The tradeoff in the performance of HBT has been observed and the results are compared to the standard SOI HBT. The HBT offers better βVA product at high collector currents. A 341 GHzV of ftBVCEO product can be obtained by using this technique. The scalability of film thickness is applied and the enhancement in the speed is observed. The self-heating performance of the proposed HBT is studied and the BOX thickness has been scaled to improve the thermal performance. The maximum lattice temperature is obtained. The proposed HBT is suitable for RF applications and can be used in addition to the existing 130 nm SOI CMOS technology for better performance. View full abstract»

    Open Access
  • Discrimination of Photon- and Dark-Initiated Signals in Multiple Gain Stage APD Photoreceivers

    Publication Year: 2013 , Page(s): 99 - 110
    Cited by:  Papers (1)
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (11685 KB) |  | HTML iconHTML  

    We demonstrate the ability of linear mode single carrier multiplication (SCM) avalanche photodiode (APD)-based optical receivers to discriminate single-photon-initiated avalanche events from dark-current-initiated events. Because of their random spatial origin in discrete regions of the depletion region, in the SCM APD the dark-generated carriers multiply differently than the photon-generated carriers. This causes different count distributions and necessitates different statistical descriptions of the signal contributions from photon- and dark-originating impulse responses. To include dark carriers in the performance models of the SCM APD, we considered the influence of the spatial origin of the ionization chains on a receiver's noise performance over the times the optical pulse is integrated by the receiver's decision circuits. We compare instantaneous (time-resolved) numeric and pseudo-DC analytical models to measured SCM APD data. It is shown that it is necessary to consider both the distribution of spatial origin and the instantaneous properties of the ionization chains to describe statistically an SCM APD receiver. The ability of SCM APD receivers to discriminate single photon events from single dark events is demonstrated, and the effective gain and excess noise contributions of the light- and dark-initiated avalanche events and their influence on receiver sensitivity and signal-to-noise characteristics are shown. View full abstract»

    Open Access
  • IEEE Journal of the Electron Devices Society information for authors

    Publication Year: 2013 , Page(s): C3
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Aims & Scope

The IEEE Journal of the Electron Devices Society (J-EDS) is an open access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices.

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Dr. Renuka P. Jindal