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# IEEE Transactions on Microwave Theory and Techniques

## Issue 5  Part 1 • May 2013

This issue contains several parts.Go to:  Part 2

## Filter Results

Displaying Results 1 - 25 of 30

Publication Year: 2013, Page(s):C1 - C4
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• ### IEEE Transactions on Microwave Theory and Techniques publication information

Publication Year: 2013, Page(s): C2
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• ### Parametric Modeling of Microwave Passive Components Using Sensitivity-Analysis-Based Adjoint Neural-Network Technique

Publication Year: 2013, Page(s):1733 - 1747
Cited by:  Papers (8)
| | PDF (3513 KB) | HTML

This paper presents a novel sensitivity-analysis-based adjoint neural-network (SAANN) technique to develop parametric models of microwave passive components. This technique allows robust parametric model development by learning not only the input-output behavior of the modeling problem, but also derivatives obtained from electromagnetic (EM) sensitivity analysis. A novel derivation is introduced t... View full abstract»

• ### Modeling Local Via Structures Using Innovative PEEC Formulation Based on Cavity Green's Functions With Wave Port Excitation

Publication Year: 2013, Page(s):1748 - 1757
Cited by:  Papers (5)
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Complex via structures such as noncircular antipads are rigorously studied, in the local region close to vias, using an innovative partial-element equivalent-circuit (PEEC) formulation based on the cavity Green's functions. The problem under study is an essential building block that can be used to model complex multilayer structures. With the usage of the cavity Green's functions, the number of un... View full abstract»

• ### A Two-Step Perturbation Technique for Nonuniform Single and Differential Lines

Publication Year: 2013, Page(s):1758 - 1767
Cited by:  Papers (6)
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A novel two-step perturbation technique to analyze nonuniform single and differential transmission lines in the frequency domain is presented. Here, nonuniformities are considered as perturbations with respect to a nominal uniform line, allowing an interconnect designer to easily see what the effect of (unwanted) perturbations might be. Based on the Telegrapher's equations, the proposed approach y... View full abstract»

• ### Wideband Microstrip Coupled-Line Ring Hybrids for High Power-Division Ratios

Publication Year: 2013, Page(s):1768 - 1780
Cited by:  Papers (11)
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Wideband coupled-line ring hybrids are presented for high power-division ratios. For this, an equivalent circuit to make the characteristic impedance of a transmission-line section lower is firstly investigated, based on a Π-type lumped-element equivalent circuits. Design formulas of four types of equivalent circuits (LΠ-, LT-, LS2-, and LS1-typ... View full abstract»

• ### Circular Sector Patch Hybrid Coupler With an Arbitrary Coupling Coefficient and Phase Difference

Publication Year: 2013, Page(s):1781 - 1792
Cited by:  Papers (13)
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This paper presents, for the first time, a patch coupler configuration that can be designed with an arbitrary coupling coefficient and phase difference at the output ports. Four circular sector patches are combined to form the patch coupler resulting in ease of design and fabrication. To demonstrate and verify this, a patch quadrature coupler configuration is proposed to realize a wide range of co... View full abstract»

• ### Compact Continuously Tunable Microstrip Low-Pass Filter

Publication Year: 2013, Page(s):1793 - 1800
Cited by:  Papers (5)
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A compact continuously varactor-tuned low-pass filter using microstrip stepped-impedance hairpin resonators is proposed in this paper. A detailed theoretical analysis for the performance tuning mechanism is illustrated by using equivalent circuit models. The experiment results are provided to validate the proposed filter. From the measured results, it is found that five varactor diodes with two ap... View full abstract»

• ### A Parameter-Extraction Method for Microwave Transversal Resonator Array Bandpass Filters With Direct Source/Load Coupling

Publication Year: 2013, Page(s):1801 - 1811
Cited by:  Papers (8)
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A new simple and straightforward parameter-extraction method for a general transversal resonator array filter, which consists of parallel connected resonators in a circuit model, is proposed. Using this method enables one to effectively extract a direct source/load (S/L) coupling, as well as the external quality factor and the resonant frequency of each resonator path only from input reflection ph... View full abstract»

• ### Synthesis Design of Dual-Band Bandpass Filters With $lambda/4$ Stepped-Impedance Resonators

Publication Year: 2013, Page(s):1812 - 1819
Cited by:  Papers (43)
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This paper proposes a class of dual-band bandpass filters with λ/4 stepped-impedance resonators (SIRs) and presents a rigorous synthesis method for these compact filters. Firstly, λ/4 SIRs are designed to generate their first two resonant modes in the two specified passbands, and they are sequentially cascaded by alternative J and K inverters. In design, λ/4 SIRs... View full abstract»

• ### Synthesis and Design of Wideband Dual-Band Bandpass Filters With Controllable In-Band Ripple Factor and Dual-Band Isolation

Publication Year: 2013, Page(s):1820 - 1828
Cited by:  Papers (14)
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In this paper, an exact synthesis and design procedure has been proposed for a class of wideband dual-band bandpass filters (BPFs) with both controllable in-band ripple factor and isolation between the dual passband. Two multi-mode resonators (MMRs) with short-circuited stubs are parallel connected to form the basic structure of the proposed dual-band BPFs. Up to two pairs of transmission zeros (T... View full abstract»

• ### Intersecting Parallel-Plate Waveguide Loaded Cavities for Dual-Mode and Dual-Band Filters

Publication Year: 2013, Page(s):1829 - 1838
Cited by:  Papers (10)
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Dual-mode and/or dual-band microwave filters often employ high quality factor (Q ), physically large, and frequency static cavity resonators or low Q, compact, and tunable planar resonators. While each resonator type has advantages, choosing a dual-mode and/or dual-band resonator type is often limited by these extremes. In this paper, a new dual-mode and/or dual-band resonator is sho... View full abstract»

• ### Hybrid Models for Effective Design and Optimization of Large-Scale Multiplexing Networks

Publication Year: 2013, Page(s):1839 - 1849
Cited by:  Papers (5)
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In this paper, hybrid models for the design and optimization of large-scale multiplexers are presented. First, analysis based on the low-pass prototype filter circuit model proves that the first cavity of a channel filter next to the manifold is critical in the design of multiplexers. A hybrid model is proposed, combining a circuit model and the electromagnetic (EM) analysis of the coupling juncti... View full abstract»

• ### High-Power Combline Diplexer for Space

Publication Year: 2013, Page(s):1850 - 1860
Cited by:  Papers (4)
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A high-power L -band combline diplexer to be used in a National Aeronautics and Space Administration/Jet Propulsion Laboratory space mission has been designed and tested for multipaction. The radar path was required to have peak power handling of 450 W with 24.25-W average. The radar filter was partially filled with low-loss dielectric material to protect it against multipaction. The device... View full abstract»

• ### Effect of Device Layout on the Stability of RF MOSFETs

Publication Year: 2013, Page(s):1861 - 1869
Cited by:  Papers (2)
| | PDF (2007 KB) | HTML

In this paper, the stability of RF MOSFETs is investigated in terms of the stability-factor (k -factor) for various layout schemes and device dimensions based on two different RFCMOS technologies. To systematically analyze the effect of small-signal device model parameters on RF MOSFET stability, the expression for k-factor is derived as a function of the small-signal model parameter... View full abstract»

• ### Analytical Extraction of a Schottky Diode Model From Broadband S-Parameters

Publication Year: 2013, Page(s):1870 - 1878
Cited by:  Papers (13)
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We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of S-parameter data for GaAs-based pla... View full abstract»

• ### Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC

Publication Year: 2013, Page(s):1879 - 1891
Cited by:  Papers (12)
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A laboratory setup, along with a set of measurement and identification procedures, have been developed expressly for the characterization of the thermal behavior of AlGaN/GaN HEMTs, suitable for microwave high power amplifier (HPA) design. The setup allows the measurement of the drain current time-domain dynamic response to positive drain bias pulses, performed at different temperatures and differ... View full abstract»

• ### Design of High-Q Millimeter-Wave Oscillator by Differential Transmission Line Loaded With Metamaterial Resonator in 65-nm CMOS

Publication Year: 2013, Page(s):1892 - 1902
Cited by:  Papers (22)
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In this paper, low phase-noise, low-power, and compact oscillators are demonstrated at the millimeter-wave region based on differential transmission lines (DTLs) loaded with metamaterial resonators. There are two types of metamaterial resonators explored: split-ring resonators (SRRs) and complementary split-ring resonators (CSRRs). By creating a sharp stopband at the resonance frequency from a loa... View full abstract»

• ### A 453-/spl mu/W 53 - 70-GHz Ultra-Low-Power Double-Balanced Source-Driven Mixer Using 90-nm CMOS Technology

Publication Year: 2013, Page(s):1903 - 1912
Cited by:  Papers (9)
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An ultra-low-power consumption and ultra-low local oscillator (LO) power double-balanced down-conversion mixer using standard 90-nm CMOS technology is presented in this paper. By employing a weak inversion biasing technique in a source-driven topology, the proposed V-band mixer can operate at microwatt power consumption of 453 μW and has an ultra low LO power of -6 dBm. In addition, ... View full abstract»

• ### Broadband Balanced Frequency Doublers With Fundamental Rejection Enhancement Using a Novel Compensated Marchand Balun

Publication Year: 2013, Page(s):1913 - 1923
Cited by:  Papers (21)
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In this paper, a novel compensation technique is proposed to improve the imbalance of a Marchand balun due to the unequal odd- and even-mode phase velocities of the coupled lines. Using this method, the fundamental rejection of the balanced doubler with the Marchand balun can be effectively enhanced. Two single-balanced doublers using the improved Marchand balun are designed, fabricated, and measu... View full abstract»

• ### Analysis and design of an X-band-to-W-band CMOS active multiplier with improved harmonic rejection

Publication Year: 2013, Page(s):1924 - 1933
Cited by:  Papers (21)
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Third-harmonic current generation in a CMOS transistor is modeled and analyzed including the effects of large-signal clipping and high-frequency roll-off for the application of millimeter-wave (mm-wave) frequency multipliers. Using the model and introducing harmonic rejection techniques, a wideband 8.5-dBm output-power x9 frequency multiplier from X-band to W-band implemented using a... View full abstract»

• ### Ultra-Low-Power Cascaded CMOS LNA With Positive Feedback and Bias Optimization

Publication Year: 2013, Page(s):1934 - 1945
Cited by:  Papers (8)  |  Patents (1)
| | PDF (2156 KB) | HTML

A novel circuit topology for a CMOS low-noise amplifier (LNA) is presented in this paper. By employing a positive feedback technique at the common-source transistor of the cascade stage, the voltage gain can be enhanced. In addition, with the MOS transistors biased in the moderate inversion region, the proposed LNA circuit is well suited to operate at reduced power consumption and supply voltage c... View full abstract»

• ### A Mixed-Technology Asymmetrically Biased Extended and Reconfigurable Doherty Amplifier With Improved Power Utilization Factor

Publication Year: 2013, Page(s):1946 - 1956
Cited by:  Papers (17)
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In this paper, we present a mixed-technology extended Doherty amplifier using asymmetrical voltage biasing with an LDMOS main device and a GaN auxiliary device to improve the power utilization factor of the amplifier. Moreover, in contrast to previous work, the amplifier can achieve reconfigurable back-off power ranges and an extended bandwidth without using a mixed-signal setup. The analysis also... View full abstract»

• ### Compact Triple-Transistor Doherty Amplifier Designs: Differential/Power Combining

Publication Year: 2013, Page(s):1957 - 1963
Cited by:  Papers (8)
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This paper investigates two novel triple-transistor Doherty power amplifier (DPA) designs. A compact fully differential DPA topology will be firstly introduced. Three active devices, two carriers, and one peaking are combined in a very judicious way to amplify the differential signal like what a typical Doherty amplifier does. Due to the reduction of transistor number from four for a classic diffe... View full abstract»

• ### A Millimeter-Wave Low-Power Active Backscatter Tag for FMCW Radar Systems

Publication Year: 2013, Page(s):1964 - 1972
Cited by:  Papers (10)
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In this paper, a fully integrated active backscatter transponder based on the switched injection-locked oscillator (SILO) principle for frequency-modulated continuous-wave radar applications is presented. Furthermore, a method to characterize a SILO amplifier is extended and utilized to measure the system parameters of the presented backscatter tag that operates at 34.45 GHz. It is digitally tunab... View full abstract»

## Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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## Meet Our Editors

Editor-in-Chief
Luca Perregrini
luca.perregrini@unipv.it

Editor-in-Chief
Jose Carlos Pedro
edit.tmtt@ua.pt