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Microwave and Wireless Components Letters, IEEE

Issue 4 • Date April 2013

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Displaying Results 1 - 22 of 22
  • Table of Contents

    Page(s): C1 - C4
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  • IEEE Microwave and Wireless Components Letters publication information

    Page(s): C2
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  • Editorial

    Page(s): 169 - 174
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  • A Novel Symplectic Multi-Resolution Time-Domain Scheme for Electromagnetic Simulations

    Page(s): 175 - 177
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (853 KB) |  | HTML iconHTML  

    A symplectic scheme is applied to the multi-resolution time-domain (MRTD) method, resulting in a highly stable novel symplectic MRTD scheme. First, the time-domain Maxwell's equations are rewritten as a matrix equation. Then, we discretize the Maxwell's equations in the time direction using symplectic propagation integrator (SPI) technique and evaluate the equations in the spatial direction with high order spatial multi-resolution approximation to construct novel symplectic MRTD scheme. The stability and numerical dispersion analysis are also included. Numerical results are given to show the high efficiency and accuracy of the method. View full abstract»

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  • Reduced-Loss Ink-Jet Printed Flexible CPW With Copper Coating

    Page(s): 178 - 180
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (599 KB) |  | HTML iconHTML  

    Electroplating copper onto ink-jet printed silver coplanar waveguide (CPW) significantly reduces the insertion loss and can improve return loss. The structures are fabricated on flexible polyimide substrates using ink-jet printing and low-temperature curing. Copper-coated silver CPW exhibits good adhesion and flexibility and the RF and microwave performance is minimally affected by bending. View full abstract»

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  • Compact Dual-Band Bandpass Filter Using Quadruple-Mode Square Ring Loaded Resonator (SRLR)

    Page(s): 181 - 183
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (604 KB) |  | HTML iconHTML  

    A compact quadruple-mode square ring loaded resonator (SRLR) is proposed in this letter. Distinct mode splitting characteristics of the quadruple-mode SRLR are investigated and explained by using even- and odd-mode analysis. It results to excite four resonant modes which are applied to produce two pairs of transmission poles for dual-band bandpass filter (BPF) design. Based on the unique characteristics of the proposed SRLR, a miniaturized dual-band BPF operating at 2.45 GHz and 5.20 GHz for WLAN applications was designed and fabricated. Multiple transmission zeros are generated to improve the selectivity of the filter. Measurements are in good agreement with the simulations. Also, the circuit size occupies only 0.11λg×0.23λg, where λg is the guided wavelength at the center frequency of the first passband. View full abstract»

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  • Tunable Bandpass Filter Using Partially Magnetized Ferrites With High Power Handling Capability

    Page(s): 184 - 186
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (505 KB) |  | HTML iconHTML  

    Low-loss tunable bandpass filters (BPFs) using partially magnetized ferrites is presented. A magnetic field tunable BPFs was designed based on partially magnetized yttrium iron garnet (YIG) operating at 6.17 GHz, which shows low insertion loss and a large frequency tunability of ~6% under a low bias field of 100 Oe. Power handling measurement on the tunable BPF with partially magnetized YIG slab showed an IP1dB of 11.5-18 dBm within the bias field of 0 to 100 Oe, and over 30 dBm in a saturated state. View full abstract»

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  • Frequency-Agile Bandpass Filters Using Liquid Metal Tunable Broadside Coupled Split Ring Resonators

    Page(s): 187 - 189
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (638 KB) |  | HTML iconHTML  

    A fluidic-based approach for designing tunable coupled resonator bandpass filters is presented. These filters employ broadside coupled split ring resonators (BC-SRR) with one of their open loop resonators constructed from liquid metal. The tuning mechanism is based on dynamically moving the liquid metal to reshape the resonator. To demonstrate the concept, a second order Butterworth filter with continuous tuning range from 650 to 870 MHz is designed and experimentally verified by utilizing PTFE tubing filled with liquid metal and Teflon solution. Due to an inductive external coupling mechanism and 180° rotated resonators, the filter exhibits a near constant 5% fractional bandwidth throughout its tuning range with > 10 dB return and <; 3 dB insertion loss. The filter is realized over a 1.27 mm thick Rogers 6010.2LM substrate and has an approximate footprint of 20 × 40 mm2. View full abstract»

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  • A Tunable Bandpass Filter With Modified Parallel-Coupled Line

    Page(s): 190 - 192
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (642 KB) |  | HTML iconHTML  

    A tunable bandpass filter with a wide tuning range is presented in this letter. The proposed filter is composed of two modified parallel-coupled lines and one varactor-loaded stub. Particularly, the modified parallel-coupled line is realized by a varactor connected to one end of the coupled line with asymmetric feeding and an open stub added to the coupled line's other end. Moreover, the varactor-loaded stub is introduced to control the transmission zero around the lower/higher passband skirt. The measured results show that a broad tuning range of 41.7%, from 0.95 to 1.45 GHz, was achieved. Within the tuning range, the insertion loss is from 2.4 to 2.9 dB and the return loss is greater than 15 dB. View full abstract»

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  • Dual Band Band-Pass Filter With Wide Stopband on Multilayer Organic Substrate

    Page(s): 193 - 195
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (647 KB) |  | HTML iconHTML  

    We present the design and development of a compact, dual-band, wide stop-band band-pass filter on a multilayer organic substrate. The filter is designed based on quasi-lumped hybrid LC resonators that are coupled by shunt-inductor impedance inverters. The experimental results show that the filter has two passbands at 1.7 and 4.0 GHz with an out-of-band rejection level better than 50 dB up to 16.5 GHz. View full abstract»

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  • Rational Function Based Model for the Joint Mitigation of I/Q Imbalance and PA Nonlinearity

    Page(s): 196 - 198
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (697 KB) |  | HTML iconHTML  

    Nonlinearity in power amplifiers and In-phase and Quadrature phase (I/Q) imperfections degrade the performance of direct conversion transmitters. In this letter, a novel rational function based model is proposed to jointly alleviate both these impairments. The performance of the model is evaluated in terms of Normalized mean square error (NMSE) and Adjacent channel error power ratio (ACEPR). Simulation results and measurements show that the model has an improvement of around 2 dB NMSE and around 3 dB in ACEPR than the state of the art parallel Hammerstein based model . Also the model attains a lower complexity while maintaining almost same performance. View full abstract»

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  • A High Voltage Swing Dual-Band Bandpass \Delta \Sigma Modulator for Mobile Base-Station

    Page(s): 199 - 201
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (827 KB) |  | HTML iconHTML  

    A fully integrated high voltage swing dual-band continuous-time bandpass delta-sigma modulator (CT BPDSM) with a high voltage swing and fabricated on a 0.25 μm SiGe BiCMOS is presented. The proposed CT BPDSM consists of a two-stage second-order resonator, a high speed comparator, multi-feedback current DACs, and a high voltage swing driver. The band selection is controlled using a capacitor bank, and fine frequency tuning is conducted by a varactor. At 883 and 955 MHz, the implemented BPDSM with a high voltage swing shows a peak SNR of 40.6 and 41.9 dB, and an error vector magnitude (EVM) of 5.48%, 3.48%, respectively. In addition, it has a differential output voltage swing of 1.55 Vp-p with a dc power consumption of 635.3 mW. View full abstract»

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  • Active Integrated Antenna Using BJT With Floating Base

    Page(s): 202 - 204
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (605 KB) |  | HTML iconHTML  

    A feedback-oscillator type active antenna using RF BJT with floating base terminal has been demonstrated for the first time. Other than simplifying bias connections, which is important for large arrays and power combining, this has potential for future optical sensing and control circuitry, since the floating base is light-sensitive. View full abstract»

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  • A Stand-Alone Distortion-Cancelling Cell for Microwave Amplifiers

    Page(s): 205 - 207
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (440 KB) |  | HTML iconHTML  

    This letter presents a standalone circuit (cell) to reduce the third-order inter-modulation distortion (IMD) produced in microwave amplifiers. The cell splits the output of the amplifier into two paths. In one path, the amplified signal and the IMD tones pass through toward the output. In the other path, an auxiliary FET device biased near pinchoff and a tunable phase shifter reproduce the amplifier's IMD tones but with the opposite phase as the original tones. When the IMD tones in the two paths are combined at the output, they cancel out and the input third-order intercept point (IIP3) of the amplifier is improved. The cell requires only two tuning voltages: one for the auxiliary FET and another for the variable phase shifter. Experimental test results show that the cell was able to improve the IIP3 of a commercial, off-the-shelf, microwave amplifier from +9.5 dBm to +17.5 dBm. View full abstract»

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  • 1 W, Highly Efficient, Ultra-Broadband Non-Uniform Distributed Power Amplifier in GaN

    Page(s): 208 - 210
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (562 KB) |  | HTML iconHTML  

    This letter describes the design and implementation of a highly linear, ultra-broadband non-uniform asymmetric distributed MMIC power amplifier in GaN, delivering 1 W of output power and suitable for operation at frequencies up to 6.5 GHz. The GaN HFETs used here have a gate length of 500 nm, and breakdown-voltages exceeding 100 V while exhibiting an fT of approximately 30 GHz. A non-uniform asymmetric distributed topology is used to achieve ultra-broadband performance. CW measurements carried out at nominal bias between 0.5 GHz and 6.5 GHz yielded a maximum PAE of 38.1% at 0.5 GHz, with PAE higher than 20% over the entire band, while achieving Pout > 30 dBm. View full abstract»

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  • Temperature Behavior and Compensation of Diode-Based Pre-Distortion Linearizer

    Page(s): 211 - 213
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (806 KB) |  | HTML iconHTML  

    This letter presents temperature behavior and compensation technique of Schottky diode and p-i-n diode based pre-distortion linearizer operating at microwave frequency. We have theoretically analyzed and experimentally demonstrated the temperature behavior of the linearizer and proposed a simple but effective temperature compensation technique. The proposed temperature compensation technique provides temperature dependent control bias to the diodes to achieve temperature invariant amplitude and phase expansion of the linearizer. Here design, simulation and test results of a temperature compensated linearizer is presented that compensates amplitude and phase variation from 6 dB and 50° to less than 0.7 dB and 4.5°, respectively, over a temperature range of -20 °C to +80 °C. View full abstract»

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  • A 1.2 V, 0.9 mW UHF VCO Based on Hairpin Resonator in Paper Substrate and Cu Adhesive Tape

    Page(s): 214 - 216
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (386 KB) |  | HTML iconHTML  

    A 1.2 V, 0.9 mW, 998 MHz voltage controlled oscillator (VCO) adopting a distributed hairpin resonator in paper substrate is described. The microstrip resonator exploits a copper adhesive tape that is shaped by a photo-lithographic process and transferred to the hosting substrate using a sacrificial layer. To minimize the number of components, a cross-coupled differential VCO circuit is adopted. As a consequence only 3 external devices are necessary: a single-package BJT pair, a resistor and a by-pass capacitor. The measurements show a phase noise of -99 dBc/Hz at 100 KHz offset from the carrier. At 1.2 V the output power is -22 dBm, whereas the tuning sensitivity is about - 100 MHz/V. The proposed design shows the feasibility of low-power oscillators for autonomous wireless sensors based on green materials. View full abstract»

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  • Non-Destructive Thickness Measurement Using Quasi-Static Resonators

    Page(s): 217 - 219
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (545 KB) |  | HTML iconHTML  

    A microwave sensor for non-destructive measurement of dielectric thickness is presented. The sensor is a quasi-static resonator and based on complementary split ring resonator (CSRR) structure. When the CSRR structure is backed by a conductive medium covered with a dielectric layer the resonance frequency of the CSRR has a strong dependence on the thickness of the dielectric layer. Effect of the size of CSRR sensor on the sensitivity is analyzed numerically. For experimental verification, a CSRR sensor that operates in the 1.6 to 2.3 GHz band is fabricated and excited by a microstrip line. View full abstract»

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  • Investigation of Push-Pull Microwave Power Amplifiers Using an Advanced Measurement Setup

    Page(s): 220 - 222
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (522 KB) |  | HTML iconHTML  

    In this letter, we investigate the influence of the output balun for realization of wideband and efficient microwave push-pull power amplifiers (PAs). For this, a push-pull GaN-HEMT PA operating between 1-3 GHz without an output balun has been implemented and a novel push-pull harmonic load-pull measurement setup that allows arbitrary balanced fundamental and second harmonic loads to be presented to the push-pull PA is proposed. The measurement results illustrate that the efficiency may be degraded up to 25% if improper common mode harmonic impedances are presented by the balun. The proposed approach allows the PA and balun to be investigated separately and is therefore expected to be an important tool for further research on balun and PA structures suitable for high efficiency and wideband push-pull applications at microwave frequencies. View full abstract»

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  • IEEE Xplore Digital Library

    Page(s): 223
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  • IEEE Member digital library

    Page(s): 224
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  • IEEE Microwave and Wireless Components Letters information for authors

    Page(s): C3
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Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope