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Quantum Electronics, IEEE Journal of

Issue 4 • Date April 2013

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Displaying Results 1 - 15 of 15
  • [Front cover]

    Page(s): C1
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  • IEEE Journal of Quantum Electronics publication information

    Page(s): C2
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  • Table of contents

    Page(s): 387 - 388
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  • Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes

    Page(s): 389 - 394
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (802 KB) |  | HTML iconHTML  

    We study self-assembled InP quantum dot (QD) laser structures grown at two temperatures (690°C and 730 °C) each with three different quantities of deposited quantum dot material (2, 2.5, and 3 mono-layers). The absorption spectra of these structures show features associated with the QD distributions and the magnitude of the absorption increases for samples where more material is deposited and for lower growth temperature. The 690°C growth temperature structures exhibit nonradiative recombination and internal optical mode loss that increase with the quantity of material deposited; we suggest that the laser performance is limited by the presence of defects. The higher growth temperature samples have lower threshold current density and are limited by gain saturation. For these samples and for 2-mm long lasers with uncoated facets, the threshold current density is as low as 150 A cm-2, emitting in the wavelength range around 730 nm. View full abstract»

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  • Portable Scheme for Solving 1-D Time-Dependent Schrödinger Equation for Photo-Induced Dynamics of an Electron in Quantum Wells

    Page(s): 395 - 401
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (590 KB) |  | HTML iconHTML  

    We provide a simple numerical scheme for solving the ground state of an electron with arbitrary potential profile of quantum wells (QWs) as well as time-evolution under optical excitation by solving the (time-dependent) Schrödinger equation. Photo-induced migration of electron under asymmetric potential profile of QWs is demonstrated, which is highly sensitive to the wavelength of the applied light. Furthermore, electron behavior in multiple QWs is examined with and without irregularity in the period of multiple QWs. We believe that the current numerical scheme will be a useful tool for designing QWs to enhance photo-excitation and subsequent carrier migration without massive computational effort. We note that the current computational scheme is easy to code and perform, even on a laptop computer. View full abstract»

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  • Simultaneous Dense Differential Phase-Shift Keying Wavelength Division Multiplexing Signal Quality Observation Based on Sequential Ultrafast Field Sampling

    Page(s): 402 - 407
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1603 KB) |  | HTML iconHTML  

    This paper describes a signal quality monitoring technique for wavelength division multiplexing (WDM) signals that uses an ultrafast field sampling approach, where the observed signal is parallelly sampled with N channel coherent mixers that include a delay of nT , where n is the channel number and T is the unit delay. Previously, we demonstrated that the technique was able to monitor ON-OFF Keying WDM signals with the aid of a digital finite impulse response filter. In this paper we apply the technique to a dual-channel sampling configuration to monitor differential phase-shift keying (DPSK) WDM signals. We show that the dual 16-branch serial sampling of the total field allows us to observe an 8-ch 25 Gb/s DPSK signal with a total data rate of 200 Gb/s. In addition, the measurement result is comparable to the result obtained by using an optical filter. We also confirm that the technique is capable of monitoring the optical signal to noise ratio (OSNR) up to over 20 dB. Moreover, by adaptively changing the filter profile, we simulate the dependence of the OSNR on the filter profile. In this paper, the technique uses an equivalent sampling approach with a sampling pulse that has a repetition frequency (sampling rate) as low as 10 MHz, so the use of the technology is limited to monitoring the signal. The technique can be used to receive an actual data transmission if the sampling rate is 1/NT, where N is the number of channels. View full abstract»

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  • Pulse Energy Scaling by Optimizing Cavity Management in Low Repetition Rate Erbium-Doped Fiber Femtosecond Lasers

    Page(s): 408 - 412
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (471 KB) |  | HTML iconHTML  

    We experimentally demonstrate direct generation of 51 nJ, 284-fs ultrashort pulses in an all-fiber cavity-optimized erbium-doped laser with a low repetition rate of 2.68 MHz. The conversion efficiency of the laser is about 10%. The laser is mode-locked by nonlinear polarization rotation. Such high energy and ultrashort duration benefits from using large output ratio (90%), elongating the cavity length, dispersion management, and bidirectional high-power pumping in the laser. Further decreasing the net dispersion of the laser by using a dispersion-compensated fiber can reduce the pulse duration to 160 fs. In addition, variation of spectral width due to an invisible filter in the laser is experimentally demonstrated. View full abstract»

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  • Solution Method for Mixed Boundary Value Problems: Applications to Current Injection in Semiconductor Lasers

    Page(s): 413 - 418
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (350 KB) |  | HTML iconHTML  

    We developed an iterative method for calculating the solutions to mixed boundary value problems. First, we demonstrate the method by calculating injection current densities from a metal contact plane into a single layer of finite conductivity material. Next, we show how the method adapts to much more complicated cases by calculating injection profiles for several semiconductor laser geometries. The method proves to be practical and accurate for calculating injection current profiles for semiconductor epitaxial structures. View full abstract»

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  • YDFL Operating in 1150–1200-nm Spectral Domain

    Page(s): 419 - 425
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1364 KB) |  | HTML iconHTML  

    A family of high-power Yb-doped fiber lasers operated in the range of 1150–1180 nm with output powers of up to 35 W and optical efficiencies up to 60% is realized. Operation at 1200 nm is also demonstrated. Amplified spontaneous emission increase with output power increase is analyzed in frames of the inhomogeneous broadening concept. View full abstract»

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  • Performance Optimization of Multiple Quantum Well Transistor Laser

    Page(s): 426 - 435
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (916 KB) |  | HTML iconHTML  

    A comprehensive physical model that emphasizes carrier tunneling between quantum wells (QWs) in the base of transistor lasers (TLs) is developed. This model relies on a set of multilevel coupled rate equations solved by computationally efficient numerical methods for simulating both steady state and transient TL operations. Our approach also features the explicit dependence of the structure design on device parameters such as optical confinement factor and carrier density-dependent gain. It also accounts for operation behaviors such as bandwidth roll-off and critical base width not yet addressed in the literature. Simulation results show significant enhancement in optical bandwidth as well as threshold current reduction when multiple QWs are incorporated within the base region. It predicts the dominance of tunneling transport of carriers for barriers thinner than 13.5 nm in a system with 7-nm QWs. However, the optimum QW number depends on the structure design as well as TL biasing conditions. For this purpose, we define a performance parameter as a TL figure of merit that can be maximized by optimizing both the base and the cavity designs. View full abstract»

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  • Numerical Simulation of GaN-Based LEDs With Chirped Multiquantum Barrier Structure

    Page(s): 436 - 442
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (894 KB) |  | HTML iconHTML  

    The authors report the numerical simulation of GaN-based light-emitting diodes (LEDs) with either a conventional AlGaN electron blocking layer (EBL), uniform multiquantum barrier (UMQB) structure, or chirped multiquantum barrier (CMQB) structure. It is found that the 102-meV effective barrier height simulated from the LED with CMQB structure is larger than those simulated from the LEDs with a UMQB structure (90 meV) and with conventional AlGaN EBL (60 meV). With the large effective barrier height, it is found that LEDs with a CMQB structure exhibit smaller leakage current. It is also found that the maximum internal quantum efficiencies are 0.703, 0.842, and 0.887, for the LEDs with conventional EBL, UMQB structure, and CMQB structure, respectively. In addition, it is found that forward voltages simulated from the LEDs with CMQB structure and with UMQB structure are both smaller than that simulated from the LED with conventional AlGaN EBL. These results also agree well with the experimental data. View full abstract»

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  • CFP- JSTQE on silicon photonics

    Page(s): 443
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  • Transforming science into technology [advertisement]

    Page(s): 444
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  • IEEE Journal of Quantum Electronics information for authors

    Page(s): C3
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  • [Blank page - back cover]

    Page(s): C4
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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

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Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University