# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 70

Publication Year: 2013, Page(s):C1 - 898
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2013, Page(s): C2
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• ### A Warm Welcome to a New T-ED Editor

Publication Year: 2013, Page(s): 899
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• ### New Subject Category on Emerging Technologies and Devices

Publication Year: 2013, Page(s): 900
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• ### A Comparative Study of Different Physics-Based NBTI Models

Publication Year: 2013, Page(s):901 - 916
Cited by:  Papers (104)
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Different physics-based negative bias temperature instability (NBTI) models as proposed in the literature are reviewed, and the predictive capability of these models is benchmarked against experimental data. Models that focus exclusively on hole trapping in gate-insulator-process-related preexisting traps are found to be inconsistent with direct experimental evidence of interface trap generation. ... View full abstract»

• ### Perturbation Theory for Solar Cell Efficiency II—Delineating Series Resistance

Publication Year: 2013, Page(s):917 - 922
Cited by:  Papers (5)
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Recently proposed perturbation analysis and reciprocity relations in photovoltaic conversion are demonstrated in 2-D simulations. The main parameters discussed are the current-conversion efficiency, which enables accurate calculation of the sensitivity of maximum power to different recombination parameters, and its derived local series resistance, whose weighted average is exactly equal to the ser... View full abstract»

• ### Limitations of the High - Low C - V Technique for MOS Interfaces With Large Time Constant Dispersion

Publication Year: 2013, Page(s):923 - 926
Cited by:  Papers (20)
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We discuss the limitations of the high-low CV technique in evaluating the interface trap density (DIT) in MOS samples with a large time constant dispersion, as occurs in silicon carbide (SiC). We show that the high-low technique can seriously underestimate DIT for samples with large time constant dispersion, even if elevated temperatures are used to exten... View full abstract»

• ### High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $hbox{HfO}_{2}/hbox{Al}_{2}hbox{O}_{3}/hbox{GeO}_{x}/hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Publication Year: 2013, Page(s):927 - 934
Cited by:  Papers (103)
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An ultrathin equivalent oxide thickness (EOT) HfO2/Al2O3/Ge gate stack has been fabricated by combining the plasma postoxidation method with a 0.2-nm-thick Al2O3 layer between HfO2 and Ge for suppressing HfO2-GeOx intermixing, resulting in a low-interface-state-density (Dit) GeOx/Ge metal-o... View full abstract»

• ### Impact of a Spacer–Drain Overlap on the Characteristics of a Silicon Tunnel Field-Effect Transistor Based on Vertical Tunneling

Publication Year: 2013, Page(s):935 - 943
Cited by:  Papers (16)
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A tunnel field-effect transistor (FET) (TFET), in which the dominant carrier tunneling occurs in a direction that is in line with the gate electric field, shows great promise for sub-0.6-V operation. A detailed investigation, with the help of extensive device simulations, of the effects of a spacer-drain overlap on the device characteristics of such silicon TFET is reported in this paper. It is de... View full abstract»

• ### Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs

Publication Year: 2013, Page(s):944 - 950
Cited by:  Papers (8)
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The electron transport properties of square and rectangular cross-sectional germanium nanowire (GeNW) field-effect transistors (FETs) with [001], [110], [111], and [112] crystal orientations are investigated. The electronic states of GeNWs are calculated by using an sp3d5s* tight-binding model coupled to a Poisson equation self-consistently. A semiclassic... View full abstract»

• ### SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

Publication Year: 2013, Page(s):951 - 957
Cited by:  Papers (63)
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In this paper, an analytical model for calculating the channel potential and current-voltage characteristics in a symmetric tunneling field-effect transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to-source bias VDS View full abstract»

• ### Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

Publication Year: 2013, Page(s):958 - 964
Cited by:  Papers (11)
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With the recent upsurge in experimental efforts toward fabrication of short-channel graphene field-effect transistors (GFETs) for analog and high-frequency RF applications-where the advantages of distinctive intrinsic properties of gapless graphene are expected to be leveraged-a critical understanding of the factors affecting both output and transfer characteristics is necessary for device optimiz... View full abstract»

• ### Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

Publication Year: 2013, Page(s):965 - 971
Cited by:  Papers (14)
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In this paper, we report the first systematic study of quantum transport simulation of the impact of precisely positioned dopants on the performance of ultimately scaled gate-all-around silicon nanowire transistors (NWTs) designed for digital circuit applications. Due to strong inhomogeneity of the selfconsistent electrostatic potential, a full 3-D real-space nonequilibrium Green function formalis... View full abstract»

• ### Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits

Publication Year: 2013, Page(s):972 - 977
Cited by:  Papers (4)
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This paper studies the impact of high-mobility materials on the performance and energy efficiency of near- and sub-threshold CMOS logic circuits by means of analytical equations and experimental data on SiGe pMOSFETs. The introduction of high-mobility materials is shown to improve the energy-performance trade-off in near-threshold circuits more than in above-threshold circuits, since the benefits ... View full abstract»

• ### Statistical Characterization and Modeling of the Temporal Evolutions of $Delta V_{rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETs

Publication Year: 2013, Page(s):978 - 984
Cited by:  Papers (7)
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NBTI trapped charge characteristics and recovery mechanisms are examined by a statistical study of individual trapped charge emissions in nanoscale HfSiON/metal gate pMOSFETs. We measure individual trapped charge emission times in NBTI recovery in a large number of devices. The characteristic time distributions of the first three emitted holes are obtained. The distributions can be well modeled by... View full abstract»

• ### Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Publication Year: 2013, Page(s):985 - 991
Cited by:  Papers (21)
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We study theoretically the different transport behaviors and the electrical characteristics of a top-gated graphene field-effect transistor where boron nitride is used as the substrate and gate insulator material, which makes the ballistic transport realistic. Our simulation model is based on the Green's function approach to solving a tight-binding Hamiltonian for graphene, self-consistently coupl... View full abstract»

• ### Extraction and Analysis of Interface States in 50-nm nand Flash Devices

Publication Year: 2013, Page(s):992 - 997
Cited by:  Papers (3)
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A method to extract the interface states (Nit) located in the center area (center Nit) and the Nit located in the corner region (corner Nit) of NAND Flash devices is presented in this paper. This Nit extraction method is based on a careful combination of charge-pumping current data, technology computer-aided-... View full abstract»

• ### Area-Dependent Photodetection Frequency Response Characterization of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

Publication Year: 2013, Page(s):998 - 1004
Cited by:  Papers (24)
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We investigate the area-dependent characteristics of photodetection frequency responses of 850-nm silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. CMOS-compatible APDs (CMOS-APDs) based on a p+/n-well junction with four different device areas are used for the investigation, and we identify factors that influence ... View full abstract»

• ### Strain and Conduction-Band Offset in Narrow n-type FinFETs

Publication Year: 2013, Page(s):1005 - 1010
Cited by:  Papers (3)
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In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strai... View full abstract»

• ### High Area-Efficient ESD Clamp Circuit With Equivalent $RC$-Based Detection Mechanism in a 65-nm CMOS Process

Publication Year: 2013, Page(s):1011 - 1018
Cited by:  Papers (9)  |  Patents (1)
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A power-rail electrostatic discharge (ESD) clamp circuit realized with ESD clamp device drawn in the layout style of big field-effect transistor (BigFET), and with parasitic diode of BigFET as a part of ESD-transient detection mechanism, is proposed and verified in a 65-nm 1.2-V CMOS process. Skillfully utilizing the diode-connected MOS transistor as the equivalent large resistor and the parasitic... View full abstract»

• ### A Simulation Study on Process Sensitivity of a Line Tunnel Field-Effect Transistor

Publication Year: 2013, Page(s):1019 - 1027
Cited by:  Papers (4)
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A process sensitivity study of a steep subthreshold swing line tunnel field-effect transistor is presented for the first time using 2-D quantum-mechanical device simulations. The impact of various process parameters on the device transfer characteristics is presented with the help of process splits. A study of the thermal budget also shows that an increase in epitaxial growth thermal budget degrad... View full abstract»

• ### A Preliminary Study on the Environmental Dependences of Avalanche Propagation in Silicon

Publication Year: 2013, Page(s):1028 - 1033
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The growing use of single-photon avalanche diodes in strong magnetic fields has spurred an interest in understanding how the environment distorts the avalanche process. In this paper, we extend the multiplication-assisted diffusion avalanche model to include convection from a Lorentzian force caused by a strong magnetic field. Simulations imply that the avalanche is still expected to propagate at ... View full abstract»

• ### High-Performance Silicon Nanotube Tunneling FET for Ultralow-Power Logic Applications

Publication Year: 2013, Page(s):1034 - 1039
Cited by:  Papers (19)
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To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon ... View full abstract»

• ### Raised-Source/Drain Double-Gate Transistor Design Optimization for Low Operating Power

Publication Year: 2013, Page(s):1040 - 1045
Cited by:  Papers (2)
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In this simulation-based study, the raised-source/drain (RSD) double-gate MOSFET design is optimized for scaling to gate lengths below 10 nm, and its performance is compared against that of the dopant-segregated Schottky (DSS) double-gate MOSFET design, for applications requiring low operating power. It is found that the RSD design provides for higher drive current and shorter intrinsic delay than... View full abstract»

• ### AlGaN Channel HEMT With Extremely High Breakdown Voltage

Publication Year: 2013, Page(s):1046 - 1053
Cited by:  Papers (27)
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Enhanced performance of RF power modules is required in a next-generation information society. To satisfy these requirements, we designed a novel high-electron mobility transistor (HEMT) structure employing wider bandgap AlGaN for a channel layer, which we called AlGaN channel HEMT, and investigated it. The wider bandgap is more effective for higher voltage operation of HEMTs and contributes to th... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy