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Nuclear Science, IEEE Transactions on

Issue 6 • Date Dec. 1974

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Displaying Results 1 - 25 of 76
  • [Front cover]

    Publication Year: 1974 , Page(s): c1
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  • [Inside front cover]

    Publication Year: 1974 , Page(s): c2
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  • Table of contents

    Publication Year: 1974 , Page(s): 1
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  • Scenes and faces at the 1974 conference

    Publication Year: 1974 , Page(s): 6 - 7
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  • Summary of 1974 IEEE annual conference on nuclear and space radiation effects

    Publication Year: 1974 , Page(s): 8
    Request Permissions | Click to expandAbstract | PDF file iconPDF (213 KB)  

    The eleventh IEEE Annual Conference on Nuclear and Space Radiation Effects was held in Fort Collins, Colorado on July 15–18, 1974 on the campus of Colorado State University. More than 290 attended. The Conference was officially sponsored by the Radiation Effects Committee of the IEEE Nuclear and Plasma Sciences Society in cooperation with the Office of Conferences and Institutes, Colorado S... View full abstract»

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  • The nucleus

    Publication Year: 1974 , Page(s): 9
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    For nearly a decade, the December issue of the Transactions on Nuclear Science has contained selected papers from the IEEE Annual Conference on Nuclear and Space Radiation Effects. Considered collectively, these December issues probably constitute the most important source of documented technical information for workers in the field of applied radiation effects. Papers presented at this year's con... View full abstract»

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  • IEEE nuclear and plasma sciences [committees]

    Publication Year: 1974 , Page(s): 10
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  • Reviewers for this issue

    Publication Year: 1974 , Page(s): 11
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  • Outstanding paper award — 1974 IEEE conference on nuclear and space radiation effects

    Publication Year: 1974 , Page(s): 12 - 13
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  • Luminescence in electron irradiated CdS

    Publication Year: 1974 , Page(s): 14 - 20
    Cited by:  Papers (2)
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    Electron irradiation induced changes in both the photo- and cathodo-luminescence spectra of high purity CdS platelets have been monitored over a wavelength range from 4800Å to 2 μm. The irradiations were all performed near 10K using beam energies from 100 keV to 1 MeV. By irradiating with electron energies between the cadmium and sulfur displacement thresholds, and above the cadmium ... View full abstract»

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  • Photoabsorption effects in low temperature electron-irradiated Germanium

    Publication Year: 1974 , Page(s): 21 - 25
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    Photoconductivity measurements performed under carefully controlled conditions have revealed that the dominant defects in low temperature, electron irradiated n-type Ge are optically active, double-acceptor type defects which thermally anneal at a temperature around 65°K. The stability of these defects is sensitive to temperature, background light levels, irradiation fluenced and fluxes, an... View full abstract»

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  • Calculated displacement damage by neutrons in InSb

    Publication Year: 1974 , Page(s): 26 - 29
    Cited by:  Papers (2)
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    Displacement damage in InSb is calculated for 1MeV and 14MeV incident neutrons. Ranges and energy deposition profiles are calculated with the E-DEP-1 computer code and combined with published neutron cross sections to obtain atomic displacement rates and range distributions. The damage ratio of 14MeV to 1MeV neutrons is estimated as close to unity. Comparison results are presented for Si. Experime... View full abstract»

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  • Effects of irradiation on the electrical and optical properties of PbSnTe

    Publication Year: 1974 , Page(s): 30 - 33
    Cited by:  Papers (2)
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    Radiation effects on the electrical conductivity, Hall mobility, and carrier density were studied on three different types of p-type PbSnTe samples. One type (sample 1) was vapor-grown with an initial carrier density of ∼4 &time; 1016 cm−3, and was irradiated with 30-MeV electrons at 78°K. Another type (sample 2), which was cut from a solid-state r... View full abstract»

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  • Radiation effects on the spectral response of HgCdTe

    Publication Year: 1974 , Page(s): 34 - 39
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1299 KB)  

    We present a theoretical model for the effects of electron irradiation on the bulk electronic energy band parameters of HgCdTe. The material is treated as degenerate. We predict irradiation induced changes in the shape of spectral response and resolve apparent inconsistencies in the HgCdTe photoresponse data. Qualitative, overall changes in photoconductive detector response are predicted and we fi... View full abstract»

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  • Electron damage in In2Te3 — A defect tetrahedral semiconductor

    Publication Year: 1974 , Page(s): 40 - 46
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    Indium sesquitelluride (In2Te3) is typical of a large class of defect semiconductors which are tetrahedrally bonded but which possess room temperature vacancy concentrations of the order of 5.5 &time; 10 cm−3. It has been proposed by V.M. Koshkin et al. that these semiconductors can not preserve non-equilibrium point defect concentrations. This hypoth... View full abstract»

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  • Rapid annealing and charge injection in Al2O3 MIS capacitors

    Publication Year: 1974 , Page(s): 47 - 55
    Cited by:  Papers (15)
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    Rapid annealing after radiation and field injection characteristics of Al2O3 MIS capacitors have been investigated by means of a fast C-V measurement technique. The results indicate that electron injection under positive bias and trapping of radiation-generated holes are dominated by an interface transition region at the Si-Al2O3 interface which need not... View full abstract»

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  • Effects of stoichiometry on the radiation response of SiO2

    Publication Year: 1974 , Page(s): 56 - 61
    Cited by:  Papers (7)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1257 KB)  

    Defect center production in irradiated silica is shown to exceed that found in stoichiometric SiO2. The defect centers observed are the E′ type which are associated with oxygen vacancies. It is suggested that a large concentration of E′ centers is expected near the oxygen deficient Si-SiO2 interface of irradiated MOS devices and that the presence of these defect... View full abstract»

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  • Effects of ion bombardment on Na and Cl motion in SiO2 thin films

    Publication Year: 1974 , Page(s): 62 - 66
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    The effects of light and heavy ion bombardment on Na and Cl motion in SiO2 thin films have been studied using proton-induced characteristic x-ray (PIX) and Rutherford backscattering (RBS) techniques. Results show that both Na and Cl atoms may be trapped in the oxides by implantation damage. Release does not occur under ionizing irradiation (proton bombardment). Partial release or motion... View full abstract»

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  • Sodium mobility in irradiated SiO2

    Publication Year: 1974 , Page(s): 67 - 72
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1260 KB)  

    The distribution of sodium in the oxide films of MOS capacitors was determined by etch-off procedures, using sodium-22 as a tracer. The effects on sodium distribution of ionizing radiation, of in-diffused aluminum, and of bias-temperature stressing were then determined and compared with C-V measurements of the total oxide charge in the same samples. Aluminum films sintered for 30 minutes at 500&#x... View full abstract»

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  • Charge transport studies in SiO2: Processing effects and implications for radiation hardening

    Publication Year: 1974 , Page(s): 73 - 80
    Cited by:  Papers (29)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1633 KB)  

    Charge transport studies have been performed on SiO2 films using an electron-beam injection technique. MOS capacitors incorporating oxides grown at 1000 and 1100°C were investigated, including units fabricated at Hughes Aircraft using radiation hardening procedures. A comparison of beam-induced current vs field characteristics is made for devices with differing processing histori... View full abstract»

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  • The effects of radiation on the absorption and luminescence of fiber optic waveguides and materials

    Publication Year: 1974 , Page(s): 81 - 95
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    Irradiation of fiber optic waveguides with X-rays, gamma-rays, electrons, or neutrons can cause luminescence and losses in optical transmission. These effects have been measured, using pulsed and continuous radiation sources, in bulk materials and in most commercially available fiber bundles. Some important effects of dopants and impurities such as Ge, Ti, Fe, Al, and OH on radiation-resistance ha... View full abstract»

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  • Performance of Ga1−xAlxAs light emitting diodes in radiation environments

    Publication Year: 1974 , Page(s): 96 - 102
    Cited by:  Papers (8)
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    Addition of aluminum as a cation substituent in GaAs improves the relative radiation hardness of the GaAs light emitting diode, as deduced from both gamma and neutron irradiation experiments to 108 rads (Si) and 3.5&time;1013 neutrons/cm2, respectively. The gamma damage coefficient, Ky, shows a marked and unexpected decrease from 52 (rads (Si) .s)... View full abstract»

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  • Fast neutron irradiation damage on room temperature PbS detectors

    Publication Year: 1974 , Page(s): 103 - 106
    Cited by:  Papers (1)
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    The effects of high-energy neutron irradiation on the photoconductive properties of chemically-deposited PbS infrared detectors have been investigated in the I011 n/cm2 to 1014 n/cm2 fluence range. Long term degradation in signal response has been observed subsequent to room temperature irradiation of 2×1012 n/cm2 or greater ... View full abstract»

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  • Ionizing radiation dosimetry and noise in small geometry devices

    Publication Year: 1974 , Page(s): 107 - 112
    Cited by:  Papers (6)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1343 KB)  

    A code is presented to predict the statistics of transient responses to gamma radiation of rectangular solid state devices. Use of the chordlength distribution and assuming the radiation flux isotropic obviates use of Monte Carlo techniques, so that the code runs fast enough for exploratory use. It is discovered that, for small detectors, relatively large-area non-square thin detectors are advanta... View full abstract»

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  • Permanent and transient radiation induced losses in optical fibers

    Publication Year: 1974 , Page(s): 113 - 118
    Cited by:  Papers (11)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (1249 KB)  

    With the deployment of fiber optic data transmission links in military and domestic communications systems which may be subjected to various levels of ionizing radiation it is of interest to determine both the permanent and transient radiation-induced optical transmission loss in both fibers and relevant bulk glasses. Loss produced by both Co60 γ-irradiation and by pulsed electro... View full abstract»

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IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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