Scheduled System Maintenance:
On May 6th, system maintenance will take place from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). During this time, there may be intermittent impact on performance. We apologize for the inconvenience.
By Topic

Quantum Electronics, IEEE Journal of

Issue 3 • Date March 2013

Filter Results

Displaying Results 1 - 25 of 25
  • Front cover

    Publication Year: 2013 , Page(s): C1
    Save to Project icon | Request Permissions | PDF file iconPDF (220 KB)  
    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics publication information

    Publication Year: 2013 , Page(s): C2
    Save to Project icon | Request Permissions | PDF file iconPDF (33 KB)  
    Freely Available from IEEE
  • Table of contents

    Publication Year: 2013 , Page(s): 257 - 258
    Save to Project icon | Request Permissions | PDF file iconPDF (118 KB)  
    Freely Available from IEEE
  • Transmitted Ellipsometry Method for Extracting Physical Parameters of TN/VA/Inverse-TN Liquid Crystal Cells

    Publication Year: 2013 , Page(s): 259 - 266
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (610 KB) |  | HTML iconHTML  

    A transmitted ellipsometry method is proposed for extracting the ellipsometric parameters (Ψpp, Ψps, Ψsp , Δpp, Δps and Δsp) of twisted nematic (TN), vertical alignment (VA), and inverse-TN (ITN) liquid crystal (LC) cells from the output Stokes parameters corresponding to five input polarized lights. The validity of the proposed approach is confirmed by comparing the experimental values of Ψpp, Ψps, Ψsp, Δpp, Δps , and Δsp with the simulated values obtained via a Genetic Algorithm curve-fitting approach. In experiments, the cell gap, pretilt angle, twist angle, and rubbing direction of TNLC and the cell gap, pretilt angle, and rubbing direction of VALC are extracted successfully. The sensitivity analysis results reveal that the ellipsometric parameters of the TNLC cell are sensitive to the cell gap, pretilt angle, twist angle and rubbing direction. However, those of the VALC and ITNLC cells are sensitive only to the cell gap, pretilt angle and rubbing direction. Overall, the results presented in this paper show that the proposed transmitted ellipsometry method provides a straightforward and accurate means of determining the ellipsometric and physical parameters of TN, VA, and inverse-TN LC cells. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electron Beam Transverse Longitudinal Dynamics for SASE FEL Operation

    Publication Year: 2013 , Page(s): 267 - 273
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (871 KB) |  | HTML iconHTML  

    We present a procedure based on the combined use of analytical and numerical tools, useful for understanding the relative interplay between the various components of a free electron laser (FEL) self-amplified spontaneous emission (SASE) device. We take as reference case the Sorgente Pulsata Auto-amplificata di Radiazione Coerente (SPARC) experiment to analyze how electron beam transverse matching conditions affect the lasing conditions itself and discuss the possibility of implementing new configurations. In particular we show that the procedure can be extended to account for the effect of an on line inserted cavity, with the role of inducing a transverse longitudinal correlation allowing a transfer of the longitudinal and transverse emittance. We discuss the associated benefit on the FEL operation, with particular reference to the nonlinear harmonic generation. The possibility of completing the tool with regards to the beam degradation effects due to CSR is briefly accounted for. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Photonic Approach for Generating Randomness-Enhanced Physical Chaos Via Dual-Path Optically Injected VCSELs

    Publication Year: 2013 , Page(s): 274 - 280
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1128 KB) |  | HTML iconHTML  

    The randomness enhancement of physical chaos generated by slave vertical-cavity surface-emitting lasers (S-VCSEL) subject to dual-path polarization-preserved optical injection (DP-PPOI) from single master VCSEL (M-VCSEL) with variable-polarization optical feedback (VPOF) is investigated numerically. The randomness of chaotic signals is evaluated quantitatively by an information-theory-based quantifier, the permutation entropy. The randomness properties for S-VCSEL with DP-PPOI and S-VCSEL with single-path PPOI are compared, as well as the effects of injection strength, frequency detuning, and VPOF are considered. It is shown that, the PE values for S-VCSELs with two different injection schemes are both much higher than those for M-VCSEL, and increase initially and then decrease until they saturate at a constant level. The region of injection parameter space contributing to randomness-enhanced chaos in S-VCSEL can be greatly broadened by adopting DP-PPOI. The generation of randomness-enhanced chaos via photonic approach is highly desirable for high-speed random number generators based on chaotic VCSELs. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Closed-Form Approximations to the Threshold Quantities of Distributed-Feedback Lasers With Varying Phase Shifts and Positions

    Publication Year: 2013 , Page(s): 281 - 292
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2393 KB) |  | HTML iconHTML  

    We derive analytical approximations to the threshold gain, detuning, and power distribution ratios of distributed-feedback lasers with a variable phase shift at a variable longitudinal position. These closed-form approximations exhibit the direct influence of the grating parameters, and are in excellent agreement with the exact solution of the coupled mode equations for a wide range of phase shifts, positions, grating strengths and lengths. It is shown that the product of grating strength and phase shift offset distance from the grating center has a dominant influence on most threshold parameters. The threshold gain and output power splitting ratio grow exponentially with this product, whereas the intracavity peak power and the Q-factor of the cavity decay exponentially with it. It is also shown that a nonvanishing sine of the phase shift leads to a linear change of the detuning, a quadratic increase of the threshold gain, and a quadratic decrease of the output power splitting ratio, intracavity peak power, and Q-factor. Our results are independent of the source of the gain, such as semiconductor, rare-earth, and Raman fiber lasers, provided that the gain is approximately constant along the grating length and that reflections from facets can be neglected. As an example, we simulate a Raman DFB laser and demonstrate that our closed-form approximations are in perfect agreement with steady state results from involved time-domain simulations. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Spectroscopic Characteristics and Laser Performance of {\rm Nd}{:}{\rm Y}_{1.8}{\rm La}_{0.2}{\rm O}_{3} Transparent Ceramics

    Publication Year: 2013 , Page(s): 293 - 300
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1851 KB) |  | HTML iconHTML  

    (NdxY0.9-xLa0.1)2O3 (x=0.005-0.04) transparent ceramics were fabricated by conventional solid-state processing. The radiative spectral properties of the ceramic samples were evaluated by fitting the Judd-Ofelt model with the absorption and emission data. (NdxY0.9-xLa0.1)2O3 ceramics have broad absorption and emission bands with a radiative decay time of 328 μs. The absorption cross section at 806 nm and stimulated emission cross section at 1078 nm are calculated to be 1.53 ×10-20 and 5.22 × 10-20 cm2, respectively. The product of quantum efficiency and the ionic concentration (ηN) exhibited a peak value at 1.5 at% Nd3+ ion concentration, while the lifetime decreases dramatically from 300 μs (0.5 at% Nd) to 49 μs (4.0 at% Nd). With 1.0 at% Nd:Y1.8La0.2O3 ceramics acting as a laser medium, continuous-wave output power of 1.03 W was obtained at 1079.5 nm under an absorbed pump power of 7.2 W, corresponding to a slope efficiency of 18.4%. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optical Modal Features of a VECSEL-Based Optofluidic Device for Microparticle Sensing

    Publication Year: 2013 , Page(s): 301 - 308
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (918 KB) |  | HTML iconHTML  

    Recently, we reported the first successful fabrication of a marker-free microparticle detector with a unique working principle: when a particle is introduced into the cavity of an electrically pumped vertical-external-cavity surface-emitting laser, both the change of electrical operation as well as optical output parameters can be directly monitored, which enables phenotyping of properties, such as particle volume and refractive index. In the present contribution, we investigate this mechanism by numerical modeling of the wave-optical characteristics of the sensor. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analysis of Waveguide Effects on the Free Electron Laser Gain

    Publication Year: 2013 , Page(s): 309 - 313
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (241 KB) |  | HTML iconHTML  

    Using an approach unlike that in the literature, the effects induced by waveguides on the gain in infrared free-electron lasers are analyzed for both the low and the high gain regimes. By analyzing the relation of the detuning parameter to the radiation frequency and the waveguide parameter, the radiation frequency and the slippage are analyzed not merely for the resonance case, but for more general cases. Their dependence on the waveguide parameter is analytically presented for an arbitrary value of the detuning, the features of the gain and the requirements for the waveguide parameter can be easily revealed. It is found that the derivative of the detuning parameter with respect to the radiation wavenumber is proportional to the slippage. The analysis shows that the zero slippage always exists, and to have gain at the zero-slippage frequency corresponds to obtaining a gain curve with a single broadband peak. This can be realized for both the high gain and the low gain regions by choosing the appropriate dimension of the waveguide. It is also shown that the higher order modes of the waveguide have greater effect on the high gain than on the low gain regime. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Linewidth Narrowing and Power Scaling of Single-Frequency 2.X \mu{\rm m} GaSb-Based Semiconductor Disk Lasers

    Publication Year: 2013 , Page(s): 314 - 324
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1320 KB) |  | HTML iconHTML  

    A study of frequency stability and power scaling of single-mode GaSb-based 2.05-μm semiconductor disk laser (SDL) modules is presented. Single-mode emission and wavelength tuning over a range of 120 nm is accomplished by inserting a birefringent filter into the cavity. In order to evaluate the frequency stability, heterodyne beat-note linewidth measurements are performed for different time scales. Furthermore, a deeper insight in relevant noise mechanisms could be obtained by determining the Allan deviation and the frequency noise spectral density. For reducing the frequency noise, side-of-fringe and Pound-Drever-Hall locking are applied with the cavity length, and for the latter locking scheme also the pump diode current, controlled by the active feedback loop. That way, single-mode operation at a few kHz linewidth up to sampling times >;0.1 are achieved. Operating the SDL in a cavity configuration optimized for higher output powers, up to 1-W output power at a 100-μs sampled linewidth of 20 kHz were obtained when using active stabilization. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • All-Inorganic Light-Emitting Diodes Based on Solution-Processed Nontoxic and Earth-Abundant Nanocrystals

    Publication Year: 2013 , Page(s): 325 - 330
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (885 KB) |  | HTML iconHTML  

    We fabricate and characterize light-emitting diodes (LEDs) based on thin-films of NiO, Mn-doped ZnS, and n-ZnO nanoparticles acting as hole-transporting, emitting, and electron-transporting layers, respectively. We vary the thickness of the individual layers and record current-voltage and luminance-current characteristics. By examining the fitting of the current-voltage characteristics of these all-inorganic LEDs, we find that the hole- and electron-transporting layers lower barrier heights for hole- and electron-injection from the respective electrodes that correspondingly improve electro-luminescence (EL) output. The photoluminescence emission of Mn-doped ZnS nanoparticles and EL emission of the LEDs resembled implying that excitons formed in the doped nanostructures followed by a radiative transition between d-states of Mn-ions. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Mode Analysis of a Symmetric Hybrid Surface Plasmonic Waveguide for Photonic Integration

    Publication Year: 2013 , Page(s): 331 - 334
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (512 KB) |  | HTML iconHTML  

    A 2-D symmetric hybrid surface plasmonic waveguide is proposed and numerical analysis is carried out to study its supported mode properties, including the field distribution of the mode, the effective index, propagation length, and normalized mode area of the fundamental modes. Results show that this type of hybrid waveguide can support a longer propagation length fundamental mode as well as three types of high loss modes when the working wavelength is 1550 nm. By tuning the geometrical parameters and choosing a proper fundamental mode in terms of its characteristics, it is shown that this hybrid surface plasmonic waveguide has potential applications in low loss and high density photonic integration, biosensors, nanolasers, and nonlinear photonics. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Cherenkov Terahertz Generation by Electron Bunches in a Dielectric Lined Resonator

    Publication Year: 2013 , Page(s): 335 - 339
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (420 KB) |  | HTML iconHTML  

    The Cherenkov excitation of THz radiation by periodic succession of electron bunches in a dielectric lined resonator is investigated. A TM mode of the resonator, that comprises forward and backward moving slow waves, is resonantly excited by the electron bunches when the bunches are in near phase synchronism with the forward wave. The THz wave amplitude rises with successive bunches. Each drive bunch loses a significant amount of energy per unit length about 20%. For suitable parameters, the energy conversion efficiency to THz can exceed 10%. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Semiconductor Laser Dynamics With Two Filtered Optical Feedbacks

    Publication Year: 2013 , Page(s): 340 - 349
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2134 KB) |  | HTML iconHTML  

    We present an experimental and numerical study of the dynamics of a semiconductor laser subject to filtered optical feedbacks (FOFs) from two separate external cavities. Our results show that the inclusion of a second FOF introduces a rich control over the frequency of the dynamics. The period of frequency oscillations of the laser light is determined by the two time scales related to the feedback loops, and the frequency corresponding to this period is given by the average of the fundamental frequencies of the two cavities. The average frequency is dependent on the relative feedback from the cavities. Proper adjustment of the cavity lengths leads to the oscillations at a frequency which represents the average of the higher harmonics of one cavity and the fundamental frequency of the other cavity. The amplitudes of the frequency components in the single-FOF can be controlled by adding a second FOF, and in particular, the amplitude of the fundamental frequency is suppressed while the amplitude of the second harmonic becomes larger than that of the fundamental frequency. A cascade of period doubling bifurcations leads the dynamics to a chaotic state. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Avalanche Double Photodiode in 40-nm Standard CMOS Technology

    Publication Year: 2013 , Page(s): 350 - 356
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (704 KB) |  | HTML iconHTML  

    This paper investigates a silicon (Si) avalanche double photodiode (ADPD) fabricated in 40-nm standard CMOS technology. Two different types of double photodiodes (DPDs) will be introduced. The first one is a P-well/deep-N-well/P-substrate(PW/DNW/P-substrate) DPD, and the second one is a P+/N-well/P-substrate (P+/NW/P-substrate) DPD. The basic structure of the proposed ADPD is formed by P+/NW and NW/P-substrate junctions in which the avalanche effect occurs at the P+/NW junction. The P+/NW/P-substrate ADPD demonstrates responsivity of 0.84 A/W and a 3-dB electrical bandwidth of 0.7 GHz at 850 nm. For 660 nm, the ADPD shows a responsivity of 0.49 A/W with an electrical bandwidth of 1.8 GHz. For 520 nm, a responsivity of 2.04 A/W and an electrical bandwidth of 1.4 GHz are achieved. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Frequency-Tunable THz Source Based on Stimulated Polariton Scattering in {\rm Mg{:}LiNbO}_{3}

    Publication Year: 2013 , Page(s): 357 - 364
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (527 KB) |  | HTML iconHTML  

    We report a very compact, laser diode end-pumped THz laser source, which utilizes two resonators to generate frequency-tunable radiation across the range 1.53-2.82 THz via stimulated polariton scattering (SPS) in a Mg:LiNbO3 crystal. To the best of our knowledge, this THz system operates with the lowest pump power threshold (2.4 W), and highest conversion efficiency (6.45ţW average output power at 1.82 THz for 5 W input diode pump power) ever reported for a THz source based on SPS. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Novel Optical Multibistability and Multistability Characteristics of Coupled Active Microrings

    Publication Year: 2013 , Page(s): 365 - 374
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1197 KB) |  | HTML iconHTML  

    We theoretically demonstrate the novel multibistability and multistability features of two coupled active microrings. The continuation method is utilized to solve the parametric nonlinear equations of these two-active-microring systems, and the bifurcation theory is used to investigate the special points, which exist in continuation process. The novel results, which are interpreted by the nonlinear transmission spectrum, arise from gain saturation and the optical field coupling between these two nonlinear rings. Besides the common multibistability, which consists of serial S-shaped hysterical loops, the multibistability, which takes on novel shapes, such as the hat-shaped, knife-shaped, S-shaped butterfly, and inverted double-S-shaped is also demonstrated. The novel multistability includes inverted double-S-shaped tristability, woodpecker-shaped tristability, duke-shaped tristability, grasshopper-shaped tristability, and pseudo-quadristability. The electrical and optical control processes of the stability about these two coupled active microrings are also investigated. Results show that the on-off jumping threshold of this stability can be adjusted via changing the power of the light, which inputs from the add-drop port, and the type of this stability can also be changed by altering the injected current on each active microring. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Efficient Continuous-Wave 1053-nm Nd:GYSGG Laser With Passively Q-Switched Dual-Wavelength Operation for Terahertz Generation

    Publication Year: 2013 , Page(s): 375 - 379
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (364 KB) |  | HTML iconHTML  

    Research on an efficient continuous-wave Nd:GYSGG laser at 1053 nm with excellent stability is demonstrated. The maximum output power is 4.17 W, corresponding to the conversion efficiency of 33.9% and the slope efficiency of 42.92%. Using a Cr:YAG absorber, pulsed dual-wavelength operation at 1053 and 1058.4 nm is obtained, of which the maximum single pulse energy and peak power are 172.1 μJ and 26.1 kW, respectively, when the pulse width is 6.6 ns and the repetition rate is 4.3 kHz. A polarization property is observed, owing to the anisotropy of Cr:YAG. This stably Q-switched dual-wavelength laser is a good pump source for the generation of a terahertz wave at 1.53 THz. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Measurement of Gain and Device Performance of a 1050-nm Vertical External Cavity Surface Emitting Laser

    Publication Year: 2013 , Page(s): 380 - 385
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1393 KB) |  | HTML iconHTML  

    In this paper, we measure and analyze the pump power and wavelength dependent gain of an optically pumped infrared 1050-nm vertical external-cavity surface-emitting laser vertical external-cavity surface-emitting laser (VECSEL) developed for an application as a frequency doubled green laser in mobile projectors. Increasing the reflectivity of the chip coating from 3% to 20% for 1050-nm is found to result in a maximal gain of 7.9%, more than twice as high as that of the 3% coating, and in a spectral narrowing of the wavelength-dependent gain as a consequence of the enhanced coupling between the optical field and the quantum well gain medium. From our gain measurements, the wavelength dependent laser threshold can directly be obtained and compared to the VECSEL device characteristics. A very good agreement between the data extracted from the gain measurements and the measured laser threshold in VECSELs with different output mirrors is found. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Blank page]

    Publication Year: 2013 , Page(s): 386
    Save to Project icon | Request Permissions | PDF file iconPDF (5 KB)  
    Freely Available from IEEE
  • CFP- JSTQE on silicon photonics

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (303 KB)  
    Freely Available from IEEE
  • Transforming science into technology [advertisement]

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (1129 KB)  
    Freely Available from IEEE
  • IEEE Journal of Quantum Electronics information for authors

    Publication Year: 2013 , Page(s): C3
    Save to Project icon | Request Permissions | PDF file iconPDF (100 KB)  
    Freely Available from IEEE
  • [Blank page - back cover]

    Publication Year: 2013 , Page(s): C4
    Save to Project icon | Request Permissions | PDF file iconPDF (5 KB)  
    Freely Available from IEEE

Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Aaron R. Hawkins
Brigham Young University