# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 62
• ### Front cover

Publication Year: 2013, Page(s): C1
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2013, Page(s): C2
| PDF (150 KB)

Publication Year: 2013, Page(s):521 - 523
| PDF (72 KB)
• ### A Warm Welcome to a New T-ED Editor

Publication Year: 2013, Page(s): 524
| PDF (76 KB) | HTML
• ### Special Issue on Advanced Modeling of Power Devices and Their Applications

Publication Year: 2013, Page(s):525 - 527
| PDF (127 KB) | HTML
• ### Role of Simulation Technology for the Progress in Power Devices and Their Applications

Publication Year: 2013, Page(s):528 - 534
Cited by:  Papers (11)
| | PDF (1328 KB) | HTML

The modern power electronics era started with the commercialization of the silicon-controlled rectifier in 1957, since when power electronics systems have been installed in a wide range of applications from appliances to traction and utility systems as the technology has advanced. Meanwhile, simulation tools have played an important role in the research and development of power semiconductors and ... View full abstract»

• ### Analytical Modeling of IGBTs: Challenges and Solutions

Publication Year: 2013, Page(s):535 - 543
Cited by:  Papers (7)
| | PDF (808 KB) | HTML

With the availability of advanced computing capability, it is fashionable to analyze and design insulated-gate bipolar transistors (IGBTs) using sophisticated 2-D and 3-D numerical simulation tools. However, analytical modeling of IGBTs allows a deeper understanding of the physics of operation, which can foster innovation. This paper reviews 1-D analytical models developed for the IGBT on-state ch... View full abstract»

• ### Application of Electrical Circuit Simulations in Hybrid Vehicle Development

Publication Year: 2013, Page(s):544 - 550
Cited by:  Papers (2)
| | PDF (1318 KB) | HTML

This paper describes the application of electrical circuit simulations in intelligent power module development for hybrid vehicles, electric vehicles, and fuel cell vehicles. The limitations of the conventional design and simulation systems are discussed, and efforts for overcoming these limitations are described. The introduction of a physics-based insulated-gate-bipolar-transistor model with a s... View full abstract»

• ### Limiting Factors of the Safe Operating Area for Power Devices

Publication Year: 2013, Page(s):551 - 562
Cited by:  Papers (17)
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This paper gives an overview about different failure mechanisms which limit the safe operating area of power devices. It is demonstrated how the device internal processes can be investigated by means of device simulation. For instance, the electrothermal simulation of high-voltage diode turn-off reveals how a backside filament transforms into a continuous filament connecting the anode and cathode ... View full abstract»

• ### Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching

Publication Year: 2013, Page(s):563 - 570
Cited by:  Papers (26)
| | PDF (1331 KB) | HTML

The physics of the different failure modes that limit the maximum avalanche capability during unclamped inductive switching (UIS) in punchthrough (PT) and not PT (NPT) insulated-gate bipolar transistor (IGBT) structures is analyzed in this paper. Both 3-D electrothermal numerical simulations and experimental evaluations support the theoretical analysis. Experimental results for UIS test show that,... View full abstract»

• ### HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design

Publication Year: 2013, Page(s):571 - 579
Cited by:  Papers (6)
| | PDF (2015 KB) | HTML

A physics-based compact model of insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation is presented. The compact model is constructed as a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) part and a bipolar junction transistor (BJT) part with a conductivity-modulated base resistance in between them and is named “HiSIM-IGBT.” The... View full abstract»

• ### A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact Models

Publication Year: 2013, Page(s):580 - 586
Cited by:  Papers (2)
| | PDF (1054 KB) | HTML

A sequential parameter extraction technique describing the fitting targets and related parameters for compact insulated-gate bipolar transistor (IGBT) models is presented. Using 2-D device simulation data for a trench-type IGBT as reference, the performance of HiSIM-IGBT as an example of a compact IGBT model is compared to an IGBT macromodel. Parameter extraction with the compact model is fast and... View full abstract»

• ### Modeling of Soft-Switching Losses of IGBTs in High-Power High-Efficiency Dual-Active-Bridge DC/DC Converters

Publication Year: 2013, Page(s):587 - 597
Cited by:  Papers (36)  |  Patents (1)
| | PDF (2229 KB) | HTML

Soft-switching techniques are very attractive and often mandatory requirements in medium-voltage and medium-frequency applications such as solid-state transformers. The effectiveness of these soft-switching techniques is tightly related to the dynamic behavior of the internal stored charge in the utilized semiconductor devices. For this reason, this paper analyzes the behavior of the internal char... View full abstract»

• ### Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive Turnoff

Publication Year: 2013, Page(s):598 - 605
Cited by:  Papers (7)
| | PDF (1323 KB) | HTML

The clamped inductive turnoff failure of nonpunchthrough insulated-gate bipolar transistors (IGBTs) is investigated under overcurrent and overtemperature events. First, their electrical and physical signatures are experimentally determined. Second, physical TCAD simulations are carried out considering the current mismatch among the cells from the chip core, gate runner, and edge termination areas.... View full abstract»

• ### Accurate Power Circuit Loss Estimation Method for Power Converters With Si-IGBT and SiC-Diode Hybrid Pair

Publication Year: 2013, Page(s):606 - 612
Cited by:  Papers (5)
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An accurate power circuit loss estimation method has been developed for designing power converters with hybrid pairs of silicon (Si) insulated-gate bipolar transistor (Si-IGBT) and silicon carbide (SiC) Schottky barrier diode/SiC p-i-n diode. An analytical model of the switching losses of the hybrid pairs is proposed to achieve high accuracy and short calculation time. The nonlinearity of the devi... View full abstract»

• ### Physical Models for SiC and Their Application to Device Simulations of SiC Insulated-Gate Bipolar Transistors

Publication Year: 2013, Page(s):613 - 621
Cited by:  Papers (9)
| | PDF (1218 KB) | HTML

Important physical models for 4H silicon carbide (4H-SiC) are constructed based on the literature and experiments on the physical properties of 4H-SiC. The obtained physical models are implemented into a commercial device simulator, which is used for examining the potential performance of SiC insulated-gate bipolar transistors (IGBTs). Device simulation using these new physical models shows that t... View full abstract»

• ### Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation

Publication Year: 2013, Page(s):622 - 629
Cited by:  Papers (10)
| | PDF (1779 KB) | HTML

This paper presents a compact model of SiC insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation. Here, we focus on the modeling of important specific features in the turn-off characteristics of the 4H-SiC IGBT, which are investigated with a 2-D device simulator, at supply voltages higher than 5 kV. These features are found to originate from the punch-through effect of... View full abstract»

• ### Behavioral Approach to SiC MPS Diode Electrothermal Model Generation

Publication Year: 2013, Page(s):630 - 638
Cited by:  Papers (7)
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A comprehensive approach to generation of electrothermal models of silicon carbide (SiC) power Schottky diodes is presented. Both the electrical and thermal parts of the model are behavioral. The electrical one was developed in order to accurately represent the nonlinear properties of SiC merged PiN Schottky (MPS) diodes. Its parameters are automatically obtained with a dedicated numerical procedu... View full abstract»

• ### A Compact Physical AlGaN/GaN HFET Model

Publication Year: 2013, Page(s):639 - 645
Cited by:  Papers (3)
| | PDF (1360 KB) | HTML

We introduce a physics-based compact model for AlGaN/GaN heterojunction field-effect transistors (HFETs) that is suitable for both RF microwave and switched-mode power supply (SMPS) applications, so that RF techniques can help determine HFET performance in SMPS applications. Such simulations can predict the on-resistance, slew rate, and breakdown voltage from the physical design of the transistor.... View full abstract»

• ### GaN Power Transistor Modeling for High-Speed Converter Circuit Design

Publication Year: 2013, Page(s):646 - 652
Cited by:  Papers (17)
| | PDF (1143 KB) | HTML

A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation methods. The simulated power losses were consistent with measured results in dc-dc converters constru... View full abstract»

• ### The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs

Publication Year: 2013, Page(s):653 - 661
Cited by:  Papers (11)
| | PDF (1928 KB) | HTML

This paper reviews the industry-standard surface-potential-based compact model HiSIM_HV for high-voltage MOSFETs, as, e.g., the lateral double-diffused MOS transistor, and introduces important improvements implemented in the second-generation model versions (HiSIM_HV2), for which open source code has been released since October 2011. HiSIM_HV solves the Poisson equation consistently within the int... View full abstract»

• ### An Accurate and Robust Compact Model for High-Voltage MOS IC Simulation

Publication Year: 2013, Page(s):662 - 669
Cited by:  Papers (4)
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This paper presents an accurate and robust compact model for high-voltage MOS (HV-MOS) transistors for high-voltage IC simulation. This model describes the extended-drain MOS and lateral double-diffused HV-MOS effects such as quasi-saturation, gm reduction, self-heating, impact ionization, output conductance, and charge/capacitance effects accurately. In addition, the quasi-saturation effec... View full abstract»

• ### Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Publication Year: 2013, Page(s):670 - 676
Cited by:  Papers (4)
| | PDF (1100 KB) | HTML

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 200 V at the drain. LF noise spectra of n- and p-channel LDMOSFETs were measured over a large r... View full abstract»

• ### A Physics-Based Analytical $hbox{1}/f$ Noise Model for RESURF LDMOS Transistors

Publication Year: 2013, Page(s):677 - 683
Cited by:  Papers (8)
| | PDF (1396 KB) | HTML

A physics-based model has been implemented to describe the low-frequency noise behavior in differently processed reduced-surface-field lateral double-diffused MOS devices. The developed model is based upon the correlated carrier number and the mobility fluctuation theory known as the unified model but has been modified to account for the fluctuations in the extended drain and the channel. Unlike t... View full abstract»

• ### Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETs

Publication Year: 2013, Page(s):684 - 690
| | PDF (1471 KB) | HTML

MOSFET capacitance values in high-voltage laterally diffused MOSFETs, including the channel impurity concentration, which tails off along the channel from the source side to the drain side, are investigated. This pertinent doping inhomogeneity of the intrinsic MOSFET channel induces an additional electrostatic contribution to the amount of internal charges. With an emphasis on the deviations from ... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy