By Topic

IEE Proceedings G - Circuits, Devices and Systems

Issue 6 • Date Dec. 1993

Filter Results

Displaying Results 1 - 13 of 13
  • Current-mode oscillator realisation using a voltage-to-current transducer in CMOS technology

    Publication Year: 1993, Page(s):462 - 464
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (179 KB)

    A voltage-to-current transducer implementable in CMOS integrated circuit technology is described. Admittance parameter formulation reveals the potential for implementation of an inductor using the gyrator concept. The inductor is applied to build a current-mode oscillator. Simulation results are provided.<> View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Digital filters implementation using DPCM video signal processing

    Publication Year: 1993, Page(s):453 - 461
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (830 KB)

    A new realisation of DPCM video signal/image processing is introduced to increase the throughput rate and reduce the hardware cost of the 2D systolic digital filters. This achieved by using a DPCM coding system with a 2D predictor and a 27-level symmetric nonuniform quantiser prior to processing. The advantage of the symmetric nonuniform quantiser is that the size of memory required for multiplica... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Capacitance-time transient characteristics of pulsed MOS capacitor application in measurement of semiconductor parameters

    Publication Year: 1993, Page(s):449 - 452
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (245 KB)

    Using Rabbani's model for generation width, a differential equation, which describes the capacitance-time (C-t) transient characteristics of pulsed MOS capacitors was obtained. The theoretical (C-t) transient characteristics can be obtained by integrating this differential equation. It has also been shown that the minority generation lifetime of semiconductors can be determined by matching an expe... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • New multibit delta-sigma modulator structure with reduced sensitivity to the D/A conversion error

    Publication Year: 1993, Page(s):444 - 448
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (427 KB)

    A new structure is presented for multibit delta-sigma modulators, where the D/A conversion error as well as the A/D conversion error (the quantisation noise) is spectrally shaped. Thus the requirement on the accuracy of the D/A convertor is relaxed without sacrificing the advantages of using a multibit A/D convertor in delta-sigma modulators. The new structure also has a feature of design flexibil... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Power dissipation models and performance improvement techniques for CMOS inverters with RC line and tree interconnections

    Publication Year: 1993, Page(s):437 - 443
    Cited by:  Patents (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (480 KB)

    Physical power dissipation models of CMOS inverters with RC line and tree interconnection networks are presented. Compared to SPICE simulation results, the maximum error in the model calculated results using the models is 12% for power dissipation in CMOS inverters with different RC values in each branch of the tree networks, different gate sizes, device parameters, and even input excitation wavef... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Liquid-helium temperature hot-carrier degradation of Si p-channel MOSTs

    Publication Year: 1993, Page(s):431 - 436
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (436 KB)

    Results of a systematic study of the hot-carrier degradation of pMOSTs stressed at 4.2 K are reported. To a first approximation, the same shifts are observed as for room-temperature stress: a systematic increase in the drain current, both in linear operation and in saturation, caused by a positive shift of the threshold voltage. The transconductance is hardly affected for the devices and stress co... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Analytically extracted ZTC point for GaAs MESFET

    Publication Year: 1993, Page(s):424 - 430
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (550 KB)

    Some current-voltage characteristics of GaAs MESFET at elevated temperatures have been measured and the existence of zero temperature coefficient (ZTC) points in the drain current of DFETs and EFETs are presented. At these points of operation, with a specific value of gate bias, the device drain current characteristics are stable in temperature. The ZTC point for the saturation region of operation... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Class E resonant low di/dt rectifier

    Publication Year: 1993, Page(s):417 - 423
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (403 KB)

    An analysis and experimental verification of a Class E voltage-driven resonant low di/dt rectifier are given. The circuit contains two resonant components: an inductor and a capacitor. Design equations are derived using Fourier series techniques. A prototype of the rectifier was built and tested at 500 KHz and an output voltage of 5 V. The theoretical and experimental results were in good agreemen... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Log-domain filtering: an approach to current-mode filtering

    Publication Year: 1993, Page(s):406 - 416
    Cited by:  Papers (143)  |  Patents (13)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (869 KB)

    A novel approach to filter design, based on Adams' 'log-domain' filters, is proposed that yields a truly current-mode circuit realisation. Adams' idea, which was introduced in a limited context, is generalised to permit a complete distortionless synthesis procedure, which results in circuit implementations readily realisable using complementary bipolar processes. It is shown that, by introducing a... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Asymptotic stability of equilibrium points in dynamical neural networks

    Publication Year: 1993, Page(s):401 - 405
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (304 KB)

    In most applications of feedback neural networks, such as the realisation of associative memories, the asymptotic stability of specific equilibrium points is the main design requirement. Sufficient conditions are presented which simplify the checking that an isolated equilibrium point is asymptotically stable. Then, these conditions are generalised to the characterisation of all equilibrium points... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Theoretical and experimental results for the inversion channel heterostructure field effect transistor

    Publication Year: 1993, Page(s):392 - 400
    Cited by:  Patents (23)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (708 KB)

    New theoretical and experimental findings are presented to address the modelling needs of inversion channel optoelectronic integrated circuit (OEICs). This FET is well suited to OEICs since the gate is an ohmic contact controlling the channel conductivity from a substantial distance. Consequently, the region around the channel is formed as a graded index structure with a single or multiple quantum... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Logic design based on negative differential resistance characteristics of quantum electronic devices

    Publication Year: 1993, Page(s):383 - 391
    Cited by:  Papers (4)  |  Patents (53)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (717 KB)

    New quantum electronic devices such as resonant tunnelling diodes and transistors have negative differential resistance characteristics that can be exploited to design novel high-speed circuits. The high intrinsic switching speed of these devices, combined with the novel circuit structures used to implement standard logic functions, leads to ultrafast computing circuits. The new circuit structures... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Equivalent circuit for a GaAs CCD

    Publication Year: 1993, Page(s):377 - 382
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (413 KB)

    An equivalent circuit model was proposed for the charge transfer mechanisms in a GaAs charge coupled device (CCD). Realistic simulations were carried out to assess the model at different transfer times and for different sizes of the charge packet. A comparison was also made with an analytical model and the results were quite close. Simulations of the input and the output stages of the device were ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.