Proceedings of the IEEE

Issue 12 • Dec 1993

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Displaying Results 1 - 6 of 6
  • Silicon-based optoelectronics

    Publication Year: 1993, Page(s):1687 - 1706
    Cited by:  Papers (404)  |  Patents (18)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (2064 KB)

    The decade of the 1990's is an opportune time for scientists and engineers to create cost-effective silicon “superchips” that merge silicon photonics with advanced silicon electronics on a silicon substrate. We can expect significant electrooptical devices from Column IV materials (Si, Ge, C and Sn) for a host of applications. The best devices will use strained-layer epitaxy, doped het... View full abstract»

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  • Asymptotic and hybrid techniques for electromagnetic scattering

    Publication Year: 1993, Page(s):1658 - 1684
    Cited by:  Papers (40)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (2460 KB)

    Asymptotic and hybrid methods are widely used to compute the Radar Cross Section (RCS) of objects that are large compared to the wavelength of the incident wave, and the objective of this paper is to present an overview of a number of these methods. The cornerstone of the asymptotic methods is the Geometrical Theory of Diffraction (GTD), which was originally introduced by J. B. Keller, and which r... View full abstract»

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  • GaAs-based heterojunction bipolar transistors for very high performance electronic circuits

    Publication Year: 1993, Page(s):1709 - 1726
    Cited by:  Papers (43)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1648 KB)

    This paper reviews the principles and status of AlGaAs/GaAs heterojunction bipolar transistor technology. Comparisons of this technology with Si bipolar transistor and GaAs field-effect transistor technologies are made. Epitaxial materials, fabrication processes, transistor DC and RF characteristics, and modeling of AlGaAs/GaAs HBT's are described. Key areas of HBT application are also highlighted View full abstract»

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  • GaAs HBT's for high-speed digital integrated circuit applications

    Publication Year: 1993, Page(s):1727 - 1743
    Cited by:  Papers (16)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1404 KB)

    GaAs HBT technology has emerged as one of the most important developments for digital circuits operating at clock frequencies of 100 MHz and higher. High-speed frequency dividers operating as high as 34.8 GHz and VLSI circuits as complex as 32-b CPU's operating at 200-MHz clock rate have been demonstrated. This paper reviews the role of GaAs HBT technologies for high-speed digital IC applications.... View full abstract»

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  • GaAs HBT's for analog circuits

    Publication Year: 1993, Page(s):1744 - 1761
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1588 KB)

    Silicon bipolar integrated circuit (IC) technology has dominated the analog IC world for over two decades. As the push for wider bandwidths with higher precision continues, the emergence of GaAs HBT technology is destined to challenge silicon bipolar's domination at the high end of the analog market. This paper discusses the analog application areas best suited to GaAs HBT technology, points out i... View full abstract»

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  • GaAs HBT's for microwave integrated circuits

    Publication Year: 1993, Page(s):1762 - 1785
    Cited by:  Papers (35)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (2180 KB)

    The status of the microwave GaAs heterojunction bipolar transistor (HBT) technology is reviewed. Microwave circuits for advanced military and commercial systems continue to increase their dependence on the performance, functionality, and cost of active components fabricated using solid-state technology. The performance advantages provided by GaAs HBT's, for several critical circuit applications, h... View full abstract»

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North Carolina State University