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Device and Materials Reliability, IEEE Transactions on

Issue 4 • Date Dec. 2012

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  • [Front cover]

    Publication Year: 2012 , Page(s): C1
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  • IEEE Transactions on Device and Materials Reliability publication information

    Publication Year: 2012 , Page(s): C2
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  • Table of Contents

    Publication Year: 2012 , Page(s): 585
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  • What is in a page charge?

    Publication Year: 2012 , Page(s): 586
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  • Editorial Kudos to Our Reviewers

    Publication Year: 2012 , Page(s): 587
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  • Foreword for the Special Issue on ESD Technology

    Publication Year: 2012 , Page(s): 588
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  • HBM ESD Robustness of GaN-on-Si Schottky Diodes

    Publication Year: 2012 , Page(s): 589 - 598
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1921 KB) |  | HTML iconHTML  

    The ESD robustness of GaN-on-Si Schottky diodes is investigated using on-wafer HBM and TLP. Both forward and reverse diode operation modes are analyzed as a function of device geometry, which strongly impact the corresponding failure mechanism. In forward mode, the anode-to-cathode length reduction and the total device width increase are beneficial for ESD robustness; however, in reverse mode, the... View full abstract»

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  • Investigation of Modeling System ESD Failure and Probability Using IBIS ESD Models

    Publication Year: 2012 , Page(s): 599 - 606
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1570 KB) |  | HTML iconHTML  

    Due to growing number of embedded electronics, estimating failure related to system-level electrostatic discharge (ESD) consideration has become a major concern. In this paper, a behavioral modeling methodology to predict ESD failures at system level is proposed and validated. The proposed models enable time-domain simulation to determine the voltage and current waveforms inside and outside an int... View full abstract»

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  • Investigation on Statistical Tools to Analyze Repetitive-Electrostatic-Discharge Endurance of System-Level Protections

    Publication Year: 2012 , Page(s): 607 - 614
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1118 KB) |  | HTML iconHTML  

    To fulfill the requirement of final-user uncontrolled ESD environment, system-level ESD protection devices must survive repeated ESD stresses. This paper deals with the assessment of ESD protection device reliability toward repetitive stresses using statistical distribution. The proposed method could lead to better ESD robustness improvement than the simplistic “higher ESD robustness”... View full abstract»

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  • A Review on the ESD Robustness of Drain-Extended MOS Devices

    Publication Year: 2012 , Page(s): 615 - 625
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2457 KB) |  | HTML iconHTML  

    This paper reviews electrostatic discharge (ESD) investigations on laterally diffused MOS (LDMOS) and drain-extended MOS (DeMOS) devices. The limits of the safe operating area of LDMOS/DeMOS devices and device physics under ESD stress are discussed under various biasing conditions and layout schemes. Specifically, the root cause of early filament formation is highlighted. Differences in filamentar... View full abstract»

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  • Open Access

    Publication Year: 2012 , Page(s): 626
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  • IEEE Copyright Form

    Publication Year: 2012 , Page(s): 627 - 628
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  • 2012 Index IEEE Transactions on Device and Materials Reliability Vol. 12

    Publication Year: 2012 , Page(s): 629 - 643
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  • Blank page

    Publication Year: 2012 , Page(s): C4
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  • IEEE Transactions on Device and Materials Reliability information for authors

    Publication Year: 2012 , Page(s): C3
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Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.