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Electron Devices Society, IEEE Journal of the This IEEE Publication is an Open Access only journal. Open Access provides unrestricted online access to peer-reviewed journal articles.

Issue 1 • Date Jan. 2013

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Displaying Results 1 - 7 of 7
  • Table of contents

    Page(s): C1
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    Freely Available from IEEE
  • IEEE Journal of the Electron Devices Society publication information

    Page(s): C2
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    Freely Available from IEEE
  • Editorial [EDS's strategy for Open Access]

    Page(s): 1 - 8
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  • Carbon Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview

    Page(s): 9 - 20
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    Carbon-based electronics is an emerging field. Its present progress is largely dominated by the materials science community due to the many still existing materials-related obstacles for realizing practically competitive transistors. Compared to graphene, carbon nanotubes provide better properties for building field-effect transistors, and thus, have higher chances for eventually becoming a production technology. View full abstract»

    Open Access
  • On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

    Page(s): 21 - 27
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    The performance potential and scaling characteristics of thin-base SOI symmetric lateral bipolar transistors were examined using 1-D analytic equations for the currents and capacitances. The device can operate at collector current densities >100 mA/μm2, and it scales similarly to CMOS in terms of density. The physical base width is scalable to less than 20 nm. Multiple devices of different specifications can be integrated on a chip. A sample design is shown to have fT > 200 GHz, fmax >1 THz, VA > 4V, and a self gain of 60. A balanced design is shown to have 350-GHz fT and 700-GHz fmax, VA of 2.4 V, and a self gain of 20. These results are superior to those reported for 32 nm SOI CMOS. The results suggest a need to rethink bipolar circuit design. They also suggest opportunities for novel bipolar and BiCMOS circuits. The devices in high-speed Si-base bipolar circuits operate at about 1.0 V. The path toward 0.5 V bipolar circuits is to use semiconductors with smaller bandgap, such as Ge. View full abstract»

    Open Access
  • IEEE Journal of Electron Devices Society (J-EDS)

    Page(s): 28
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  • IEEE Journal of the Electron Devices Society information for authors

    Page(s): C3
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Aims & Scope

The IEEE Journal of the Electron Devices Society (J-EDS) is an open access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices.

Full Aims & Scope

Meet Our Editors

Editor-In-Chief
Dr. Renuka P. Jindal