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IEEE Microwave Magazine

Issue 7 • Nov.-Dec. 2012

 This issue contains several parts.Go to:  Part Supplement 

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Displaying Results 1 - 25 of 28
  • [Front Cover]

    Publication Year: 2012, Page(s): C1
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  • [Table of Contents]

    Publication Year: 2012, Page(s):3 - 4
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  • Society Listing

    Publication Year: 2012, Page(s): 4
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  • Season's Greetings [From the Editor's Desk]

    Publication Year: 2012, Page(s):6 - 10
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  • "The Future Isn't What It Used to Be" - Yogi Berra [President's Column]

    Publication Year: 2012, Page(s):12 - 14
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  • Change Has Changed! [MicroBusiness]

    Publication Year: 2012, Page(s):18 - 20
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4411 KB) | HTML iconHTML

    Change has always been a part of business. But has it always been the same kind of change? Looking back to the 1980s, it seems that every once in a while we had to deal with something changing. Today it seems like the change is constant. We are constantly managing through changes, adapting what we do, how we do it, and who we do it for. There is no opportunity to settle into a comfortable routine.... View full abstract»

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  • Gigabit Wi-Fi [Microwave Surfing]

    Publication Year: 2012, Page(s):22 - 26
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  • Transistor Modeling - With an Eye Toward the Future [From the Guest Editor's Desk]

    Publication Year: 2012, Page(s):24 - 26
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  • Transistor Modeling and TCAD

    Publication Year: 2012, Page(s):28 - 35
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2106 KB) | HTML iconHTML

    The semiconductor industry faces two types of complexity. One is associated with generating and managing large amounts of data that define physical layouts. The other is associated with the nonlinear behaviors of semiconductor processes, devices, and circuits. Computer-aided design (CAD) tools help engineers deal with both types of complexity. Electronic design automation (EDA) software handles a ... View full abstract»

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  • Modeling and Simulation of Terahertz Devices

    Publication Year: 2012, Page(s):36 - 44
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4139 KB) | HTML iconHTML

    Research and development in the exploitation of millimeter and submillimeter waves has undergone impressive growth during the last decade due to the potential technological uses of the terahertz (THz) portion of the spectrum with its unique location between the microwave (i.e., electronic) and the optical domains, which nominally corresponds to the frequency range from 300 GHz (submillimeter wave)... View full abstract»

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  • Future Device Modeling Trends

    Publication Year: 2012, Page(s):45 - 59
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4922 KB) | HTML iconHTML

    Good transistor models are essential for efficient computer-aided-design (CAD) of nonlinear microwave and RF circuits, monolithic microwave integrated circuits (MMICs), power amplifiers (PAs), and nonlinear RF systems. Increasingly complicated demands of the various semiconductor technologies (e.g., GaAs pHEMTs, InP double heterojunction bipolar transistors (DHBTs), silicon on insulator (SOI), LDM... View full abstract»

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  • A Glimpse of the Future

    Publication Year: 2012, Page(s):60 - 69
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2245 KB) | HTML iconHTML

    The RF and microwave world has largely been exempt from the rigors of Moore's law, whereas aggressive scaling in the digital world has been the norm for several decades. But now, as CMOS transistors have picosecond switching speeds and transition frequencies in the tens to 100s of GHz, there is an opportunity for the integration of RF and microwave components into a complete system on a single int... View full abstract»

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  • An Integrated Electrothermal Design Primer Using an SiGe HBT PA [Application Notes]

    Publication Year: 2012, Page(s):70 - 80
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (10622 KB) | HTML iconHTML

    The integrated design flow that links simulation, layout, and electromagnetic (EM) analysis is the foundation for modern RF/microwave integrated circuit (IC) design. The inclusion of thermal simulation in this flow is now possible with modern thermal solvers linked into RF/microwave integrated design tools. Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) power amplifier (PA) desig... View full abstract»

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  • It's All About the Packaging (review of, "LCP for Microwave Packages and Modules" (Pham, A.-V.H., et at; 2012) [Book/Software Reviews]

    Publication Year: 2012, Page(s):81 - 82
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  • Recently Published Books [Book/Software Reviews]

    Publication Year: 2012, Page(s):82 - 83
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  • Britton Vincent [In Memoriam]

    Publication Year: 2012, Page(s): 84
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  • IEEE Region 1: Speaking Tour with Dr. Shiban Koul [Around the Globe]

    Publication Year: 2012, Page(s):85 - 87
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  • Share the Benefits [Around the Globe]

    Publication Year: 2012, Page(s): 87
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  • MTT-S Graduate Student Fellowship Awards [Education News]

    Publication Year: 2012, Page(s):88 - 93
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  • Microwave New Products [New Products]

    Publication Year: 2012, Page(s):90 - 93
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  • From Nanoelectronics to the Advanced Microwave Applications-Conferences of the Fifth Microwave and Radar Week (MRW2012) [Conference Report]

    Publication Year: 2012, Page(s):94 - 96
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  • WAMICON 2013

    Publication Year: 2012, Page(s): 97
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  • Conference Calendar

    Publication Year: 2012, Page(s): 98
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  • Pearls Before Swine

    Publication Year: 2012, Page(s): 100
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  • AMTA 2013

    Publication Year: 2012, Page(s): 101
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Aims & Scope

IEEE Microwave Magazine is intended to serve primarily as a source of information of interest to professionals in the field of microwave theory and techniques.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Alfy Riddle
M/A-COM Technology Solutions
microwave.editor@ieee.org

408-506-0972