# IEEE Transactions on Nanotechnology

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Displaying Results 1 - 25 of 36
• ### [Front cover]

Publication Year: 2012, Page(s): C1
| PDF (135 KB)
• ### IEEE Transactions on Nanotechnology publication information

Publication Year: 2012, Page(s): C2
| PDF (136 KB)

Publication Year: 2012, Page(s):861 - 862
| PDF (171 KB)
• ### An On–Off Mode RTD Oscillator Operating at Extremely Low Power Consumption

Publication Year: 2012, Page(s):863 - 865
Cited by:  Papers (7)
| | PDF (562 KB) | HTML

A resonant tunneling diode (RTD)-based microwave on-off mode oscillator for on-off keying (OOK) transceiver applications operating at extremely low power consumption is proposed. In order to achieve the low-power operation, the negative differential conductance characteristic at a low-voltage arising from quantum effects of the RTD is used for RF signal generation. The fabricated integrated circui... View full abstract»

• ### Band Gap Blueshift of Hollow Quantum Dots

Publication Year: 2012, Page(s):866 - 870
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The nanostructures with negative curvature have fascinating properties induced by a large fraction of undercoordinated atoms in inner and outer surfaces as comparable to the nanostructures with positive curvature such as nanocrystals or quantum dots. Herein, we theoretically proposed the hollow quantum dot (HQD) as a new kind of the nanostructures with the negative curvature. A sandwiched structur... View full abstract»

• ### Two-State Trap-Assisted Tunneling Current Characteristics in $hbox{Al}_{bf 2}hbox{O}_{bf 3}/hbox{SiO}_{bf 2}/hbox{SiC}$ Structures With Ultrathin Dielectrics

Publication Year: 2012, Page(s):871 - 876
Cited by:  Papers (2)
| | PDF (935 KB) | HTML

The two-state current conduction phenomenon in Al2O3/SiO2/SiC stacked structure was investigated by varying the process of dielectric preparation. All the devices exhibited obvious two-state current conduction behavior under I-V measurements. The threshold voltage of trap-assisted tunneling current conduction in the devices with Al2O3<... View full abstract»

• ### Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency

Publication Year: 2012, Page(s):877 - 883
Cited by:  Papers (30)
| | PDF (671 KB) | HTML Media

We demonstrate a 500-nm graphene frequency doubler with a record 3-GHz bandwidth, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency. The maximum conversion gain of graphene ambipolar frequency doublers is determined to approach a near lossless value in the quantum cap... View full abstract»

• ### Programmable On-Chip ESD Protection Using Nanocrystal Dots Mechanism and Structures

Publication Year: 2012, Page(s):884 - 889
Cited by:  Papers (11)
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This paper reports a new nanocrystal quantum-dot (NC-QD)-based tunable on-chip electrostatic discharge (ESD) protection mechanism and structures. Experiments validated the programmable ESD protection concept. Prototype structures achieved an adjustable ESD triggering voltage range of 2.5 V, very fast response to ESD transients of rising time tr ~ 100 ps and pulse duration td; ~ ns, E... View full abstract»

• ### 40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes

Publication Year: 2012, Page(s):890 - 895
Cited by:  Papers (3)
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An integrated resonant tunneling diode (RTD)-based 4:1 multiplexer core for low power consumption and high-speed operation is proposed. The proposed 4:1 multiplexer core is designed based on a power-efficient negative differential resistance (NDR) circuit topology, which actively utilizes the unique NDR characteristics of the RTD. The proposed IC is comprised of two RTD-based 2:1 multiplexers and ... View full abstract»

• ### An Ultrafast Image Recovery and Recognition System Implemented With Nanomagnets Possessing Biaxial Magnetocrystalline Anisotropy

Publication Year: 2012, Page(s):896 - 901
Cited by:  Papers (4)
| | PDF (432 KB) | HTML

A circular magnetic disk with biaxial magnetocrystalline anisotropy has four stable magnetization states which can be used to encode a pixel's shade in a black/gray/white image. By solving the Landau-Lifshitz-Gilbert equation, we show that if moderate noise deflects the magnetization slightly from a stable state, it always returns to the original state, thereby automatically denoising the corrupte... View full abstract»

• ### Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

Publication Year: 2012, Page(s):902 - 906
Cited by:  Papers (5)
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In this paper, we report for the first time making multi-gate buckled self-aligned dual Si nanowires including two sub-100 nm cross-sectional cores on bulk Si substrate using optical lithography, hard mask/spacer technology, and local oxidation. ≈0.8 GPa uniaxial tensile stress was measured on the buckled dual nanowires using micro-Raman spectroscopy. The buckled multigate dual Si nanowires... View full abstract»

• ### Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

Publication Year: 2012, Page(s):907 - 917
Cited by:  Papers (21)
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Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance, and nonvolatility. However, the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure ... View full abstract»

• ### Proton Irradiation-Induced Electrostatic Modulation in ZnO Nanowire Field-Effect Transistors With Bilayer Gate Dielectric

Publication Year: 2012, Page(s):918 - 923
Cited by:  Papers (2)
| | PDF (468 KB) | HTML

We report an efficient method to predictably control the conductance and operation voltage of ZnO nanowire field-effect transistors (FETs) with bilayer polyimide (PI)-SiO2 gate dielectric by selectively generating oxide-trapped charges via proton beam irradiation. The bilayer gate dielectrics was made by polyimide and thermally grown SiO2 , which prevents negatively charged i... View full abstract»

• ### Impact of the Variability of the Process Parameters on CNT-Based Nanointerconnects Performances: A Comparison Between SWCNTs Bundles and MWCNT

Publication Year: 2012, Page(s):924 - 933
Cited by:  Papers (10)
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A reliable estimation of the performances of two possible realizations of a CNT-based nano-interconnect, namely one obtained by using a bundle of SWCNT and another one employing an MWCNT, taking into account the variations of some physical and geometrical characteristics is carried out. The ranges of the per unit length parameters of a transmission line modeling the interconnect and those of the p... View full abstract»

• ### Atom Bottom-Up Manipulation Controlled by Light for Microbattery Use

Publication Year: 2012, Page(s):934 - 939
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In this paper, we propose a new design of the atom bottom-up technique that uses an optical trapping tool to form the atom trapping layer within a thin-film grating. By using a PANDA ring resonator, where atoms can be trapped, pumped, and controlled by light, the trapped atoms/molecules can be selected, filtered, and embedded within the required thin-film grating layers to manufacture nanobattery.... View full abstract»

• ### Majority Voter Full Characterization for Nanomagnet Logic Circuits

Publication Year: 2012, Page(s):940 - 947
Cited by:  Papers (22)
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The recently proposed Nanomagnet-based logic (NML) represents an innovative way to assemble electronic logic circuits. The low power consumption, combined with the possibility of maintaining the information stored without power supply, allows us to design low power digital circuits far beyond the limitations of CMOS technology. This paper is focused on the key logic block of NML, the majority vote... View full abstract»

• ### The 3-D Stacking Bipolar RRAM for High Density

Publication Year: 2012, Page(s):948 - 956
Cited by:  Papers (9)
| | PDF (740 KB) | HTML

For its simple structure, high density, and good scalability, the resistive random access memory (RRAM) has emerged as one of the promising candidates for large data storage in computing systems. Moreover, building up RRAM in a 3-D stacking structure further boosts its advantage in array density. Conventionally, multiple bipolar RRAM layers are piled up vertically separated with isolation material... View full abstract»

• ### An Investigation of Thermal, Physical, and Electrical Properties and Morphological Behavior on Nanoepoxy Composite Insulation

Publication Year: 2012, Page(s):957 - 963
Cited by:  Papers (2)
| | PDF (937 KB) | HTML

Epoxy nanocomposites prepared by casting epoxy reinforced with silica flour and stiff spherical alumina nanoparticles were investigated for its electrical, mechanical, and thermal properties as well as morphological behavior and the role of interfacial interaction between nanoparticles and the matrix on these properties. It was observed that the dielectric breakdown of the cast epoxy system is aff... View full abstract»

• ### Mesoscopic Model for the Electromagnetic Properties of Arrays of Nanotubes and Nanowires: A Bulk Equivalent Approach

Publication Year: 2012, Page(s):964 - 974
Cited by:  Papers (12)
| | PDF (940 KB) | HTML

We propose a new bulk approach to the electromagnetic (EM) modeling of nanotubes (NTs) and nanowires (NWs) in arrays or bundles of arbitrary shape and size. The purpose of this model is to enable feasible and efficient EM analysis of electronics designs incorporating these novel materials by using the available software. A general and straightforward approach to derive anisotropic bulk conductivit... View full abstract»

• ### Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Publication Year: 2012, Page(s):975 - 978
Cited by:  Papers (2)
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Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimen... View full abstract»

• ### Ultrananocrystalline Diamond-Based High-Velocity SAW Device Fabricated by Electron Beam Lithography

Publication Year: 2012, Page(s):979 - 984
Cited by:  Papers (6)
| | PDF (642 KB) | HTML

Surface acoustic wave (SAW) devices have been used extensively for a variety of applications such as telecommunications, electronic devices, and sensors. The emerging need for high-bit data processing at gigahertz frequencies and the requirement of high-sensitivity sensors demand the development of high-efficiency SAW devices. With the objective of exploiting the high acoustic velocity of diamond,... View full abstract»

• ### Observation of Ga Metal Droplet Formation on Photolithographically Patterned GaAs (100) Surface by Droplet Epitaxy

Publication Year: 2012, Page(s):985 - 991
Cited by:  Papers (6)
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A sharp contrast on the density and size of Ga metal droplets is observed on various photolithographically patterned GaAs (100). As clearly evidenced by high-resolution scanning electron microscope, Ga metal droplet density and size surprisingly differ on etched and unetched surfaces under an identical growth condition. The apparent contrast on the density and size of droplets is clearly observed ... View full abstract»

• ### Device Design Engineering for Optimum Analog/RF Performance of Nanoscale DG MOSFETs

Publication Year: 2012, Page(s):992 - 998
Cited by:  Papers (17)
| | PDF (759 KB) | HTML

Analog/RF performance of double-gate MOSFETs in the sub-20-nm regime is investigated using ATLAS device simulator. It is shown that graded channel dual material double gate (GCDMDG) achieves higher drain current, peak transconductance, and higher values of cutoff frequency at lower drain currents. This novel architecture also provides better intrinsic gain for an amplifier. A new analog/RF figure ... View full abstract»

• ### Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Publication Year: 2012, Page(s):999 - 1003
Cited by:  Papers (7)
| | PDF (601 KB) | HTML

Sharpness of field emitter tips is one of the key factors to achieve excellent field emission performance. In order to sharpen the tips to atomic scale, a new method combining the bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is developed. Geometrical hindrance in the oxid... View full abstract»

• ### Modeling Dielectric Constant of Semiconductor Nanocrystals

Publication Year: 2012, Page(s):1004 - 1008
Cited by:  Papers (3)
| | PDF (408 KB) | HTML

A simple and unified model has been established for size- and composition-dependent dielectric constant ε(x,D) based on a size-dependent melting-temperature model, where x is the fraction of composition, D denotes the diameter of nanoparticles and nanowires, and the thickness of thin films. It demonstrates that depending on the dimension of nanocrystals, ε(x View full abstract»

## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.