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Microwave and Wireless Components Letters, IEEE

Issue 9 • Date Sept. 2012

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Displaying Results 1 - 25 of 25
  • Table of contents

    Publication Year: 2012 , Page(s): C1 - C4
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  • IEEE Microwave and Wireless Components Letters publication information

    Publication Year: 2012 , Page(s): C2
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  • Improved Expressions for Calculating the Impedance of Differential Feed Rectangular Microstrip Patch Antennas

    Publication Year: 2012 , Page(s): 441 - 443
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (858 KB) |  | HTML iconHTML  

    This letter presents an analysis of the impedances of differential feed microstrip rectangular patch antennas. It is shown that the impedance of a differential feed antenna exhibits cosine squared behavior over the feed distance. We present improved expressions for calculating the impedance match feed positions of a differential feed rectangular microstrip patch antenna with given dimensions, on the base of which we designed two antenna prototypes. Both simulation and measurement results match our theoretical prediction. View full abstract»

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  • A Novel Compact Suspended Stripline Resonator

    Publication Year: 2012 , Page(s): 444 - 446
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (432 KB) |  | HTML iconHTML  

    Suspended stripline (SSL) provides a transmission line medium featuring many advantages, but due to the effective permittivity being close to unity, distributed elements are usually bulky. This letter introduces a novel SSL resonator, which is both compact and low loss. For that purpose, cuboid shaped bricks of metal are incorporated into the SSL channel in the vicinity of the open-circuited side of the resonator. Through this capacitive loading, the area occupied by the resonator can be reduced by a factor of about 5, yet maintaining a high quality factor. The feasibility of this new resonator type is demonstrated with an example bandpass filter at 670 MHz center frequency showing both compact size and low insertion loss. View full abstract»

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  • Mechanical Tuning of Substrate Integrated Waveguide Resonators

    Publication Year: 2012 , Page(s): 447 - 449
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (593 KB) |  | HTML iconHTML  

    This letter presents a novel approach for providing substrate-integrated waveguide tunable resonators by means of placing an additional metalized via-hole on the waveguide cavity. The via-hole contains an open-loop slot on the top metallic wall. The dimensions, position and orientation of the open-loop slot defines the tuning range. Fabrication of some designs reveals good agreement between simulation and measurements. Additionally, a preliminary prototype which sets the open-loop slot orientation manually is also presented, achieving a continuous tuning range of 8%. View full abstract»

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  • Split Ring Resonators With Tapered Strip Width for Wider Bandwidth and Enhanced Resonance

    Publication Year: 2012 , Page(s): 450 - 452
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (478 KB) |  | HTML iconHTML  

    This article presents a modified edge-coupled split ring resonator (SRR). The proposed SRR is composed of two concentric metallic rings with a nonuniform strip width, which is tapered based on the current and voltage profile in the SRR structure. In contrast to other SRR miniaturization methods, which are based on increasing the equivalent capacitance of the SRR, the proposed SRR benefits from both increased capacitance and inductance to preserve the strength and bandwidth of the resonance. It is also shown that compared to a uniform SRR, a tapered SRR with the same electrical size provides a stronger resonance with 84% wider bandwidth, as desired in wideband filter design. The theory and simulation results are validated through measurement. View full abstract»

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  • Compact UWB Bandpass Filter With Dual Notch Bands Using Open Circuited Stubs

    Publication Year: 2012 , Page(s): 453 - 455
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (684 KB) |  | HTML iconHTML  

    In this letter, an ultra-wideband (UWB) bandpasss filter with multiple notch bands is presented. The UWB bandpass characteristic is achieved using a modified distributed highpass filter (HPF) and suppressing higher order harmonics of the HPF by realizing defected stepped impedance resonator. The dual band notches at 5.75 and 8.05 GHz are obtained by embedding two open stubs on the main microstrip line. The in band and out of band performance obtained from fullwave electromagnetic simulation, equivalent circuit model and measurement are in good agreement. View full abstract»

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  • Compact Differential Ultra-Wideband Bandpass Filter With Common-Mode Suppression

    Publication Year: 2012 , Page(s): 456 - 458
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (686 KB) |  | HTML iconHTML  

    A compact differential ultra-wideband (UWB) bandpass filter (BPF) with planar structure is presented. The circuit of the proposed filter is analyzed, showing that the differential-mode circuit, which consists of two short-ended stubs and an open-ended parallel-coupled lines, performs as a UWB BPF. While the common-mode circuit performs as a UWB bandstop filter, and the common-mode responses are suppressed across the whole UWB differential passband. A microstrip differential UWB BPF is designed, simulated and measured. Simulated and measured results show that the proposed filter has compact size (0.35λg×0.7λg), UWB differential passband (3 dB fractional bandwidth 119%) and UWB common-mode suppression (-10 db attenuation across 2.6-12 GHz). View full abstract»

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  • Low-Loss Elliptical Response Filter at 100 GHz

    Publication Year: 2012 , Page(s): 459 - 461
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (510 KB) |  | HTML iconHTML  

    The design, method of fabrication and experimental validation of a pseudo-elliptical four-poles asymmetric response filter at 100 GHz with 10% of fractional bandwidth is presented. The designed filter is part of an image radar system and must fulfill stringent specifications. The proposed topology and method of fabrication improves the out of band rejection above the pass band in comparison with other classical structures, while keeping a low insertion loss level. A two-fold geometry for implementing a transmission zero is proposed, avoiding the excitation of the first higher order mode and easing the manufacturing without any tuning element. A low-cost milling process is used for the fabrication of the device. The final design fulfills the desired specifications and presents 0.6 dB of insertion loss level at 100 GHz. The excellent agreement between simulations and measurements at this frequency band in both, return loss and insertion loss, is pointed out. View full abstract»

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  • Wideband 18–40 GHz Surface Micromachined Branchline Quadrature Hybrid

    Publication Year: 2012 , Page(s): 462 - 464
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (763 KB) |  | HTML iconHTML  

    This letter demonstrates two 18-40 GHz rectangular coaxial branchline quadrature hybrids designed using circuit and full-wave simulations. The chosen topologies are fabricated in a surface micromachining technology PolyStrata. Measured in-band performance of baseline wideband branchline hybrid shows |S11|<;-10dB, |S21| = -4.1 ± 1dB, and |S31| = -4.3 ± 0.7 dB. This hybrid is miniaturized by meandering the rectangular coaxial lines to obtain 57% reduction in surface area and in-band performance with |S11| <; -10dB, |S21|= -4.2±1.2dB, and |S31| = -4.1 ± 0.7 dB. View full abstract»

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  • Wideband Planar Crossover Using Two-Port and Four-Port Microstrip to Slotline Transitions

    Publication Year: 2012 , Page(s): 465 - 467
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (552 KB) |  | HTML iconHTML  

    The design of a wideband crossover that includes a pair of two-port and another pair of four-port microstrip-slotline transitions is presented. The utilized transitions are designed such that the resultant planar crossover has high isolation and return loss, and low insertion loss and deviation in the group delay across a wideband. The simulated and measured results of a developed 9 mm × 13 mm crossover on a substrate of 10.2 dielectric constant show less than 0.5 dB insertion loss, more than 15 dB return loss, more than 15 dB isolation and less than 0.1 ns deviation in the group delay across the band from 4.8 to 7.2 GHz (40% fractional bandwidth). View full abstract»

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  • Modeling the I-V Curves and Its Derivatives of Microwave Transistors Using Neural Networks

    Publication Year: 2012 , Page(s): 468 - 470
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (849 KB) |  | HTML iconHTML  

    Artificial neural networks are used as a tool in the development of reliable models for field effect transistors. This letter presents an improvement of the classical backpropagation algorithm allowing for the training process information contained in the first derivatives of Ids with respect to the control voltages Vgs and Vds. Excellent agreement between measured and simulated data is achieved up to the third order derivative of Ids . View full abstract»

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  • A C-Band AlGaN-GaN MMIC HPA for SAR

    Publication Year: 2012 , Page(s): 471 - 473
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (729 KB) |  | HTML iconHTML  

    A C-Band MMIC high power amplifier (HPA) has been designed exploiting a 0.25 μm HEMT GaN process on SiC substrate. The HPA is designed for future synthetic aperture radar (SAR) antenna applications. The HPA delivers 16 W output power with PAE over 38% at 6 dB gain compression within a 900 MHz bandwidth around 5.75 GHz. Up to 20 W output power and 40% PAE are obtained at higher gain compression. A comparison with another amplifier, differing only for the layout of the devices in the final stage, points out that the transistor thermal conditions represent the main limitation for this high power density technology. View full abstract»

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  • A Monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/Common-Emitter and Common-Gate Stacked Power Amplifier

    Publication Year: 2012 , Page(s): 474 - 476
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (748 KB) |  | HTML iconHTML  

    This letter describes a monolithic 3.5-to-6.5 GHz stacked power amplifier (PA) in 2 μm /0.5 μm GaAs HBT-HEMT process. The proposed PA is designed using both HBT and HEMT. Based on a common-emitter (CE) configuration of HBT with a stacked common-gate (CG) configuration of HEMT, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier due to high output stacking impedance. By using the proposed method, the stacked PA demonstrates a maximum output power of 29.4 dBm, a compact chip size of 1.5 × 1 mm2, and a maximum power added efficiency (PAE) of 38%. The output power of the proposed PA is higher than 26.5 dBm between 3.5 and 6.5 GHz. View full abstract»

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  • 35.5 GHz Parametric CMOS Upconverter

    Publication Year: 2012 , Page(s): 477 - 479
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (471 KB) |  | HTML iconHTML  

    Parametric circuit techniques are a promising means of applying CMOS to millimeter-wave (mm-wave) and sub-mm-wave front-ends. However, almost no experimental results are available for these circuits in modern silicon technologies. In this letter, a parametric 0.5-to-35.5 GHz upconverter based on an accumulation-mode MOS varactor (AMOSV) is implemented in 0.13 μm CMOS technology. It achieves a maximum conversion gain of 14 dB in the upper sideband (USB) configuration and 13 dB in the lower sideband (LSB) configuration with no dc power consumption. In the design, on-chip slow-wave coplanar waveguide interconnections are used for reducing layout area. View full abstract»

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  • A 77 GHz Low LO Power Mixer With a Split Self-Driven Switching Cell in 65 nm CMOS Technology

    Publication Year: 2012 , Page(s): 480 - 482
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (616 KB) |  | HTML iconHTML  

    A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is 7 dBm at LO power of 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm × 590 μm. The total power consumption is 3 mW from a 1.2 V supply. View full abstract»

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  • A 17.5–26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

    Publication Year: 2012 , Page(s): 483 - 485
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (572 KB) |  | HTML iconHTML  

    By the electrostatic discharge (ESD)/matching co-design methodology, a wideband low-noise amplifier (LNA) using a grounded spiral inductor in conjunction with a MOM capacitor for ESD protection and wideband matching is demonstrated in a 65 nm CMOS. The shunt inductor provides an effective bidirectional ESD protection to the ground and the series capacitor greatly enhances the breakdown level in the current discharge path. The measurement results demonstrate an over 8 kV human-body-model ESD protection level with almost no RF characteristic degradation after ESD zapping. Under a power consumption of 5.6 mW, the ESD-protected LNA presents a flat NF and power gain of 3.3-3.9 dB and 16.6-17.9 dB, respectively, in the frequency range of 18.5-24.5 GHz, and a 3 dB bandwidth of 17.5-26 GHz is achieved. View full abstract»

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  • Low-Power CMOS Super-Regenerative Receiver With a Digitally Self-Quenching Loop

    Publication Year: 2012 , Page(s): 486 - 488
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (547 KB) |  | HTML iconHTML  

    A 500 MHz super-regenerative receiver (SRR) with a digitally self-quenching loop (DSQL) is designed for low-power/high-data-rate applications. The DSQL replaces the envelope detector used in a conventional SRR and minimizes the overall power consumption by generating a self-quench signal digitally for a super-regenerative oscillator. The receiver is fabricated using a 0.13 μm CMOS process. The chip size is 0.7 mm2 and the minimum energy usage is 0.09 nJ/b with a supply voltage of 1 V at a data rate of 10 Mbps. The measured sensitivity is - 76 dBm. View full abstract»

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  • Temperature Drift Compensation Technique for Substrate Integrated Waveguide Oscillator

    Publication Year: 2012 , Page(s): 489 - 491
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (533 KB) |  | HTML iconHTML  

    In this letter, a temperature drift compensation technique for Substrate Integrated Waveguide (SIW) oscillator is proposed. The drift compensation is achieved with the use of an appropriate ratio between the coefficient of thermal expansion and the thermal coefficient of the permittivity. A cavity is first designed and measured to demonstrate the potential of the proposed technique. Measured performances are compared to those for other cavities of different substrates. An oscillator, based on an SIW cavity, is designed and fabricated at 10 GHz to validate the application of the proposed technique. Measured results show a stability of 2 ppm/°C in the temperature operating range of -40 to 80°C. View full abstract»

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  • Comments on “Wideband Coupled-Line Microstrip Filters With High-Impedance Short-Circuited Stubs”

    Publication Year: 2012 , Page(s): 492
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (73 KB)  

    In the above paper, authors analyze the realization of coupled-line filters by means of the II equivalent circuit of a short-circuited coupler. Therefore, a a wide-band bandpass filter composed of several quarter-wavelength coupled-line sections connected in cascade is designed and values for the II equivalent network are calculated. Then, an alternative to implement a high-impedance short-circuited stub (Fig. 1(a)) using a pair of coupled lines with three short circuits (Fig. 1(b)) is proposed. Nevertheless, the equation [1, (2)] used to calculate the equivalent characteristic impedance Z of the proposed alternative seems to be incorrect. View full abstract»

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  • Reply to ‘Comments on “A Modified Gysel Power Divider of Arbitrary Power Ratio and Real Terminated Impedances”’

    Publication Year: 2012 , Page(s): 492 - 493
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (97 KB)  

    Dr. Park points out that the structure in the authors' paper can be derived as a special case of the unequal dual-band Gysel power divider proposed. Actually, this conclusion is not correct if the shorted-circuit z stub is not eliminated initially. View full abstract»

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  • Reply to Comments on “Compact, High-Q, and Low-Current Dissipation CMOS Differential Active Inductor”

    Publication Year: 2012 , Page(s): 493
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (49 KB)  

    Based on the above analysis, it is clearly shown that the differential circuit in Fig. 1 is two-port, non-reciprocal, and “gyrates” a current into a voltage, and vice-versa. Thus we would prefer to refer it as a “non-ideal differential gyrator” due to its non-zero main-diagonal entries in (1). In fact, when the common-gate amplifier was used to implement the non-inverting amplifier in a gyrator, such as in [2] and [3], the main-diagonal entry in the admittance matrix of the gyrator will also significantly deviate from zero. View full abstract»

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  • IEEE Xplore Digital Library [advertisement]

    Publication Year: 2012 , Page(s): 494
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    Freely Available from IEEE
  • 2012 IEEE membership application

    Publication Year: 2012 , Page(s): 495 - 496
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    Freely Available from IEEE
  • IEEE Microwave and Wireless Components Letters Reviewers List

    Publication Year: 2012 , Page(s): C3
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    Freely Available from IEEE

Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope