# IEEE Transactions on Nuclear Science

## Issue 4  Part 1 • Aug. 2012

This issue contains several parts.Go to:  Part 2  | Part 3

## Filter Results

Displaying Results 1 - 25 of 83
• ### [Front cover]

Publication Year: 2012, Page(s): C1
| PDF (76 KB)
• ### IEEE Transactions on Nuclear Science publication information

Publication Year: 2012, Page(s): C2
| PDF (138 KB)

Publication Year: 2012, Page(s):689 - 693
| PDF (197 KB)
• ### Comments by the Chairmen

Publication Year: 2012, Page(s):694 - 695
| PDF (238 KB) | HTML
• ### Comments by the Editors

Publication Year: 2012, Page(s): 696
| PDF (22 KB) | HTML
• ### List of reviewers

Publication Year: 2012, Page(s):697 - 698
| PDF (83 KB)
• ### Comments by the Awards Chairmen

Publication Year: 2012, Page(s):699 - 700
| PDF (36 KB)
• ### Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity

Publication Year: 2012, Page(s):701 - 706
Cited by:  Papers (9)
| | PDF (712 KB) | HTML

The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in the metal-oxide-semiconductor (MOS) system of gated lateral pnp (GLPNP) bipolar transistors. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose... View full abstract»

• ### Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs

Publication Year: 2012, Page(s):707 - 713
Cited by:  Papers (5)
| | PDF (967 KB) | HTML

In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and analog parameters considering four different splits (unstrained, uniaxial, biaxial, uniaxial+biaxial). Although the influence of radiation is more pronounced for p-channel devices, in pMuGFETs devices, the radiation promotes a higher immunity t... View full abstract»

• ### Geant4 Analysis of n-Si Nuclear Reactions From Different Sources of Neutrons and Its Implication on Soft-Error Rate

Publication Year: 2012, Page(s):714 - 722
Cited by:  Papers (14)
| | PDF (1879 KB) | HTML

This work examines nuclear events resulting from the interaction of atmospheric neutrons at ground level and different atmospheric-like sources with a silicon layer. Using extensive Geant4 simulations and in-depth data analysis, this study provides a detailed comparison between several facilities and natural environment in terms of nuclear processes, secondary ion production and fragment energy di... View full abstract»

• ### Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps

Publication Year: 2012, Page(s):723 - 727
Cited by:  Papers (7)  |  Patents (1)
| | PDF (1066 KB) | HTML

The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential $({psi}_{s})$ on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge View full abstract»

• ### Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM

Publication Year: 2012, Page(s):728 - 734
Cited by:  Papers (1)
| | PDF (1080 KB) | HTML

Three-dimensional NanoTCAD simulations of a 45 nm SOI SRAM cell indicate that the contributions of charge generation and transport in the surrounding oxides have a potentially meaningful effect on the SEU response in nanotechnologies. View full abstract»

• ### Comparison of Charge Pumping and $1/f$ Noise in Irradiated Ge pMOSFETs

Publication Year: 2012, Page(s):735 - 741
Cited by:  Papers (1)
| | PDF (1194 KB) | HTML

Irradiated Ge pMOSFETs have been characterized via charge pumping $(I_{rm CP})$ and $1/f$ noise. The noise increases much more with irradiation than does $I_{rm CP}$ for devices with eight Si monolayer... View full abstract»

• ### Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs

Publication Year: 2012, Page(s):742 - 748
Cited by:  Papers (2)
| | PDF (908 KB) | HTML

The spatial dependence of transient currents induced in 4H-SiC MESFETs by various ions with the same Linear Energy Transfer (LET) but different projected ranges is evaluated. The largest signal is observed when an ion strikes the Gate-to-Drain (G-D) recess. In addition, enhanced transient currents are detected when an ion strikes the gate and the drain. The charge enhancement mechanism is clarifie... View full abstract»

• ### Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs

Publication Year: 2012, Page(s):749 - 754
Cited by:  Papers (1)
| | PDF (528 KB) | HTML

The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains a critical issue for devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was also proposed. View full abstract»

• ### Radiation-Induced Oxide Charge in Low- and High-H$_{2}$ Environments

Publication Year: 2012, Page(s):755 - 759
Cited by:  Papers (4)
| | PDF (593 KB) | HTML

Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H$_{2}$ concentrations by implementing first-pri... View full abstract»

• ### Influence of the Manufacturing Process on the Radiation Sensitivity of Fluorine-Doped Silica-Based Optical Fibers

Publication Year: 2012, Page(s):760 - 766
Cited by:  Papers (7)
| | PDF (979 KB) | HTML

In this work, we analyze the origins of the observed differences between the radiation sensitivities of fluorine-doped optical fibers made with different fabrication processes. We used several experimental techniques, coupling in situ radiation-induced absorption measurements with post mortem confocal microscopy luminescence measurements. Our data showed that the silica intrinsic defects are gener... View full abstract»

• ### Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, $^{16}$ O and p Radiation

Publication Year: 2012, Page(s):767 - 772
| | PDF (1042 KB) | HTML

MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons $^{60}{hbox{Co}}$, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. View full abstract»

• ### 3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

Publication Year: 2012, Page(s):773 - 780
Cited by:  Papers (14)
| | PDF (1080 KB) | HTML

The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. The transient response of JL-DGFET is compared to that of conventional devices operating in inversion-mode (IM-DGFET). We show that the bipolar amplification is higher in junctionless devices than in conventional inversion-mode devices mainly due to th... View full abstract»

• ### Accelerated Oxidation of Silicon Due to X-ray Irradiation

Publication Year: 2012, Page(s):781 - 785
Cited by:  Papers (7)
| | PDF (571 KB) | HTML

Enhanced rates of oxide growth have been observed on silicon upon exposure to 10-keV X-ray irradiation. Oxide thicknesses were determined using spectroscopic ellipsometry on irradiated and control samples, and confirmed via X-ray photoelectron spectroscopy. The oxidation rate varied with the radiation total dose and dose rate. The increased oxidation rate is attributed to the generation of ozone, ... View full abstract»

• ### Effect of Ion Energy on Power MOSFET's Oxide Reliability

Publication Year: 2012, Page(s):786 - 791
Cited by:  Papers (6)
| | PDF (626 KB) | HTML

Heavy ion-induced Power MOSFET's reliability degradation has been studied. Irradiations were realized at low and high energy with the same electronic stopping power at the surface of the die. For both energies, a decrease of the charge to breakdown has been observed after irradiation. However, an enhanced degradation of the oxide layer reliability is observed at low energy. The lifetime reduction ... View full abstract»

• ### Gamma Radiation Effects in Vertically Aligned Carbon Nanotubes

Publication Year: 2012, Page(s):792 - 796
Cited by:  Papers (5)
| | PDF (1750 KB) | HTML

This paper describes an experimental study of gamma radiation effects in low-density arrays of vertically aligned carbon nanotubes. These arrays are characterized by excellent anti-reflective and absorbing properties for wavelengths from UV to IR, which makes them an interesting option for stray light control in optical space applications. Gamma irradiation equivalent to an estimated surface lifet... View full abstract»

• ### Contribution to SER Prediction: A New Metric Based on RC Transient Simulations

Publication Year: 2012, Page(s):797 - 802
Cited by:  Papers (1)
| | PDF (921 KB) | HTML

This work focuses on speeding up simulation time of SEU systematic detection in a 90 nm SRAM cell. Simulations were run in order to validate a simplified approach based on the injection of a noise source current at the sensitive node of an analytical RC circuit. Moreover, a new SEU reliability metric, mandatory for reliability studies, is introduced. It is based on based on transient I–V si... View full abstract»

• ### Single-Event-Hardened CMOS Operational Amplifier Design

Publication Year: 2012, Page(s):803 - 810
Cited by:  Papers (9)
| | PDF (1473 KB) | HTML

Novel RHBD techniques are described that utilize charge sharing to mitigate single-event voltage transients in a folded cascode operational amplifier. These techniques are analyzed using a new layout aware single-event model with the Cadence Spectre circuit simulator. The techniques are applied in each of the three stages of an operational amplifier (op amp). The sensitive node active charge cance... View full abstract»

• ### Constrained Placement Methodology for Reducing SER Under Single-Event-Induced Charge Sharing Effects

Publication Year: 2012, Page(s):811 - 817
Cited by:  Papers (16)
| | PDF (648 KB) | HTML

This paper presents a methodology to reduce the impact of double faults in a circuit by constraining the placement of its standard cells. A fault-injection emulation platform is used to analyze the single-event-induced charge sharing effect in every pair of nodes. Based on the sensitivity of each pair, guidelines are set in a commercial standard cell placement by using constraints. Results show th... View full abstract»

## Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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## Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA