# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 22 of 22

Publication Year: 2012, Page(s):C1 - C4
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2012, Page(s): C2
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• ### Capacitance Computation of Coplanar Waveguide Using the Mellin Transform and Mode-Matching

Publication Year: 2012, Page(s):385 - 387
Cited by:  Papers (2)
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The electrostatic boundary-value problem of a symmetric, slotted conducting wedge is solved to compute the capacitance of a coplanar waveguide using the Mellin transform and a mode-matching method. In order to obtain a fast convergent series solution, eigenfunction expansion and residue calculus are applied. A simulation using a commercial software package was also conducted to validate the propos... View full abstract»

• ### Complementary Microstrip-Slotline Stub Configuration for Group Delay Engineering

Publication Year: 2012, Page(s):388 - 390
Cited by:  Papers (6)
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A microstrip shunt open-stub overlapping a shorted slotline is presented and used to design a novel wideband dispersive delay line. The inherent periodic transmission zeros due to the resonances of an open-stub and a shorted slotline can be removed by using the complementary configuration. Moreover, the phase response of the complementary stub is frequency dependant which is used to design a dispe... View full abstract»

• ### Miniature Ultra-Wideband Power Divider Using Bridged T-Coils

Publication Year: 2012, Page(s):391 - 393
Cited by:  Papers (20)
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In this work, a miniature ultra-wideband (UWB) power divider (PD) is proposed. By implementing the transmission lines of a two-stage Wilkinson PD using bridged T-coils, very compact size with no reduction in bandwidth can be achieved. Specifically, a proposed UWB two-way PD with a center frequency f0=5.5 GHz is implemented using the commercial GaAs pHEMT process. The circuit size withou... View full abstract»

• ### High-$Q$ 3 b/4 b RF MEMS Digitally Tunable Capacitors for 0.8–3 GHz Applications

Publication Year: 2012, Page(s):394 - 396
Cited by:  Papers (8)
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A high-Q digitally tunable capacitor is demonstrated with 3 and 4 b resolutions for 0.8-3 GHz applications. The device shows a tuning range of 1.0-3.75 pF in the 3 b configuration and 1.25-3.80 pF in the 4 b configuration ( ~ 1-4 pF simulated). In addition to digital tuning, 30-530 fF of analog tuning is achieved and allows for precision tuning. The measured Q of the digitally tunable capacitor is... View full abstract»

• ### Compact Quasi-Elliptic Wideband Bandpass Filter Using Cross-Coupled Multiple-Mode Resonator

Publication Year: 2012, Page(s):397 - 399
Cited by:  Papers (18)
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A novel compact wideband bandpass filter (BPF) is proposed based on cross-coupled multiple-mode resonator (MMR). The proposed resonator is constructed by introducing cross coupling between the high-impedance lines of a classical MMR. It is shown that new symmetrical pairs of transmission zeros (TZs) can be generated at the lower and upper stopbands, respectively, leading to a quasi-elliptic functi... View full abstract»

• ### Miniaturized Composite Right/Left-Handed Stepped-Impedance Resonator Bandpass Filter

Publication Year: 2012, Page(s):400 - 402
Cited by:  Papers (21)
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In this letter, a microstrip Stepped Impedance Resonator (SIR) bandpass filter (BPF) based on Composite Right/Left-Handed (CRLH) transmission lines is presented for the first time. Supported by theory, full-wave simulations and measurements, operational principle of the filter is explained and results are analysed. Also, comparison is made between this filter and its conventional right-handed (RH)... View full abstract»

• ### Vertical Inductive Bridge EBG (VIB-EBG) Structure With Size Reduction and Stopband Enhancement for Wideband SSN Suppression

Publication Year: 2012, Page(s):403 - 405
Cited by:  Papers (5)
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In this letter, we propose a vertical inductive bridge electromagnetic bandgap (VIB-EBG) structure for size reduction of a unit cell and the wideband suppression of simultaneous switching noise (SSN) in a multi-layer package. With the proposed vertical inductive bridge, the inductance of an EBG unit cell is effectivel increased within a compact unit cell size. Compared to the previous planar bridg... View full abstract»

• ### The Kink Phenomenon in the Transistor ${rm S} _{22}$: A Systematic and Numerical Approach

Publication Year: 2012, Page(s):406 - 408
Cited by:  Papers (5)
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This letter provides a valuable technique for evaluating the size and the shape of the kink effect in S22 for microwave transistors. Since this phenomenon can be detected as the appearance of a concave shape in Im(S22) versus Re(S22), the second derivative of such a function is exploited for defining a set of parameters to fully and systematically characterize it. ... View full abstract»

• ### A 135 GHz Differential Active Star Mixer in SiGe BiCMOS Technology

Publication Year: 2012, Page(s):409 - 411
Cited by:  Papers (4)
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A 135 GHz Gm-boosted down-conversion active mixer adopting dual baluns has been developed in this work. Fabricated with a 0.18- μm SiGe BiCMOS technology, the mixer exhibits a differential-mode conversion gain of 11.5 dB at RF frequency of 134.7 GHz for a fixed LO frequency and power of 134 GHz and 10 dBm, respectively. The mixer also shows a P-1 dB of -20 dBm and L... View full abstract»

• ### 140–220 GHz SPST and SPDT Switches in 45 nm CMOS SOI

Publication Year: 2012, Page(s):412 - 414
Cited by:  Papers (24)
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This letter presents 140-220 GHz single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches built using 45 nm semiconductor-on-insulator (SOI) CMOS technology. A tuned-shunt topology is used to minimize the insertion loss, and the transistor layout results in very low ground inductance and high isolation. The double-shunt SPST switch results in an insertion loss of 1.0 dB and an ... View full abstract»

• ### A Switch-Based ASK Modulator for 10 Gbps 135 GHz Communication by 0.13 $\mu{\rm m}$ MOSFET

Publication Year: 2012, Page(s):415 - 417
Cited by:  Papers (12)
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A switch-based ASK modulator implemented by 0.13 μm MOSFET for 135 GHz wireless communication with 10 Gbps data rate is presented. With the MOSFETs working in on/off-states, the proposed modulator can be respectively viewed as a signal-stop/signal-pass circuit at the operation frequency. Thus, the circuit can ensure constant input return-losses which minimize its input impedance variation a... View full abstract»

• ### RF Power Insensitive Varactors

Publication Year: 2012, Page(s):418 - 420
Cited by:  Papers (5)  |  Patents (2)
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In this letter, the influence of the RF voltage swing on the effective capacitance of continuously tunable capacitive devices, e.g., varactors, is investigated. Using Volterra series, equations are derived that describe the change in effective capacitance versus RF voltage, which are in agreement with simulations and have been verified by measurements. Comparing conventional and IM3 compensated va... View full abstract»

• ### A CMOS Voltage Controlled Continuous Phase Shifter With Active Loss Compensation

Publication Year: 2012, Page(s):421 - 423
Cited by:  Papers (2)
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A voltage controlled RF linear phase shifter (VPS) on CMOS process is proposed and developed to address insertion loss variation over a control range, linearity of phase control, and the size of implementation. A new compensation method for a transmission line phase shifter is introduced. By compensating loss associated with lumped elements in a transmission line, the measured CMOS VPS achieves mi... View full abstract»

• ### X-Band to W-Band Frequency Multiplier in 65 nm CMOS Process

Publication Year: 2012, Page(s):424 - 426
Cited by:  Papers (7)
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A compact single chip x9 frequency multiplier from X band to W band implemented in 65 nm CMOS is presented. A chain of five transformer coupled stages is used, including two triplers, realized with differential common source amplifiers at class-C mode. The circuit reaches saturated output power of -3.2 dBm at 91.8 GHz with a 7.2% bandwidth from 88.9 to 95.5 GHz. The suppression of unwanted harmoni... View full abstract»

• ### A 27–41 GHz Frequency Doubler With Conversion Gain of 12 dB and PAE of 16.9%

Publication Year: 2012, Page(s):427 - 429
Cited by:  Papers (8)
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A 27-41 GHz monolithic balanced frequency doubler fabricated using the 0.13 μm SiGe BiCMOS technology is presented in this letter. The balanced doubler consists of a balun, a driver amplifier (DA), a common-base (CB) doubling core and a medium power amplifier. The CB topology is used to increase the bandwidth and for the ease of matching with the balun. The proposed frequency doubler attain... View full abstract»

• ### A 60 to 77 GHz Switchable LNA in an RF-MEMS Embedded BiCMOS Technology

Publication Year: 2012, Page(s):430 - 432
Cited by:  Papers (11)  |  Patents (1)
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In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectromechanical systems embedded 0.25 μm SiGe-C BiCMOS technology. Measured results show that the presented IC achieves good performance in both frequency bands in terms of gain, noise figure and power consumption. These results demonstrate the successful monolithic int... View full abstract»

• ### A 30 GHz CMOS Frequency Synthesizer for V-Band Applications

Publication Year: 2012, Page(s):433 - 435
Cited by:  Papers (5)
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A CMOS sub-harmonic frequency synthesizer suitable for V-band applications is presented in this letter. By employing distributed switches, the output swing of the voltage- controlled oscillator can be significantly enhanced while maintaining sufficient frequency tuning range for the second-harmonic extraction. With a direct injection-locked divide-by-two circuit and current-mode-logic dividers as ... View full abstract»

• ### Efficient Parametric Characterization of the Dynamic Performance of an RFID IC

Publication Year: 2012, Page(s):436 - 438
Cited by:  Papers (5)
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In this letter, a measurement technique for a complete parametric characterization of the input impedance of an RFID IC is presented. The use of an SPDT switch to modulate the signal from the network analyzer provides the capability to measure the RFID IC activation level and its input impedance simultaneously. This data can then be used to fully predict the dynamic response and performance of an ... View full abstract»

• ### IEEE Xplore Digital Library

Publication Year: 2012, Page(s): 439
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• ### IEEE Microwave and Wireless Components Letters information for authors

Publication Year: 2012, Page(s): C3
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## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu