# IEEE Transactions on Microwave Theory and Techniques

## Issue 6  Part 2 • June 2012

This issue contains several parts.Go to:  Part 1

## Filter Results

Displaying Results 1 - 25 of 31

Publication Year: 2012, Page(s):C1 - C4
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• ### IEEE Transactions on Microwave Theory and Techniques publication information

Publication Year: 2012, Page(s): C2
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• ### Guest Editorial

Publication Year: 2012, Page(s):1753 - 1754
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• ### LDMOS Technology for RF Power Amplifiers

Publication Year: 2012, Page(s):1755 - 1763
Cited by:  Papers (32)  |  Patents (1)
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We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and microwave. We present state-of-the-art RF performance of the LDMOS transistor measured with a load-pul... View full abstract»

• ### A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Publication Year: 2012, Page(s):1764 - 1783
Cited by:  Papers (205)  |  Patents (5)
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Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and fielded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupled... View full abstract»

• ### Design of CMOS Power Amplifiers

Publication Year: 2012, Page(s):1784 - 1796
Cited by:  Papers (39)  |  Patents (1)
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This paper describes the key technology and circuit design issues facing the design of an efficient linear RF CMOS power amplifier for modern communication standards incorporating high peak-to-average ratio signals. We show that most important limitations arise from the limited breakdown voltage of nanoscale CMOS devices and the large back-off requirements to achieve the required linearity, both o... View full abstract»

• ### Controlling Active Load–Pull in a Dual-Input Inverse Load Modulated Doherty Architecture

Publication Year: 2012, Page(s):1797 - 1804
Cited by:  Papers (7)  |  Patents (1)
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Mathematical analysis of Doherty amplifiers have assumed many simplifications. Most notably, the peaking amplifier does not contribute power into the load and the peaking stage has an observed impedance of infinity. This paper will show that these simplifications impair the performance of a single-input Doherty amplifier and that phase tuning for compensation is needed to improve the overall syste... View full abstract»

• ### 12-W $X$ -Band MMIC HPA and Driver Amplifiers in InGaP-GaAs HBT Technology for Space SAR T/R Modules

Publication Year: 2012, Page(s):1805 - 1816
Cited by:  Papers (10)
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The chip-set for the transmitting power lineup of satellite SAR antenna T/R modules has been designed and implemented exploiting a 2- μm GaInP-GaAs heterojunction bipolar transistor (HBT) technology suitable for space applications. The HBT technology features an integrated emitter ballast resistor that enables high-power density operation without suffering thermal runaway phenomena. Two mon... View full abstract»

• ### Multiharmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

Publication Year: 2012, Page(s):1817 - 1828
Cited by:  Papers (3)
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This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efficient power amplifiers with packaged transistors in computer-aided design (CAD) software. The proposed model topology is based on the principle of the harmonic superposition introduced by the Agilent X-parameters, which is combined with th... View full abstract»

• ### Design of Adaptive Highly Efficient GaN Power Amplifier for Octave-Bandwidth Application and Dynamic Load Modulation

Publication Year: 2012, Page(s):1829 - 1839
Cited by:  Papers (24)
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This paper presents a novel adaptive power amplifier (PA) architecture for performing dynamic-load-modulation. For the first time, a dynamically-load-modulated PA design that achieves octave bandwidth, high power and high efficiency simultaneously is experimentally demonstrated. This PA design is based on a commercial GaN HEMT. The output matching scheme incorporates a broadband static matching fo... View full abstract»

• ### Design of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier

Publication Year: 2012, Page(s):1840 - 1849
Cited by:  Papers (63)  |  Patents (1)
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In this paper, the design, implementation, and experimental results of a high-efficiency dual-band GaN-HEMT Doherty power amplifier (DPA) are presented. An extensive discussion about the design of the passive structures is presented showing different possible topologies of the dual-band DPA. One of the proposed topologies is used to design a dual-band DPA in hybrid technology for the frequency ban... View full abstract»

• ### Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers

Publication Year: 2012, Page(s):1850 - 1861
Cited by:  Papers (11)  |  Patents (2)
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A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (VDD = 15 V) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GH... View full abstract»

• ### High-Efficiency Cellular Power Amplifiers Based on a Modified LDMOS Process on Bulk Silicon and Silicon-On-Insulator Substrates With Integrated Power Management Circuitry

Publication Year: 2012, Page(s):1862 - 1869
Cited by:  Papers (15)  |  Patents (8)
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An RF high-voltage CMOS technology is presented for cost-effective monolithic integration of cellular RF transmit functions. The technology integrates a modified LDMOS RF power transistor capable of nearly comparable linear and saturated RF power characteristics to GaAs solutions at cellular frequency bands. Measured results for multistage cellular power amplifier (PA) designs processed on bulk-Si... View full abstract»

• ### $Q$ -Band and $W$ -Band Power Amplifiers in 45-nm CMOS SOI

Publication Year: 2012, Page(s):1870 - 1877
Cited by:  Papers (20)
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The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push-pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. ... View full abstract»

• ### A Fully Integrated Watt-Level Linear 900-MHz CMOS RF Power Amplifier for LTE-Applications

Publication Year: 2012, Page(s):1878 - 1885
Cited by:  Papers (58)
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There is a growing demand for the implementation of the RF power amplifier (PA) in CMOS technologies, due to its cost and integration benefits. Most of the already reported CMOS PAs do not have sufficient output power nor linearity to cope with the long term evolution (LTE) requirements. In this paper, the linearity requirements for power amplifiers targeting LTE-applications are investigated. Bas... View full abstract»

• ### Analytical Design Methodology of Outphasing Amplification Systems Using a New Simplified Chireix Combiner Model

Publication Year: 2012, Page(s):1886 - 1895
Cited by:  Papers (11)
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An analytical design methodology of outphasing amplification systems is proposed using new simplified analytical expressions for the instantaneous efficiency and the input/output voltages of Chireix outphasing combiners. These expressions are derived first for ideal voltage sources with nonzero internal impedance and later for ideal Class-B amplifiers where dc current variation is incorporated. Th... View full abstract»

• ### A Zero-Voltage-Switching Contour-Based Outphasing Power Amplifier

Publication Year: 2012, Page(s):1896 - 1906
Cited by:  Papers (8)
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A parallel class-E modified Chireix outphasing power amplifier (PA) that can maintain high efficiency across a wide output power range is presented. The architecture presented essentially implements a zero voltage switching (ZVS) contour-based PA using a modified Chireix outphasing structure. It utilizes the inherent load modulation present in the outphasing scheme and combines it with duty cycle ... View full abstract»

• ### Modeling and Digital Predistortion of Class-D Outphasing RF Power Amplifiers

Publication Year: 2012, Page(s):1907 - 1915
Cited by:  Papers (15)
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This paper presents a direct model structure for describing class-D outphasing power amplifiers (PAs) and a method for digitally predistorting these amplifiers. The direct model structure is based on modeling differences in gain and delay, nonlinear interactions between the two paths, and differences in the amplifier behavior. The digital predistortion method is designed to operate only on the inp... View full abstract»

• ### Investigation of Wideband Load Transformation Networks for Class-E Switching-Mode Power Amplifiers

Publication Year: 2012, Page(s):1916 - 1927
Cited by:  Papers (5)
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In this paper, single-ended and differential class-E load transformation networks (LTNs) for wideband operation are investigated. For this purpose, a differential third parallel-tuned tank LTN and a parallel-circuit load LTN without suppressing tanks are proposed to fulfill the class-E wideband condition. The differential parallel-circuit load (DPCL), which considers the finite RF chokes, has high... View full abstract»

• ### The Continuous Inverse Class-F Mode With Resistive Second-Harmonic Impedance

Publication Year: 2012, Page(s):1928 - 1936
Cited by:  Papers (30)
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In this paper, an extended version of the continuous class-F-1 mode power amplifier (PA) design approach is presented. A new formulation describing the current waveform in terms of just two additional parameters, while maintaining a constant half-wave rectified sinusoidal voltage waveform, allows multiple solutions of fundamental and second-harmonic impedances that provide optimu... View full abstract»

• ### Behaviors of Class-F and Class- ${hbox{F}}^{-1}$ Amplifiers

Publication Year: 2012, Page(s):1937 - 1951
Cited by:  Papers (20)
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Operational behaviors of the class-F and class-F-1 amplifiers are investigated. For the half-sinusoidal voltage waveform of the class-F-1 amplifier, the amplifier should be operated in the highly saturated region, in which the phase relation between the fundamental and second harmonic currents are out-of-phase. The class-F amplifier can operate at the less saturated region to... View full abstract»

• ### A Simplified Broadband Design Methodology for Linearized High-Efficiency Continuous Class-F Power Amplifiers

Publication Year: 2012, Page(s):1952 - 1963
Cited by:  Papers (59)
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This paper describes the design approach employed for achieving approximated continuous Class-F power amplifier (PA) modes over wide bandwidths. The importance of the nonlinear device capacitance for wave-shaping the continuous Class-F voltage and current waveforms is highlighted, thus reducing the device sensitivity to second and third harmonic impedance terminations. By identifying the high-effi... View full abstract»

• ### New Trends for the Nonlinear Measurement and Modeling of High-Power RF Transistors and Amplifiers With Memory Effects

Publication Year: 2012, Page(s):1964 - 1978
Cited by:  Papers (42)
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Power amplifier (PA) behavior is inextricably linked to the characteristics of the transistors underlying the PA design. All transistors exhibit some degree of memory effects, which must therefore be taken into account in the modeling and design of these PAs. In this paper, we will present new trends for the characterization, device modeling, and behavioral modeling of power transistors and amplif... View full abstract»

• ### Complex-Chebyshev Functional Link Neural Network Behavioral Model for Broadband Wireless Power Amplifiers

Publication Year: 2012, Page(s):1979 - 1989
Cited by:  Papers (11)
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The Neural Network (NN) based models are commonly used in power amplifier modeling and predistorter design, and seen as a potential alternative to model and compensate broadband power amplifiers (PAs) having medium- to-strong memory effects along with high-order nonlinearity. In this paper, we propose a novel computationally efficient behavior model based on complex-Chebyshev functional link neura... View full abstract»

• ### Subsampling Feedback Loop Applicable to Concurrent Dual-Band Linearization Architecture

Publication Year: 2012, Page(s):1990 - 1999
Cited by:  Papers (26)  |  Patents (2)
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This paper demonstrates an energy-efficient and low-complexity subsampling receiver adopted in the feedback loop of the dual-band power amplifier (PA) linearization architecture. The challenges and issues on finding the valid subsampling frequencies in nonlinear system are discussed, and a systematic approach for finding valid subsampling frequencies is presented. The subsampling-based receiver is... View full abstract»

## Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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## Meet Our Editors

Editor-in-Chief
Luca Perregrini
luca.perregrini@unipv.it

Editor-in-Chief
Jose Carlos Pedro
edit.tmtt@ua.pt