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# IEEE Transactions on Nanotechnology

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Displaying Results 1 - 25 of 37
• ### [Front cover]

Publication Year: 2012, Page(s): C1
| PDF (182 KB)
• ### IEEE Transactions on Nanotechnology publication information

Publication Year: 2012, Page(s): C2
| PDF (40 KB)

Publication Year: 2012, Page(s):429 - 430
| PDF (190 KB)
• ### A Low-Power 40-Gb/s 1:2 Demultiplexer IC Based on a Resonant Tunneling Diode

Publication Year: 2012, Page(s):431 - 434
Cited by:  Papers (6)
| | PDF (526 KB) | HTML

A low-power 1:2 demultiplexer (DEMUX) IC based on a resonant tunneling diode (RTD) is proposed. In order to achieve low-power consumption, the unique negative differential resistance (NDR) characteristics arising from the quantum effect of the RTD are exploited. The proposed DEMUX IC consists of an return to zero (RZ)-mode 1:2 demultiplexing block and an RZ-to-nonreturn to zero converting block, w... View full abstract»

• ### High Current Gain Microwave Performance of Organic Metal-Base Transistor

Publication Year: 2012, Page(s):435 - 436
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We report the realization of 140 nm emitter TPD/CuPc (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine/copper phthalocyanine) with cutoff frequency fT = 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the fir... View full abstract»

• ### Electrical and Magnetic Properties of Higher Manganese Silicide Nanostructures

Publication Year: 2012, Page(s):437 - 440
Cited by:  Papers (3)
| | PDF (406 KB) | HTML

Higher manganese silicide, Mn15Si26, nanostructures were grown using CVD using a coordination compound precursor. These nanostructures exhibit p-type semiconducting behavior. They also exhibit a nonzero magnetic moment even at room temperature and the magnetic transition temperature appears to be near 330 K. View full abstract»

• ### PolyMethyl Methacrylate Thin-Film-Based Field Emission Microscope

Publication Year: 2012, Page(s):441 - 443
Cited by:  Papers (4)
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A field emission microscope (FEM) is a useful tool for investigating molecular surface structures. Conventional FEMs suffer from poor image contrast level and low sensitivities when low-energy electron beams are applied. In this article, a new anode material is employed to improve the FEM imaging performance. We demonstrate that the device has the capability of clearly capturing images of facet bo... View full abstract»

• ### Fabrication of optical device arrays using patterned growth of ZnO nanostructures

Publication Year: 2012, Page(s):444 - 447
Cited by:  Papers (3)
| | PDF (443 KB) | HTML

An on-site catalyst-free and seedless synthesis method is presented for patterned growth of ZnO nanostructures and easy integration into arrayed microdevices. The optoelectronic ZnO devices, exhibiting Schottky diode behavior, are highly sensitive to UV illumination. We demonstrate that the patterned synthesis method combined with conventional lithography provides a facile way of fabricating array... View full abstract»

• ### Single Mesowire Transistor From Perylene Tetracarboxylic Diimide

Publication Year: 2012, Page(s):448 - 450
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We have recently fabricated new nano/mesowires of perylene tetracarboxylic diimide (PTCDI) without side chains by self-assembling them from a gas phase. In this letter, we discuss a single PTCDI mesowire transistor that was successfully fabricated, characterized, and modeled. This organic n-channel field effect transistor shows good output and transfer characteristics. Our transistor model include... View full abstract»

• ### A Scalable Memory-Based Reconfigurable Computing Framework for Nanoscale Crossbar

Publication Year: 2012, Page(s):451 - 462
Cited by:  Papers (16)
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Nanoscale molecular electronic devices amenable to bottom-up self-assembly into a crossbar structure have emerged as a promising candidate for future electronic systems. To address some of the design challenges in molecular crossbar, we propose “memory-based architecture for reconfigurable computing” (MBARC), where memory, instead of switch-based logic functions, is used as the compu... View full abstract»

• ### Theoretical Investigation of Traveling-Wave Amplification in Metallic Carbon Nanotubes Biased by a DC Field

Publication Year: 2012, Page(s):463 - 471
Cited by:  Papers (5)
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Traveling-wave amplification along a carbon nanotube (CNT) under dc-ac fields is theoretically investigated. The ac conductivity of a metallic CNT is found with respect to the applied dc bias. For this purpose, the Boltzmann transport equation (BTE) is solved within the relaxation time approximation (RTA) by separating the ac and dc distributions. The problem is solved both exactly and approximate... View full abstract»

• ### Work Function Engineering With Linearly Graded Binary Metal Alloy Gate Electrode for Short-Channel SOI MOSFET

Publication Year: 2012, Page(s):472 - 478
Cited by:  Papers (17)
| | PDF (426 KB) | HTML

Over the last few decades, silicon-on-insulator (SOI) technology has been identified as one possible solution for enhancing the performance of CMOS because of its numerous advantages over conventional bulk CMOS technology. One of the primary drawbacks of short-channel SOI MOSFET is the degradation of device threshold voltage with decreasing channel length. Drain-induced barrier-lowering (DIBL) eff... View full abstract»

• ### MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

Publication Year: 2012, Page(s):479 - 482
Cited by:  Papers (11)
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We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold volt... View full abstract»

• ### MOS Devices With High-κ (ZrO$_2$) $_x$(La $_2$O$_3$) $_{1-x}$ Alloy as Gate Dielectric Formed by Depositing ZrO $_2$/La$_2$O $_3$/ZrO$_2$ Laminate and Annealing

Publication Year: 2012, Page(s):483 - 491
Cited by:  Papers (3)
| | PDF (781 KB) | HTML

An amorphous (ZrO2)x(La2O3)1-x alloy formed by depositing a ZrO2/La2O3/ZrO2 laminate and a subsequent annealing was employed as the gate dielectric for metal-oxide-semiconductor (MOS) devices. The (ZrO2)x(La2O3)1-x alloy is found to have a high permi... View full abstract»

• ### Quantum Transport and Current Distribution at Radio Frequency in Multiwall Carbon Nanotubes

Publication Year: 2012, Page(s):492 - 500
Cited by:  Papers (4)
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Multiwall carbon nanotubes represent a low-dimensional material that could serve as building blocks for future carbon-based nanoelectronics. The understanding of the electromagnetic performances at radio frequency of these materials for use in nanointerconnects is strictly related to the analysis of their transport properties as function of the working conditions. In this paper, we present an expl... View full abstract»

• ### Performance Analysis of Si Nanowire Biosensor by Numerical Modeling for Charge Sensing

Publication Year: 2012, Page(s):501 - 512
Cited by:  Papers (21)
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A numerical study on the operation of Si nanowire (NW) biosensors in charge-based sensing is presented. The simulation is built on physical models that, upon numerical convergence, coherently account for Fermi-Dirac, Poisson-Boltzman, site-binding and Gouy-Chapman-Stern theories in self-consistent manner. The method enables us to disentangle the impact of key design and experimental setup factors ... View full abstract»

• ### Properties of Metal–Graphene Contacts

Publication Year: 2012, Page(s):513 - 519
Cited by:  Papers (26)
| | PDF (627 KB) | HTML

We present a study on the metal-graphene contact properties. Utilizing a dual-gate field-effect transistor device, an energetic separation between the Fermi level and the Dirac point in the contact areas can be adjusted deliberately by applying an appropriate front-gate voltage that acts only on the channel. This front-gate voltage is compensated by an opposite large-area back-gate voltage, thereb... View full abstract»

• ### A Flexible ZnO Nanowire-Based Humidity Sensor

Publication Year: 2012, Page(s):520 - 525
Cited by:  Papers (13)
| | PDF (779 KB) | HTML

In this paper, the authors report the direct growth of ZnO nanowires (NWs) on a flexible substrate by the hydrothermal process and the fabrication of ZnO NW-based humidity sensor. It was found that average length and diameter of the ZnO NWs were 0.6 μm and 50 nm, respectively. It was also found that resistance of the ZnO NWs decreased by 45% as we increased the relative humidity from 52% to... View full abstract»

• ### Influence of Channel and Underlap Engineering on the High-Frequency and Switching Performance of CNTFETs

Publication Year: 2012, Page(s):526 - 533
Cited by:  Papers (15)
| | PDF (814 KB) | HTML

We have comprehensively studied the influence of the channel and underlap engineering on the switching and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs). Various source/drain and channel-engineered CNTFETs have been investigated and optimized architectures have been concluded from simulations. Performance parameters such as switching time τ and cutoff freq... View full abstract»

• ### Tuning Electronic Structure of Graphene: A First-Principles Study

Publication Year: 2012, Page(s):534 - 541
Cited by:  Papers (15)
| | PDF (712 KB) | HTML

Based on first-principles study, tuning of electronic structure of graphene is reported. The emergence of band gap in this semimetal can be accomplished through different mechanisms. In this study, we have reported on the band gap modulations in graphene through chemical functionalization with oxygen, under the application of external stress, and through the creation of vacancies. Our study sugges... View full abstract»

• ### Orientation Modulated Epitaxy of Cu Nanorods on Si(1 0 0) Substrate

Publication Year: 2012, Page(s):542 - 545
Cited by:  Papers (5)
| | PDF (359 KB) | HTML

Epitaxial growth of Cu nanorod films on hydrogen-terminated Si(100) substrates by oblique angle deposition (OAD) was investigated. It is found out that the crystallographic orientation of Cu nanorod films exhibits a 45° in-plane rotation with respect to the substrate. When the incident angle of deposition was increased from normal to 80°, the distribution of Cu(111) poles is observed... View full abstract»

• ### PLGA Micro- and Nanoparticles Loaded Into Gelatin Scaffold for Controlled Drug Release

Publication Year: 2012, Page(s):546 - 553
Cited by:  Papers (8)
| | PDF (637 KB) | HTML

Curcumin and bovine serum albumin (BSA) were used as model drugs and loaded into microand nanoparticles of biodegradable poly(lactic-co-glycolic acid) (PLGA). The PLGA was incorporated into hydrophilic and biocompatible gelatin scaffolds to design a controlled drug release system. The gelatin scaffolds were cross-linked using glutaraldehyde. The controlled delivery of drugs from biologically activ... View full abstract»

• ### Transmission-Line Model for Multiwall Carbon Nanotubes With Intershell Tunneling

Publication Year: 2012, Page(s):554 - 564
Cited by:  Papers (17)
| | PDF (619 KB) | HTML

The electromagnetic behavior of multiwall carbon nanotubes (MWCNTs), in the frequency range where only intraband transitions are allowed, depends on the combinations of different aspects: the number of effective conducting channels of each shell, the electron tunneling between adjacent shells, and the electromagnetic interaction between shells and the environment. This paper proposes a general tra... View full abstract»

• ### Electrical Properties of Silicon Nanowire Fabricated by Patterning and Oxidation Process

Publication Year: 2012, Page(s):565 - 569
Cited by:  Papers (2)
| | PDF (393 KB) | HTML

We are reporting electrical properties of Si nanowire field-effect transistors with a Schottky barrier formed at the electrodes. The channel widths are varied using a top-down process of electron-beam patterning followed by surface oxidation from a few micrometers to the sub-10-nm level. The field-effect mobility increases gradually with decreasing channel width to 20 nm. On the other hand, the mo... View full abstract»

• ### Joint Energy Harvesting and Communication Analysis for Perpetual Wireless Nanosensor Networks in the Terahertz Band

Publication Year: 2012, Page(s):570 - 580
Cited by:  Papers (65)
| | PDF (710 KB) | HTML

Wireless nanosensor networks (WNSNs) consist of nanosized communicating devices, which can detect and measure new types of events at the nanoscale. WNSNs are the enabling technology for unique applications such as intrabody drug delivery systems or surveillance networks for chemical attack prevention. One of the major bottlenecks in WNSNs is posed by the very limited energy that can be stored in a... View full abstract»

## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.