# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 23 of 23

Publication Year: 2012, Page(s):C1 - C4
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2012, Page(s): C2
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• ### Efficient Harmonic Balance Analysis of Waveguide Devices With Nonlinear Dielectrics

Publication Year: 2012, Page(s):221 - 223
Cited by:  Papers (2)
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The computation of high order harmonic components of the time-harmonic field originated in waveguide structures containing nonlinear dielectrics is addressed exploiting harmonic balance and finite element methods. The solution of the nonlinear system is handled either via Picard or relaxed iterations. Being the nonlinear loop particularly time demanding, a domain decomposition method is proposed t... View full abstract»

• ### Compact Quadruplet Bandpass Filter Based on Alternative J/K Inverters and $lambda/4$ Resonators

Publication Year: 2012, Page(s):224 - 226
Cited by:  Papers (13)
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This letter presents the proposal and synthesis design of a novel compact microstrip quadruplet bandpass filter (BPF) based on alternative J/K inverters and λ/4 resonators. The proposed quadruplet bandpass prototype is firstly derived from the conventional one with lumped LC resonators and the J-inverters. The mainline coupling is implemented by cascading four λ/4 resonators via the ... View full abstract»

• ### Scheme for the Implementation of Cross-Couplings for Highly Tuneable Filters

Publication Year: 2012, Page(s):227 - 229
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An architecture of a quadruplet for the realization of inductive waveguide filters, in which the by-pass coupling of the two central cavities is inductive, instead of the more classical capacitive solution, is proposed. This arrangement is quite handy because it makes easier the realization of very weak couplings, as those required in such schemes, without the need of expensive solutions. At the s... View full abstract»

• ### D-Band Micromachined Silicon Rectangular Waveguide Filter

Publication Year: 2012, Page(s):230 - 232
Cited by:  Papers (16)
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The 140 GHz silicon micromachined bandpass rectangular waveguide filters are firstly fabricated by the deep reactive ion etching (DRIE) processes for submillimeter wave applications. The filter circuit structure is once-formed using the ICP reactive ion etcher to etch through the full thickness of the silicon wafer, and then bonded together with the two metallized glass covers to form the waveguid... View full abstract»

• ### Dual-Mode Dual-Band Bandpass Filter Using a Single Slotted Circular Patch Resonator

Publication Year: 2012, Page(s):233 - 235
Cited by:  Papers (25)
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A single slotted circular patch resonator is proposed in this letter to design a novel dual-mode dual-band bandpass filter. Four identical arc-oriented slots are first symmetrically etched into the circular patch resonator to move the TM01-like mode to a lower frequency. Together with the TM21-like mode, these two modes make up the second passband of the proposed filter. A pa... View full abstract»

• ### HTS Bandstop Filter for Radio Astronomy

Publication Year: 2012, Page(s):236 - 238
Cited by:  Papers (2)
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A novel miniaturized six-pole high temperature superconducting microstrip bandstop filter operating at S band is presented in this letter. A pseudo elliptical behavior in the frequency characteristic is introduced by designing the resonators to resonate at asynchronous frequencies and by varying the inter resonator phase difference. These filters have been installed in a cryogenic radio astronomy ... View full abstract»

• ### Temperature Stable Bulk Acoustic Wave Filters Enabling Integration of a Mobile Television Function in UMTS System

Publication Year: 2012, Page(s):239 - 241
Cited by:  Papers (2)
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Multi-mode mobile equipment requires efficient radio-frequency (RF) filtering solutions to solve interference problems in an UMTS system integrated with a mobile television function. A RF filtering solution comprising a band-pass filter and a band-stop filter based on temperature-stable bulk acoustic wave resonator (BAW) technology is proposed in this letter. Both filters measurably demonstrate lo... View full abstract»

• ### New S-Band Bandpass Filter (BPF) With Wideband Passband for Wireless Communication Systems

Publication Year: 2012, Page(s):242 - 244
Cited by:  Papers (23)
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In this letter, a new wideband bandpass filter (BPF) using microstrip parallel-coupled line structure for s-band applications is proposed. The filter is constructed of two sections of three coupled lines separated by a nonuniform line resonator. In order to introduce one transmission zero at each edge of the desired passband, one of the outer coupled lines of each section is shorted to the ground.... View full abstract»

• ### Compact Filter Configurations Using Concentric Microstrip Open-Loop Resonators

Publication Year: 2012, Page(s):245 - 247
Cited by:  Papers (10)
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This paper presents two highly compact filter configurations using concentric open-loop resonators. A description of each filter configuration is presented, where a linkage between structural features and coupling coefficients is outlined. A third order trisection and a fourth order source-load coupled filter were designed and fabricated at 1.0 GHz, and each filter was shown to occupy an area of j... View full abstract»

• ### Dual-Band Composite Right/Left-Handed Metamaterial Concept

Publication Year: 2012, Page(s):248 - 250
Cited by:  Papers (8)
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In this letter a concept of a simple dual-band (DB) composite right/left-handed (CRLH) metamaterial is presented and discussed. This DB-CRLH concept is based on the combination of a conventional CRLH unit-cell with two conventional right-handed transmission-line sections. The equations required for analysis of such structure is derived and presented. The effect of the equivalent circuit model para... View full abstract»

• ### A Vertical Transition Between Rectangular Waveguide and Coupled Microstrip Lines

Publication Year: 2012, Page(s):251 - 253
Cited by:  Papers (9)
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In this letter, a novel transition between a rectangular waveguide and coupled microstrip lines is presented. A differential microstrip patch antenna (DMPA) inside the waveguide acts as a radiation element. The antenna is composed of the main patch, the short-end parasitic patch, and the matching network. By implementing the short-end parasitic patch, the bandwidth of differential mode signals is ... View full abstract»

• ### A Compact Wideband Microstrip Crossover

Publication Year: 2012, Page(s):254 - 256
Cited by:  Papers (23)
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In this letter, a planar microstrip crossover junction is presented. The conductor-backed coplanar waveguide (CB-CPW) structure with vias is employed as the core part of the crossover design. The dimensions of the CB-CPW crossover itself are 11.3 × 11.3 mm2. Two kinds of the transitions between the microstrip line (MSL) and the CB-CPW structure are merged into a double side print... View full abstract»

• ### A Novel Formulation for High Efficiency Modes in Push-Pull Power Amplifiers Using Transmission Line Baluns

Publication Year: 2012, Page(s):257 - 259
Cited by:  Papers (8)
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Push-pull power amplifiers (PAs) operating at HF through to GHz frequencies typically employ a transmission line balun structure. This letter demonstrates that their performance characteristics in high efficiency PA applications are critically different from conventional transformers. For the first time, the effect of the even-mode open-circuit termination on the output waveforms is measured. A no... View full abstract»

• ### A 209–233 GHz Frequency Source in 90 nm CMOS Technology

Publication Year: 2012, Page(s):260 - 262
Cited by:  Papers (20)
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This letter presents a J-band signal source based on a third harmonic generation of a differential Colpitts voltage controlled oscillator (VCO). The source covers a frequency range from 209.3 to 233.3 GHz, which corresponds to a 10.8% total tuning range. This is the widest tuning range in a J-band source signal reported to date. The VCO was fabricated using a 90 nm Mixed-Mode/RF CMOS process; it p... View full abstract»

• ### A D-Band Passive Imager in 65 nm CMOS

Publication Year: 2012, Page(s):263 - 265
Cited by:  Papers (9)
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A differential D-band (140 GHz) passive imager has been demonstrated in a 65 nm CMOS technology. It achieves a minimum noise equivalent power of 26 fW/√Hz with peak responsivity of 1.2 MV/W. The core circuit consumes chip area of 950×240 μm2 with dc power consumption of 152 mW. This work further pushes imagers in CMOS technology working towards higher millimeter wav... View full abstract»

• ### Millimeter-Wave Chip-to-Chip Transmission Using an Insulated Image Guide Excited by an On-Chip Dipole Antenna at 90 GHz

Publication Year: 2012, Page(s):266 - 268
Cited by:  Papers (8)
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A millimeter-wave chip-to-chip transmission link operating at 90 GHz is presented. It uses an insulated image guide and on-chip dipole antennas positioned in the entrance of the waveguide for excitation and reception. The on-chip dipole antenna couples to the higher-order Ex11 mode of a synthesized insulated image waveguide. This field coupling avoids the need for conductive ... View full abstract»

• ### A 0.2–2.6 GHz Wideband Noise-Reduction Gm-Boosted LNA

Publication Year: 2012, Page(s):269 - 271
Cited by:  Papers (6)
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This letter presents a wideband low-noise amplifier (LNA) which utilizes gm-boosted and noise-reduction techniques. The proposed DC-coupled 2-stage LNA employs an error amplifier to cancel the DC-offset voltage between the differential DC-coupled paths. The LNA is implemented in 90-nm digital CMOS technology. Within 0.2-2.6 GHz wideband applications, the LNA achieves 24 dB voltage gain,... View full abstract»

• ### A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology

Publication Year: 2012, Page(s):272 - 274
Cited by:  Papers (5)
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A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement result... View full abstract»

• ### IEEE Xplore Digital Library

Publication Year: 2012, Page(s): 275
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• ### Advertisement - Quality without compromise

Publication Year: 2012, Page(s): 276
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• ### IEEE Microwave and Wireless Components Letters Reviewers List

Publication Year: 2012, Page(s): C3
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## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu