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Microwave and Wireless Components Letters, IEEE

Issue 5 • Date May 2012

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Displaying Results 1 - 23 of 23
  • Table of contents

    Page(s): C1 - C4
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  • IEEE Microwave and Wireless Components Letters publication information

    Page(s): C2
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  • Efficient Harmonic Balance Analysis of Waveguide Devices With Nonlinear Dielectrics

    Page(s): 221 - 223
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (272 KB) |  | HTML iconHTML  

    The computation of high order harmonic components of the time-harmonic field originated in waveguide structures containing nonlinear dielectrics is addressed exploiting harmonic balance and finite element methods. The solution of the nonlinear system is handled either via Picard or relaxed iterations. Being the nonlinear loop particularly time demanding, a domain decomposition method is proposed to speed-up the system solution by restricting the iteration to a small subdomain. A numerical example over a 2-D H-plane device is presented. View full abstract»

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  • Compact Quadruplet Bandpass Filter Based on Alternative J/K Inverters and \lambda /4 Resonators

    Page(s): 224 - 226
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (260 KB) |  | HTML iconHTML  

    This letter presents the proposal and synthesis design of a novel compact microstrip quadruplet bandpass filter (BPF) based on alternative J/K inverters and λ/4 resonators. The proposed quadruplet bandpass prototype is firstly derived from the conventional one with lumped LC resonators and the J-inverters. The mainline coupling is implemented by cascading four λ/4 resonators via the alternative J and K inverters, resulting in the achievement of the generalized Chebyshev in-band response. Meanwhile, the first and fourth resonators are cross-coupled via magnetic coupling so as to simultaneously produce transmission zeros below and above the desired passband. Finally, a microstrip quadruplet BPF at 2.5 GHz with a fractional bandwidth of 12.0% is designed, and the measured results of the fabricated filter show consistent match with its theoretical ones. View full abstract»

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  • Scheme for the Implementation of Cross-Couplings for Highly Tuneable Filters

    Page(s): 227 - 229
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (354 KB) |  | HTML iconHTML  

    An architecture of a quadruplet for the realization of inductive waveguide filters, in which the by-pass coupling of the two central cavities is inductive, instead of the more classical capacitive solution, is proposed. This arrangement is quite handy because it makes easier the realization of very weak couplings, as those required in such schemes, without the need of expensive solutions. At the same time, one capacitive coupling is used to couple two electrically adjacent cavities of the quadruplet, possibly the more external ones, so that the coupling is large enough to be effectively implemented. View full abstract»

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  • D-Band Micromachined Silicon Rectangular Waveguide Filter

    Page(s): 230 - 232
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (312 KB) |  | HTML iconHTML  

    The 140 GHz silicon micromachined bandpass rectangular waveguide filters are firstly fabricated by the deep reactive ion etching (DRIE) processes for submillimeter wave applications. The filter circuit structure is once-formed using the ICP reactive ion etcher to etch through the full thickness of the silicon wafer, and then bonded together with the two metallized glass covers to form the waveguide cavity. The measured lowest insertion losses are lower than 0.5 dB. The unloaded quality factor can reach 160. It demonstrates a successful and practical way to fabricate these types of waveguide filters. View full abstract»

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  • Dual-Mode Dual-Band Bandpass Filter Using a Single Slotted Circular Patch Resonator

    Page(s): 233 - 235
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (530 KB) |  | HTML iconHTML  

    A single slotted circular patch resonator is proposed in this letter to design a novel dual-mode dual-band bandpass filter. Four identical arc-oriented slots are first symmetrically etched into the circular patch resonator to move the TM01-like mode to a lower frequency. Together with the TM21-like mode, these two modes make up the second passband of the proposed filter. A pair of radial-oriented slots is then etched into the edge of the circular patch to split a pair of TM11-like degenerate modes, which forms the first dual-mode passband. Two high-impedance transmission lines are connected to the proposed resonator at a 90° angle to properly excite the four resonant modes described above. Finally, a filter with input/output cross coupling is designed, fabricated and tested to demonstrate the dual-mode dual-band filtering performance, which exhibits a sharp out-of-band rejection skirt and good rejection between the dual passbands. View full abstract»

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  • HTS Bandstop Filter for Radio Astronomy

    Page(s): 236 - 238
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (649 KB) |  | HTML iconHTML  

    A novel miniaturized six-pole high temperature superconducting microstrip bandstop filter operating at S band is presented in this letter. A pseudo elliptical behavior in the frequency characteristic is introduced by designing the resonators to resonate at asynchronous frequencies and by varying the inter resonator phase difference. These filters have been installed in a cryogenic radio astronomy receiver with excellent results. Because of their sharp cut-off characteristics, the filters reduce satellite downlink interference signals by more than 40 dB while minimizing lost observing bandwidth. View full abstract»

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  • Temperature Stable Bulk Acoustic Wave Filters Enabling Integration of a Mobile Television Function in UMTS System

    Page(s): 239 - 241
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (228 KB) |  | HTML iconHTML  

    Multi-mode mobile equipment requires efficient radio-frequency (RF) filtering solutions to solve interference problems in an UMTS system integrated with a mobile television function. A RF filtering solution comprising a band-pass filter and a band-stop filter based on temperature-stable bulk acoustic wave resonator (BAW) technology is proposed in this letter. Both filters measurably demonstrate low insertion loss (~3 dB), high rejections (35-40 dB), and fast roll-off (~10 MHz from pass band to stop band). A temperature coefficient of frequency (TCF) as low as -4 ppm/°C in the filters is achieved, which is five times lower than that of a conventional BAW filter. The low TCF is of critical importance, particularly in the sharp skirts, because trivial frequency changes associated with temperature variation could lead to failure against filter specifications at the skirt corners. The proposed filtering solution can be applied to minimize interference present in similar systems, such as mobile phones integrated with satellite radio or GPS navigation. View full abstract»

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  • New S-Band Bandpass Filter (BPF) With Wideband Passband for Wireless Communication Systems

    Page(s): 242 - 244
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (414 KB) |  | HTML iconHTML  

    In this letter, a new wideband bandpass filter (BPF) using microstrip parallel-coupled line structure for s-band applications is proposed. The filter is constructed of two sections of three coupled lines separated by a nonuniform line resonator. In order to introduce one transmission zero at each edge of the desired passband, one of the outer coupled lines of each section is shorted to the ground. The nonuniform resonator is constructed by attaching pair of capacitive open-ended stubs at its central location. This resonator is implemented to increase the filter degree by moving the resonant mode inside the desired passband. The transmission zeros can be located at any desired frequency and the desired bandwidth can be obtained where the bandwidth is reversely proportional to the gap between the coupled lines. The filter is designed to have a wideband passband to cover the whole s-band frequency range. The design is successfully realized and verified by full-wave electromagnetic simulation and the experiment. Excellent agreement between the expected and measured results is obtained. View full abstract»

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  • Compact Filter Configurations Using Concentric Microstrip Open-Loop Resonators

    Page(s): 245 - 247
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (400 KB) |  | HTML iconHTML  

    This paper presents two highly compact filter configurations using concentric open-loop resonators. A description of each filter configuration is presented, where a linkage between structural features and coupling coefficients is outlined. A third order trisection and a fourth order source-load coupled filter were designed and fabricated at 1.0 GHz, and each filter was shown to occupy an area of just 18 by 18 mm. The measured insertion loss of the third and fourth order filters was 0.83 and 1.20 dB, respectively. Moreover, these structures may also be cascaded to produce higher order compact filters. View full abstract»

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  • Dual-Band Composite Right/Left-Handed Metamaterial Concept

    Page(s): 248 - 250
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (434 KB) |  | HTML iconHTML  

    In this letter a concept of a simple dual-band (DB) composite right/left-handed (CRLH) metamaterial is presented and discussed. This DB-CRLH concept is based on the combination of a conventional CRLH unit-cell with two conventional right-handed transmission-line sections. The equations required for analysis of such structure is derived and presented. The effect of the equivalent circuit model parameters on the dispersion diagram of the DB-CRLH unit-cell is investigated. View full abstract»

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  • A Vertical Transition Between Rectangular Waveguide and Coupled Microstrip Lines

    Page(s): 251 - 253
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (559 KB) |  | HTML iconHTML  

    In this letter, a novel transition between a rectangular waveguide and coupled microstrip lines is presented. A differential microstrip patch antenna (DMPA) inside the waveguide acts as a radiation element. The antenna is composed of the main patch, the short-end parasitic patch, and the matching network. By implementing the short-end parasitic patch, the bandwidth of differential mode signals is greatly increased, while transmission of common mode signals is strongly suppressed. Back-to-back arrangements of such a transition were fabricated and measured. The results show that the 10 dB return loss bandwidth reaches 14.5 GHz, and the insertion loss at the center frequency (96 GHz) is 0.5 dB. Such a transition is suitable for numerous millimeter-wave applications. View full abstract»

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  • A Compact Wideband Microstrip Crossover

    Page(s): 254 - 256
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (652 KB) |  | HTML iconHTML  

    In this letter, a planar microstrip crossover junction is presented. The conductor-backed coplanar waveguide (CB-CPW) structure with vias is employed as the core part of the crossover design. The dimensions of the CB-CPW crossover itself are 11.3 × 11.3 mm2. Two kinds of the transitions between the microstrip line (MSL) and the CB-CPW structure are merged into a double side print circuit board. This presented crossover junction has a bandwidth from 10 up to 6000 MHz for 20 dB return loss, 1 dB insertion loss and -20 dB isolation. Compared with the other designs, this planar crossover features wide bandwidth and compact configuration. View full abstract»

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  • A Novel Formulation for High Efficiency Modes in Push-Pull Power Amplifiers Using Transmission Line Baluns

    Page(s): 257 - 259
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    Push-pull power amplifiers (PAs) operating at HF through to GHz frequencies typically employ a transmission line balun structure. This letter demonstrates that their performance characteristics in high efficiency PA applications are critically different from conventional transformers. For the first time, the effect of the even-mode open-circuit termination on the output waveforms is measured. A novel mathematical formulation is proposed to describe the time-domain waveforms by defining the harmonic impedance environment in terms of odd and even mode excitation rather than tuned harmonics. Experimental verification using harmonic load-pull measurements showed good agreement with the theoretical waveforms generated from factorized waveform expressions. View full abstract»

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  • A 209–233 GHz Frequency Source in 90 nm CMOS Technology

    Page(s): 260 - 262
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (396 KB) |  | HTML iconHTML  

    This letter presents a J-band signal source based on a third harmonic generation of a differential Colpitts voltage controlled oscillator (VCO). The source covers a frequency range from 209.3 to 233.3 GHz, which corresponds to a 10.8% total tuning range. This is the widest tuning range in a J-band source signal reported to date. The VCO was fabricated using a 90 nm Mixed-Mode/RF CMOS process; it provides - 6.2 Bm output power at 228 GHz, while consuming 48 mA from a 1.8 V supply, and an estimated phase noise of - 90.5 dBc/Hz at 1 MHz offset from the carrier. View full abstract»

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  • A D-Band Passive Imager in 65 nm CMOS

    Page(s): 263 - 265
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    A differential D-band (140 GHz) passive imager has been demonstrated in a 65 nm CMOS technology. It achieves a minimum noise equivalent power of 26 fW/√Hz with peak responsivity of 1.2 MV/W. The core circuit consumes chip area of 950×240 μm2 with dc power consumption of 152 mW. This work further pushes imagers in CMOS technology working towards higher millimeter wave/sub millimeter wave frequencies. View full abstract»

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  • Millimeter-Wave Chip-to-Chip Transmission Using an Insulated Image Guide Excited by an On-Chip Dipole Antenna at 90 GHz

    Page(s): 266 - 268
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    A millimeter-wave chip-to-chip transmission link operating at 90 GHz is presented. It uses an insulated image guide and on-chip dipole antennas positioned in the entrance of the waveguide for excitation and reception. The on-chip dipole antenna couples to the higher-order Ex11 mode of a synthesized insulated image waveguide. This field coupling avoids the need for conductive connections such as wire-bonds or flip-chip technology. The measured insertion loss of such a field-coupled dipole-to-image guide transition is 0.46 dB at 90 GHz. View full abstract»

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  • A 0.2–2.6 GHz Wideband Noise-Reduction Gm-Boosted LNA

    Page(s): 269 - 271
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (514 KB) |  | HTML iconHTML  

    This letter presents a wideband low-noise amplifier (LNA) which utilizes gm-boosted and noise-reduction techniques. The proposed DC-coupled 2-stage LNA employs an error amplifier to cancel the DC-offset voltage between the differential DC-coupled paths. The LNA is implemented in 90-nm digital CMOS technology. Within 0.2-2.6 GHz wideband applications, the LNA achieves 24 dB voltage gain, 1.9-2.9 dB NF, - 3 dBm IIP3. The core power of the LNA draws 9 mA from 1V supply voltage and occupies 0.046 mm2. View full abstract»

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  • A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology

    Page(s): 272 - 274
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (798 KB) |  | HTML iconHTML  

    A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range. View full abstract»

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  • IEEE Xplore Digital Library

    Page(s): 275
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  • Advertisement - Quality without compromise

    Page(s): 276
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  • IEEE Microwave and Wireless Components Letters Reviewers List

    Page(s): C3
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Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope