Issue 5 • Date May 2012
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Table of Contents
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IEEE Electron Device Letters publication information
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Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
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Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE


